R5480K NISSHINBO | Alldatasheet
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Technical content
1-Cell Li-Ion Battery Protection IC NO.EA-308-230201 OUTLINE The R5480x is a protection IC for over-charge of rechargeable Lithium-ion (Li+)/Lithium polymer battery. The R5480x can detect over-charge, over-discharge, excess-discharge current, and excess-charge current of one- cell Lithium-ion (Li+)/Lithium polymer battery . The external resistor of RSENSE pin allows a high-accuracy detection for excess current. The supply current after detecting over-discharge is suppressed as much as possible by stopping the internal circuit.
FEATURES
High Voltage Tolerant Process Low supply current H igh accuracy detector threshold Variety of detector threshold I nternal fixed Output delay time Excess discharge-current detector Output Delay ·········· 12 ms Excess charge-current detector Output Delay ·············· 16 ms / 8 ms Output Delay Time Shortening Function When the V- level is set at −2.0 V (typ.) during the COUT pin of “High”, the output delay time for the over - charge and the over-discharge detections can be reduced (Delay time for over-charge becomes about 1/100 that of the normal state). Conditions for release over-discharge detector ············ Latch type
NO.EA-308-230201
APPLICATIONS
Li+/Li Polymer protector of over-charge, over-discharge, excess-current for battery pack High precision protectors for smart-phones and any other gadgets using on board Li+/Li Polymer battery SELECTION GUIDE The over-charge and the delay time are user-selectable options. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5480Kxxx$∗-TR DFN(PL)1414-6 5,000 pcs Yes Yes xxx: Set Voltage Code. Refer to “Product Code List” for details. $: Delay Time Code Code tVDET1 [s] tVDET2 [ms] tVDET3 [ms] tVDET4 [ms] tSHORT [μs] C 1 20 12 16 250 U 1 132 12 8 250 ∗: Function Code Code Return from Over-charge Return from Over-discharge 0-V Charge VDET3 [mV] VDET4 [mV] VSHORT [V] G Latch Latch NG 30 to 50 -30 to -20 0.500 L Latch Latch NG 30 to 50 -30 to -20 0.180 M Latch Latch NG 30 to 50 -30 to -20 0.140 N Latch Latch NG 20 to 25 -30 to -20 0.140 P Latch Latch NG 30 to 50 -57 to -30 0.250 Q Latch Latch NG 30 to 50 -57 to -30 0.180 R Latch Latch NG 25 to 30 -30 to -20 0.140
NO.EA-308-230201 R5480K Code List Product Code Set Output Voltage [V] Delay Time Func- tion VDET1 VREL1 VDET2 VREL2 VDET3 VDET4 VSHORT tVDET1 [s] tVDET2 [ms] tVDET3 [ms] tVDET4 [ms] tSHORT [μs] Charge
NO.EA-308-230201 R5480K Code List (Continued) Product Code Set Output Voltage [V] Delay Time Func- tion VDET1 VREL1 VDET2 VREL2 VDET3 VDET4 VSHORT tVDET1 [s] tVDET2 [ms] tVDET3 [ms] tVDET4 [ms] tSHORT [μs] Charge
NO.EA-308-230201 BLOCK DIAGRAM R5480K Block Diagram Short Detector Oscillator VD1 VD2 Level Shift VD3 Counter Logic Circuit Delay Logic Circuit VDD VSS DS Circuit VD4 V- DOUT COUT RSENS
NO.EA-308-230201 PIN DESCRIPTION 5 4 3 1 R5480K (DFN(PL)1414-6) Pin Configuration R5480K Pin Description Pin No. Symbol Description 1 VSS VSS pin. Ground pin for the IC
2 VDD Power supply pin, the substrate voltage level of the IC
3 RSENSE Input of overcurrent detection
4 V− Pin for charger negative input
5 COUT Output of over-charge detection, CMOS output
6 DOUT Output of over-discharge detection, CMOS output
