R5527K

R5527K NISSHINBO | Alldatasheet

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Technical content

NO. EA-312-240326 OUTLINE The R5527K is an N-channel load switch IC with low supply current, Typ. 40µA. R5527K realizes low on- resistance by using Nch transistor for the driver. In addition, R5527K001x has a reverse current blocking function at on/off state, and R5527K002x has a reverse current blocking function at off state. The R5527K is an ideal load switch IC to supply power from the battery to the load circuit. The R5527K is available in an ultra- small DFN (PL)1612-4D package which can achieve high-density mounting on boards.

FEATURES

46mΩ (V IN=4.5V) 45mΩ (VIN=3.8V) 68mΩ (VIN=1.8V)

• 3A Maximum Continuous Current Capability Max.2µA (R5527K001A/C) At Off-State (R5527K002x) APPLICATION
• Smart Phones, Tablet PCs
• Storage, Portable Devices

NO. EA-312-240326 BLOCK DIAGRAMS R5527K001B R5527K001A R5527K001C R5527K001D RCB Soft Start Charge Pump V IN V OUT GND ON RCB Soft Start Charge Pump V IN V OUT GND ON RCB Soft Start Charge Pump V IN V OUT GND ON R5527K002B R5527K002D RCB Soft Start Charge Pump V IN V OUT GND ON RCB Soft Start Charge Pump V IN V OUT GND ON RCB Soft Start Charge Pump V IN V OUT GND ON

NO. EA-312-240326 PIN DESCRIPTION

• DFN(PL)1612-4D Top View Bottom View Pin No Symbol Pin Description

1 VIN Supply Input Pin

2 GND Ground Pin

3 ON ON/OFF Control Pin, Active High/Low

4 VOUT Switch Output Pin

*1 The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate level). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left floating. SELECTION GUIDE The ON pin polarity, the auto-discharge function(1) and the reverse current blocking (RCB) at on state for the ICs are user-selectable options. Product Name Package Quantity per Reel Pb Free Halogen Free R5527K00∗∗-TR DFN(PL)1612-4D 5,000 pcs Yes Yes : Specify a combination of the ON pin polarity, the auto-discharge function and the RCB at on state . ON pin Polarity Auto-discharge RCB at On-State 1A “L” Active No Yes 1B “H” Active No Yes 1C “L” Active Yes Yes 1D “H” Active Yes Yes 2B “H” Active No No 2D “H” Active Yes No (1) Auto-Discharge function quickly lowers the output voltage to 0V by releasing the electrical charge in the external capacitor when the ON signal is switched from the active mode to the standby mode. 1 2 3 4

NO. EA-312-240326 ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit VIN Input Voltage -0.3 to 6.0 V VON Input Voltage (ON Pin) -0.3 to 6.0 V VOUT Output Voltage -0.3 to 6.0 V IOUT Output Current 3.0 A PD Power Dissipation (DFN(PL)1612-4D)*1 JEDEC STD. 51 Test Land Pattern 830 mW Ta Ambient Tmeprature -40 to 85 °C Tstg Storage Temerature -55 to 125 °C *1 Refer to PACKAGE INFORMATION for detailed information. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

NO. EA-312-240326

ELECTRICAL CHARACTERISTICS

VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. R5527K001A (Ta=25°C) Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 1.8 5.5 V IQ(OFF) Off Supply Current VON=VIN,VOUT=OPEN 1 2 µA ISD Shutdown Current VON=VIN, VOUT=GND Ta=25°C 1 2 µA Ta=85°C 1 10 µA IQ Quiescent Current VON=GND, IOUT=0mA 40 70 µA RON On Resistance VIN=5V, IOUT=1A 48 65 mΩ VIN=4.5V, IOUT=1A 46 VIN=3.8V, IOUT=1A 45 60 VIN=3.3V, IOUT=500mA 45 VIN=2.5V, IOUT=500mA 51 VIN=1.8V, IOUT=250mA 68 VIH ON Input Logic High Voltage VIN=1.8V to 5.5V 1.7 V VIL ON Input Logic Low Voltage VIN=1.8V to 5.5V 1.2 V ION ON Input Leakage VON=VIN 1 µA VT_RCB RCB Protection Trip Point VOUT - VIN 45 mV VR_RCB RCB Protection Release Trip Point VIN - VOUT 25 mV RCB Hysteresis 70 mV ISD_OUT VOUT Shutdown Current VON=GND, VOUT=5.5V, VIN=Short to GND 10 µA tDON*1 Turn-On Delay VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 10% 0.5 2.5 ms tR*1 VOUT Rise Time VIN=3.8V, RL=150Ω, CL=100μF Time from VOUT=VIN x 10% to VIN x 90% 1.5 5.0 ms tON*1 Turn-On Time VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 90% 2.0 7.5 ms All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis. *1 Rise time from VOUT=0V is defined. Refer to the TIMING CHART for detailed information.

