R5520H NISSHINBO | Alldatasheet

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Technical content

USB HIGH-SIDE POWER SWITCH NO.EA-091-130827 OUTLINE The R5520H is CMOS-based high-side MOSFET switch IC for Universal Serial Bus (USB) applications. Low ON Resistance (Typ.100mΩ) and low supply current (Typ.20μA at active mode) are realized in this IC. An over-current limit circuit, thermal shutdown circ uit, and an under voltage lockout circuit are built-i n as prote ction circuits. Further, a delay circuit for flag si gnal after detecting over-current, is embedded to prevent miss-operation of error flag because of inrush current. The R5520H is ideal for applications of protection for USB power supply.

FEATURES

  • Built-in P-channel MOSFET Switch
  • Output Current
  • Flag Delay Over- Current Limit / Short Circuit Protection
  • Built-in Under Voltage Lockout (UVLO) Function
  • Built-in Thermal Shutdown Protection
  • Built-in Soft-start Function

APPLICATIONS

  • USB Peripherals
  • Notebook PCs

NO.EA-091-130827 BLOCK DIAGRAMS R5520H001A/B IN EN OUT FLG GATE CONTROL CURRENT LIMIT FLAG DELAY UVLO THERMAL SHUTDOWN GND SELECTION GUIDE The logic of the enable pin for the ICs can be selected at the user’s request. Product Name Package Quantity per Reel Pb Free Halogen Free R5520H001∗-T1-FE SOT-89-5 1,000 pcs Yes Yes ∗ : Designation of the logic of the enable pin. ( A ) " L " a c t i v e ( B ) " H " a c t i v e

NO.EA-091-130827 PIN DESCRIPTIONS

  • SOT-89-5 Pin No Symbol Pin Description

1 EN Enable Pin

2 GND Ground Pin

3 FLG FLG pin (Open Drain Output)

4 IN Power Supply Pin

5 OUT Output Pin

VIN Input Voltage 6.0 V VEN Enable Pin Input Voltage −0.3 to VIN+0.3 V VFLG Flag Voltage −0.3 to 6.0 V IFLG Flag Current 14 mA VOUT Output Voltage −0.3 to VIN+0.3 V IOUT Output Current Internal Limited PD Power Dissipation*1 (SOT-89-5) 900 mW Ta Operating Temperature Range −40 to 85 °C Tstg Storage Temperature Range −55 to 125 °C *1 For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily excee ded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute ma ximum ratings is not assured.

NO.EA-091-130827

ELECTRICAL CHARACTERISTICS

  • R5520H001A/B Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VIN I nput Voltage 4.0 5.5 V IDD1 S upply Current 1 A ctive *1, OUT=open 20 60 μA IDD2 S upply Current 2 O FF *2, OUT=open 0.5 5.0 μA V IN=5V, IOUT=500mA 100 140 mΩ RON S witch On Resistance V IN=4V, IOUT=500mA 110 150 mΩ tON O utput Turn-on Delay R L=10Ω 2 12 ms tOFF O utput Turn-off Delay R L=10Ω 5 20 μs V IN=increasing 2.1 2.4 2.7 V VUVLO U VLO Threshold V IN=decreasing 2.2 V ITH C urrent Limit Threshold R amped Load 1.2 2.0 A ILIM S hort Current Limit V OUT=0V 0.50 0.75 1.00 A tFD Over Current Flag Delay F rom Over Current to FLG="L" 5 10 20 ms T j=increasing 135 TTS Thermal Shutdown T emperature Threshold T j=decreasing 125 IEN E nable Pin Input Current 0.01 1.00 μA VEN1 E nable Pin Input Voltage 1 V EN=increasing 2.4 V VEN2 E nable Pin Input Voltage 2 V EN=decreasing 0.8 V ILO O utput Leakage Current 1 10 μA VLF F lag "L" Output Voltage I SINK=1mA 0.4 V IFOF F lag Off Current V FLAG=5.5V 0.05 2.00 μA *1 EN=L (R5520H001A), EN=H (R5520H001B) *2 EN=H (R5520H001A), EN=L (R5520H001B) RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devic es cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

