R5494L NISSHINBO | Alldatasheet
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Technical content
1-Cell Li-Ion Battery Protection IC NO.EA-360-191209 OUTLINE The R5494L is a high voltage tolerance CMOS-based protection IC for Over-charge / discharge and Overcurrent of a rechargeable one-cell Lithium-ion (Li+) / Lithium polymer battery. The R5494L can detect Over-charge / discharge of the Li+ one-cell, Excess load current, and Charge-current. And, the R5494L has a short circuit detector for preventing large external short circuit current. The R5494L consists of four voltage detectors, a reference unit, a delay circuit, a short circuit detector, an oscillator, a counter, and logic circuits. As Charge Protection, following a detection of Overcharge or Excess charge-current, the C OUT pin becomes “L” after the internal fixed delay time. The detector is reset, and the C OUT becomes "H" when the cell voltage becomes lower than the overcharge detector threshold after disconnecting the charger from the battery pack. However, simply disconnecting the charger from the battery pack might be not enough to meet the release conditions depending on the characteristics of external components such as MOSFETs. In this situation, loading is required to release the overcharge detection. The COUT becomes “H” when the cell voltage reaches the released voltage from overcharge. As Discharge protection, likewise, following a detection of Overdischarge or Excess discharge-current, the DOUT pin becomes “L” after the internal fixed delay time. The overdischarge detector is released under the following conditions: when the cell voltage becomes equal to the released voltage without the charger being connected, or when it becomes higher than the overdischarge detector threshold with the charger being connected. Even if the battery is discharged to 0V, charge current is acceptable in AP version. However, AG version is 0V batteries unacceptable types. Once the excess discharge-current or shorting is detected, the D OUT becomes “H” when disconnecting the battery pack from the load system. After the detection of overdischarge, the extremely low supply current is able to keep by halting the internal circuits' operation. The R5494L has a method to become shorter the output delay time. The method is to set the V- pin in between -3V and -2V when C OUT is “H”. Especially, the overcharge detect output delay time is able to reduce into approximately 1/100. Thus, the test time reduction of the protector circuit board is achieved.
NO.EA-360-191209
FEATURES
Manufactured with High Voltage Tolerant Process Low Supply Current High Accuracy Detector Threshold Variety of Detector Threshold VDET3=0.048V ：VDET3×3 -1mV Internal fixed Output delay time (1) Excess discharge-current detector Output Delay ····· 8ms Excess charge-current detector Output Delay ········· 9ms Selectable Functions Selectable Packages DFN1814-6C
APPLICATIONS
Li+ / Li Polymer protector of Overcharge, Overdischarge, and Excess-current for Battery pack High precision protectors for smart-phones and any other gadgets using on board Li+ / Li Polymer battery (1) See “SELECTION GUIDE” for details.
NO.EA-360-191209 SELECTION GUIDE The input threshold of over-charge, over-discharge, excess discharge current, and the package and taping can be designated. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5494Lxxx$-TR DFN1814-6C 5,000 pcs Yes Yes xxx: Set Voltage Code Refer to R5494L Code List. $: Delay Time Version Version t VDET1 (s) t VDET2 (ms) t VDET32 (ms) t VDET4 (ms) t SHORT (μs) A 1 128 8 9 200 : Function Version Version Return from Return from 0-V Charge P Auto Release Auto Release OK G Auto Release Auto Release NG R5494LCode List Code Set Voltage [V] Delay Time Function VDET1 VREL1 VDET2 VREL2 VDET3 VDET4 VSHORT tVDET1 (s) tVDET2 (ms) tVDET3 (ms) tVDET4 (ms) tSHORT (µs) Charge
NO.EA-360-191209 BLOCK DIAGRAM R5494L Block Diagram PIN DESCRIPTION R5494L (DFN1814-6C) Pin Configuration R5494L Pin Description Pin No. Symbol Pin Description
