R5523N NISSHINBO | Alldatasheet
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Technical content
USB HIGH-SIDE POWER SWITCH NO.EA-168-180516 OUTLINE The R5523N is a high-side MOSFET switch IC for Universal Serial Bus (USB) applications. Low ON Resistance (Typ.130m) and low supply current (Typ.20 A at active mode) are realized in this IC. An over-current limi t circuit, a thermal shutdown circuit, and an under voltage lockout (UVLO) circuit are built-in as protection circuits. Further, a delay circuit for flag signal after detecting over-c urrent, is embedded to prevent miss-operation of error flag because of inrush current. The R5523N Series is ideal for applications of protection for USB power supply. Since the package is small SOT-23-5, high density mounting on board is possible.
FEATURES
Built-in P-channel MOSFET Switch Over- Current Limit / Short Circuit Protection Built-in Under Voltage Lockout (UVLO) Function Built-in Thermal Shutdown Protection Built-in Soft-start Function
APPLICATIONS
USB Peripherals Notebook PCs SELECTION GUIDE The logic of the enable pin for the ICs can be selected at the user’s request. Product Name Package Quantity per Reel Pb Free Halogen Free R5523N001-TR-FE SOT-23-5 3,000 pcs Yes Yes : Designation of the logic of the enable pin. ( A ) " L " a c t i v e ( B ) " H " a c t i v e
NO.EA-168-180516 BLOCK DIAGRAM R5523N Block Diagram PIN DESCRIPTION 123 (mark side) R5523N (SOT-23-5) Pin Configuration Pin No Symbol Pin Description
1 EN Enable Pin
2 GND Ground Pin
3 FLG FLG pin (Open Drain Output)
4 VIN Power Supply Pin
5 VOUT Output Pin
NO.EA-168-180516 ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit VIN Input Voltage 6.5 V VEN Enable Pin Input Voltage 0.3 to VIN+0.3 V VFLG Flag Voltage 0.3 to 6.5 V IFLG Flag Current 14 mA VOUT Output Voltage 0.3 to VIN+0.3 V IOUT Output Current Internal Limited PD Power Dissipation (1) (SOT-23-5, JEDEC STD.51-7) 660 mW Tj Junction Temperature Range 40 to 125 C Tstg Storage Temperature 55 to 125 C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stre ss momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over t hese absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Rating Unit VIN Operating Input Voltage 2.2 to 5.5 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment shou ld be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices can not operate normally over the recommended operating conditions, even if w hen they are used over such cond itions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (2) Refer to POWER DISSIPATION for detailed information.
NO.EA-168-180516
ELECTRICAL CHARACTERISTICS
R5523N001A/B Electrical Characteristics (Ta = 25 C) Symbol Item Conditions Min. Typ. Max. Unit IDD1 Supply Current 1 (Enabled) V OUT = OPEN (1) 20 45 μA IDD2 Supply Current 2 (Disabled) V OUT = OPEN (2) 0.1 1.0 μA RON Switch On Resistance V IN = 5V, IOUT = 500mA 130 180 m ton Output Turn-on Delay VIN = 5V, RL = 60 1400 μs toff Output Turn-off Delay VIN = 5V, RL = 60 5 μ s VUVLO U V L O T h r e s h o l d VIN at increasing 1.6 1.9 V VHYS UVLO Hysteresis Range V IN at decreasing 0.1 V ITH Current Limit Threshold 1.0 1.5 A ILIM Short Current Limit VIN=5V, 5ms after VOUT = 0V(3) 0.5 0.75 1.3 A tFD Over Current Flag Delay VIN = 5V, From Over Current to FLG = "L" 5 10 20 ms TTS Thermal Shutdown Temperature Threshold Tj at increasing 135 C Tj at decreasing 120 C IEN Enable Pin Input Current 0.01 1.0 μA VEN1 Enable Pin Input Voltage 1 V EN at increasing 2.0 V VEN2 Enable Pin Input Voltage 2 V EN at decreasing 0.8 V ILO Output Leakage Current 0.1 1.0 μA VLF Flag "L" Output Voltage I SINK = 1mA 0 . 4 V IFOF Flag Off Current VFLG = 5.5V 0.01 1.0 μA (1) EN=”L”(R5523NxxxA)､EN=”H”(R5523NxxxB) (2) EN=”H”(R5523NxxxA)､EN=”L”(R5523NxxxB) (3) Refer to “Overcurrent Detection and Overcurrent limit” in THEORY OF OPERATION for details.