NO.EA-091-130827 OPERATION This explanation is based on the typical application. ⋅ (1) There is a parasitic diode between source and drain of the switch transistor. (Refer to the block diagram.) Because of this, in both cases of enable and disable, if the voltage of OUT pin is higher than IN pin, current flows from OUT to IN. ⋅ (2) In case that OUT pin and GND is short, if over-cur rent would continue, the te mperature of the IC would increase drastically. If the temperature of the IC is beyond 135°C, the switch transistor turns off and the FLG pin level becomes "L". Then, when the temperature of the IC decreases equal or lower than 125°C, the switch transistor turns on and FLG becomes "H". Unless the abnormal situation of OUT pin is removed, the switch transistor repeats on and off. Refer to the 21) over-current protection operation in the typical characte ristics. ⋅ (3) Over-current level is set internally in the IC. There are three types of response against over-current: cUnder the condition that OUT pin is short or large capacity is loaded, if the IC is enabled, the IC becomes constant current state. After the flag delay time passes, FLG becomes "L", that means over current state. Refer to the 20) current limit transient response of typical characteristics. dWhile the switch transistor is on, if OUT pin is short or large capacity is loaded, until the current limit circuit responds, large tran sie nt current fl ows. After the transient current is beyond the over-current de-tector threshold and delay time of the flag passes, FLG becomes "L", that means over current state. Refer to the 22), 23) over-current limit transient response of typical characteristics. eIn the case that load current gradually increases, the IC is not into the constant current state until the current is beyond over curre nt limit. Once the level is beyond the over current detector threshold, load current is limited into over current limit level. Note that load current continuously flows until the load current is beyond the over-current detector threshold. ⋅ (4) FLG pin is Nch Open drain output. If the over-current or over-temperature is detected, FLG becomes "L". If over-current is detected, FLG becom es "L" after the flag delay time t FD passes. Therefore flag signal is not out with inrush current. ⋅ (5) UVLO circuit prevents that the switch transistor turns on until the input voltage is beyond 2.4V. UVLO circuit can operate when the IC is enabled.

NO.EA-091-130827 TEST CIRCUIT 1 5

2 GND

A VEN 0.1μF 0.1μF IOUT V VON Supply Current Test Circuit S witch On Resistance Test Circuit 1 5 0.1μF VOUT 10Ω 1 5 A VEN 0.1μF IOUT Output On Tim e Test Circuit Over-current Limit Test Circuit 0.1μF IOUT 0.1μF 100kΩ V VOUT Over-current Threshold Test Circuit Enable Input Voltage Te st Circuit

NO.EA-091-130827 1 5 A VEN 0.1μF 0.1μF IOUT V VON Flag Output Delay Time Test Circuit UVLO Threshold Tes t Circuit TYPICAL APPLICATION GND OUTEN FLG IN 0.1μF VOUTVEN VFLG 10k to 100k VIN +4V to +5.5V R5520H R5520H001A/B TECHNICAL NOTES ⋅ Put a capacitance range from 0.1μF to 1μF bypass capacitor between IN pin and GND pin of the IC. Without a bypass capa citor, in case of output short, because of the high side inductance of IN pin, ringing may be generated and it might be a cause of an unstable operation. ⋅ Recommended pull-up resistance value range of flag pin is from 10kΩ to 100kΩ.

