R5460X2XXXX NISSHINBO | Alldatasheet

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Li-ION/POLYMER 2-CELL PROTECTOR NO.EA-165-250616 OUTLINE The R5460x2xxxx Series are high voltage CMOS-based protection ICs for over-charge/discharge of rechargeable two-cell Lithium -ion (Li+) / Lithium polymer, further include a short circuit protection circuit for preventing large external short circuit current and the protection circuits against the excess discharge- current and excess charge current. Each of these ICs is composed of six voltage detectors, a reference unit, a delay circuit, a short circuit protector, an oscillator, a counter, and a logic circuit. When the over -charge voltage threshold or excess -charge current threshold crosses the each detector threshold from a low value to a high value, the output of COUT pin switches to “L” level after internal fixed delay time. To release over-charge detector after detecting over-charge, the detector can be reset and the output of COUT becomes "H" when a kind of load is connected to VDD after a charger is disconnected from the battery pack and the cell voltage becomes lower than over -charge detector threshold. In case that a charger is continuously connected to the battery pack, if the cell voltage becomes lower than the over- charge released voltage, over-charge state is also released. The output of DOUT pin, the output of the over -discharge detector and the excess discharge- current detector, switches to “L” level after internally fixed delay time, when discharged voltage crosses the detector threshold from a high value to a value lower than VDET2. The conditions to release over-discharge voltage detector after detecting over-discharge voltage are as follows: A/D versions: after connecting a charger, when the cell voltage becomes higher than over -discharge detector threshold or, without connecting charger, when the cell voltage becomes equal or higher than over -discharge released voltage. C version: after connecting a charger, when the cell voltage becomes higher than over-discharge detector threshold voltage. E version: whether connecting a charger, or not, when the cell voltage becomes higher than released voltage from over-discharge. F version: after connecting a charger, when the cell voltage becomes higher than released voltage from over - discharge. In case that connecting a charger, for A/C/D versions, there is no hysteresis for over -discharge detector. E/F versions, even if a charger is connected to the battery pack, the hysteresis of over -discharge detector exists. To satisfy the release conditions for over-discharge voltage protector, the output voltage of DOUT becomes "H". Even if a battery is discharged to 0V, charge current is acceptable. After detecting excess -discharge current or short current, when the load is disconnected, the excess discharged or short condition is released and DOUT becomes “H”. After detecting over -discharge voltage, supply current will be kept extremely low by halting internal circuits' operation. When the output of COUT is “H”, if V - pin level is set at -1.6V, the delay time of over -charge and over-discharge detector can be shortened. Especially , the delay time of the over -charge detector can be reduced into approximately 1/60 and test time for protection circuit PCB can be reduced. The output type of COUT and DOUT is CMOS.

NO.EA-165-250616

FEATURES

  • Manufactured with High Voltage Tolerant ProcessAbsolute Maximum Rating 30V Standby current Typ. 1.2µA (A/ D/ E version) Max. 0.1µA (C/ F version) (Ta=-5 to 55°C) ±30mV Over-discharge detector ±2.5% Excess discharge-current detector ±15mV Excess charge-current detector ±40mV
  • Variety of detector threshold Over-charge detector threshold (A/C/E/F version) 4.1V-4.5V step of 0.005V (VD1U/VD1L) Over-charge detector threshold (D version) 3.5V-4.0V step of 0.005V (VD1U/VD1L) Over-discharge detector threshold 2.0V-3.0V step of 0.005V (VD2U/VD2L) Excess discharge-current threshold 0.05V -0.20V step of 0.005V 3 options of Excess charge-current threshold (1) -0.4V ±40mV (2) -0.2V ±30mV (3) -0.1V ±30mV Over-charge released voltage 0.1V -0.4V step of 0.05V (VH1U/VH1L) Over-discharge released voltage 0.2V -0.7V step of 0.1V (VH2U/VH2L) Over-discharge detector Output Delay 128ms Excess discharge-current detector Output Delay 12ms Excess charge-current detector Output Delay 8ms Short Circuit detector Output Delay 300µs of detect the over -charge and over -discharge can be reduced. (Delay Time for over -charge becomes about 1/60 of normal state.)

APPLICATIONS

  • Li+ / Li Polymer protector of over-charge, over-discharge, excess-current for battery pack
  • High precision protectors for cell-phones and any other gadgets using on board Li+ / Li Polymer battery

NO.EA-165-250616 BLOCK DIAGRAMS A/D/E/F version C version VD1U VD3 Counter DOUT COUT V- VSS DS Circuit Ｏscillator Short Detector Logic Circuit Level Shift Logic Circuit Delay VD2L Vc VD2U VD1L VD4 VDD VD1U VD3 Counter DOUT COUT V- VSS DS Circuit Ｏscillator Short Detector Logic Circuit Level Shift Logic Circuit Delay VD2L Vc VD2U VD1L VD4 VDD

NO.EA-165-250616 SELECTION GUIDE In the R5460x 2xxxx Series, input threshold of over -charge, over -discharge, excess discharge current, and the package and taping can be designated. Part Number is designated as follows: R5460x2xxx x-xx ←Part Number a b c d e Code Contents a Package Type N: SOT -23-6 K: DFN(PL)1820-6 b Serial Number for the R5460 Series designating input threshold for over-charge, over- discharge, excess discharge-current detectors. c Designation of Output delay option of over-charge and excess discharge-current. d Designation of version symbols. e Taping Type: TR (refer to Taping Specification) PIN CONFIGURATIONS SOT-23-6 DFN(PL)1820-6 mark side 1 2 3 6 5 4 6 4 1 2 3 mark side Pin Description Pin No. Symbol Description SOT-23-6 DFN(PL)1820-6 1 3 DOUT Output pin of over-discharge detection, CMOS output 2 1 COUT Output pin of over-charge detection, CMOS output 3 2 V- Charger negative Input Pin 4 6 VC Input Pin of the center voltage between two-cell 5 5 VDD Power supply pin, the substrate voltage level of the IC. 6 4 VSS VSS pin. Ground pin for the IC The backside tab of DFN(PL) 1820-6 package is connected to the substrate level. (VDD) Note that avoiding short with other level.