NO.EA-308-230201 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings (Ta = 25°C, VSS = 0 V) Symbol Item Rating Unit VDD Supply Voltage −0.3 to 12.0 V RSENSE V− Pin Voltage RSENSE Pin Voltage VDD - 30 to VDD + 0.3 VSS - 0.3 to VDD + 0.3 V V VCOUT VDOUT COUT Pin Voltage DOUT Pin Voltage VDD - 30 to VDD + 0.3 VSS - 0.3 to VDD + 0.3 V V PD Power Dissipation (Standard Land Pattern) 150 mW Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Item Rating Unit VDD Operating Input Voltage −0.3 to 5.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
NO.EA-308-230201
ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDD1 Operating Input Voltage VDD - VSS 1.5 5.0 V A VNOCHG Maximum Operating Voltage for Inhibition of Charger Voltage Defined as VDD - VSS, VDD - V− = 4 V 0.4 0.7 1.0 V A VDET1 Over-charge Threshold Voltage R1 = 330 Ω ≤ 4.5V VDET1 −0.020 VDET1 VDET1 +0.020 V B > 4.5V VDET1 −0.025 VDET1 +0.025 tVREL1 Release Delay for VD1 VDD = 4V, V− = 0V → 1V 11 16 21 ms C VDET2 Over-discharge Threshold Detect falling edge of supply voltage VDET2 −0.035 VDET2 VDET2 +0.035 V D tVDET2 Output Delay of Over-discharge (R5480KxxxCG/CL/CN/CP/CQ/CR) VDD = 3.6 V → 2.0 V 14 20 26 ms D Output Delay of Over-discharge (R5480KxxxUM) 92 132 172 tVREL2 Release Delay for VD2 VDD = 3V, V− = 3V → 0V 0.7 1.2 1.7 ms E VDET3 Excess discharge-current threshold Detect rising edge of VRSENSE, V− = VRSENSE ≥ 30 mV VDET3 x0.85 VDET3 VDET3 x1.15 V F < 30 mV VDET3 −0.0045 VDET3 +0.0045 tVDET3 Output delay of excess discharge- current (R5480KxxxCG/CL/CN/CP/CQ/CR) VDD = 3.0 V, VRSENSE = 0 V → 0.12 V, V− = VRSENSE 8 12 16 ms F Output delay of excess discharge- current (R5480KxxxUM) 9 12 16 tVREL3 Output delay of release from excess discharge-current VDD = 3.0V, V- = 3V → 0V, V− = VRSENSE 0.7 1.2 1.7 ms F VSHORT Short protection voltage (R5480KxxxCG) VDD = 3.0 V, VRSENSE = V− 0.41 0.50 0.59 V F Short protection voltage (R5480KxxxCL/CQ) 0.135 0.18 0.225 Short protection voltage (R5480KxxxUM/CN/CR) 0.095 0.14 0.185 Short protection voltage (R5480KxxxCP) 0.205 0.250 0.295 tSHORT Output Delay of Short protection VDD = 3.0 V, VRSENSE =
0 V → 3 V, V− = VRSENSE 180 250 425 μs F
(1) Refer to Test Circuits for details.
NO.EA-308-230201 RSHORT Reset resistance for excess discharge-current protection VDD = 3.6 V, V− = 1.0 V 20 45 70 kΩ F Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDET4 Excess charge-current threshold Detect falling edge of VRSENSE, V− = VRSENSE VDET4 x1.15 VDET4 VDET4 x0.85 V G tVDET4 Output delay of excess charge- current (R5480KxxxCG/CL/CN/CP/CQ/CR) VDD = 3.0 V, VRSENSE = 0 V → − 0.3 V, V− = VRSENSE 11 16 21 ms G Output delay of excess charge- current (R5480KxxxUM) 5 8 11 tVREL4 Output delay of release from excess charge-current VDD = 3.0 V, V− = −1 V → 0 V, V− = VRSENSE 0.7 1.2 1.7 ms G VDS Delay Time Shortening Mode Voltage VDD = 3.6 V −2.6 −2.0 −1.4 V G VOL1 Nch ON-Voltage of COUT IOL = 50 μA, VDD = 4.5 V 0.4 0.5 V H VOH1 Pch ON-Voltage of COUT IOH = −50 μA, VDD = 3.9 V 3.4 3.7 V I VOL2 Nch ON-Voltage of DOUT IOL = 50 μA, VDD = 2.0 V 0.2 0.5 V J VOH2 Pch ON-Voltage of DOUT IOH = −50 μA, VDD = 3.9 V 3.4 3.7 V K IDD Supply Current VDD = 3.9 V, V− = 0 V 4.0 8.0 μA L ISTANDBY Standby Current VDD = 2.0 V 0.1 μA L (1) Refer to Test Circuits for details.
