R5540K

R5540K NISSHINBO | Alldatasheet

Document overview

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Technical content

No. EA-268-210705 Rev.1.3 1 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA . By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state are realized in these ICs. The gate voltage of the N-channel transistor is supplied from the internal step-up circuit. The R5540 is an ideal switch to supply the power from the secondary power source such as the output of a s tep- down DC/DC to the load circuit. Since the package for the R5540 is the ultra small-sized DFN(PL)1010-4F, high density mounting on board is possible.

FEATURES

• Built-in an N-channel MOSFET
• Built-in Soft-start function APPLICATION
• For secondary power source for electrical appliances such as mobile communication equipments, cameras, VCRs and Camcorders.

Rev.1.3 2 BLOCK DIAGRAMS VIN VOUT GNDCE Current Limit Gate Control Soft Start VIN VOUT GNDCE Current Limit Gate Control Soft Start VIN VOUT GNDCE Current Limit Gate Control Soft Start R5540KxxxB R5540KxxxC R5540KxxxD

.1.3 3 SELECTION GUIDE The output current value, the auto-discharge function and the polarity of CE pin from "L" active, "H" active are selectable at the user’s request. Product Name Package Quantity per Reel Pb Free Halogen Free R5540Kxxx∗-TR DFN(PL)1010-4F 10,0 00pcs Yes Yes xxx: The output current value can be designated by the following codes. 002: Output Current (200mA) 004: Output Current (450mA) ∗: Au to-discharge function at off state and the polarity of CE pin are option as follows. B: "H" active, without auto-discharge function at off state C: "L" active, with auto-discharge function at off state D: "H" active, with auto-discharge function at off state PIN CONFIGULATIONS

• DFN(PL)1010-4F Top View 2 1 3 4 Bottom View 3 4 1 2

.1.3 4 PIN DESCRIPTION

• R5540K：DFN(PL)1010-4F Pin No Symbol Pin Description

1 GND Ground Pin

2 CE / CE Chip Enable Pin (“L” Active / “H” Active)

3 VIN Input Pin

4 VOUT Output Pin

VIN Input Voltage -0.3 to 5.0 V VCE Input Voltage ( CE / CE Pin) -0.3 to 5.0 V VOUT Output Voltage -0.3 to 5.0 V IOUT Output Current Internally limited mA PD Power Dissipation (Standard Test Land Pattern)* 300 mW Ta Ambient Tmeprature -40 to 85 °C Tstg Storage Temerature -55 to 125 °C *) For Power Dissipation, please refer to Power Dissipation to be described. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

Rev.1.3 5

ELECTRICAL CHARACTERISTICS

The specification in surrounded by is guaranteed by design at all temperature range, -40°C < = Ta < = 85°C. R5540Kxxxx (Ta=25°C) Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage Code 002 0.75 3.60 V Code 004 0.80 3.60 RON Switch ON Resistance Code 002 VIN=1.2V, IOUT=200mA 120 180 mΩ Code 004 VIN=1.2V, IOUT=450mA IOUT Output Current Code 002 200 mA IOUT Output Current Code 004 450 ISS Supply Current IOUT=0mA *Note1 9 40 µA Istandby Standby Current VOUT=GND VIN=1.8V *Note2 Ta=25°C 0.1 µA Ta=85°C 5 ILIM Current Limit Code 002 VIN=1.2V 200 350 500 mA ILIM Current Limit Code 004 450 700 1000 ISC Short Current Limit VIN=1.2V, VOUT=0V 50 100 mA ICE CE Input Current C version 0.4 µA ICEPD CE Pull-down Current B, D version 0.7 µA VCEH CE Input Voltage “H” VIN=2.5V to 3.6V 1.0 V VIN=1.0V to 2.5V 0.9 VIN=0.75V to 1.0V VIN x 0.9 VCEL CE Input Voltage “L” VIN=0.75V to 3.6V 0.4 V RLOW Auto-discharge Nch Tr. ON Resistance (Version. C, D) VIN=1.2V *Note2 100 Ω tr Output Rise Time VIN=1.2V, VOUT=10% ~ 90% COUT=0.1μF 73 µs tSC Short Current Response Time VOUT=0V 30 µs All test categories were tested on the units under the pulse load condition (Tj ≈Ta=25ºC) except Short Current Response Time. *Note1 CE =L for "L" active, CE=H for "H" active *Note2 CE =H for "L" active, CE=L for "H" active

