R5464K NISSHINBO | Alldatasheet

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High Accuracy 2-Cell Li-ion Battery Protection IC with Alarm Function NO.EA-282-240322 OUTLINE The R5464K is a n overcharge/ overdischarg e protector for 2-cell Li-ion batteries that can produce a high- accuracy alarm- signal. The R5464K has an alarm signal output , a temperature detection, an overcharge voltage detection, an overdischarge voltage/ discharge overcurrent detection and a charge overcurrent detection. The R5464K is composed of eight voltage detectors, a temperature detector, a reference unit, a delay circuit, a short circuit protector, an oscillator, a counter, and a logic circuit. When the over -charge voltage or overcharge current is detected, the battery voltage crosses the each detector threshold, the output of COUT pin switches to “L” level after internal fixed delay time. To release overcharge or charge overcurrent detector, after detecting overcharge, or charge overcurrent, the detector will be released and the output of COUT becomes "H" when a kind of load is connected to VDD after a charger is disconnected from the battery pack and the cell voltage becomes lower than overcharge detector threshold. Even if a charger is continuously connected to the battery pack, when the cell voltage becomes lower than the overcharge detector released voltage, overcharge state is released. The output of DOUT pin, the output of the overdischarge detector and the discharge overcurrent detector, switches to “L” level after internally fixed delay time, when discharged voltage crosses the detector threshold. To release overdischarge detector, after detecting overdisc harge voltage, connect a charger to the battery pack, and when the battery supply voltage becomes higher than the over -discharge detector threshold, the overdischarge detector is released and the output of DOUT becomes "H". When the overcharge alarm is detected, after the internal fixed delay time, the output of AOUT becomes "H" from high impedance at normal state. Further, with an external thermistor, if the temperature is 45°C or more, the overcharge alarm detector threshold shifts from normal temperature alarm detector threshold to the high temperature alarm detector threshold. To release the overcharge alarm detector, when the battery voltage becomes lower than the released voltage from overcharge alarm, the output of AOUT becomes from "H" to high impedance. When the thermistor detect temperature becomes lower than 40°C, and cell voltage is equal or lower than the alarm detector threshold at normal temperature, the output of AOUT becomes "H" from high impedance. After detecting discharge overcurrent or short current, when the load is disconnected, the discharge overcurrent condition or short condition is released and DOUT becomes “H”. After detecting overdischarge voltage, the supply current will be kept extremely low by halting internal circuits' operation. When the output of COUT is “H”, if V− pin level is set at typically equal or lower than −1.6 V, the delay time of detectors can be shortened. Especially, the delay time of the over-charge detector and overdischarge detector can be reduced into approximately 1/ 60 and the test time for protection circuit of PCB can be reduced. The output type of COUT and DOUT is CMOS. The output type of AOUT is Pch open drain.

NO.EA-282-240322

FEATURES

  • High-withstand Voltage Process
  • Low Consumption Current
  • High-accuracy Voltage Detection Discharge Overcurrent Detection Accuracy ········ ±15 mV
  • Selectable Detection Voltage Alarm Detection Voltage (Normal Temp.) ··········· 3.2 V to 4.4 V, 0.005 V step Difference in Alarm Detection Voltage ··············· − 0 V to −0.150 V, 0.005 V step ( Normal Temp - High Temp.) Discharge Overcurrent Detection Voltage ·········· 0.05 V to 0.24 V, 0.005 V step Charge Overcurrent Detection Voltage ·············· − 0.22 V to −0.1 V, 0.005 V step Overcharge Restoration Hysteresis Voltage ······· − 0 V to −0.25 V, 0.010 V step
  • Alarm Detection Switching
  • Detection Delay Time Charge Overcurrent Detection Delay Time ········· Typ. 8 ms
  • Delay Time Shortening (2) Reduction in Overcharge Detection Delay Time ······ Approximately 1/60
  • 0 V Battery Charge Option
  • Selectable Hysteresis (5°C) to Alarm Detection Temperature (High) (1) The difference between the alarm detection voltage and the alarm restoration voltage is hysteresis. The hysteresis in normal temperature is set to the same value as the hysteresis in high temperature. (2) When the output of COUT is “H”, if V−pin level is set at typically equal or lower than −1.6 V, the delay time can be shortened.

NO.EA-282-240322 APPLICATION

  • Overcharge/ Overdischarge/ Overcurrent Protector for 2-Cell Li-ion/ Li-polymer Battery Pack
  • Overcharge/ Overdischarge/ Overcurrent Protector for Single Lens Reflex Camera SELECTION GUIDE The overcharge, overdischarge, discharge overcurrent, charge overcurrent, 0-V battery charge option and their detection delay times are user-selectable options. Product Name Package Quantity per Reel Pb Free Halogen Free R5464Kxxx$∗-TR DFN(PL)2527-10 5,000 pcs Yes Yes xxx: Specify the overcharge alarm detection voltage, overcharge detection voltage, overdischarge detection voltage, discharge current and charge overcurrent. $: Specify the delay times of overcharge alarm detection voltage (tVALM), overcharge detection voltage (tVDET1), overdischarge detection voltage (tVDET2), discharge overcurrent (tVDET3), and charge overcurrent (tVDET4). (A) tVALM = 6 ms, tVDET1 = 1 s, tVDET2 = 128 ms, tVDET3 = 12 ms, tVDET4 = 8 ms (C) tVALM = 6 ms, tVDET1 = 1 s, tVDET2 = 128 ms, tVDET3 = 16 ms, tVDET4 = 8 ms (D) tVALM = 36 ms, tVDET1 = 1 s, tVDET2 = 128 ms, tVDET3 = 12 ms, tVDET4 = 8 ms ∗: Specify the overcharge restoration method, the overdischarge restoration method, the 0-V battery charge, the high temperature alarm, the normal state of AOUT, the AOUT output circuit type, and the alarm output type. Overcharge Restoration Method Overdischarge Restoration Method 0-V Battery Charge High Temp. Alarm Normal State of AOUT AOUT Output Circuit Alarm Output Type D Automatic Latch No Yes Open Pch Open Drain High/ Open G Automatic Latch Yes Yes High Pch Open Drain High/ Open/ Middle