NO. EA-312-240326 VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. R5527K001B (Ta=25°C) Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 1.8 5.5 V IQ(OFF) Off Supply Current VON=GND,VOUT=OPEN 0.5 1 µA ISD Shutdown Current VON=GND, VOUT=GND Ta=25°C 0.5 1 µA Ta=85°C 0.5 10 µA IQ Quiescent Current VON=VIN, IOUT=0mA 40 70 µA RON On Resistance VIN=5V, IOUT=1A 48 65 mΩ VIN=4.5V, IOUT=1A 46 VIN=3.8V, IOUT=1A 45 60 VIN=3.3V, IOUT=500mA 45 VIN=2.5V, IOUT=500mA 51 VIN=1.8V, IOUT=250mA 68 VIH ON Input Logic High Voltage VIN=1.8V to 5.5V 1.7 V VIL ON Input Logic Low Voltage VIN=1.8V to 5.5V 1.2 V ION ON Input Leakage VON=GND 1 µA RON_PD Pull-Down Resistance at ON Pin VIN=VON=1.8V to 5.5V 3 MΩ VT_RCB RCB Protection Trip Point VOUT - VIN 45 mV VR_RCB RCB Protection Release Trip Point VIN - VOUT 25 mV RCB Hysteresis 70 mV ISD_OUT VOUT Shutdown Current VON=GND, VOUT=5.5V, VIN=Short to GND 10 µA tDON*1 Turn-On Delay VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 10% 0.5 2.5 ms tR*1 VOUT Rise Time VIN=3.8V, RL=150Ω, CL=100μF Time from VOUT=VIN x 10% to VIN x 90% 1.5 5.0 ms tON*1 Turn-On Time VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 90% 2.0 7.5 ms All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis. *1 Rise time from VOUT=0V is defined. Refer to the TIMING CHART for detailed information.

NO. EA-312-240326 VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. R5527K001C (Ta=25°C) Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 1.8 5.5 V ISD Shutdown Current VON=VIN, VOUT=GND Ta=25°C 1 2 µA Ta=85°C 1 10 µA IQ Quiescent Current VON=GND, IOUT=0mA 40 70 µA RON On Resistance VIN=5V, IOUT=1A 48 65 mΩ VIN=4.5V, IOUT=1A 46 VIN=3.8V, IOUT=1A 45 60 VIN=3.3V, IOUT=500mA 45 VIN=2.5V, IOUT=500mA 51 VIN=1.8V, IOUT=250mA 68 VIH ON Input Logic High Voltage VIN=1.8V to 5.5V 1.7 V VIL ON Input Logic Low Voltage VIN=1.8V to 5.5V 1.2 V ION ON Input Leakage VON=VIN 1 µA VT_RCB RCB Protection Trip Point VOUT - VIN 45 mV VR_RCB RCB Protection Release Trip Point VIN - VOUT 25 mV RCB Hysteresis 70 mV ISD_OUT VOUT Shutdown Current VON=GND, VOUT=5.5V, VIN=Short to GND 10 µA tDON*1 Turn-On Delay VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 10% 0.5 2.5 ms tR*1 VOUT Rise Time VIN=3.8V, RL=150Ω, CL=100μF Time from VOUT=VIN x 10% to VIN x 90% 1.5 5.0 ms tON*1 Turn-On Time VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 90% 2.0 7.5 ms RLOW Nch. On Resistance for Auto-Discharge VIN=VON=5.0V, VOUT=0.1V 20 Ω All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis. *1 Refer to the TIMING CHART for detailed information.

NO. EA-312-240326 VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. R5527K001D (Ta=25°C) Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 1.8 5.5 V ISD Shutdown Current VON=GND, VOUT=GND Ta=25°C 0.5 1 µA Ta=85°C 0.5 10 µA IQ Quiescent Current VON=VIN, IOUT=0mA 40 70 µA RON On Resistance VIN=5V, IOUT=1A 48 65 mΩ VIN=4.5V, IOUT=1A 46 VIN=3.8V, IOUT=1A 45 60 VIN=3.3V, IOUT=500mA 45 VIN=2.5V, IOUT=500mA 51 VIN=1.8V, IOUT=250mA 68 VIH ON Input Logic High Voltage VIN=1.8V to 5.5V 1.7 V VIL ON Input Logic Low Voltage VIN=1.8V to 5.5V 1.2 V ION ON Input Leakage VON=GND 1 µA RON_PD Pull-Down Resistance at ON Pin VIN=VON=1.8V to 5.5V 3 MΩ VT_RCB RCB Protection Trip Point VOUT - VIN 45 mV VR_RCB RCB Protection Release Trip Point VIN - VOUT 25 mV RCB Hysteresis 70 mV ISD_OUT VOUT Shutdown Current VON=GND, VOUT=5.5V, VIN=Short to GND 10 µA tDON*1 Turn-On Delay VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 10% 0.5 2.5 ms tR*1 VOUT Rise Time VIN=3.8V, RL=150Ω, CL=100μF Time from VOUT=VIN x 10% to VIN x 90% 1.5 5.0 ms tON*1 Turn-On Time VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 90% 2.0 7.5 ms RLOW Nch. On Resistance for Auto-Discharge VIN=5.0V, VON=GND, VOUT=0.1V 20 Ω All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis. *1 Refer to the TIMING CHART for detailed information.