NO.EA-308-230201 Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDD1 Operating Input Voltage VDD - VSS 1.5 5.0 V A VNOCHG Maximum Operating Voltage for Inhibition of Charger Voltage Defined as VDD - VSS, VDD - V− = 4 V 0.27 0.7 1.1 V A VDET1 Over-charge Threshold Voltage R1 = 330 Ω ≤ 4.5V VDET1 −0.025 VDET1 VDET1 +0.025 V B > 4.5V VDET1 −0.030 VDET1 +0.030 tVREL1 Release Delay for VD1 VDD = 4 V, V− = 0V → 1V 10.7 16 24.8 ms C VDET2 Over-discharge Threshold Detect falling edge of supply voltage VDET2 −0.040 VDET2 VDET2 +0.040 V D tVDET2 Output Delay of Over-discharge (R5480KxxxCG/CL/CN/CP/CQ/CR) VDD = 3.6 V → 2.0 V 13.4 20 31 ms D Output Delay of Over-discharge (R5480KxxxUM) 88.4 132 204.6 tVREL2 Release Delay for VD2 VDD = 3 V, V− = 3V → 0V 0.65 1.2 1.86 ms E VDET3 Excess discharge-current threshold Detect rising edge of VRSENSE, V− = VRSENSE ≥ 30mV VDET3 x0.83 VDET3 VDET3 x1.17 V F < 30mV VDET3 −0.0052 VDET3 +0.0052 tVDET3 Output delay of excess discharge- current (R5480KxxxCG/CL/CN/CP/CQ/CR) VDD = 3.0 V, VRSENSE = 0 V → 0.12 V, V− = VRSENSE 7.5 12 18.6 ms F Output delay of excess discharge- current (R5480KxxxUM) 8.5 tVREL3 Output delay of release from excess discharge-current VDD = 3.0V, V- = 3V→0V V− = VRSENSE 0.65 1.2 1.86 ms F VSHORT Short protection voltage (R5480KxxxCG) VDD = 3.0 V, VRSENSE = V− 0.400 0.500 0.600 V F Short protection voltage (R5480KxxxCL/CQ) 0.125 0.180 0.235 Short protection voltage (R5480KxxxUM/CN/CR) 0.085 0.140 0.195 Short protection voltage (R5480KxxxCP) 0.195 0.250 0.305 tSHORT Output Delay of Short protection VDD = 3.0 V, VRSENSE = 0 V → 3 V, V− = VRSENSE 160 250 490 µs F (1) Refer to Test Circuits for details.
NO.EA-308-230201 RSHORT Reset resistance for excess discharge-current protection VDD = 3.6 V, V− = 1.0 V 17.3 45 73.3 kΩ F Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDET4 Excess charge-current threshold Detect falling edge of VRSENSE, V− = VRSENSE VDET4 x1.17 VDET4 VDET4 x0.83 V G tVDET4 Output delay of excess charge- current (R5480KxxxCG/CL/CN/CP/CQ/CR) VDD = 3.0 V, VRSENSE = 0 V → − 0.3 V, V− = VRSENSE 10.7 16 24.8 ms G Output delay of excess charge- current (R5480KxxxUM) 4.8 8 12.4 tVREL4 Output delay of release from excess charge-current VDD = 3.0 V, V− = −1 V → 0 V V− = VRSENSE 0.65 1.2 1.86 ms G VDS Delay Time Shortening Mode Voltage VDD = 3.6 V −2.7 −2.0 −1.2 V G VOL1 Nch ON-Voltage of COUT IOL = 50 μA, VDD = 4.5 V 0.4 0.5 V H VOH1 Pch ON-Voltage of COUT IOH = −50 μA, VDD = 3.9 V 3.4 3.7 V I VOL2 Nch ON-Voltage of DOUT IOL = 50 μA, VDD = 2.0 V 0.2 0.5 V J VOH2 Pch ON-Voltage of DOUT IOH = −50 μA, VDD = 3.9 V 3.4 3.7 V K IDD Supply Current VDD = 3.9 V, V− =0 V 4.0 8.7 μA L ISTANDBY Standby Current VDD = 2.0 V 0.12 μA L All of these specifications are guaranteed by design, not tested in mass production. (1) Refer to Test Circuits for details.