1 V- Charger negative Input pin
2 COUT Output of Over-charge detection, CMOS output
3 DOUT Output of Over-discharge detection, CMOS output
4 VSS Ground pin of the IC. 5 VDD Power Supply pin. The substrate level of the IC.
6 RSENS Over-current detector input pin
NO.EA-360-191209 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings (Ta = 25°C, V SS = 0 V) Symbol Parameter Ratings Unit VDD Supply Voltage −0.3 to 12 V V− V− Pin Input Voltage VDD −30 to VDD +0.3 V VRSENS RSENS Pin Input Voltage VSS −0.3 to VDD +0.3 V VCOUT COUT Pin Output Voltage VDD −30 to VDD +0.3 V VDOUT DOUT Pin Output Voltage VSS −0.3 to VDD +0.3 V PD Power Dissipation 150 mW Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Parameter Rating Unit VDD1 Operating Input Voltage 1.5 to 5.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
NO.EA-360-191209
ELECTRICAL CHARACTERISTICS
R5494LxxxAP Electrical Characteristics Unless otherwise provided, Ta=25C Symbol Item Conditions Min. Typ. Max. Unit VST Minimum Operating Voltage for 0V Charging Voltage Defined as V DD –V-, VDD-Vss = 0V 1.8 V VDET1 Over-charge Threshold Voltage R1=330Ω VDET1 -0.020 VDET1 VDET1 +0.020 V VREL1 Released voltage from Over-charge R1=330Ω VREL1 -0.040 VREL1 VREL1 +0.040 V tVREL1 Release Delay for VD1 V DD= 4.55V → 4.00V 11.2 16 20.8 ms VDET2 Over-discharge Threshold Detect falling edge of supply voltage VDET2 -0.035 VDET2 VDET2 +0.035 V VREL2 Released Voltage from Over-discharge Detect rising edge of supply voltage VREL2 -0.055 VREL2 VREL2 +0.055 V tVDET2 Output Delay of Overdischarge V DD=3V→2.1V 90 128 166 ms tVREL2 Release Delay for VD2 V DD=2.1V→3.2V 2.8 4 5.2 ms VDET3 Excess discharge-current Threshold (1) Detect rising edge of 'RSENS' pin voltage VDET3 -0.004 or VDET3 ×0.9 VDET3 VDET3 +0.004 or VDET3 ×1.1 V VREL3 Released voltage from Excess discharge-current Detect falling edge of 'V-' pin voltage VDD -1.7 VDD -1.35 VDD -0.6 V tVDET3 Output delay of excess discharge-current VDD=3.1V, VRSENS=0V to VDET3×1.3 V- = VRSENS 5.6 8 10.4 ms tVREL3 Output delay of release from excess discharge-current VDD=3.1V, V-=3.1V to 0V V- = VRSENS 2.8 4 5.2 ms VSHORT Short Protection Voltage (2) V DD=3.1V, VRSENS=V- VSHORT -37to-46 VDET3 or VDET3 ×3-1 VSHORT +37 mV tSHORT Delay Time for Short Protection (3) V DD=3.1V, VRSENS=0V to 3.1V V- = VRSENS 140 200 350 µs RSHORT Reset Resistance for Excess Current Protection V DD=3.6V, V- =1.0V 40 60 100 k VDET4 Excess charge-current threshold Detect falling edge of 'RSENS' pin voltage, V- = VRSENS VDET4 ×1.15 VDET4 VDET4 ×0.85 V tVDET4 Output delay of excess charge-current VDD=3.1V, VRSENS=0V to -0.5V V- = VRSENS 6.3 9 11.7 ms (1) It varies the accuracy of the min and max by Detector Threshold. (2) It varies the accuracy of the min and max by the value of the VDET3. Refer to the following table for details. (3) Output delay time for release from Short protection is the same value as tVREL3.