Rev.1.3 6 TYPICAL APPLICATION Basically, the R5540K series do not require a bypass capacitor between VIN and GND, however, considering the spike noise caused by the high side inductor at current limit, use 0.1uF or more capacitor as a bypass capacitor. More capacitance is also acceptable depending on the application. V BATT DC/DC Converter R5540K V IN V OUT GND CE C IN =1µF C OUT R L Enable Signal Load

Rev.1.3 7 TYPICAL CHARACTERISTIC 1) Output Voltage vs. Output Current CIN=1uF, COUT=1uF 2) Turn on waveform (002x, VIN=1. 2V, CIN=1uF, Ta=25°C) 0.2 0.4 0.6 0.8 1.2 1.6 1.8 IOUT [A] VOUT [V] VCE (1V/div) VOUT (0.2V/div) VCE (1V/div) VOUT (0.2V/div) VIN=1.8[V] VIN=1.2[V] VIN=0.8[V] 0.2 0.4 0.6 0.8 1.2 1.6 1.8 IOUT[A] VOUT[V] VIN=1.8[V] VIN=1.2[V] VIN=0.8[V] R5540K002x R5540K004x OUT (10mA/div) IOUT (20mA/div) TIME(50μs/div) TIME(100μs/div) RL=10[Ω] COUT=0.1[μF] RL=500[Ω] COUT=0.1[μF]

Rev.1.3 8 RL=10[Ω] COUT=1[μF] VCE (1V/div) VOUT (0.2V/div) VCE (1V/div) VOUT (0.2V/div) RL=10[Ω] COUT=10[μF] VCE (1V/div) VOUT (0.2V/div) VCE (1V/div) VOUT (0.2V/div) RL=10[Ω] COUT=100[μF] VCE (1V/div) VOUT (0.2V/div) RL=500[Ω] COUT=10[μF] VCE (1V/div) VOUT (0.2V/div) IOUT (20mA/div) IOUT (10mA/div) IOUT (20mA/div) IOUT (20mA/div) IOUT (50mA/div) IOUT (50mA/div) TIME(50μs/div) TIME(500μs/div) TIME(100μs/div) TIME(100μs/div) TIME(100μs/div) RL=500[Ω] COUT=1[μF] TIME(500μs/div) RL=500[Ω] COUT=10[μF]

Rev.1.3 9 3) Inrush current vs. output capacitor (002x) 4) Input voltage vs. Turn -on speed 5) Supply current vs. Temperature 6) Standby current vs. Input voltage 7) Standby Current vs. Temperature 8) Standby current vs. Input voltage Tr vs VIN 100 120 140 160 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage [V] Tr [μs] Supply Current 1 (Active) -50 -25 0 25 50 75 100 Topt [°C] ISS [μA] VIN=0.8V VIN=1.8V VIN=3.6V Supply Current vs Input Voltage Input Voltage [V] ISS [μA] -40°C 25°C 85°C Standby Current 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 Topt [°C] ISTSNDBY [μA] VIN=0.8V VIN=1.8V VIN=3.6V Standby Current vs Input Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Input Voltage [V] ISTSNDBY [μA] -40°C 25°C 85°C VCE (1V/div) VOUT (0.2V/div) COUT =4.7[μF] COUT =10[μF] COUT =22[μF] COUT =4.7[μF] COUT =10[μF] COUT =22[μF] RL=10Ω tr vs VIN tr [μs] IOUT (40mA/div) TIME(100us/div) Ta=25[℃]

Rev.1.3 10 9) CE Input voltage "H" vs. Temperature 10) CE Input voltage "H" vs. VDD 11) CE Input voltage "L" vs. Temperature 12) CE Input voltage "L" vs. VDD 13) Short current limit vs. Temperature 14) Short current limit vs. Input voltage 15) Switch on resistance vs. Temperature 16) Switch on resistance vs. Input voltage CE Input Voltage "H" 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 Topt [°C] VCEH [V] 0.8V 1.8V 3.6V VCEH vs VIN 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage [V] VCEH [V] -40°C 25°C 85°C Short Current Limit -50 -25 0 25 50 75 100 Topt [°C] ISC [mA] VIN=0.8V VIN=1.8V VIN=3.6V ISC vs VIN Input Voltage [V] ISC [mA] -40°C 25°C 85°C Switch On Resistance 100 120 140 160 180 200 -50 -25 0 25 50 75 100 Topt [°C] RON [mΩ] VIN=0.8V VIN=1.8V VIN=3.6V RON vs VIN 100 120 140 160 180 200 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage [V] RON [mΩ] -40°C 25°C 85°C CE Input Voltage "L" 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 Topt [°C] VCEL [V] 0.8V 1.8V 3.6V VCEL vs VIN 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage [V] VCEL [V] -40°C 25°C 85°C