NO.EA-091-130827 TIMING CHART

  • R5520H001A 50% 90% 50% 10% tOFF tON VEN VOUT Output On Time/Output Off Time 50% 10% tFD VEN VFLG FLG Output Delay Time
  • R5520H001B 50% 90% 50% 10% tOFF tON VEN VOUT Output On Time/Output Off Time 50% 10% tFD VEN VFLG FLG Output Delay Time

NO.EA-091-130827

PACKAGE INFORMATION

POWER DISSIPATION (SOT-89-5) Power Dissipation (P D) depends on conditions of mounting on boar d. This specification is based on the measurement at the condition below: Measurement Conditions High Wattage Land Pattern Standard Land Pattern Environment Mounting on Board (Wind velocity=0m/s) Mounting on Board (Wind velocity=0m/s) Board Material Glass cloth epoxy plastic (Double sided) Glass cloth epoxy plastic (Double sided) Board Dimensions 30mm × 30mm × 1.6mm 50mm × 50mm × 1.6mm Copper Ratio Top side : Approx. 20% , Back side : Approx. 100% Top side : Approx. 10% , Back side : Approx. 100% Through-hole φ0.85mm × 10pcs - Measurement Result (Ta=25°C, Tjmax=125°C) High Wattage Land Pattern Standard Land Pattern Free Air Power Dissipation 1300mW 900mW 500mW Thermal Resistance 77°C/W 111 °C/W 200 °C/W Power Dissipation PD (mW) 1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 25 5 0 7 5 100 125 15 0 Ambient Temperature (°C) Power Dissipation On Board (High Wattage Land Pattern) On Board (Standard Land Pattern) Free Air 7.5 15 7.5 H i g h W a t t a g e Standard Measurement Board Pattern IC Mount Area (Unit : mm)

NO.EA-091-130827 PACKAGE DIMENSIONS (SOT-89-5) 1.5±0.1 1.5±0.1 0.47±0.1 0.42±0.1 0.42±0.1 1.5±0.1 0.4±0.1 0.4±0.1 0.1 S S 0.3±0.2 0.3±0.2 4 5 3 2 1 Bottom View 0.42±0.1 4.5±0.1 1.6±0.2 4.35±0.1 2.5±0.1 0.4±0.3 5 4 1 2 3 φ1.0 1.00±0.2 Unit : mm MARK SPECIFICATION (SOT-89-5) cde fgh cdef: Product Code … Refer to MARK SPECIFICATION T ABLE (SOT-89-5) gh: Lot Number … Alphanumeric Serial Number MARK SPECIFICATION TABLE (SOT-89-5) Product Name cdef R5520H001A F 0 1 A R5520H001B F 0 1 B

NO.EA-091-130827 TYPICAL CHARACTERISTICS 1) Supply Current vs. Temperature 2) Supply Current vs. Input Voltage Temperature Topt(°C) Supply Current IDD1(μA) -40 0 40 100-20 20 60 80 VIN=4V VIN=5.5V Input Voltage VIN(V) Supply Current IDD1(μA) 2.5 3.5 4.5 63 4 5 5.5 85°C -40°C 25°C 3) On Resistance vs. Temperature 4) On Resistan ce vs. Input Voltage 180 140 Temperature Topt(°C) On Resistance RON(mΩ) -40 0 40 100-20 20 60 80 160 120 100 IOUT=500mA VIN=4V VIN=5V Input Voltage VIN(V) On Resistance RON(mΩ) 180 140 2.5 3.5 4.5 63 4 5 5.5 160 120 100 IOUT=500mA 85°C -40°C 25°C 5) Output On Time vs. Temperature 6) Output On Time vs. Input V oltage 3.5 3.0 1.5 1.0 Temperature Topt(°C) Output On Time tON(ms) -40 0 40 100-20 20 60 80 2.5 2.0 VIN=4V VIN=5.5V 3.5 3.0 1.5 1.0 Input Voltage VIN(V) Output On Time tON(ms) 2.5 3.5 4.5 63 4 5 5.5 2.5 2.0 85°C -40°C 25°C