NO.EA-165-250616 ABSOLUTE MAXIMUM RATINGS Ta=25°C, Vss=0V Item Symbol Ratings Unit Supply Voltage VDD -0.3 to 12 V Input Voltage Middle pin Voltage between 2-cell V- pin Voltage Vc Vss-0.3 to VDD+0.3 VDD-30 to VDD+0.3 V V Output Voltage C OUT pin Voltage D OUT pin Voltage VCOUT VDOUT VDD-30 to VDD+0.3 Vss-0.3 to VDD+0.3 V V Power Dissipation PD 150 mW Operating Temperature Ta -40 to 85 °C Storage Temperature Tstg -55 to 125 °C *Note: Exposure to the condition exceeded Absolute Maximum Ratings may cause permanent damage and affects the reliability and safety of both device and systems using the device. The functional operations cannot be guaranteed beyond specified values in the recommended conditions.

NO.EA-165-250616

ELECTRICAL CHARACTERISTICS

R5460x2xxAA/AD/AE version , Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 1.5 10.0 V Vst Minimum operating Voltage for 0V charging Voltage defined as VDD - V-, VDD-VSS=0V 1.8 V VDET1U CELL1 Over-charge threshold Detect rising edge of supply voltage R1 = 330Ω R1 = 330Ω (Ta = -5 to 55°C)*Note VDET1U-0.025 VDET1U-0.030 VDET1U VDET1U VDET1U+0.025 VDET1U+0.030 V V VREL1U CELL1 Over-charge released voltage R1 = 330Ω VREL1U-0.05 VREL1U VREL1U+0.05 V tVREL1 Output delay of release from over-charge VDD = 4.5V to 3.2V, VC - VSS = 3.2V 11 16 21 ms VDET1L CELL2 Over-charge detector threshold Detect rising edge of supply voltage R2 = 330Ω R2 = 330Ω (Ta = -5 to 55°C)*Note VDET1L-0.025 VDET1L-0.030 VDET1L VDET1L VDET1L+0.025 VDET1L+0.030 V V VREL1L CELL2 Over-charge released voltage R2 = 330Ω VREL1L-0.05 VREL1L VREL1L+0.05 V VDET2U CELL1 Over-discharge threshold Detect falling edge of supply voltage VDET2U×0.975 VDET2U VDET2U×1.025 V VREL2U CELL1 Released Voltage from Over-discharge Detect rising edge of supply voltage VREL2U×0.975 VREL2U VREL2U×1.025 V tVDET2 Output delay of over-discharge VDD – VC = 3.2V to 1.9V VC-VSS = 3.2V 89 128 167 ms tVREL2 Output delay of release from over- discharge VDD – VC = 1.9V to 3.2V, VC - VSS = 3.2V 0.7 1.2 1.7 ms VDET2L CELL2 Over-discharge threshold Detect falling edge of supply voltage VDET2L×0.975 VDET2L VDET2L×1.025 V VREL2L CELL2 Released Voltage from Over-discharge Detect rising edge of supply voltage VREL2L×0.975 VREL2L VREL2L×1.025 V VDET3 Excess discharge-current threshold Detect rising edge of 'V-' pin voltage VDET3-0.015 VDET3 VDET3+0.015 V tVDET3 Output delay of excess discharge current VDD – VC = VC – VSS = 3.2V, V- = 0V to 0.5V 8 12 16 ms tVREL3 Output delay of release from excess discharge-current VDD – VC = VC – VSS = 3.2V, V- = 3V to 0V 0.7 1.2 1.7 ms VDET4 Excess charge-current threshold Detect falling edge of 'V-' pin voltage -0.44 -0.40 -0.36 -0.13 -0.10 -0.07 tVDET4 Output delay of excess charge- current VDD – VC = VC - VSS = 3.2V, V- = 0V to -1V 5 8 11 ms tVREL4 Output delay of release from excess charge-current VDD – VC = VC – VSS = 3.2V, V- = -1V to 0V 0.7 1.2 1.7 ms Vshort Short protection voltage VDD – VC = VC – VSS = 3.2V 0.7 1.1 1.5 V tshort Output Delay of Short protection VDD – VC = VC – VSS = 3.2V, V- = 0V to 6.4V 150 300 500 µs Rshort Reset resistance for Excess discharge-current protection VDD – VC = VC – VSS = 3.2V, V- = 1V 25 40 75 kΩ VDS Delay Shortening Mode input voltage VDD – VC = VC – VSS = 4.0V -2.2 -1.6 -1.0 V VOL1 Nch ON voltage of COUT IOL=50µA, VDD – VC = VC-VSS=4.5V 0.4 0.5 V VOH1 Pch ON voltage of COUT IOH = -50µA,VDD-VC = VC-VSS = 3.2V 6.8 7.4 V VOL2 Nch ON voltage of DOUT IOL = 50µA, VDD-VC = VC-VSS = 1.9V 0.2 0.5 V VOH2 Pch ON voltage of DOUT IOH = -50µA, VDD-VC = VC-VSS = 3.2V 6.8 7.4 V IDD Supply current VDD - VC = VC - VSS = 3.2V, V- = 0V 4.0 8.0 µA ISS Standby current VDD - VC = VC - VSS = 1.9V 1.2 2.0 µA *Note: We compensate for this characteristic related to temperature by laser -trim, however, this specification is guaranteed by design, not production tested.