NO.EA-168-180516 THEORY OF OPERATION This explanation is based on the typical application. There is a parasitic diode between source and drain of the switch transistor. (Refer to the block diagram.) Because of this, in both cases of enable and disable, if the vo ltage of V OUT pin is higher than V IN pin, current flows from VOUT to VIN. In case that V OUT pin and GND is short, if over-current would continue, the temp erature of the IC would increase drastically. If the temperature of the IC is beyond 135°C, the switch transistor turns off and the FLG pin level becomes "L". Then, when the temperature of the IC decreases equal or lower than 120°C, the switch transistor turns on and FLG becomes "H". Unless the abnormal situation of VOUT pin is removed, the switch transistor repeats on and off. Refer to the 24) Ther mal Shutdown operation in the typical characteristics. Over-current level is set internally in the IC. There are three types of response against over-current: Under the condition that VOUT pin is short or large capacity is loaded, if the IC is enabled, the IC becomes constant current state. After the flag delay time passes, FLG becomes "L", that means over current state. Refer to the 23) current limit transient response of typical characteristics. While the switch transistor is on, if VOUT pin is short or large capacity is loaded, until the current limit circuit responds, large transient current flows. After the transient current is beyond the over-current detector threshold and delay time of the flag passes, FLG becomes "L", that means over current state. Refer to the 25), 26) over-current limit transient response of typical characteristics. In the case that load current gradually increases, the IC is not into the constant current state until the current is beyond over current limit. Once the level is beyond the over current detector threshold, load current is limited into over current limit level. Note that load current continuously flows until the load current is beyond the over-current detector threshold. FLG pin is Nch Open drain output. If the over-current or over-temperature is detected, FLG becomes "L". If over-current is detected, FLG becomes "L" after the flag delay time tFD passes. Therefore flag signal is not out with inrush current. UVLO circuit prevents that the switch transistor turns on unti l the input voltage is beyond 1.9V. UVLO circuit can operate when the IC is enabled.
NO.EA-168-180516 Timing Chart R5523N001A R5523N001B Output On time/ Output Off time tON tOFF VEN VOUT tFD VEN VFLG FLG Output Delay Time 50% 10% 50% 50% 90% Output On time/ Output Off time tON tOFF VEN VOUT tFD VEN VFLG FLG Output Delay Time 50% 10% 50% 50% 90% 10% 10%
NO.EA-168-180516 Overcurrent Detection and Overcurrent Limit R5523N001A / R5523N001B Overcurrent Detection and Overcurrent limit Timing Chart (1) When the IOUT is ITH or less, the current is not limited. (2) Once the IOUT reaches to ITH, the IOUT is limited by ILIM. (3) When the I OUT drops to I LIM or less within the t FD time, the current limit is re leased. The current is not limited until the IOUT exceeds ITH again. (4) When the IOUT reaches to ITH and it is limited by ILIM for tFD or more, the switch transistor turns off and VFLG becomes “Low”. <tFD tFD ITH ILIM IOUT (1) (2) (3) (4) VIN VFLG
NO.EA-168-180516 APPLICATION INFORMATION TECHNICAL NOTES Typical Application Circuit VIN OUT EN GND 0.1F R5523N001x VEN FLG 10～100k IN VOUT R5523N001x Typical Application Circuit Precautions for Selecting External Components Bypass capacitor Put a capacitance range from 0.1µF to 1µF bypass capacitor between VIN pin and GND pin of the IC. Without a bypass capacitor, in case of output short, because of the high side inductance of VIN pin, the ringing may be generated and it might be a cause of an unstable operation. Pull-up resistance value range of flag pin Recommended pull-up resistance value range of flag pin is from 10k to 100k. Over-current limit Function In case that VOUT pin and GND is short, if over-current would c ontinue, the temperature of the IC would increase drastically. If the temperature of the IC is equal or more than 135°C (Typ.), the switch transistor turns off because of thermal shutdown protection. In other words, when the temperature of the IC becomes equal or more than 135°C( Typ.), both the over-current limit circuit and thermal shutdown circuit work for the protection of the IC.