NO.EA-282-240322 Product Code List Product Code VDET1 VREL1 VDET2 VDET3 VDET4 VALM VRAL VALMH VRALH THALM THRAL

NO.EA-282-240322 BLOCK DIAGRAMS VSS VDD Delay Logic Circuit DOUT COUT Short Detector Level Shift VD2L VD4 VD3 DC Circuit VC VD1L VD2U VD1U Oscillator Counter Logic Circuit TIN RIN EN VALMU TSWH VALML Logic Circuit AOUT PS R5464KxxxxD Block Diagram VSS VDD Delay Logic Circuit DOUT COUT Short Detector Level Shift VD2L VD4 VD3 DC Circuit VC VD1L VD2U VD1U Oscillator Counter Logic Circuit TIN RIN EN TSWH Logic Circuit AOUT VALMU VALML PS R5464KxxxxG Block Diagram

NO.EA-282-240322 PIN DESCRIPTIONS Top View 6 10 7 8 9 5 1 4 3 2 Bottom View 10 6 9 8 7 1 5 2 3 4 DFN (PL) 2527-10 Pin Configuration DFN(PL)2527-10 Pin Description Pin No. Symbol Description 1 VDD Power supply pin. Substrate level of the IC

2 VSS GND pin

3 RIN Termination input pin of an external resistor

4 TIN Divider resister input pin between an external thermistor and

5 VC Input pin of the center voltage between two-cell

6 COUT Output pin of over-charge detection, CMOS output

7 V− Charger negative input pin

8 PS Over-charge alarm output Pch source pin

9 AOUT Over-charge alarm output pin. Pch open drain output

10 DOUT Output pin of over-discharge detection, CMOS output

∗ The tab on the bottom of the package is substrate level (VDD). It is recommended that the tab be connected to the VDD pin on the board, or otherwise be left floating.

NO.EA-282-240322 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings Symbol Item Rating Unit VDD VDD Pin Voltage −0.3 to 12 V VC VC Pin Voltage VSS −0.3 to VDD +0.3 V V− V− Pin Voltage VDD −30 to VDD +0.3 V VCOUT COUT Pin Voltage VDD −30 to VDD +0.3 V VDOUT DOUT Pin Voltage VSS −0.3 to VDD +0.3 V VAOUT AOUT Pin Voltage VDD −30 to VDD +0.3 V PD Power Dissipation(1) (DFN(PL)2527-10, JEDEC STD.51-7 Test Land Pattern) 2800 mW Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITION Symbol Item Rating Unit VDD1 Operating Input Voltage 1.5 to 10.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And t he semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Refer to POWER DISSIPATION in SUPPLEMENTSRY ITEMS for detail information.

NO.EA-282-240322

ELECTRICAL CHARACTERISTICS

R5464KxxxAD Electrical Characteristics (Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit Note VDD1 Operating Input Voltage Voltage between VDD and VSS 1.5 10 V A Vnochu Max. Un-chargeable Voltage of CELL1 Voltage between VDD and VC 0.6 0.8 1.0 V B Vnochl Max. Un-chargeable Voltage of CELL2 Voltage between VC and VSS 0.6 0.8 1.0 V D VDET1U Overcharge Detection Voltage of CELL1 R1 = 330 Ω, Ta = 0°C to 50°C(1) VDET1U −0.015 VDET1U VDET1U +0.010 V B VREL1U Overcharge Restoration Voltage of CELL1 R1 = 330 Ω VREL1U −0.030 VREL1U VREL1U +0.030 V B VALMU Overcharge Alarm Detection Voltage of CELL1 R1 = 330 Ω, Ta = 0°C to 45°C(1) VALMU −0.015 VALMU VALMU +0.010 V C VRALU Overcharge Alarm Restoration of CELL1 R1 = 330 Ω, Ta = 0°C to 45°C(1) VRALU −0.030 VRALU −0.030(2) VRALU VRALU +0.010 VRALU +0.030(2) V C VALMUH Overcharge Alarm Detection Voltage of CELL1 (High Temp.) R1 = 330 Ω, Ta = 45°C to 60°C(1) VALMUH −0.015 VALMUH VALMUH +0.010 V C VRALUH Overcharge Alarm Restoration Voltage of CELL1 (High Temp.) R1 = 330 Ω, Ta = 45°C to 60°C(1) VRALUH −0.030 VRALUH −0.030(2) VRALUH VRALUH +0.010 VRALUH +0.030(2) V C VDET1L Overcharge Detection Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 50°C(1) VDET1L −0.015 VDET1L VDET1L +0.010 V D VREL1L Overcharge Restoration Voltage of CELL2 R2 = 330 Ω VREL1L −0.030 VREL1L VREL1L +0.030 V D VALML Overcharge Alarm Detection Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 45°C(1) VALML −0.015 VALML VALML +0.010 V E VRALL Overcharge Alarm Restoration Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 45°C(1) VRALL −0.030 VRALL −0.030(2) VRALL VRALL +0.010 VRALL +0.030(2) V E VALMLH Overcharge Alarm Detection Voltage of CELL2 (High Temp.) R2 = 330 Ω, Ta = 45°C to 60°C(1) VALMLH −0.015 VALMLH VALMLH +0.010 V E VRALLH Overcharge Alarm Restoration Voltage of CELL2 (High Temp.) R2 = 330 Ω, Ta = 45°C to 60°C(1) VRALLH −0.030 VRALLH −0.030(2) VRALLH VRALLH +0.010 VRALLH +0.030(2) V E TALH1 Alarm Detection Temp. (High) 45 °C C TRAH1 Alarm Restoration Temp. (High) TRAH1 °C C tVDET1 Overcharge Detection Delay Time VDD−VC = 3.5 V → 4.5 V, VC−VSS = 3.5 V 0.7 1.0 1.3 s B tVREL1 Overcharge Restoration Delay Time VDD−VC = 4.5 V → 3.5 V, VC−VSS = 3.5 V 11 16 21 ms B tVALM Alarm Detection Delay Time VDD−VC = 3.5 V → 4.5 V, VC−VSS = 3.5 V 4 6 8 ms C tVRAL Alarm Detection Restoration Time VDD−VC = 4.5 V → 3.5 V, VC−VSS = 3.5 V 1.4 1.9 2.4 ms C (1) Considering of variation in process parameters, we compensate for this characteristic related to temperature by laser- trim, however, this specification is guaranteed by design, not mass production tested. (2) If there’s no alarm restoration hysteresis, the max. restoration voltage is +0.010 V and the min. restoration voltage is – 0.030 V.