NO.EA-165-250616 R5460x2xxAC version Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 1.50 10.0 V Vst Minimum operating Voltage for 0V charging Voltage defined as VDD-V- VDD-VSS = 0V 1.8 V VDET1U CELL1 Over-charge threshold Detect rising edge of supply voltage R1 = 330Ω R1 = 330Ω (Ta = -5 to 55°C)*Note VDET1U-0.025 VDET1U-0.030 VDET1U VDET1U VDET1U+0.025 VDET1U+0.030 V V VREL1U CELL1 Over-charge released voltage R1 = 330Ω VREL1U-0.05 VREL1U VREL1U+0.05 V tVREL1 Output delay of release from over- charge VDD=4.5V to 3.2V, VC-VSS=3.2V 11 16 21 ms VDET1L CELL2 Over-charge detector threshold Detect rising edge of supply voltage R2 = 330Ω R2 = 330Ω (Ta = -5 to 5°C)*Note VDET1L-0.025 VDET1L-0.030 VDET1L VDET1L VDET1L+0.025 VDET1L+0.030 V V VREL1L CELL2 Over-charge released voltage R2 = 330Ω VREL1L-0.050 VREL1L VREL1L+0.050 V VDET2U CELL1 Over-discharge threshold Detect falling edge of supply voltage VDET2U×0.975 VDET2U VDET2U×1.025 V tVDET2 Output delay of over-discharge VDD-VC = 3.2V to 1.9V VC-VSS = 3.2V 89 128 167 ms tVREL2 Output delay of release from over- VDET2L CELL2 Over-discharge threshold Detect falling edge of supply voltage VDET2L×0.975 VDET2L VDET2L×1.025 V VDET3 Excess discharge-current threshold Detect rising edge of 'V-' pin voltage VDET3-0.015 VDET3 VDET3+0.015 V tVDET3 Output delay of excess discharge current VDD-VC = VC – VSS = 3.2V, V- = 0V to 0.5V 8 12 16 ms tVREL3 Output delay of release from excess discharge-current VDD – VC = VC – VSS = 3.2V, V- = 3V to 0V 0.7 1.2 1.7 ms VDET4 Excess charge-current threshold Detect falling edge of 'V-' pin voltage -0.44 -0.40 -0.36 -0.13 -0.10 -0.07 tVDET4 Output delay of excess charge- current VDD – VC = VC – VSS = 3.2V, V-= 0V to -1V 5 8 11 ms tVREL4 Output delay of release from excess charge-current VDD – VC = VC – VSS = 3.2V, V- = -1V to 0V 0.7 1.2 1.7 ms Vshort Short protection voltage VDD – VC = VC – VSS = 3.2V 0.7 1.1 1.5 V tshort Output Delay of Short protection VDD – VC = VC – VSS = 3.2V, V- = 0V to 6.4V 150 300 500 µs Rshort Reset resistance for Excess discharge-current protection VDD - VCC = VC – VSS = 3.2V, V- = 1V 25 40 75 kΩ VDS Delay Shortening Mode input voltage VDD – VC = VC – VSS = 4.0V -2.2 -1.6 -1.0 V VOL1 Nch ON voltage of COUT IOL = 50µA, VDD - VC = VC-VSS = 4.5V 0.4 0.5 V VOH1 Pch ON voltage of COUT IOH= -50µA, VDD–VC= VC -VSS =3.2V 6.8 7.4 V VOL2 Nch ON voltage of DOUT IOL = 50µA, VDD-VC = VC-VSS = 1.9V 0.2 0.5 V VOH2 Pch ON voltage of DOUT IOH = -50µA, VDD-VC = VC-VSS = 3.2V 6.8 7.4 V IDD Supply current VDD – VC = VC-VSS = 3.2V, V- = 0V 4.0 8.0 µA IS Standby current VDD – VC = VC – VSS = 1.9V 0.1 µA *Note: We compensate for this characteristic related to temperature by laser-trim, however, this specification is guaranteed by design, not production tested.

NO.EA-165-250616 R5460x2xxAF version Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 1.5 10.0 V Vst Minimum operating Voltage for 0V charging Voltage defined as VDD-V- VDD-VSS = 0V 1.8 V VDET1U CELL1 Over-charge threshold Detect rising edge of supply voltage R1 = 330Ω R1 = 330Ω (Ta = -5 to 55°C)*Note VDET1U-0.025 VDET1U-0.030 VDET1U VDET1U VDET1U+0.025V ET1U+0.030 V V VREL1U CELL1 Over-charge released voltage R1 = 330Ω VREL1U-0.05 VREL1U VREL1U+0.05 V tVREL1 Output delay of release from over-charge VDD = 4.5V to 3.2V, VC-VSS = 3.2V 11 16 21 ms VDET1L CELL2 Over-charge detector threshold Detect rising edge of supply voltage R2 = 330Ω R2 = 330Ω (Ta = -5 to 55°C)*Note VDET1L-0.025 VDET1L-0.030 VDET1L VDET1L VDET1L+0.025 VDET1L+0.030 V V VREL1L CELL2 Over-charge released voltage R2 = 330Ω VREL1L-0.050 VREL1L VREL1L+0.050 V VDET2U CELL1 Over-discharge threshold Detect falling edge of supply voltage VDET2U×0.975 VDET2U VDET2U×1.025 V VREL2U CELL1 Released Voltage from Over-discharge Detect rising edge of supply voltage VREL2U×0.975 VREL2U VREL2U×1.025 V tVDET2 Output delay of over-discharge VDD-VC= 3.2V to 1.9V VC-VSS = 3.2V 89 128 167 ms tVREL2 Output delay of release from over-discharge VDD-VC = 1.9V to 3.2V VC-VSS = 3.2V 0.7 1.2 1.7 ms VDET2L CELL2 Over-discharge threshold Detect falling edge of supply voltage VDET2L×0.975 VDET2L VDET2L×1.025 V VREL2L CELL2 Released Voltage from Over-discharge Detect rising edge of supply voltage VREL2L×0.975 VREL2L VREL2L×1.025 V VDET3 Excess discharge-current threshold Detect rising edge of 'V-' pin voltage VDET3-0.015 VDET3 VDET3+0.015 V tVDET3 Output delay of excess discharge current VDD-VC = VC-VSS = 3.2V, V- = 0V to 0.5V 8 12 16 ms tVREL3 Output delay of release from excess discharge-current VDD-VC = VC-VSS = 3.2V, V- = 3V to 0V 0.7 1.2 1.7 ms VDET4 Excess charge-current threshold Detect falling edge of 'V-' pin voltage -0.44 -0.40 -0.36 -0.13 -0.10 -0.07 tVDET4 Output delay of excess charge- current VDD-VC = VC-VSS = 3.2V, V- = 0V to -1V 5 8 11 ms tVREL4 Output delay of release from excess charge-current V DD-VC = VC-VSS = 3.2V, V- = -1V to 0V 0.7 1.2 1.7 ms Vshort Short protection voltage VDD-VC = VC-VSS = 3.2V 0.7 1.1 1.5 V tshort Output Delay of Short protection VDD-VC = VC-VSS = 3.2V, V- = 0V to 6.4VV 150 300 500 µs Rshort Reset resistance for Excess discharge-current protection VDD-VC = VC-VSS = 3.2V, V- = 1V 25 40 75 kΩ VDS Delay Shortening Mode input voltage VDD-VC = VC-VSS = 4.0V -2.2 -1.6 -1.0 V VOL1 Nch ON voltage of COUT IOL = 50µA VDD-VC = VC-VSS = 4.5V 0.4 0.5 V VOH1 Pch ON voltage of COUT IOH = -50µA VDD-VC = VC-VSS = 3.2V 6.8 7.4 V VOL2 Nch ON voltage of DOUT IOL = 50µA VDD-VC = VC-VSS = 1.9V 0.2 0.5 V VOH2 Pch ON voltage of DOUT IOH = -50µA,VDD–VC = VC–VSS = 3.2V 6.8 7.4 V IDD Supply current VDD – VC = VC – VSS = 3.2V V- = 0V 4.0 8.0 µA IS Standby current VDD – VC = VC – VSS = 1.9V 0.1 µA *Note: We compensate for this characteristic related to temperature by laser-trim, however, this specification is guaranteed by design, not production tested.