NO. EA-312-240326 VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. R5527K002B (Ta=25°C) Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 1.8 5.5 V IQ(OFF) Off Supply Current VON=GND,VOUT=OPEN 0.5 1 µA ISD Shutdown Current VON=GND, VOUT=GND Ta=25°C 0.5 1 µA Ta=85°C 0.5 10 µA IQ Quiescent Current VON=VIN, IOUT=0mA 40 70 µA RON On Resistance VIN=5V, IOUT=1A 48 65 mΩ VIN=4.5V, IOUT=1A 46 VIN=3.8V, IOUT=1A 45 60 VIN=3.3V, IOUT=500mA 45 VIN=2.5V, IOUT=500mA 51 VIN=1.8V, IOUT=250mA 68 VIH ON Input Logic High Voltage VIN=1.8V to 5.5V 1.7 V VIL ON Input Logic Low Voltage VIN=1.8V to 5.5V 1.2 V ION ON Input Leakage VON=GND 1 µA RON_PD Pull-Down Resistance at ON Pin VIN=VON=1.8V to 5.5V 3 MΩ IREV(OFF) Reverse Current at Off-State VON=GND, VOUT=5.5V, VIN=1.8 V 10 µA tDON*1 Turn-On Delay VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 10% 0.5 2.5 ms tR*1 VOUT Rise Time VIN=3.8V, RL=150Ω, CL=100μF Time from VOUT=VIN x 10% to VIN x 90% 1.5 5.0 ms tON*1 Turn-On Time VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 90% 2.0 7.5 ms All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis. *1 Rise time from VOUT=0V is defined. Refer to the TIMING CHART for detailed information.

NO. EA-312-240326 VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. R5527K002D (Ta=25°C) Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 1.8 5.5 V ISD Shutdown Current VON=GND, VOUT=GND Ta=25°C 0.5 1 µA Ta=85°C 0.5 10 µA IQ Quiescent Current VON=VIN, IOUT=0mA 40 70 µA RON On Resistance VIN=5V, IOUT=1A 48 65 mΩ VIN=4.5V, IOUT=1A 46 VIN=3.8V, IOUT=1A 45 60 VIN=3.3V, IOUT=500mA 45 VIN=2.5V, IOUT=500mA 51 VIN=1.8V, IOUT=250mA 68 VIH ON Input Logic High Voltage VIN=1.8V to 5.5V 1.7 V VIL ON Input Logic Low Voltage VIN=1.8V to 5.5V 1.2 V ION ON Input Leakage VON=GND 1 µA RON_PD Pull-Down Resistance at ON Pin VIN=VON=1.8V to 5.5V 3 MΩ tDON*1 Turn-On Delay VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 10% 0.5 2.5 ms tR*1 VOUT Rise Time VIN=3.8V, RL=150Ω, CL=100μF Time from VOUT=VIN x 10% to VIN x 90% 1.5 5.0 ms tON*1 Turn-On Time VIN=3.8V, RL=150Ω, CL=100μF VOUT=VIN x 90% 2.0 7.5 ms RLOW Nch. On Resistance for Auto-Discharge VIN=5.0V, VON=GND, VOUT=0.1V 20 Ω All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis. *1 Refer to the TIMING CHART for detailed information

NO. EA-312-240326 TYPICAL APPLICATION R5527K Typical Application TIMING CHART VOUT Timing Chart (R5527K00xB/D) VOUT Timing Chart (R5527K001A/C) tDON tR tON 50% 10% 90% ON VOUT tDON tR tON 50% 10% 90% ON VOUT R5527K V IN V OUT GND ON CIN V BATT COUT C L R L Load Device Enable Signal

NO. EA-312-240326 TECHNICAL NOTES  Basically, the R5527K does not require a bypass capacitor between VIN pin and GND, however, considering the spike noise, use 0.1µF or more capacitor (1µF [Ceramic] recommended) as a bypass capacitor. If spikes may occur due to the inductance component of the VIN wiring on the board, connect a capacitor with a sufficient capacitance value between VIN pin and GND.  There will be a delay time (Max. 1ms) before R5527K becomes disabled.  When a voltage is remained in the output pin at the restart, the startup time (the time until R5527K is able to fully drive the output load from ON signal input) takes longer than the t ON definition. Refer to the following graph for the maximum value of the startup time. When returning from the reverse current blocking (RCB) trip point, the following startup time is necessary based on the RCB protection release trip point. Re-Start Turn-On Time (Max.)[ms] VIN [V]