Rev.1.3 11 17) Output Rise time vs. Temperature 18) Output Rise time vs. Input voltage 19) Output Fall time vs. Temperature 20) Output Fall time vs. Input voltage 21) Reverse leakage current vs. Temperature 22) Reverse leakage current vs. Input voltage Output Turn On Delay 100 125 150 -50 -25 0 25 50 75 100 Topt [°C] tr [μs] VIN=0.8V VIN=1.8V VIN=3.6V tr vs VIN 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage [V] tr [μs] -40°C 25°C 85°C Output Turn Off Delay -50 -25 0 25 50 75 100 Topt [°C] tf [μs] VIN=0.8V VIN=1.8V VIN=3.6V tf vs VIN 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage [V] tf [μs] -40°C 25°C 85°C Reverse Leakage Current 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 Topt [°C] IREV [μA] VIN=0.8V VIN=1.8V VIN=3.6V IREV vs VIN 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Input Voltage [V] IREV [μA] -40°C 25°C 85°C COUT =0.1[μF] COUT =0.1[μF] COUT =0.1[μF] COUT =0.1[μF]

Rev.1.3 12 23) Discharge resistance vs. Temperature 24) Discharge resistance vs. Input voltage 25) Current limit vs. Temperature (002x) 26) Current limit vs. Input voltage (002x) TIMING CHART 10％ V EN VOUT 90％ 50％ Turn-off delay time t OFF fall time tf Discharge Resistance 100 150 200 250 300 350 -50 -25 0 25 50 75 100 Topt [℃] RLOW [Ω] VIN=0.8V VIN=1.2V VIN=3.6V RLOW vs VIN 100 150 200 250 300 350 Input Voltage [V] RLOW [Ω] -40℃ 25℃ 85℃ Current Limit Threshold 100 150 200 250 300 350 400 -50 -25 0 25 50 75 100 Topt [℃] ITH [mA] VIN=0.8V VIN=1.8V VIN=3.6V RLOW vs VIN 200 225 250 275 300 325 350 375 400 0 1 2 3 4 Input Voltage [V] ITH [mA] -40℃ 25℃ 85℃ 10 ％ V EN VOUT 90％ 50 % Turn-on delay time ｔ ON Rise Time t r

Rev.1.3 13 Turn-on/ turn-off waveform (VIN = 1.2[V]) VOUT (0.5V/div) 10Ω tON tr 140.6[μs] 10Ω tOFF 35.82[μs] VOUT (0.5V/div) VOUT (0.5V/div) No Load tr 124.3[μs] No Load tON 45.03[μs] tf 7.13[μs] VOUT (0.5V/div) TIME(10μs/div) 256.9[μs] VCE (0.5V/div) VCE (0.5V/div) VCE (0.5V/div) VCE (0.5V/div) TIME(100μs/div) TIME(10μs/div) tON 124.6[μs] TIME(50μs/div) tf 5.19[μs]

.1.3 14 POWER DISSIPATION (DFN(PL)1010-4F) Pow er Dissipation (PD) depends on conditions of mounting on board. This specification is based on the measurement at the condition below: Measur ement Conditions St andard Land Pattern Environment Mounting on Board (Wind velocity=0m/s) Board Material Glass cloth epoxy plastic (Double sided) Board Dimensions 40mm×40mm×1.6mm Copper Ratio Top side: Approx. 50%, Back side: Approx. 50% Through-holes φ 0.54mm×24pcs Measur ement Result (Ta=25°C, Tjmax=125°C) St andard Land Pattern Power Dissipation 300mW Thermal Resistance θja=(125-25°C)/0.3W=330 °C/W θjc=48 °C/W Power Dissipation 500 400 300 200 100 Power Dissipation PD (mW) 0 25 50 75 85 100 125 150 Ambient Temperature (°C) On Board Measurement Board Pattern IC Mount Area (Unit : mm)

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