NO.EA-165-250616 OPERATION  VDET1U, VDET1L / Over-Charge Detectors The VDET1U and VDET1L monitor the voltage between V DD pin and VC pin (the voltage of Cell1) and the voltage between V C pin and VSS pin (the voltage of Cell2), if either voltage becomes equal or more than the over -charge detector threshold, the over - charge is detected, and an external charge control Nch MOSFET turns off with COUT pin being at "L" level. VDET1U is the detector of Cell1, and the VDET1L is the detector of Cell2. To reset the over-charge and make the C OUT pin level to "H" again after detecting over -charge, in such conditions that a time when the both Cell1 and Cell2 are down to a level lower than over -charge voltage, by connecting a kind of load to V DD after disconnecting a charger from the battery pack. Then, the output voltage of COUT pin becomes "H" and it makes an external Nch MOSFET turn on, and charge cycle is available. In case of the charger is continuously connected and over-charge is detected, both battery voltages of Cell1 and Cell2 become lower than the released voltage from over-charge, charge becomes possible. Therefore there is a specific hysteresis for over-charge detectors. To judge whether or not load is connected, the built-in excess- discharge current detector is used. By connecting some l oad, V- pin voltage becomes equal or more than excess -discharge current detector threshold, and reset the over-charge detecting state. Further, either or both voltage of Cell1 and Cell2 is higher than the over-charge detector threshold, if a charger is removed and some load is connected, C OUT outputs “L”, however, load current can flow through the parasitic diode of the external charge control Nch MOSFET. After that, when both voltages of Cell1 and Cell2 become lower than the over-charge detector threshold, COUT becomes “H”. Internal fixed output delay times for over-charge detection and release from over-charge exist. If either or both of the voltage of Cell1 or Cell2 keeps its level more than the over-charge detector threshold, and output delay time passes, over-charge voltage is detected. Even when the voltage of Cell1 or Cell2 pin level becomes equal or higher level than VDET1 if these voltages would be back to a level lower than the over -charge detector threshold within a time period of the output delay time, t he over-charge is not detected. Besides, after detecting over-charge, while the both of Cell1 and Cell2 voltages are lower than the over-charge detector threshold, even if a charger is removed and a load is connected, if the voltage is recovered within output delay time of release from over-charge, over-charge state is not released. A level shifter incorporated in a buffer driver for the C OUT pin makes the "L" level of C OUT pin to the V - pin voltage and the "H" level of COUT pin is set to VDD voltage with CMOS buffer. VDET2U, VDET2L / Over-Discharge Detectors The VDET2U and VDET2L monitor the voltage between VDD pin and VC pin (Cell1 voltage) and the voltage between VC pin and VSS pin (Cell2 voltage). When either of the cell1 or cell2 voltage becomes equal or less than the over-discharge detector threshold, the over-discharge is detected and discharge stops by the external discharge control Nch MOSFET turning off with the DOUT pin being at "L" level. The conditions to release over-discharge voltage detector after detecting over-discharge voltage are as follows: A/D versions: after connecting a charger, when the cell voltage becomes higher than over -discharge detector threshold or, without connecting charger, when the cell voltage becomes equal or higher than over-discharge released voltage. C version: after connecting a charger, when the cell voltage becomes higher than over-discharge detector threshold voltage. E version: whether connecting a charger, or not, when the cell voltage becomes higher than released voltage from over - discharge. F version: after connecting a charger, when the cell voltage becomes higher than released voltage from over-discharge. In case that connecting a charger, for A/C/D versions, there is no hysteresis for over-discharge detector. For E/F versions, even if a charger is connected to the battery pack, the hysteresis of over-discharge detector exists. When a cell voltage equals to zero, if the voltage of a charger is equal or more than 0V-charge minimum voltage (Vst), C OUT pin becomes "H" and a system is allowable to charge. The output delay time for over -discharge detect is fixed internally. Even if either voltage of Cell1 or Cell2 is down to equal or lower than the over-discharge detector threshold, if the both voltages of Cell1 or Cell2 would be back to a level higher than the over-discharge detector threshold within a time period of the output delay time, the over-discharge is not detected. Output delay time for release from over-discharge is also set. After detecting over -discharge, supply current would be reduced and be into standby by halting unnecessary circuits and consumption current of the IC itself is made as small as possible.