NO. EA-312-240326

PACKAGE INFORMATION

Power Dissipation (DFN(PL)1612-4D) PD-DFN(PL)1612-4D-E-B The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 1.6 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.25 mm × 24 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 830 mW Thermal Resistance (θja) θja = 120°C/W Thermal Characterization Parameter (ψjt) ψjt = 71°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 Power Dissipation (mW) Ambient Temperature (°C) 830

NO. EA-312-240326 Package Dimensions (DFN(PL)1612-4D) Mark Specification (DFN(PL)1612-4D) : Product Code … Refer to “R5527K Mark Specification Table”. : Lot Number … Alphanumeric Serial Number Mark Specification R5527K Mark Specification Table (DFN(PL)1612-4D) Product Name  R5527K001B 7A R5527K001C 7B R5527K001D 7C R5527K001A 7D R5527K002B 7E R5527K002D 7F 1.6±0.05 1.2±0.05 A B 0.05 INDEX 0.58

0.05 S S

(0.045) 0.3±0.1 0.25±0.1 0.5 0.86±0.1

0.05 M AB

(Unit : mm) Bottom View 0.5±0.1 C0.1 +0.02 -0.03 ※) Tab is GND level. (They are connected to the reverse side of this IC.) The tab is better to be connected to the GND, but leaving it open is also acceptable.

NO. EA-312-240326 TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 1) On Resistance vs. Input Voltage 2) On Resistance vs. Temperature 3) Off Supply Current vs. Input Voltage 4) Off Supply Current vs. Temperature R5527K00xB/R5527K00xD R5527K00xB/R5527K00xD 1.5 2.5 3.5 4.5 5.5 VIN [V] RON[mΩ] Ta=-40°C Ta=25°C Ta=85°C -50 -25 100 Ta [°C] VIN=1.8V VIN=3.8V VIN=5.5V RON[mΩ] 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.5 3.5 4.5 5.5 Ta=-40°C Ta=25°C Ta=85°C VIN [V] 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 100 VIN=1.8V VIN=3.8V VIN=5.5V Ta [°C] IQ(OFF)[μA] IQ(OFF)[μA]

NO. EA-312-240326 5) ON pin Pull-Down Current vs. Input Voltage 6) ON pin Pull-Down Current vs. Temperature R5527K00xB/R5527K00xD R5527K00xB/R5527K00xD 7) ON pin Logic Threshold vs. Input Voltage 8) ON pin Logic Threshold vs. Input Voltage 0.5 1.5 2.5 1.5 2.5 3.5 4.5 5.5 Ta=-40°C Ta=25°C Ta=85°C VIN [V] ION [μA] 0.5 1.5 2.5 -50 -25 100 VIN=1.8V VIN=3.8V VIN=5.5V Ta [°C] ION [μA] 1.3 1.32 1.34 1.36 1.38 1.4 1.42 1.44 1.46 1.48 1.5 1.5 2.5 3.5 4.5 5.5 "H" Ta=-40°C "H" Ta=25°C "H" Ta=85°C "L" Ta=-40°C "L" Ta=25°C "L" Ta=85°C VIN [V] VON [V] 1.3 1.32 1.34 1.36 1.38 1.4 1.42 1.44 1.46 1.48 1.5 -50 -25 100 "H" VIN=1.8V "H" VIN=3.8V "H" VIN=5.5V "L" VIN=1.8V "L" VIN=3.8V "L" VIN=5.5V Ta [°C] VON [V]

NO. EA-312-240326 9) Quiescent Current vs. Input Voltage 10) Quiescent Current vs. Temperature 11) Off Supply Current vs. Input Voltage 12) Off Supply Current vs. Temperature R5527K001A/R5527K001C R5527K001A/R5527K001C 1.5 2.5 3.5 4.5 5.5 Ta=-40°C Ta=25°C Ta=85°C VIN [V] IQ [μA] -50 -25 100 VIN=1.8V VIN=3.8V VIN=5.5V Ta [°C] IQ [μA] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Ta=-40°C Ta=25°C Ta=85°C VIN [V] IQ(OFF)[μA] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 100 VIN=1.8V VIN=3.8V VIN=5.5V Ta [°C] IQ(OFF)[μA]

NO. EA-312-240326 13) Inrush Current R5527K00xB Ta=25°C RL=150Ω 0μF 10μF 100μF 330μF 470μF VOUT(1V/div) ON(5V/div) I(VIN)(100mA/div) 1ms/div CL= CL= CL= CL= CL= I(VIN)(100mA/div) VOUT(1V/div)

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