NO.EA-168-180516 TYPICAL CHARACTERISTICS Typical Characteristics are intended to be used as reference data, they are not guaranteed. 1) Output Voltage vs. Output Current 2）Supply Current vs. Temperature 3）Supply Current vs. Input Voltage 4）On Resistance vs. Temperature 5）On Resistance vs. Input Voltage 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 200 400 600 800 1000 1200 Output Voltage V OUT[V] Output Current IOUT[mA] - 4 0 - 2 00 2 04 06 08 0 1 0 0 Supply Current I DD1 [uA] Temperature Ta [℃] 2 2.5 3 3.5 4 4.5 5 5.5 Supply Current IDD1 [uA] Input Voltage VIN [V] 100 120 140 160 180 - 4 0 - 2 00 2 04 06 08 0 1 0 0 Switch ON Resistance R ON [mΩ] Temperature Ta [℃] 100 120 140 160 180 22 . 533 . 544 . 555 . 5 Switch ON Resistance R ON [mΩ] Input Voltage VIN [V] VIN=2.2V VIN=5.5V -40°C 25°C 85°C VIN=2.2V VIN=5.5V 25°C -40°C 85°C VIN=2.2V VIN=5.5V
NO.EA-168-180516 6）Output On Time vs. Temperature 7）Output On Time vs. Input Voltage 8）Output Off Time vs. Temperature 9）Output Off Time vs. Input Voltage 10）Overcurrent Threshold vs. Temperature 11）Overcurrent Threshold vs. Input Voltage 200 400 600 800 1000 1200 1400 1600 1800 2000 - 5 0 - 2 50 2 55 07 5 1 0 0 Output On Time ton[us] Temperature Ta[℃] 200 400 600 800 1000 1200 1400 1600 1800 2000 Output ON Time ton[us] Inoput Voltage VIN[V] - 4 0 - 2 00 2 04 06 08 0 1 0 0 Output OFF Time t OFF[us] Temperature Ta [℃] 22 . 533 . 544 . 555 . 5 Output OFF Time tOFF[us] Input Voltage VIN [V] 100 200 300 400 500 600 700 800 900 1000 - 5 0 - 2 50 2 55 07 5 1 0 0 Overchrret Threshold I LIM[mA] Temperature Ta[℃] 500 550 600 650 700 750 800 850 900 950 1000 Overcurrent Threshold I LM[mA] Input Voltage V IN[V] VIN=2.2V VIN=5.5V -40°C 25°C 85°C VIN=5.5V VIN=2.2V 85°C 25°C -40°C VIN=2.2V VIN=5.5 -40°C 25°C 85°C
NO.EA-168-180516 12）Overcurrent Threshold vs. Temperature 13）Overcurrent Threshold vs. Input Voltage 14）Enable Input Voltage vs. Temperature 15）Enable Input Voltage vs. VIN Input Voltage 16）Flag Output Delay Time vs. Temperature 17）Flag Output Delay Time vs. VIN Input Voltage 500 600 700 800 900 1000 1100 1200 1300 1400 1500 - 5 0 - 2 50 2 55 07 5 1 0 0 Overcurrent Threshold I TH[mA] Temperature Ta[℃] 500 600 700 800 900 1000 1100 1200 1300 1400 1500 Overcurrent Threshold I TH[mA] Input Voltage VIN [V] 0.0 0.4 0.8 1.2 1.6 2.0 - 4 0 - 2 00 2 04 06 08 0 1 0 0 EN Threshold V EN1/VEN2 [V] Temperature Ta[℃] VIN=5.0V 0.0 0.4 0.8 1.2 1.6 2.0 22 . 533 . 544 . 555 . 5 EN Threshold VEN1/VEN2 [V] Input Voltage VIN [V] Ta=25℃ - 4 0 - 2 00 2 04 06 08 0 1 0 0 FLG Output Delay Time tFD[ms] Temperature Ta [℃] 22 . 533 . 544 . 555 . 5 FLG Output Delay Time t FD [ms] Input Voltage VIN [V] VIN=2.2V VIN=5.5V -40°C 25°C 85°C VIL VIH VIL VIN=2.2V VIN=5.5V -40°C 25°C 85°C VIH
NO.EA-168-180516 VEN VFLG IOUT CL=470μF CL=220μF CL=100μF CL=10μF 18）UVLO Threshold vs. Temperature 19）UVLO Characteristic at VIN increasing 20）Turn on Response VEN=0V，CL=47μF，RL=35Ω 4ms/div VIN=5V，CL=47μF，RL=35Ω 21）Turn Off Response 22）Inrush Current VIN=5V，CL=47μF，RL=35Ω 2ms/div VIN=5V，RL=35Ω 1.6 1.7 1.8 1.9 2.0 2.1 2.2 - 4 0 - 2 00 2 04 06 08 0 1 0 0 UVLO Threshold V UVLO [V] Temperature Ta[℃] VIN at increasing VIN at decreasing VIN (2V/div) VFLG (2V/div) VOUT (2V/div) IOUT (100mA/div) VEN VFLG VOUT IOUT VEN (10V/div) VFLG (5V/div) VOUT (5V/div) IOUT (200mA/div) VFLG VEN IOUT CL=470μF CL=220μF CL=100μF CL=10μF
NO.EA-168-180516 23）Current Limit Transient Response (Case: Enable to Short) 24）Thermal Shutdown Operation VIN=5V 2ms/div VIN=5V，CL=47μF 100ms/div 25）Current Limit Transient Response (Case: Output short during enable) 26）Zoomed in 25) VIN=5V，CL=47μF 2ms/div VIN=5V，CL=47μF 100us/div VFLG (5V/div) VFLG (5V/div) IOUT (500mA/div) VOUT (5V/div) VEN (5V/div) VFLG (5V/div) IOUT (500mA/div) 13.8ms VOUT (5V/div) IOUT (2A/div) VOUT (5V/div) IOUT (“2A/div)
POWER DISSIPATION SOT-23-5 Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes 0.3 mm × 7 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 660 mW Thermal Resistance (ja) ja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern
PACKAGE DIMENSIONS SOT-23-5 Ver. A i 2.9±0.2 1.9±0.2 (0.95) (0.95) 5 4 1 2 3 1.6-0.1 +0.2 2.8±0.3 0.4±0.1 0.8±0.1 1.1±0.1 0～0.1 0.15-0.05 +0.1 0.2min.
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