NO.EA-308-230201 Test Circuits D V VDD VSS DOUT RSENS C VDD VSS COUT RSENS A OSCILLOSCOPE VDD DOUT COUT VSS V V RSENS E VDD VSS DOUT RSENS H V A VDD VSS COUT RSENS G V VDD VSS COUT RSENS I V A VDD VSS COUT RSENS F V A VDD VSS DOUT RSENS B V VDD VSS COUT RSENS J V A VDD VSS DOUT RSENS K V A VDD VSS DOUT RSENS L A VDD VSS RSENS
NO.EA-308-230201
APPLICATION INFORMATION
Typical Application Circuit VDD COUT DOUT VSS 0.1μF 1kΩ 330Ω R5480K RSENSE 10mΩ Guidelines for Component Selection R1 and C1 stabilize a supply voltage to the R5480. A recommended R1 value is equal or less than 1k Ω. A large value of R1 makes detection voltage shift higher because of the conduction current flowed in the R5480x. Further, to stabilize the operation of R5480K, use the C1 with the value of 0.01µF or more. R1 and R2 can operate also as parts for current limit circuit against reverse charge or applying a charger with excess charging voltage to the R5480K, battery pack. While small value of R1 and R2 may cause over power dissipation rating of the R5480K, therefore a total of “R1+R2” should be 1kΩ or more. Besides, if a large value of R2 is set, release from over -discharge by connecting a charger might not be possible. Recommended R2 value is equal or less than 10kΩ. R3 is a resistor for sensing an excess current. If the resistance value is too large, power loss becomes also large. By the excess current, if the R3 is not appropriate, the power loss may be beyond the power dissipation of R3. Choose an appropriate R3 according to the cell specification.
NO.EA-308-230201 The typical application circuit diagram is just an example. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary. Over-voltage and the over current beyond the absolute maximum rating should not be forced to the protection IC and external components. Although the short protection circuit is built in the IC, if the positive terminal and the negative terminal of the battery pack are short, during the delay time of short limit detector, large current flows through the FET. Select an appropriate FET with large enough current capacity to prevent the IC from burning damage. Sense Resistance and On-resistance of the MOSFET Selection Guideline Short mode is detected by the current base or the relation between VDD at short and total on- resistance of external MOSFETs for COUT and DOUT. If short must be detected by the current base determined by V SHORT and R3, the next formula must be true, otherwise, the short current limit becomes (VDD - 0.9)/(R3 + RSS(ON)) VDD − 0.9 R3 + RSS (on) ≥ VSHORT V SHORT: Short protection voltage, refer to “Electrical Characteristics” for set voltages. R3: External current sense resistance [Ω] RSS(on): external MOSFETs’ total on-resistance [Ω] VDD: VDD level at short mode. If VDD goes down by the short current, the lowest level is VDD. Ex. 1 As the RSENSE, in case that the 10 mΩ is selected as R3 and if the VDD becomes 3.0 V, to detect short at 50 A with VSHORT = 0.5 V, the RSS(on) must be 32 mΩ or lower. Ex. 2 As the R SENSE, in case the 20 mΩ is selected as R3 and if the VDD becomes 3.0 V, to detect short at 25 A with VSHORT = 0.5 V, the RSS(on) must be 64 mΩ or lower. If the RSS(on) value is higher than the value calculated by this formula, the short current limit will be less than the desired value.
NO.EA-308-230201 TECHNICAL NOTES A peripheral component or the device mounted on PCB should not exceed a rated voltage, a rated current or a rated power. When designing a peripheral circuit, please be fully aware of the following points.
- Please evaluate the product at the PCB level before use, as some symptoms may remain that cannot be confirmed by the evaluation at the IC level.
- When using any coating or underfill to improve moisture resistance or joining strength, evaluate them adequately before using. In certain materials or coating conditions, corrosion by contained constituents, current leakage by moisture absorption, crack and delamination by physical stress can happen. If the curing temperature of the coating material or underfill material exceeds the absolute maximum rating, the electrical characteristics of this product may change.
- When performing X -ray inspection in mass production process and evaluation build stage such as the product functions and characteristics confirmation, please confirm X-ray irradiation does not exceed 1.5Gy (absorbed dose for air).
PACKAGE DIMENSIONS DFN(PL)1414-6 Ver. A i DFN(PL)1414-6 Package Dimensions ∗ The tab on the bottom of the package shown by blue circle is No Connection.
Ver. B i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5480K [DFN(PL)1414-6] Part Marking NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or distributor before attempting to use AOI. R5480K Part Marking List Product Name Product Name R5480K228CG D0 R5480K287CL E8 R5480K240CG D1 R5480K324CL E9 R5480K241CG D2 R5480K326CL Z0 R5480K247CG D3 R5480K342UM Z1 R5480K260CL D4 R5480K348CL Z2 R5480K261CL D5 R5480K349CL Z3 R5480K262CL D6 R5480K354CL Z4 R5480K257CL D7 R5480K355CL Z5 R5480K266CL D8 R5480K601CN Z 6 R5480K267CL D9 R5480K602CQ Z 7 R5480K228CL E0 R5480K603CP Z 8 R5480K275CL E1 R5480K604CR Z 9 R5480K277CL E2 R5480K278CL E3 R5480K283CL E4 R5480K284CL E5 R5480K285CL E6 R5480K286CL E7
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