NO.EA-282-240322 R5464KxxxAD Electrical Characteristics (Continued) (Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit Note VDET2U Over-discharge Detection Voltage of CELL1 Falling Voltage Detection VDET2U –0.050 VDET2U VDET2U +0.050 V F VDET2L Over-discharge Detection Voltage of CELL2 Falling Voltage Detection VDET2L –0.050 VDET2L VDET2L +0.050 V G VREL2U Over-discharge Release Voltage of CELL1 Rising Voltage Detection VDET2U ×0.975 VDET2U VDET2U ×1.025 +0.045 V F VREL2L Over-discharge Release Voltage of CELL2 Rising Voltage Detection VDET2L ×0.975 VDET2L VDET2L ×1.025 V G tVDET2 Over-discharge Detection Delay Time VDD – VC = 3.5 V → 2.2 V, VC – VSS = 3.5 V 89 128 167 ms F tVREL2 Over-discharge Restoration Delay Time VDD – VC = 2.2 V → 3.5 V, VC – VSS = 3.5 V 0.7 1.2 1.7 ms F VDET3 Discharge Overcurrent Detection Voltage Rising Voltage Detection VDET3 –0.015 VDET3 VDET3 +0.015 V H tVDET3 Discharge Overcurrent Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → 0.5 V 8 12 16 ms H tVREL3 Discharge Overcurrent Restoration Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 3 V → 0 V 0.7 1.2 1.7 ms H Vshort Short-circuit Detection Voltage VDD – VC = 3.5 V, VC –VSS = 3.5 V 0.6 1.0 1.4 V H tshort Short-circuit Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → 7 V 230 300 500 μs H Rshort Discharge Overcurrent Restoration Resistance VDD – VC = 3.5 V, VC –VSS = 3.5 V, V– = 1 V 25 40 75 kΩ H VDET4 Charge Overcurrent Detection Voltage Falling Voltage Detection VDET4 –0.020 VDET4 VDET4 +0.020 V I tVDET4 Charge Overcurrent Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → –1 V 5 8 11 ms I tVREL4 Charge Overcurrent Restoration Delay Time VDD – VC = 3.5 V, VC –VSS = 3.5 V, V– = –1 V → 0 V 0.7 1.2 1.7 ms I VDS Delay Time Shortening Mode VDD – VC = 4.4 V, VOL1 Nch On-voltage of COUT IOL = 50 μA, VDD – VC = 4.5 V, VC – VSS = 4.5 V 0.4 0.5 V J VOH1 Pch On-voltage of COUT IOH = −50 μA, VDD – VC = 3.9 V, VC – VSS = 3.9 V 6.8 7.4 V K VOL2 Nch On-voltage of DOUT IOL = 50 μA, VDD – VC = 2.0 V, VC – VSS = 2.0 V 0.2 0.5 V L VOH2 Pch On-voltage of DOUT IDD = −50 μA, VDD – VC = 3.9 V, VC – VSS = 3.9 V 6.8 7.4 V M VOH3 Pch On-voltage of AOUT IDD = −50 μA, VDD – VC = 4.5 V, VC – VSS = 4.5 V 8.0 8.6 V N IDD Supply Current VDD – VC = 3.9 V, VC – VSS = 3.9 V, V– = 0 V 6.0 12.0 μA P Istandby Standby Current VDD – VC = 2.0 V, VC –VSS = 2.0 V 0.1 μA P

NO.EA-282-240322 R5464KxxxDD Electrical Characteristics (Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit Note VDD1 Operating Input Voltage Voltage between VDD and VSS 1.5 10 V A Vnochu Max. Un-chargeable Voltage of CELL1 Voltage between VDD and VC 0.6 0.8 1.0 V B Vnochl Max. Un-chargeable Voltage of CELL2 Voltage between VC and VSS 0.6 0.8 1.0 V D VDET1U Over-charge Detection Voltage of CELL1 R1 = 330 Ω, Ta = 0°C to 50°C(1) VDET1U –0.015 VDET1U VDET1U +0.010 V B VREL1U Over-charge Restoration Voltage of CELL1 R1 = 330 Ω VREL1U –0.030 VREL1U VREL1U +0.030 V B VALMU Over-charge Alarm Detection Voltage of CELL1 R1 = 330 Ω, Ta = 0°C to 45°C(1) VALMU –0.015 VALMU VALMU +0.010 V C VRALU Over-charge Alarm Restoration Voltage of CELL1 R1 = 330 Ω, Ta = 0°C to 45V(1) VRALU –0.030 VRALU –0.030(2) VRALU VRALU +0.010 VRALU +0.030(2) V C VALMUH Over-charge Alarm Detection Voltage of CELL1 (High Temp.) R1 = 330 Ω, Ta = 45°C to 60°C(1) VALMUH –0.015 VALMUH VALMUH +0.010 V C VRALUH Over-charge Alarm Restoration Voltage of CELL1 (High Temp.) R1 = 330 Ω, Ta = 45°C to 60°C(1) VRALUH –0.030 VRALUH –0.030(2) VRALUH VRALUH +0.010 VRALUH +0.030(2) V C VDET1L Over-charge Detection Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 50°C(1) VDET1L –0.015 VDET1L VDET1L +0.010 V D VREL1L Over-charge Restoration Voltage of CELL2 R2 = 330 Ω VREL1L –0.030 VREL1L VREL1L +0.030 V D VALML Over-charge Alarm Detection Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 45°C(1) VALML –0.015 VALML VALML +0.010 V E VRALL Over-charge Alarm Restoration Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 45°C(1) VRALL –0.030 VRALL –0.030(2) VRALL VRALL +0.010 VRALL +0.030(2) V E VALMLH Over-charge Alarm Detection Voltage of CELL2 (High Temp.) R2 = 330 Ω, Ta = 45°C to 60°C(1) VALMLH –0.015 VALMLH VALMLH +0.010 V E VRALLH Over-charge Alarm Restoration Voltage of CELL2 (High Temp.) R2 = 330 Ω, Ta = 45°C to 60°C(1) VRALLH –0.030 VRALLH –0.030(2) VRALLH VRALLH +0.010 VRALLH +0.030(2) V E TALH1 Alarm Detection Temp. (High) 45 °C C TRAH1 Alarm Restoration Temp. (High) TRAH1 °C C tVDET1 Over-charge Detection Delay Time VDD – VC = 3.5 V → 4.5 V, VC – VSS = 3.5 V 0.7 1.0 1.3 s B tVREL1 Over-charge Restoration Delay Time VDD – VC = 4.5 V → 3.5 V, VC – VSS = 3.5 V 11 16 21 ms B tVALM Alarm Detection Delay Time VDD – VC = 3.5 V → 4.5 V, VC – VSS = 3.5 V 25 36 47 ms C tVRAL Alarm Detection Restoration Time VDD – VC = 4.5 V → 3.5 V, VC – VSS = 3.5 V 1.4 1.9 2.4 ms C (1) Considering of variation in process parameters, we compensate for this characteristic related to temperature by laser- trim, however, this specification is guaranteed by design, not mass production tested. (2) If there’s no alarm restoration hysteresis, the max. restoration voltage is +0.010 V and the min. restoration voltage is – 0.030 V.