NO.EA-360-191209 R5494LxxxAP Electrical Characteristics (Continued) Unless otherwise provided, Ta=25C Symbol Item Conditions Min. Typ. Max. Unit tVREL4 Output delay of release from excess charge-current VDD=3.1V, V-=-0.5V to 0V V- = VRSENS 2.8 4 5.2 ms VDS Delay Time Shortening Mode Voltage VDD=3.6V -2.6 -2.0 -1.4 V VOL1 Nch ON-Voltage of C OUT Iol=50 A, VDD=4.55V 0.4 0.5 V VOH1 Pch ON-Voltage of C OUT Ioh=-50A, VDD=3.9V 3.4 3.7 V VOL2 Nch ON-Voltage of D OUT Iol=50 A, VDD=1.9V 0.2 0.5 V VOH2 Pch ON-Voltage of D OUT Ioh=-50 A, VDD=3.9V 3.4 3.7 V IDD Supply Current V DD=3.9V, V- =0V 3.0 6.0 A Istandby Standby Current V DD=2.0V 0.5 A
NO.EA-360-191209 R5494LxxxAG Electrical Characteristics Unless otherwise provided, Ta=25C Symbol Item Conditions Min. Typ. Max. Unit Vnochg Maximum Operating Voltage for Inhibition of Charger Voltage Defined as VDD-VSS, V DD-V-=4V 0.4 0.7 1.0 V VDET1 Over-charge Threshold Voltage R1=330Ω VDET1 -0.020 VDET1 VDET1 +0.020 V VREL1 Released voltage from Over-charge R1=330Ω VREL1 -0.040 VREL1 VREL1 +0.040 V tVREL1 Release Delay for VD1 VDD= 4.55V → 4.00V 11.2 16 20.8 ms VDET2 Over-discharge Threshold Detect falling edge of supply voltage VDET2 -0.035 VDET2 VDET2 +0.035 V VREL2 Released Voltage from Over-discharge Detect rising edge of supply voltage VREL2 -0.055 VREL2 VREL2 +0.055 V tVDET2 Output Delay of Over- discharge V DD=3V→2.1V 90 128 166 ms tVREL2 Release Delay for VD2 VDD=2.1V→3.2V 2.8 4 5.2 ms VDET3 Excess discharge-current threshold (1) Detect rising edge of 'RSENS' pin voltage VDET3 -0.004 or VDET3 ×0.9 VDET3 VDET3 +0.004 or VDET3 ×1.1 V VREL3 Released voltage from Excess discharge-current Detect falling edge of 'V-' pin voltage VDD -1.7 VDD -1.35 VDD -0.6 V tVDET3 Output delay of excess discharge-current VDD=3.1V, VRSENS=0V to VDET3×1.3 V- = VRSENS 5.6 8 10.4 ms tVREL3 Output delay of release from excess discharge-current VDD=3.1V, V-=3.1V to 0V V- = VRSENS 2.8 4 5.2 ms VSHORT Short Protection Voltage (2) VDD=3.1V, VRSENS=V- VSHORT -37to-46 VDET3 or VDET3 ×3-1 VSHORT +37 mV tSHORT Delay Time for Short Protection (3) V DD=3.1V, VRSENS=0V to 3.1V V- = VRSENS 140 200 350 µs RSHORT Reset Resistance for Excess Current Protection V DD=3.6V, V- =1.0V 40 60 100 k VDET4 Excess charge-current threshold Detect falling edge of 'RSENS' pin voltage V- = VRSENS VDET4 ×1.15 VDET4 VDET4 ×0.85 V tVDET4 Output delay of excess charge-current VDD=3.1V, VRSENS=0V to -0.5V V- = VRSENS 6.3 9 11.7 ms (1) It varies the accuracy of the min and max by Detector Threshold. (2) It varies the accuracy of the min and max by the value of the VDET3. Refer to the following table for details. (3) Output delay time for release from Short protection is the same value as tVREL3.