NO.EA-165-250616 C/F version: after detecting over-discharge, all the circuits are halted and the R5460 will be into standby mode. Others: after detecting over-discharge, whole circuits except over-discharge released detector function are halted, and the R5460 will be into standby mode. The output type of DOUT pin is CMOS having "H" level of VDD and "L" level of VSS. VDET3 /Excess discharge-current Detector, Short Circuit Protector Both of the excess current detector and short circuit protection can work when both of control FETs are in "ON" state. When the V- pin voltage is up to a value between the short protection voltage (Vshort) and excess discharge-current threshold VDET3, VDET3 operates and further soaring of V - pin voltage higher than Vshort makes the short circuit protector enabled. This leads the external discharge control Nch MOSFET turns off with the DOUT pin being at "L" level. An output delay time for the excess discharge-current detector is internally fixed. A quick recovery of V- pin level from a value between Vshort and V DET3 within the delay time keeps the discharge control FET staying "H" state. Output delay time for Release from excess discharge-current detection is also set. When the short circuit protector is enabled, the DOUT would be "L" and the delay time is also set. The V- pin has a built-in pull-down resistor to the VSS pin, that is, the resistance to release from excess-discharge current. After an excess discharge- current or short circuit protection is detected, removing a cause of excess discharge- current or external short circuit makes an external discharge control FET to an "ON" state automatically with the V - pin level being down to the VSS level through the built -in pulled down resistor. The reset resistor of excess discharge- current is off at normal state. Only when detecting excess discharge-current or short circuit, the resistor is on. Output delay time of excess discharge- current is set shorter than the delay time for over -discharge detector. Therefore, if VDD voltage would be lower than V DET2 at the same time as the excess discharge-current is detected, the R5460x is at excess discharge-current detection mode. By disconnecting a load, VDET3 is automatically released from excess discharge-current. V DET4/ Excess charge-current detector When the battery pack is chargeable and discharge is also possible, V DET4 senses V- pin voltage. For example, in case that a battery pack is charged by an inappropriate charger, an excess current flows, then the voltage of V- pin becomes equal or less than excess charge-current detector threshold. Then, the output of COUT becomes "L", and prevents from flowing excess current in the circuit by turning off the external Nch MOSFET. Output delay of excess charge current is internally fixed. Even the voltage level of V - pin becomes equal or lower than the excess charge-current detector threshold, the voltage is higher than the VDET4 threshold within the delay time, the excess charge current is not detected. Output delay for the release from excess charge current is also set. VDET4 can be released with disconnecting a charger and connecting a load. DS (Delay Shorten) function Output delay time of over-charge, over-discharge can be shorter than those setting value by forcing equal or less than the delay shortening mode voltage to V- pin when the C OUT is “H”. Operation against 2-Cell Unbalance A/D/E version: If one of the cells detects over -charge and the output of C OUT becomes "L" and keeps the status, even if the other cell detects over -charge or over-discharge or short, the over -charge status is maintained and the output of C OUT keeps "L". If one of the cell detects over -charge and the output of C OUT becomes "L", the other cell detects over -discharge and the former cell is released from over-charge, after the delay time of the released from over-charge, the output of COUT becomes "H", and after the delay time of detecting over -discharge, the output of D OUT becomes "L". After detecting over -discharge, A/D/E version halts internal unnecessary circuits and be into the standby mode. (Supply current Max. 2.0µA) C/F version: If one of the cells detect s over-charge, and when the COUT becomes "L", even if the other cell would detect over - discharge or short, the over-charge detector will be dominant and C OUT keeps the "L" level. If one of the cell detects the over - discharge, and when the DOUT becomes "L", in case that a charger is connected to the battery pack and the other cell detects over-charge, the internal counter will start and after the delay time of over -discharge detector, DOUT will become "H". After the delay time of over -charge release from when the internal counter starts, C OUT will be "L". If the over -discharge is detected, internal unnecessary circuits will be cut off and the standby mode will be realized. (Standby current Max. 0.1µA) In any versions, the external FETs do not turn off at the same time.

NO.EA-165-250616 TIMING CHART (1) Timing diagram of Over-charge, Excess charge current AA/AC/AD version VDET1U VREL1U COUT VDD VDD VDET3 VSS VDET4 Connect Charger tVDET1 Connect Load Charger Open and Connect Load t t Charge/ Discharge Current Charge Current t t VDD-VC VC-VSS t VDET1L VREL1L Excess-charge Current tVREL1 tVDET1 tVREL1 tVDET4 tVREL4

NO.EA-165-250616 AE / AF version Charge/ Discharge Current Charge Current VDET1U VREL1U COUT VDD VDD Connect Charger Connect Load Charger Open and Connect Load t t t t VDD-VC t Excess-charge Current tVDET1 tVREL1 VDET1L VDET3 VREL1L VC-VSS VSS VDET4 tVDET1 tVREL1 tVDET4 tVREL4

NO.EA-165-250616 (2) Over-discharge, Excess discharge current, short circuit AA/AD version VDET2U DOUT VDD VSS Connect Charger Open t t Charge/ Discharge Current Charge Current t t VDD-VC VC-VSS t Connect Load Excess-discharge Current VREL2U Open Short tSHORT VDET2L VREL2L VSHORT VDD VSS VDET3 tVREL2 VDET4 tVREL3 tVDET2 tVREL2 tVDET2 tVREL3 tVDET3

NO.EA-165-250616 AC version VDET2U DOUT VDET2L VDD VSS VDD VDET3 VSS VDET4 Connect Charger tVDET2 Open t t Charge/ Discharge Current Charge Current t t VDD-VC VC-VSS t Short Connect Load VSHORT Connect Load tVREL2 Connect Charger Excess-discharge Current tSHORT Open tVREL3 tVDET2 tVREL2 tVDET3 tVREL3

NO.EA-165-250616 AE version VDET2U DOUT VDD VSS VDD VDET3 VSS VDET4 Connect Charger Open t t Charge/ Discharge Current Charge Current t t VDD-VC VC-VSS t Connect Load VDET2L VSHORT Overdischarge Current VREL2U VREL2L tVDET2 tVREL2 Open Short tSHORT tVREL3 tVREL2 tVDET2 tVREL3 tVDET3

NO.EA-165-250616 AF version Charge/ Discharge Current Charge Current t VDET2U DOUT VDD VSS VDD VDET3 VSS VDET4 t t t VDD-VC VC-VSS t VSHORT Connect Load tVDET2 Connect Charger tVREL2 Connect Load Connect Charger Excess- discharge Current Open Short tSHORT Open VREL2U VDET2L VREL2L tVDET2 tVREL2 tVDET3 tVREL3 tVREL3

NO.EA-165-250616 (3) Operation with unbalanced cells AC version VREL1U VDD t VDD-VC t VDET2L Connect Load Connect Load Open VDET1U COUT VDD VSS V- VDET3 VSS VDET4 t t t tVDET2 tVREL2 tVDET1 tVREL1 DOUT VDD VSS tVDET2 tVREL2 Connect Charger Connect Charger VC-VSS

NO.EA-165-250616 TYPICAL APPLICATION AND TECHNICAL NOTES VDD COUT DOUT Vss 1k Ω R5460 R1 330Ω Vc R2 330Ω C3 0.01μF 0.1μF 0.1μF

  • TECHNICAL NOTES R1, R2, C1 and C2 stabilize a supply voltage to the R5460xxxxxx. A recommended R1, R2 value is less than 1kΩ. A larger value of R1 and R2 makes the detection voltage shift higher because of some conduction current in the R5460x2xxxx. To stabilize the operation, the value of C1 and C2 should be equal or more than 0.01µF. R1 and R 3 can operate also as parts for current limit circuit against reverse charge or applying a charger with excess charging voltage beyond the absolute maximum rating of the R5460xxxxxx, the battery pack. Small value of R1 and R3 may cause over-power consumption rating of power dissipation of the R5460 xxxxx. Thus, the total value of 'R1+R3' should be equal or more than 1k Ω. If a large value R3 is set, after detecting over -discharge, the release by connecting a charger may not be possible. Therefore, recommendation value of R3 is equal or less than 3kΩ. To stabilize the operation of the IC, make sure to mount 0.01µF or more capacitor as C3. The typical application circuit diagram is just an example. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary. Over-voltage and the over current beyond the absolute maximum rating should not be forced to the protection IC and external components. Although the short protection circuit is built in the IC, if the positi ve terminal and the negative terminal of the battery pack are short, during the delay time of short limit detector, large current flows through the FET. Select an appropriate FET with large enough current capacity to prevent the IC from burning damage. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to humans or damages to property resulting from such failure, users should be careful enough to incorporate safe measures in design, such as redundancy feature, fire-containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products.