NO.EA-282-240322 R5464KxxxDD Electrical Characteristics (Continued) (Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit Note VDET2U Over-discharge Detection Voltage of CELL1 Falling Voltage Detection VDET2U –0.050 VDET2U VDET2U +0.050 V F VDET2L Over-discharge Detection Voltage of CELL2 Falling Voltage Detection VDET2L –0.050 VDET2L VDET2L +0.050 V G VREL2U Over-discharge Release Voltage of CELL1 Rising Voltage Detection VDET2U ×0.975 VDET2U VDET2U ×1.025 +0.045 V F VREL2L Over-discharge Release Voltage of CELL2 Rising Voltage Detection VDET2L ×0.975 VDET2L VDET2L ×1.025 V G tVDET2 Over-discharge Detection Delay Time VDD – VC = 3.5 V → 2.2 V, VC – VSS = 3.5 V 89 128 167 ms F tVREL2 Over-discharge Restoration Delay Time VDD – VC = 2.2 V → 3.5 V, VC – VSS = 3.5 V 0.7 1.2 1.7 ms F VDET3 Discharge Overcurrent Detection Voltage Rising Voltage Detection VDET3 −0.015 VDET3 VDET3 +0.015 V H tVDET3 Discharge Overcurrent Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → 0.5 V 8 12 16 ms H tVREL3 Discharge Overcurrent Restoration Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 3 V → 0 V 0.7 1.2 1.7 ms H Vshort Short-circuit Detection Voltage VDD – VC = 3.5 V, VC – VSS = 3.5 V 0.6 1.0 1.4 V H tshort Short-circuit Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → 7 V 230 300 500 μs H Rshort Discharge Overcurrent Restoration Resistance VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 1 V 25 40 75 kΩ H VDET4 Charge Overcurrent Detection Voltage Falling Voltage Detection VDET4 −0.020 VDET4 VDET4 +0.020 V I tVDET4 Charge Overcurrent Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → –1 V 5 8 11 ms I tVREL4 Charge Overcurrent Restoration Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = –1 V → 0 V 0.7 1.2 1.7 ms I VDS Delay Time Shortening Mode VDD – VC = 4.4 V, VOL1 Nch On-voltage of COUT IOL = 50 μA, VDD – VC = 4.5 V, VC – VSS = 4.5 V 0.4 0.5 V J VOH1 Pch On-voltage of COUT IOH = –50 μA, VDD – VC = 3.9 V, VC – VSS = 3.9 V 6.8 7.4 V K VOL2 Nch On-voltage of DOUT IOL = 50 μA, VDD – VC = 2.0 V, VC – VSS = 2.0 V 0.2 0.5 V L VOH2 Pch On-voltage of DOUT IDD = –50 μA, VDD – VC = 3.9 V, VC – VSS = 3.9 V 6.8 7.4 V M VOH3 Pch On-voltage of AOUT IDD = −50 μA, VDD – VC = 4.5 V, VC – VSS = 4.5 V 8.0 8.6 V N IDD Supply Current VDD – VC = 3.9 V, VC – VSS = 3.9 V, V– = 0 V 6.0 12.0 μA P Istandby Standby Current VDD – VC = 2.0 V, VC – VSS = 2.0 V 0.1 μA P