NO.EA-091-130827 7) Over-current limit vs. Temperature 8) Over-current limit vs. Input V oltage 900 850 550 500 Temperature Topt(°C) Over-Current Limit ILIM(mA) -40 0 40 100-20 20 60 80 750 800 650 700 600 VIN=4V VIN=5.5V 900 850 800 750 700 650 600 550 500 Input Voltage VIN(V) Over-Current Limit ILIM(mA) 2.5 3.5 4.5 63 4 5 5.5 85°C -40°C 25°C 9) Over-current Detector Threshold vs. Temperatur e 10) Over-cu r rent Detector Threshold vs. Input Voltage 1800 1400 200 -40 0 40 100-20 20 60 80 1600 1200 1000 800 600 400 Temperature Topt(°C) Over-current Detector Threshold ITH(mA) VIN=4V VIN=5.5V Input Voltage VIN(V) Over-current Detector Threshold ITH(mA) 1800 1600 800 600 2.5 3.5 4.5 63 4 5 5.5 1400 1200 1000 85°C -40°C 25°C 11) Enable Input Voltage vs. Temperature 12) Enable Input Vo lt age vs. Input Voltage 2.4 2.0 1.2 1.0 Temperature Topt(°C) Enable Input Voltage VEN1/VEN2(V) -40 0 40 100-20 20 60 80 2.2 1.8 1.6 1.4 VIN=5V VEN1 VEN2 Input Voltage VIN(V) Enable Input Voltage VEN1/VEN2(V)2.4 2.0 1.2 1.0 2.5 3.5 4.5 63 4 5 5.5 2.2 1.8 1.6 1.4 Topt=25°C VEN1 VEN2

NO.EA-091-130827 13) Flag Output Delay Time vs. Temperature 14) Flag Output Delay T ime vs. Input Voltage Temperature Topt(°C) Flag Output Delay Time tFD(ms) -40 0 40 100-20 20 60 80 VIN=4V VIN=5.5V Input Voltag VIN(V) Flag Output Delay Time tFD(ms) 2.5 3.5 4.5 63 4 5 5.5 85°C -40°C 25°C 15) UVLO Threshold vs. Temperature 2.7 2.6 2.0 1.9 Temperature Topt(°C) UVLO Detector Threshol VUVLO(V) -40 0 40 100-20 20 60 80 2.4 2.5 2.2 2.3 2.1 VIN decreasing VIN increasing 16) UVLO at V IN increasing Time(5ms/div) VEN=0V, CL=57μF, RL=35Ω VIN (1V/div) VFLG (1V/div) VOUT (2V/div) IOUT (100mA/div)

NO.EA-091-130827 17) Turn-on response 704mA Time(1ms/div) VIN=5V, CL=147μF, RL=35Ω VEN (10V/div) VFLG (5V/div) VOUT (5V/div) IOUT (200mA/div) 18) Turn off Response Time(2ms/div) VIN=5V, CL=147μF, RL=35Ω VEN (10V/div) VFLG (5V/div) VOUT (5V/div) IOUT (200mA/div) 19) Inrush current CL=310μF CL=210μF CL=110μF CL=10μF Time(1ms/div) VIN=5V, RL=35Ω VEN (10V/div) VFLG (5V/div) IOUT (200mA/div)

NO.EA-091-130827 20) Current Limit Transient Response (Case: Enable to Short) 11.6ms(tFD) Time(2ms/div) VIN=5V VEN (10V/div) VFLG (5V/div) IOUT (500mA/div) 21) Thermal Shutdown Time(100ms/div) VIN=5V, CL=47μF VFLG (5V/div) VOUT (5V/div) IOUT (500mA/div) 22) Current Limit Transient Response (Case: Output short during enable) Time(2ms/div) VIN=5V, CL=47μF VFLG (5V/div) VOUT (5V/div) IOUT (5A/div)

NO.EA-091-130827 23) Zoomed in 22) VIN=5V, CL=47μF VOUT (5V/div) IOUT (5A/div) Time(10μs/div)

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