NO.EA-165-250616 TEST CIRCUITS A OSCILLOSCOPE V V- VDD DOUT COUT VSS V B VC COUT V VSS VDD C VC COUT V VSS VDD D VC DOUT V VSS VDD F VC DOUT VSS VDD V A E VC DOUT V VSS VDD H VC COUT VSS VDD V A G VC COUT VSS VDD V

NO.EA-165-250616 I VC COUT VSS VDD V A J VC DOUT VSS VDD V A K VC DOUT VSS VDD V A L VC A VSS VDD

NO.EA-165-250616 Typical Characteristics were obtained with using those above circuits: Test Circuit A: Part1: Typical characteristics 1) Test Circuit B: Part1: Typical characteristics 2) 4) 6) 7) Test Circuit C: Part1: Typical characteristics 3) 5) Test Circuit D: Part1: Typical characteristics 8) 10) 12) 13) Test Circuit E: Part1: Typical characteristics 9) 11) Test Circuit F: Part1: Typical characteristics 14) 15) 16) 17) 18) 19) Test Circuit G: Part1: Typical characteristics 20) 21) 22) 23) Test Circuit H: Part1: Typical characteristics 24) Test Circuit I: Part1: Typical characteristics 25) Test Circuit J: Part1: Typical characteristics 26) Test Circuit K: Part1: Typical characteristics 27) Test Circuit L: Part1: Typical characteristics 28) 29) 30)

NO.EA-165-250616 TYPICAL CHARACTERISTICS (Part 1) 5) Release Voltage from Over-charge (Cell2) vs.Temperature 6) Output Delay of Over-charge Detector vs. Temperature R5460x201AC R5460x201AC 1) Minimum Operating Voltage for 0V Cell Charging 2) Over-charge voltage threshold (Cell1) vs. Temperature R5460x201AC R5460x201AC 3) Over-Charge Voltage Threshold (Cell2) vs. Temperature 4) Release Voltage from Over-charge (Cell1) vs. Temperature R5460x201AC R5460x201AC 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 VST(V) Temperature Ta (°C) VDD=VSS=0V 4.325 4.330 4.335 4.340 4.345 4.350 4.355 4.360 4.365 4.370 4.375 -60 -40 -20 0 20 40 60 80 100 Over-charge voltage threshold Cell1 VDET1U(V) Temperature Ta (°C) Vc-Vss=3.5V 4.28 4.29 4.30 4.31 4.32 4.33 4.34 4.35 4.36 4.37 4.38 4.39 4.40 -50 -25 0 25 50 75 100 VDET1L（V） Temperature Ta (°C) VDD-VC=3.5V 4.00 4.05 4.10 4.15 4.20 4.25 4.30 -60 -40 -20 0 20 40 60 80 100 Release Voltage from Over-charge voltage detect Cell1 VREL1U（V） Tempperature Ta（°C） Vc-Vss=3.5V 4.00 4.05 4.10 4.15 4.20 4.25 4.30 -60 -40 -20 0 20 40 60 80 100 Release Voltage from Over- charge Cell2 VREL1L(V) Temperature Ta (°C) VDD-VC=3.5V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -60 -40 -20 0 20 40 60 80 100 Over-charge Detector Output Delay Time tVDET1(s) Temperature Ta (°C) VC-VSS=3.5V

NO.EA-165-250616 7) Output Delay of Release from Over-charge vs.Temperature 8) Over-discharge Detector Threshold (Cell1) vs.Temperature R5460x201AC R5460x201AC 9) Over-discharge Detector Threshold (Cell2)vs.Temperature 10) Release Voltage from Over-discharge(Cell1)vs.Temperature R5460x201AC R5460x202AA 11) Release Voltage from Over-discharge (Cell2) vs.Temperature 12) Output Delay Time for Over-discharge vs. Temperature R5460x202AA R5460x201AC -60 -40 -20 0 20 40 60 80 100 Output Delay Time of Release from Over-charge tVREL1(ms) Temperature Ta (°C) Vc-Vss=3.5V 2.20 2.23 2.25 2.28 2.30 2.33 2.35 2.38 2.40 -60 -40 -20 0 20 40 60 80 100 Over-discharge Detector Threshold Cell1 VDET2U(V) Temperature Ta (°C) Vc-Vss=3.5V 2.23 2.25 2.27 2.29 2.31 2.33 2.35 2.37 -50 -25 0 25 50 75 100 VDET2L（V） Temperature Ta (°C) VDD-VC=3.5V 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 -60 -40 -20 0 20 40 60 80 100 ReleaseVoltage from Over- discharge Cell1 VREL2 Temperature Ta (°C) Vc-Vss=3.5V 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 -60 -40 -20 0 20 40 60 80 100 Release from Over-discharge CELL2 (V) Temperature Ta (°C) VDD-Vc=3.5V 100 125 150 175 200 225 250 -60 -40 -20 0 20 40 60 80 100 Output Delay Time of Over- discharge tVDET2(ms) Temperature Ta (°C) Vc-Vss=3.5V

NO.EA-165-250616 13) Output Delay of Release from Over-discharge vs.Temperature 14) Excess discharge Current Detector Threshold vs. Temperature R5460x201AC R5460x201AC 15) Output Delay Time for Excess discharge-current Detector vs.Temperature 16) Output Delay for Release from Excess discharge-current vs. Temperature R5460x201AC R5460x201AC 17) Short Detector Voltage Threshold vs.Temperature 18) Output Delay for Short Detector vs. Temperature R5460x201AC R5460x201AC 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -60 -40 -20 0 20 40 60 80 100 Output Delay Time for Release from Over-discharge tVREL2 (ms) Temperature Ta (°C) Vc-Vss=3.5V 0.180 0.185 0.190 0.195 0.200 0.205 0.210 0.215 0.220 -60 -40 -20 0 20 40 60 80 100 Excess discharge Current Detector Threshold VDET3（V） Temperature Ta (°C) -60 -40 -20 0 20 40 60 80 100 Output Delay Time for Excess discharge-current Detector tVDET3（ms） Temperature Ta (°C) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 Output Delay for Release from Excess discharge-current tVREL3(ms) Temperature Ta (°C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 Short Detector Threshold VSHORT(V) Temperature Ta (°C) VDD-VC=VC-VSS=3.5V 100 150 200 250 300 350 400 450 500 550 600 -60 -40 -20 0 20 40 60 80 100 Output Delay Time for Short Detector TSHORT(μs) Temperature Ta (°C)