NO.EA-360-191209 R5494LxxxAG Electrical Characteristics (Continued) Unless otherwise provided, Ta=25C Symbol Item Conditions Min. Typ. Max. Unit tVREL4 Output delay of release from excess charge-current VDD=3.1V, V-=-0.5V to 0V V- = VRSENS 2.8 4 5.2 ms VDS Delay Time Shortening Mode Voltage VDD=3.6V -2.6 -2.0 -1.4 V VOL1 Nch ON-Voltage of C OUT Iol=50 A, VDD=4.55V 0.4 0.5 V VOH1 Pch ON-Voltage of C OUT Ioh=-50A, VDD=3.9V 3.4 3.7 V VOL2 Nch ON-Voltage of D OUT Iol=50 A, VDD=1.9V 0.2 0.5 V VOH2 Pch ON-Voltage of D OUT Ioh=-50 A, VDD=3.9V 3.4 3.7 V IDD Supply Current V DD=3.9V, V- =0V 3.0 6.0 A Istandby Standby Current V DD=2.0V 0.5 A Characteristics Table when VSHORT = VDET3 × 3 Unit: mV VDET3 V SHORT (Typ.) Min. Max. 30 90 53 127 31 93 56 130 32 96 59 133 33 99 62 136 34 102 65 139 35 105 68 142 36 108 71 145 37 111 74 148 38 114 77 151 39 117 80 154 40 120 82 157 41 123 84 160 42 126 86 163 43 129 88 166 44 132 90 169 45 135 92 172 46 138 94 175 47 141 96 178 48 143 97 180
NO.EA-360-191209
APPLICATION INFORMATION
0.1F 1k 330 R5494L RSENS 10mΩ R5494L Typical Application Circuit Cautions in selecting external components
- R1 and C1 stabilize a supply voltage to the R5494L. A recommended R1 value is equal or less than 1k . A large value of R1 makes detection voltage shift higher because of the conduction current flowed in the R5494L. Further, to stabilize the operation of R5494L, use the C1 with the value of 0.01F or more.
- R1 and R2 can operate also as parts for current limit circuit against reverse charge or applying a charger with excess charging voltage to the R5494L, battery pack. While small value of R1 and R2 may cause over power dissipation rating of the R5494L, therefore a total of “R1+R2” should be 1k or more. Besides, if a large value of R2 is set, release from over-discharge by connecting a charger might not be possible. Recommended R2 value is equal or less than 10k.
- R3 is a resistor for sensing an excess current. If the resistance value is too large, power loss becomes also large. By the excess current, if the R3 is not appropriate, the power loss may be beyond the power dissipation of R3. Choose an appropriate R3 according to the cell specification.
- The typical application circuit diagram is just an example. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary.
- Over-voltage and the over current beyond the absolute maximum rating should not be forced to the protection IC and external components. Although the short protection circuit is built in the IC, if the positive terminal and the negative terminal of the battery pack are short, during the delay time of short limit detector, large current flows through the FET. Select an appropriate FET with large enough current capacity to prevent the IC from burning damage.
NO.EA-360-191209
- If the positive terminal and the negative terminal of the battery pack are short, even though the short protection circuit is built in the IC, during the delay time until detecting the short circuit, a large current may flow through the FET. Select an FET with large enough current capacity in order to endure the large current during the delay time. Sense resistance and on-resistance of the MOSFET selection guideline Short mode is detected by the current base or the relation between V DD at short and total on resistance of external MOSFETs for COUT and DOUT. If short must be detected by the current base determined by Vshort and R3, the next formula must be true, otherwise, the short current limit becomes (VDD - 0.9) / (R3 + Rss (on)) V (on) R R3 0.9 - V SHORT SS DD VSHORT = VDET3×3 or VDET3×4 R3 = External current sense Resistance () RSS (on) = external MOSFETs’ total ON Resistance () VDD = VDD level at short mode. If VDD goes down by the short current, the lowest level is VDD. Note: The short mode is specified at short current determined by the relation between R3 and V SHORT value, Ex. 1 As the Rsense, in case that the 10mΩ is selected as R3 and if the V DD* becomes 3.0V, to detect short at 9A with Vshort = 0.09V, the Rss (on) must be 223mΩ or lower. Otherwise, according to the Rss (on), short current limit is lower than expected. Ex. 2 As the RSENSE, in case the 20mΩ is selected as R3 and if the V DD* becomes 3.0V, to detect short at 8A with VSHORT = 0.16V, the Rss (on) must be 242mΩ or lower.
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