NO.EA-282-240322 R5464KxxxCG Electrical Characteristics (Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit Note VDD1 Operating Input Voltage Voltage between VDD and VSS 1.5 10 V A Vst Min. Operating Voltage of 0-V Battery Charge Voltage between VDD and V–, VDD – VSS = 0 V 1.8 V A VDET1U Over-charge Detection Voltage of CELL1 R1 = 330 Ω, Ta = 0°C to 50°C(1) VDET1U –0.015 VDET1U VDET1U +0.010 V B VREL1U Over-charge Restoration Voltage of CELL1 R1 = 330 Ω VREL1U –0.030 VREL1U VREL1U +0.030 V B VALMU Over-charge Alarm Detection Voltage of CELL1 R1 = 330 Ω, Ta = 0°C to 45°C(1) VALMU –0.015 VALMU VALMU +0.010 V C VRALU Over-charge Alarm Restoration Voltage of CELL1 R1 = 330 Ω, Ta = 0°C to 45°C(1) VRALU –0.030 VRALU –0.030(2) VRALU VRALU +0.010 VRALU +0.030(2) V C VALMUH Over-charge Alarm Detection Voltage of CELL1 (High Temp.) R1 = 330 Ω, Ta = 45°C to 60°C(1) VALMUH –0.015 VALMUH VALMUH +0.010 V C VRALUH Over-charge Alarm Restoration Voltage of CELL1 (High Temp.) R1 = 330 Ω, Ta = 45°C to 60°C(1) VRALUH –0.030 VRALUH –0.030(2) VRALUH VRALUH +0.010 VRALUH +0.030(2) V C VDET1L Over-charge Detection Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 50°C(1) VDET1L –0.015 VDET1L VDET1L +0.010 V D VREL1L Over-charge Restoration Voltage of CELL2 R2 = 330 Ω VREL1L –0.030 VREL1L VREL1L +0.030 V D VALML Over-charge Alarm Detection Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 45°C(1) VALML –0.015 VALML VALML +0.010 V E VRALL Over-charge Alarm Restoration Voltage of CELL2 R2 = 330 Ω, Ta = 0°C to 45°C(1) VRALL –0.030 VRALL –0.030(2) VRALL VRALL +0.010 VRALL +0.030(2) V E VALMLH Over-charge Alarm Detection Voltage of CELL2 (High Temp.) R2 = 330 Ω, Ta = 45°C to 60°C(1) VALMLH –0.015 VALMLH VALMLH +0.010 V E VRALLH Over-charge Alarm Restoration Voltage of CELL2 (High temp.) R2 = 330 Ω, Ta = 45°C to 60°C(1) VRALLH –0.030 VRALLH –0.030(2) VRALLH VRALLH +0.010 VRALLH +0.030(2) V E TALH1 Alarm Detection Temp. (High) 45 °C C TRAH1 Alarm Restoration Temp. (High) TRAH1 °C C tVDET1 Over-charge Detection Delay Time VDD – VC = 3.5 V → 4.5 V, VC – VSS = 3.5 V 0.7 1.0 1.3 s B tVREL1 Over-charge Restoration Delay Time VDD – VC = 4.5 V → 3.5 V, VC – VSS = 3.5 V 11 16 21 ms B tVALM Alarm Detection Delay Time VDD – VC = 3.5 V → 4.5 V, VC – VSS = 3.5 V 4 6 8 ms C tVRAL Alarm Detection Restoration Time VDD – VC = 4.5 V → 3.5 V, VC – VSS = 3.5 V 1.4 1.9 2.4 ms C (1) Considering of variation in process parameters, we compensate for this characteristic related to temperature by laser- trim, however, this specification is guaranteed by design, not mass production tested. (2) If there’s no alarm restoration hysteresis, the max. restoration voltage is +0.010 V and the min. restoration voltage is – 0.030 V.

NO.EA-282-240322 R5464KxxxCG Electrical Characteristics (Continued) (Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit Note VDET2U Over-discharge Detection Voltage of CELL1 Falling Voltage Detection VDET2U –0.050 VDET2U VDET2U +0.050 V F VDET2L Over-discharge Detection Voltage of CELL2 Falling Voltage Detection VDET2L –0.050 VDET2L VDET2L +0.050 V G VREL2U Over-discharge Release Voltage of CELL1 Rising Voltage Detection VDET2U ×0.975 VDET2U VDET2U ×1.025 +0.045 V F VREL2L Over-discharge Release Voltage of CELL2 Rising Voltage Detection VDET2L ×0.975 VDET2L VDET2L ×1.025 V G tVDET2 Over-discharge Detection Delay Time VDD – VC = 3.5 V → 2.2 V, VC – VSS = 3.5 V 89 128 167 ms F tVREL2 Over-discharge Restoration Delay Time VDD – VC = 2.2 V → 3.5 V, VC – VSS = 3.5 V 0.7 1.2 1.7 ms F VDET3 Discharge Overcurrent Detection Voltage Rising Voltage Detection VDET3 –0.015 VDET3 VDET3 +0.015 V H tVDET3 Discharge Overcurrent Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → 0.5 V 11 16 21 ms H tVREL3 Discharge Overcurrent Restoration Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 3 V → 0 V 0.7 1.2 1.7 ms H Vshort Short-circuit Detection Voltage VDD – VC = 3.5 V, VC – VSS = 3.5 V 0.6 1.0 1.4 V H tshort Short-circuit Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → 7 V 230 300 500 μs H Rshort Discharge Overcurrent Restoration Resistance VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 1 V 25 40 75 kΩ H VDET4 Charge Overcurrent Detection Voltage Falling Voltage Detection VDET4 –0.020 VDET4 VDET4 +0.020 V I tVDET4 Charge Overcurrent Detection Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = 0 V → –1 V 5 8 11 ms I tVREL4 Charge Overcurrent Restoration Delay Time VDD – VC = 3.5 V, VC – VSS = 3.5 V, V– = –1 V → 0 V 0.7 1.2 1.7 ms I VDS Delay Time Shortening Mode Voltage VDD – VC = 4.4 V, VOL1 Nch On-voltage of COUT IOL = 50 μA, VDD – VC = 4.5 V, VC – VSS = 4.5 V 0.4 0.5 V J VOH1 Pch On-voltage of COUT IOH = –50 μA, VDD – VC = 3.9 V, VC – VSS = 3.9 V 6.8 7.4 V K VOL2 Nch On-voltage of DOUT IOL = 50 μA, VDD – VC = 2.0 V, VC – VSS = 2.0 V 0.2 0.5 V L VOH2 Pch On-voltage of DOUT IDD = –50 μA, VDD – VC = 3.9 V, VC – VSS = 3.9 V 6.8 7.4 V M VOH3 Pch On-voltage of AOUT IDD = –50 μA,VDD – VC = 3.9 V, VC – VSS = 3.9 V 6.8 7.4 V N RAOUT AOUT Pin Internal Resistance 380 500 620 kΩ O IDD Supply Current VDD – VC = 3.9 V, VC – VSS = 3.9 V, V– = 0 V 5.0 10.0 μA P Istandby Standby Current VDD – VC = 2.0 V, VC – VSS = 2.0 V 0.1 μA P

NO.EA-282-240322 Test Circuits1 (1) The typical performance characteristics (Part 1) are measured using the following test circuits. 電気的特性欄“ 注 ” の記号に対応する。A B C D F E H G OSCILLOSCOPE V V VDD VSS TIN COUT DOUT AOUT PS V VDD VC VSS COUTV- V VDD VC VSS TIN AOUT PS V VDD VC VSS COUTV- V VDD VC VSS TIN AOUT V- R6 PS V VDD VC VSS DOUTV- V VDD VC VSS DOUTV- V VDD VC VSS DOUTV- A (1)

NO.EA-282-240322 V VDD VC VSS COUTV- V VDD VC VSS COUT A I J K L V VDD VC VSS COUT A V VDD VC VSS DOUT A VDD VC VSS A V VDD VC VSS DOUT A M N O P V VDD VC VSS TIN AOUT A PS V VDD VC VSS TIN AOUT V- R6 PS