NO.EA-165-250616 19) Release resistance from Excess-discharge current vs.Temperature 20) Excess-charge current Detector Threshold vs. Temperature R5460x201AC R5460x201AC 21) Output Delay Time of Excess-charge current Detector Threshold vs.Temperature 22) Output Delay Time for Release from Excess-charge current vs. Temperature R5460x201AC R5460x201AC 23) Delay Shortening Mode Voltage vs. Temperature 24) Nch ON Voltage of COUT vs. Temperature R5460x201AC R5460x201AC -50 -25 0 25 50 75 100 Release Resistance from Excess- discharge current RSHORT(kΩ) Temperature Ta (°C) VDD-VC=VC-VSS=3.6V -0.50 -0.48 -0.46 -0.44 -0.42 -0.40 -0.38 -0.36 -0.34 -0.32 -0.30 -60 -40 -20 0 20 40 60 80 100 Excess Charge Current Detector Threshold VDET4(V) Temperature Ta (°C) -50 -25 0 25 50 75 100 Output Delay for detecting Excess charge current tVDET4(ms) Temperature Ta (°C) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 Output Delay for Release from Excess charge current detect tVREL4(ms) Temperature Ta (°C) -2.8 -2.6 -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -50 -25 0 25 50 75 100 Delay Shrtening Mode Threshold VDS (V) Temperature Ta (°C) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 -50 -25 0 25 50 75 100 Nch ON Voltage(COUT) VOL1(V) Temperature Ta (°C) VDD-VC=VC-VSS=4.5V, IOL=50μA

NO.EA-165-250616 25) Pch ON Voltage of COUT vs. Temperature 26) Nch ON Voltage of DOUT vs. Temperature R5460x201AC R5460x201AC 27) Pch ON Voltage of DOUT vs. Temperature 28) Supply Current vs. Temperature R5460x201AC R5460x201AC 6.3 6.5 6.7 6.9 7.1 7.3 7.5 7.7 7.9 -50 -25 0 25 50 75 100 Pch ON Voltage of COUT VOH1（V） Temperature Ta (°C) VDD-VC=VC-VSS=3.9V, IoH=-50μA 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 -50 -25 0 25 50 75 100 Nch ON Voltage of DOUT VOL2(V) Temperqture Ta (°C) VDD-VC=VC-VSS=2V, IoL=50μA 6.3 6.5 6.7 6.9 7.1 7.3 7.5 7.7 7.9 8.1 8.3 -50 -25 0 25 50 75 100 Pch On Voltage of DOUT VOH2(V) Temperature Ta (°C) VDD-VC=VC-VSS=3.9V、Dout・VSS=-50μA Min=6.8Ｖ, Typ.=7.4V -50 -25 0 25 50 75 100 Iss（μA） Temperature Ta (°C) VDD-VCC=VC-VSS=3.9V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -50 -25 0 25 50 75 100 Standby Current Istb(μA) Temperature Ta (°C) R5460x201AC (VDD-VC=VC-VSS=2.0V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 Standby Current Istb(uA) Temperature Ta (C) R5460X202AA (VDD-Vc=Vc-Vss=2.0V)

NO.EA-165-250616 Part 2 Delay Time dependence on VDD 1) Delay Time for Over-charge detector vs. VDD 2) Delay Time for Release from Over-charge vs. VDD 3) Output Delay of Over-discharge detector vs. VDD 4) Output Delay for Release from Over-discharge vs. VDD 5) Output Delay for Excess Discharge Current vs. VDD 6) Output Delay for Release from Excess Discharge Current Detect vs. VDD 0.2 0.4 0.6 0.8 1.2 4 4.5 5 5.5 6 Output delay of over-charge tVDET1[s] VDD[V] R5460x20XAX 3 3.5 4 4.5 Output delay of release from over- charge tVREL1[ms] VDD[V] R5460x20XAX 100 120 140 1 1.5 2 2.5 Output delay of over-discharge tVDET2[ms] VDD[V] R5460x20XAX 0.2 0.4 0.6 0.8 1.2 1.4 1.6 2 2.5 3 3.5 4 4.5 Output delay of release from over- discharge tVREL2[ms] VDD[V] R5460x20XAX 2 2.5 3 3.5 4 4.5 Output delay of excess discharge current tVDET3[ms] VDD[V] R5460x20XAX 0.2 0.4 0.6 0.8 1.2 1.4 2 2.5 3 3.5 4 4.5 Output delay of release from excess discharge-current tVREL3[ms] VDD[V] R5460x20XAX

NO.EA-165-250616 7) Delay Time for Excess Charge Current Detector vs. VDD 8) Delay Time for release from Excess charge current detect vs. VDD 9) Output Delay for Short vs. VDD 2 2.5 3 3.5 4 4.5 Output delay of excess charge- current tVDET4[ms] VDD[V] R5460x20XAX 0.2 0.4 0.6 0.8 1.2 1.4 2 2.5 3 3.5 4 4.5 Output delay of release from excess charge-current tVREL4[ms] VDD[V] R5460x20XAX 100 150 200 250 300 350 2 2.5 3 3.5 4 4.5 Output delay of short protection tSHORT[μs] VDD[V] R5460x20XAX

NO.EA-165-250616 Part 3 Supply Current dependence on VDD Test Circuit Supply Current vs. VDD A version B version VDD COUT DOUT Vss 1k Ω R1 330Ω Vc R2 330Ω C3 0.01μF 0.1μF 0.1μF PACK+ PACK- A R5460 CELL1 CELL2 0.5 1.5 2.5 3.5 4.5 0 1 2 3 4 5 6 7 8 Supply Current IDD(uA) VDD(V) 0.5 1.5 2.5 3.5 4.5 0 1 2 3 4 5 6 7 8 Supply Current IDD(uA) VDD(V)