NO.EA-282-240322 OPERATION 1. VD1/ Over-charge Detector The VDET1x monitors the voltage between VDD pin and VC pin (Cell1) and the voltage between VC pin and VSS pin (Cell2), if either voltage becomes equal or more than the over-charge detector threshold (Typ. 4.240 V), the over-charge is detected, and an external charge control Nch MOSFET turns off with COUT pin being at "L" level. To reset the over-charge and make the C OUT pin level being "H" again, after detecting over-charge, in such conditions that a time when the both Cell1 and Cell2 are down to a level lower than the over-charge released voltage (Typ. 4.100 V), or when the both Cell1 and Cell2 are lower than the over -charge detector threshold, by connecting a kind of load to VDD after disconnecting a charger from the battery pack. Then, the output voltage of C OUT pin becomes "H", and it makes an external Nch MOSFET turn on, and charge cycle is available. Further, in case that the voltage level of Cell1 and Cell2 is equal or higher than the over -charge detector threshold, when a charger is removed and some load is connected, C OUT outputs “L”, however, load current can flow through the parasitic diode of the external charge control Nch MOSFET. After that, when the voltage level of Cell1 and Cell2 becomes lower than the over-charge detector threshold, COUT becomes “H”. Internal fixed output delay time (Typ. 1.0 s) for over-charge detection and released delay time (Typ. 16 ms) exist. Even when the voltage of Cell1 or Cell2 pin level becomes equal or higher level than V DET if the se voltages would be back to a level lower than the over-charge detector thr eshold within a time period of the output delay time, the over-charge is not detected. Besides, after detecting over-charge, while the voltage level of Cell1 and Cell2 is lower than the over-charge detector threshold, even if a charger is removed and a load is connected, if the voltage is recovered within output delay time (Typ. 16 ms) of release from over-charge, over- charge state is not released. A level shifter incorporated in a buffer driver for the C OUT pin makes the "L" level of C OUT pin to the V− pin voltage and the "H" level of COUT pin is set to VDD voltage with CMOS buffer. 2. VD2/ Over-discharge Detector The VDET2x monitors the voltage between VDD pin and VC pin (Cell1) and the voltage between VC pin and VSS pin (Cell2). When the either voltage becomes equal or less than the over -discharge detector threshold (Typ. 2.20 V), the over-discharge is detected and discharge stops by the external discharge control Nch MOSFET turning off with the DOUT pin being at "L" level. To reset the over-discharge detector, connecting a charger is the only method. When the charger is connected, if Cell1 or Cell2 is less than the over-discharge detector threshold, a charge current flows through the parasitic diode of the external MOSFET. Then, the voltages of Cell1 and Cell2 become higher than the over -discharge detector threshold, D OUT becomes “H” and the external MOSFET turns on and discharge will be possible. When a charger is connected, when the Cell1 and Cell2 voltages are more than the over -discharge detector threshold, the over-discharge is released and the voltage of the DOUT pin becomes “H” after the delay time. When either Cell1 or Cell2 voltage is equal or less than the maximum voltage for inhibition of charger (Vnochg),

NO.EA-282-240322 even if a charger is connected to the battery pack, COUT pin is stacked with "L" and the system is not allowable for charge. The output delay time for over -discharge detect is fixed internally (Typ. 128 ms). Even if the voltage of Cell1 or Cell2 is down to equal or lower than the over-discharge detector threshold, if the voltage of Cell1 or Cell2 would be back to a level higher than the over-discharge detector threshold within a time period of the output delay time, the over-discharge is not detected. Output delay time for release from over-discharge is also fixed internally (Typ. 1.2 ms). After detecting over-discharge, supply current would be reduced and be into standby by halting all the circuits and consumption current of the IC itself is made extremely low. (Max. 0.1 µA at VDD−VC = VC − VSS = 2.0 V) The output type of DOUT pin is CMOS having "H" level of VDD and "L" level of VSS. 3. VD3/ Discharge Overcurrent Detector, Short Circuit Protector When the charge and discharge is acceptable, these detectors monitor the V- pin voltage. If the V− pin voltage is up to a value equal or more than the discharge overcurrent detector threshold (Typ. 0.195 V) and lower than the short protection voltage Vshort (Typ. 1.0 V) the discharge overcurrent is detected. If the V− pin voltage becomes further higher than Vshor t, the short circuit protector is enabled. This leads the external discharge control Nch MOSFET turning off with the DOUT pin being at "L" level to prevent from flowing the large current into the circuit. An output delay time for the discharge overcurrent detector is internally fixed (Typ. 12 ms). A quick recovery of V − pin level from a value between Vshort and V DET3 within the delay time keeps the discharge control FET staying "H" state. Output delay time for the release from discharge overcurrent detection is also fixed internally (Typ. 1.2 ms). When the short circuit protector is enabled, the D OUT pin would be "L" and the delay time is also set (Typ. 300 µs). The V− pin has a built-in pull-down resistor to the VSS pin, that is, the resistance (Typ. 40 kΩ) to release from discharge overcurrent or short circuit. After an discharge overcurrent or short circuit protection is detected, removing a cause of discharge overcurrent or external short circuit makes an external discharge control FET an "ON" state automatically with the V− pin level being down to the VSS level through the built-in pulled down resistor. (When the V− pin voltage becomes equal or less than discharge overcurrent threshold, the detector is released.) The reset resistor of discharge overcurrent is off when the charge and discharge is acceptable, or normal state. Only when detecting discharge overcurrent or short circuit, the resistor is on. Output delay time of discharge overcurrent is set shorter than the delay time for over -discharge detector. Therefore, even if the voltage between VDD pin and VC pin (Cell1) or the voltage between VC pin and VSS pin (Cell2) becomes lower than VDET2 at the same time as the discharge overcurrent is detected, the R5464K is at discharge overcurrent detection mode. By disconnecting a load, V DET3 is automatically released from discharge overcurrent.

NO.EA-282-240322 4. VD4/ Charge Overcurrent Detector When the charge and discharge are acceptable, VDET4 senses the V− pin voltage. For example, in case that a battery pack is charged by an inappropriate charger, an excess current flows, then the voltage of V − pin becomes equal or less than charge overcurrent detector threshold (Typ. −0.11 V). Then, the output of C OUT becomes "L", and prevents from flowing excess current in the circuit by turning off the external Nch MOSFET. Output delay of charge overcurrent is internally fixed. (Typ. 8 ms) Even the voltage level of V − pin becomes equal or lower than the charge overcurrent detector threshold, the voltage is higher than the V DET4 threshold within the delay time, the charge overcurrent is not detected. Output delay for the release from charge overcurrent is also set. (Typ. 1.2 ms) VDET4 can be released with disconnecting a charger and connecting a load. 5. DS (Delay Shortening) function Output delay time of over-charge and over-discharge can be made shorter than those setting values by forcing equal or lower than the test shortening mode voltage (Typ. −1.6 V) to V− pin. 6. Alarm Detector Circuit When the detected temperature by an external thermistor is less than 45°C , the alarm detector monitors the voltage between VDD pin and VC pin (Cell1) and the voltage between VC pin and VSS pin (Cell2), if either of them becomes over-charge alarm detector threshold (Typ. 4.215 V), then state becomes alarm, and the AOUT pin outputs from high impedance at normal to "H". After detecting the over-charge alarm, if the detected temperature of an external thermistor is less than 45 °C, when both voltages of cell1 and cell2 become equal or less than the released voltage from over-charge alarm (Typ. 4.165 V), the alarm state is released and the output of AOUT pin changes from "H" state to high impedance. When the detected temperature by an external thermistor is equal or more than 45°C , while the battery is charged, the voltage between VDD pin and VC pin (Cell1) and the voltage between VC pin and VSS pin (Cell2) are monitored, and either of them becomes equal or more than the over -charge alarm detector threshold at high temperature (Typ. 4.090 V), the alarm state is acknowledged, the output of AOUT pin changes from high impedance at normal state to "H". After detecting over-charge alarm, if the detected temperature by an external thermistor is equal or more than 45°C, when both voltages of cell1 and cell2 become equal or less than the released voltage from over-charge alarm at high temperature (Typ. 4.040 V), then the alarm state is released and the output of AOUT pin changes from the "H" to high impedance. The output delay time for the over -charge alarm detect and the release from over -charge alarm exists respectively. The delay time for the over -charge alarm detect is typically 6 ms, and the released output delay time from over-charge alarm is typically 1.9 ms. Even if either of the voltage of cell1 or cell2 becomes equal or more than the over -charge alarm detector threshold, if the voltage recovers within the delay time for over - charge alarm detector, over -charge alarm is not detected. After detecting over -charge alarm, eve n if both voltages of cell1 and cell2 are less than the over -charge alarm detector, the charger is disconnected and

NO.EA-282-240322 connect a load, if the state recovers within the output delay time for release from alarm detector, the over - charge alarm state is not released. The alarm detector circuits, VD1, VD2, VD3, and VD4 operate individually. When the IC is into standby mode, the alarm detectors also stop. The output type of AOUT pin is Pch open-drain type, and the source is connected to VDD. アラーム検出電圧(常温) アラーム検出電圧(高温) 高温検出温度 "H"レベル ハイインピーダンス状態 周囲温度 電池電圧 アラーム検出電圧(常温) アラーム検出電圧(高温) 高温検出温度 "H"レベル ハイインピーダンス状態 中間レベル 周囲温度 電池電圧 Alarm Detection Voltage (Normal Temp.) Alarm Detection Voltage (High Temp.) “H” Level High Impedance State “H” Level High Impedance State Intermediate Level Alarm Detection Voltage (Normal Temp.) Alarm Detection Voltage (High Temp.) High Temp. Detection Temp. High Temp. Detection Temp. G Version Battery Voltage D Version Battery Voltage Ambient Temp. Ambient Temp.

NO.EA-282-240322 Timing Chart 1. Charge Operation and Charge Overcurrent Operation REL1U C V DET1U C OUT V DD DET3 V SS DET4 Connect Charger Connect Load Disconnect Charger + Connect Load t t Charge/ Discharge Current Charge Current t t V DD V - V C V SS - t V DET1L V REL1L Excess Charge Current t V DET 1 t REL1 t V REL1 t V DET4 t V REL4 V V DD V V V DET 1 V t Discharge Current

NO.EA-282-240322 2. Overdischarge Operation, Discharge Overcurrent Operation and Short-circuit Operation V DET2U D OUT V DD V DD V DET3 SS DET4 t Charge/ Discharge current Charge Current t DD V C - VC SS V DET2L short Connect Load DET2 Connect Charger t REL2 Connect Load t DET2 Connect Charger Over-discharge Current t DET3 Open Short t REL3 t REL2 tshort Open t REL3 V - V V V V V V SS t V V V V V V V t t t Discharge Current

NO.EA-282-240322 3. Overcharge Alarm Operation AD/ DD Version VALMU VALMUH AOUT VDD OPEN Ambient Temperature Temp 45℃ ｔ ｔ Charge/ Discharge Current Charge Current Discharge Current ｔ ｔ VDD-VC ｔ VALML VALMLH VC-VSS VRALU VRALUH VRALL VRALLH tVALM tVRAL tVALM tVALM tVRAL tVALM tVRAL tVALM tVRAL Connect Charger Disconnect Ch

NO.EA-282-240322 CG Version VALMU VALMUH AOUT VDD OPEN 環境温度 Temp 45℃ ｔ ｔ 充放電電流 充電電流 放電電流 ｔ ｔ VDD-VC ｔ VALML VALMLH VC-VSS VRALU VRALUH VRALL VRALLH TRAH1 tVALM tVRAL tVALM tVALM tVRAL tVALM tVRAL tVALM tVRAL 充電器接続 充電器オープン tVRAL Connect Charger Disconnect Charger Ambient Temperature Discharge Current Charge/ Discharge Current Charge Current Ambient Temp. 45°C TRAH1

NO.EA-282-240322

APPLICATION INFORMATION

Typical Application Circuit VDD COUT DOUT VSS 1k Ω R5464K VC 330Ω 0.1μF 0.1μF AOUT TIN RIN 150kΩ 470kΩ Charger Side 510kΩ Pack Side PS Typical Application Circuit Technical Notes on Selection Components