NO.EA-165-250616 Part 4 Over-charge detector, Release voltage from Over-charge, Over-discharge detector, Release voltage from Over-discharge dependence on External Resistance value Test Circuit Over-charge Detector Threshold / Released Voltage from Over-discharge vs. R1 Over-discharge / Released from Over-charge Threshold vs. R1 VDD COUT DOUT Vss 1K Ω Vc R2 330Ω C3 0.01μF 0.1μF 0.1μF PACK+ PACK- R5460 CELL1 CELL2 2.97 2.98 2.99 3.01 3.02 3.03 3.04 3.05 3.06 3.07 2.386 2.388 2.39 2.392 2.394 2.396 2.398 2.4 2.402 2.404 2.406 0 200 400 600 800 1000 Over-discharge released voltage[V] Over-discharge threshold [V] R1[Ω] R5460x202AA Over-discharge threshold Over-discharge released voltage 2.3 2.34 2.38 2.42 2.46 2.5 2.296 2.298 2.3 2.302 2.304 2.306 2.308 2.31 2.312 2.314 2.316 0 200 400 600 800 1000 Over-charge released voltage[V] Over-discharge threshold [V] R1[Ω] R5460x201AC Over-discharge threshold Over-discharge released voltage 4.04 4.044 4.048 4.052 4.056 4.06 4.064 4.24 4.242 4.244 4.246 4.248 4.25 4.252 4.254 4.256 4.258 4.26 4.262 4.264 4.266 0 200 400 600 800 1000 Over-charge released voltage[V] Over-charge threshold [V] R1[Ω] R5460x202AA Over-charge threshold Over-charge released voltage 4.144 4.146 4.148 4.15 4.152 4.154 4.156 4.158 4.16 4.162 4.164 4.341 4.343 4.345 4.347 4.349 4.351 4.353 4.355 4.357 4.359 4.361 0 200 400 600 800 1000 Over-charge released voltage[V] Over-charge threshold [V] R1[Ω] R5460x201AC Over-charge threshold Over-charge released

NO.EA-165-250616 Part 5 Charger Voltage at Released from Over-discharge with a Charger dependence on R2 Test Circuit Charger Voltage at Release from Over-discharge with a charger vs. R2 VDD COUT DOUT Vss Vc C3 0.01μF 0.1μF 0.1μF PACK+ PACK- R5460 330Ω 330Ω CELL1 CELL2 0 1 2 3 4 5 6 7 8 9 10 11 12 Charger Voltage of Release from Over-discharge[V] R3[kΩ] R5460x201AC CELL1=4.25V,CELL2=4.25V

NO.EA-165-250616 TECHNICAL NOTES A peripheral component or the device mounted on PCB should not exceed a rated voltage, a rated current or a rated power. When designing a peripheral circuit, please be fully aware of the following points.

  • Please evaluate the product at the PCB level before use, as some symptoms may remain that cannot be confirmed by the evaluation at the IC level.
  • When using any coating or underfill to improve moisture resistance or joining strength, evaluate them adequately before using. In certain materials or coating conditions, corrosion by contained constituents, current leakage by moisture absorption, crack and delamination by physical stress can happen. If the curing temperature of the coating material or underfill material exceeds the absolute maximum rating, the electrical characteristics of this product may change.
  • When performing X-ray inspection in mass production process and evaluation build stage such as the product functions and characteristics confirmation, please confirm X-ray irradiation does not exceed 1.5Gy (absorbed dose for air).

PRODUCT CODE LIST R5460x2xxxx Ver. 1. 00 i The product code is determined by a combination of the three digits set voltage code, the delay time code, and the function code. Product Code Table Product Name Set Voltage [V] Delay Time VDET1U VREL1U VDET1L VREL1U VDET2U VREL2U VDET2L VREL2L VDET3 VDET4 tVDET1 [s] tVDET2 [ms] tVDET3 [ms] tVDET4 [ms]

PRODUCT CODE LIST R5460x2xxxx Ver. 1. 00 i Product Code Table Product Name Set Voltage [V] Delay Time VDET1U VREL1U VDET1L VREL1U VDET2U VREL2U VDET2L VREL2L VDET3 VDET4 tVDET1 [s] tVDET2 [ms] tVDET3 [ms] tVDET4 [ms] R5640x: R5640N and R5640K are available. Please contact our sales representatives if required a product code other than the above combinations.

Ver.B i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5460N2xxxx (SOT-23-6) Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our s ales or distributor before attempting to use AOI. R5640N2xxxx Part Marking List Product Name   Product Name   R5460N202AA 3B R5460N208AE 3T R5460N203AA 3C R5460N212AE 3U R5460N204AA 3E R5460N214AE 3V R5460N205AA 3F R5460N207AF 3W R5460N206AA 3G R5460N208AF 3X R5460N207AA 3H R5460N212AF 3Y R5460N208AA 3J R5460N214AF 3Z R5460N211AA 3K R5460N229AD 9G R5460N212AA 3L R5460N230AA 9H R5460N201AC 3M R5460N233AF 9J R5460N209AD 3N R5460N235AA 9K R5460N210AD 3P R5460N241AF 9L R5460N213AD 3Q R5460N245AA 9M R5460N214AC 3R R5460N207AE 3S

Ver. A i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5460K2xxxx (DFN(PL)1820-6) Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our s ales or distributor before attempting to use AOI. R5640K2xxxx Part Marking List Product Name  R5460K202AA AE02 R5460K203AA AE03 R5460K204AA AE05 R5460K205AA AE06 R5460K206AA AE07 R5460K207AA AE08 R5460K208AA AE09 R5460K211AA AE10 R5460K201AC AE11 R5460K209AD AE12 R5460K210AD AE13 R5460K213AD AE14 R5460K214AC AE15 6 5 4 1 2 3

PACKAGE DIMENSIONS SOT-23-6 DM-SOT-23-6-JE-B i ensions (Unit: mm) 2.9±0.2 1.9±0.2 (0.95) (0.95) 6 4 1 2 3 1.6-0.1 +0.2 2.8±0.3 0.4-0.2 Unit : mm +0.1 0.8±0.1 1.1-0.1 +0.2 0 to 0.1 0.15-0.05 +0.1 0.2MIN.

PACKAGE DIMENSIONS DFN(PL)1820-6 DM-DFN(PL)1820-6-JE-B i DFN(PL)1820-6 Package Dimensions *∗ The tab on the bottom of the package is substrate level (VDD). It is recommended that the tab be connected to the VDD pin on the board, or otherwise be left floating.

  1. T he products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.
  • Aerospace Equipment
  • Equipment Used in the Deep Sea
  • Power Generator Control Equipment (nuclear, steam, hydraulic, etc.)
  • Life Maintenance Medical Equipment
  • Fire Alarms / Intruder Detectors
  • Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.)
  • Various Safety Devices
  • Traffic control system
  • Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/