  • R1, R2, C1 and C2 stabilize a supply voltage to the R5464xxxxxx. A recommended R1, R2 value is less than 1 kΩ . A larger value of R1 and R2 makes the detection voltage shift higher because of some conduction current in the R5464xxxxxx. To stabilize the operation, the value of C1 and C2 should be equal or more than 0.01 µF.
  • R1 and R3 can operate also as parts for current limit circuit against reverse charge or applying a charger with excess charging voltage beyond the absolute maximum rating of the R5464xxxxxx, to the battery pack. Small value of R1 and R 3 may cause over -power consumption rating of power dissipation of the R5464xxxxx. Thus, the total value of 'R1+R3' should be equal or more than 1 kΩ. If a large value of R3 is set, after detecting overdischarge, the release by connecting a charger may not be possible. Therefore, recommendation value of R3 is equal or less than 3 kΩ.
  • The position of a thermistor, T1 depends on the correlation of cell voltage. Therefore, confirm the correlation fully, and decide the position of a thermistor, and setting temperature detect.
  • The tolerance of T1 and R4 effects on the tolerance of the temperature detector, therefore, consider the tolerance of these external components.
  • The typical application circuit diagram is just an example. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary.
  • Overvoltage and the over current beyond the absolute maximum rating should not be forced to the protection IC and external components.

NO.EA-282-240322 Part 3: VDD Dependence of Supply Current Test Circuit VDD COUT DOUT VSS 1k Ω R5464K VC 330Ω 0.1μF 0.1μF AOUT TIN RIN 150kΩ 470kΩ A CELL1 CELL2 PS 330Ω D Version G Version VDD Dependency of Supply Current VDD Dependency of Supply Current R5464x205AD R5464x102CG

NO.EA-282-240322 Part 4: External Resistance (R1) Dependence of Overcharge Alarm Detection/ Restoration Voltage, Overcharge Detection/ Restoration Voltage, Overdischarge Detection/ Restoration Voltage Test Circuit VDD COUT DOUT VSS R5464K 1kΩ VC 330Ω 0.1μF AOUT TIN RIN 150kΩ 470kΩ 510kΩ CELL1 CELL2 330Ω PS C1 0.1μF D Version G Version Overcharge Alarm Detection/ Restoration Voltage vs. R1 (CELL1) Overcharge Alarm Detection/ Restoration Voltage vs. R1 (CELL1) R5464x205AD R5464x102CG

NO.EA-282-240322 D Version G Version Overcharge Detection/ Restoration Voltage vs. R1 (CELL1) Overcharge Detection/ Restoration Voltage vs. R1 (CELL1) R5464x205AD R5464x102CG D Version G Version Overdischarge Detection Voltage vs. R1 (CELL1) Overdischarge Detection Voltage vs. R1 (CELL1) R5464x205AD R5464x102CG

NO.EA-282-240322 Part 5: External Resistance (R6) Dependence of Over-charge Alarm Detection/ Restoration Voltage Test Circuit VDD COUT DOUT VSS 1k Ω R5464K 330Ω VC 330Ω 0.1μF 0.1μF AOUT TIN RIN 150kΩ 470kΩ CELL1 CELL2 330Ω PS D Version G Version Over-charge Alarm Detection/ Restoration Voltage vs. R6 (CELL1) Over-charge Alarm Detection/ Restoration Voltage vs. R6 (CELL1) R5464x205AD R5464x102CG

NO.EA-282-240322 Part 6: External Resistance (R3) Dependence of Charger Voltage at Recovery from Over-discharge Test Circuit VDD COUT DOUT VSS R5464K 330Ω VC 330Ω 0.1μF 0.1μF AOUT TIN RIN 150kΩ 470kΩ CELL1 CELL2 330Ω PS D Version G Version Charger Voltage at Recovery from Over-discharge vs. R3 Charger Voltage at Recovery from Over-discharge vs. R3 R5464x205AD R5464x102CG

NO.EA-282-240322 TECHNICAL NOTES A peripheral component or the device mounted on PCB should not exceed a rated voltage, a rated current or a rated power. When designing a peripheral circuit, please be fully aware of the following points.

  • Please evaluate the product at the PCB level before use, as some symptoms may remain that cannot be confirmed by the evaluation at the IC level.
  • When using any coating or underfill to improve moisture resistance or joining strength, evaluate them adequately before using. In certain materials or coating conditions, corrosion by contained constituents, current leakage by moisture absorption, crack and delamination by physical stress can happen. If the curing temperature of the coating material or underfill material exceeds the absolute maximum rating, the electrical characteristics of this product may change.
  • When performing X -ray inspection in mass production process and evaluation build stage such as the product functions and characteristics confirmation, please confirm X-ray irradiation does not exceed 1.5Gy (absorbed dose for air).

POWER DISSIPATION DFN(PL)2527-10 PD-DFN(PL)2527-10-(85125)-JE-A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 30 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 2800 mW Thermal Resistance (θja) θja = 35°C/W Thermal Characterization Parameter (ψjt) ψjt = 10°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 500 1000 1500 2000 2500 3000 3500 0 25 50 75 100 125 Power Dissipation PD (mW) Ambient Temperature (°C) 2800

PACKAGE DIMENSIONS DFN(PL)2527-10 DM-DFN(PL)2527-10-JE-C i DFN(PL)2527-10 Package Dimensions (mm)

Ver. A i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5464K [DFN(PL)2527-10] Part Marking NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our s ales or distributor before attempting to use AOI. R5464Kxxxxx Part Marking List Product Name ①②③④ R5464K201AD DR00 R5464K102CG DR01 R5464K204AD DR02 R5464K205AD DR03 R5464K203AD DR04 R5464K206AD DR05 R5464K207AD DR06 R5464K208AD DR07 R5464K109CG DR08 R5464K110CG DR09 R5464K213AD DR10 R5464K212DD DR11 R5464K214AD DR12 R5464K215AD DR13 R5464K216AD DR14 10 9 8 7 6 ④ ⑤ ⑥ ① ② ③ 1 2 3 4 5

  1. T he products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.
  • Aerospace Equipment
  • Equipment Used in the Deep Sea
  • Power Generator Control Equipment (nuclear, steam, hydraulic, etc.)
  • Life Maintenance Medical Equipment
  • Fire Alarms / Intruder Detectors
  • Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.)
  • Various Safety Devices
  • Traffic control system
  • Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/