R5443Z NISSHINBO | Alldatasheet
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Technical content
1-Cell Li-ion Battery Protection IC with High-accuracy Overcharge Protection NO.EA-507-210730 OUTLINE The R5443Z is a one- cell Li- ion / polymer battery protection IC provides overcharge, overdischarge, and discharge / charge overcurrent detections. One of the features of this device is a high- accuracy detection at overcharge and overcurrent. The supply current after overdischarge detection can be reduced to a minimum by stopping the internal circuits. The small WLCSP package is available.
FEATURES
Detector Selectable Range and Accuracy (Unless otherwise provided, Ta=25°C) (0.015 V to 0.050 V in 0.001 V step / 0.050 V to 0.150 V in 0.005 V step, 0.015 V to 0.030 V : ±3mV / 0.030 V to 0.050 V : ±10% / 0.050 V to 0.150 V: ±5mV) (–0.030 V to –0.015 V in 0.001 V step / –0.150 V to –0.030 V in 0.005 V step, –0.020 V to –0.015 V: ±4mV / Internal Fixed Output Delay Time
- Overdischarge Detection Delay Time (tVDET2) ············ 16 ms / 32 ms / 128 ms
- Discharge Overcurrent Detection Delay Time (tVDET3) ·· 8 ms /16 ms / 32 ms / 128 ms / 512 ms
- Charge Overcurrent Detection Delay Time (tVDET4) ····· 8 ms (1) When 0°C ≤ Ta ≤ 50°C NRND Product
NO.EA-507-210730 Functions
- Discharge Overcurrent Release Option ············· Auto Release Type / Latch Type
APPLICATIONS
- Li+ / Li- Polymer protector of Overcharge, Overdischarge, and Overcurrent for Battery pack
- High precision protectors for smart -phones and any other electronic gadgets using on- board Li+ / Li - Polymer battery NRND Product
NO.EA-507-210730 SELECTION GUIDE Overcharge and Overdischarge voltages, and Discharge overcurrent are user-selectable. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5443Zxxx$∗-E2-F WLCSP-6-P7 5,000 pcs Yes Yes xxx: Specify a code combined the set output voltages. Refer to “Product Code List” for details. $: Specify a delay time version from the table below. ςερ. tVDET1 [s] tVDET2 [ms] tVDET3 [ms] tVDET4 [ms] tVR1 [ms] tVR2/3 [ms] tVR4 [ms] tSHORT [ms] A 1.0 128 512 8 16 1.1 1.1 0.28 B 1.0 32 512 8 16 1.1 1.1 0.28 C 1.0 32 16 8 16 1.1 1.1 0.28 D 1.0 16 16 8 16 1.1 1.1 0.28 J 1.0 128 128 8 16 1.1 1.1 0.28 L 1.0 32 32 8 16 1.1 1.1 0.28 P 1.0 128 16 8 16 1.1 1.1 0.28 Q 1.0 128 32 8 16 1.1 1.1 0.28 ∗: Specify a version combined following functions from the table below. Ver. Overcharge Release Overdischarge Release Discharge Overcurrent Release 0-V Charge VDET4 A Latch Latch Auto Release Available Enable C Latch Latch Latch Available Enable G Latch Latch Auto Release Unavilable Enable H Latch Latch Latch Unavilable Enable NRND Product
NO.EA-507-210730 Product Code List Product Code Table Code VDET1 (V) VDET2 (V) VDET3 (V) VDET4 (V) VSHORT (V) tVDET1 (s) tVDET2 (ms) tVDET3 (ms) tVDET4 (ms) tSHORT (ms) Discharge Overcurrent Release 0-V Charge (Yes/No(1)) (1) “No” means the timer reset delay time option is unavailable. NRND Product
NO.EA-507-210730 Block Diagram Detector Short Delay VD3 VD4 DOUT COUT Oscillator VD1 VD2 Level Shift VD3 Counter Logic Circuit Logic Circuit VDD VSS DS Circuit RSEN R5443Z Block Diagram PIN DESCRIPTION <Top View> <Bottom View> R5443Z (WLCSP-6-P7) Pin Configuration R5443Z Pin Description Pin No. Symbol Pin Description A1 V- Charger negative input pin B1 VDD Power supply pin, Substrate level in IC C1 VSS Ground pin A2 COUT Overcharge detection pin, CMOS output B2 RSENS Overcurrent detection input pin C2 DOUT Overdischarge detection pin, CMOS output NRND Product
NO.EA-507-210730 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings (Ta = 25°C, VSS = 0 V) Symbol Parameter Rating Unit VDD Supply Voltage –0.3 to 12 V RSENSE V− Pin Voltage RSENSE Pin Voltage VDD – 30 to VDD + 0.3 VDD – 30 to VDD + 0.3 V V VCOUT VDOUT COUT Pin Voltage DOUT Pin Voltage VDD – 30 to VDD + 0.3 VSS – 0.3 to VDD + 0.3 V V PD Power Dissipation Refer to Appendix “Power Dissipation” Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Parameter Rating Unit VDD1 Operating Input Voltage 1.5 to 5.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. NRND Product
NO.EA-507-210730
ELECTRICAL CHARACTERISTICS
R5443Zxxxxx Electrical Characteristics ( Ta = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit Test Circuit(1) VDD1 Operating Input Voltage VDD – VSS 1.5 5.0 V A VST Minimum Operating Voltage at 0 V Charging (2) Voltage Defined as VDD–V-, VDD – VSS = 0 V 1.8 V A VNOCHG Maximum Operating Voltage at Charging Inhibition (Disabled 0 V Charging) (3) Voltage Defined as VDD–VSS, VDD – V- = 4 V 1.00 1.25 1.50 V A VDET1 Overcharge Detection Voltage R1 = 330 Ω, VDET1 − 0.010 VDET1 VDET1 + 0.010 V B tVDET1 Overcharge Detection tVREL1 Overcharge Release Delay Time VDD = 4 V, V- = 0 V → 1 V 12.0 16.0 20.0 ms C VDET2 Overdischarge Detection Voltage Detect falling edge of supply voltage VDET2 × 0.98 VDET2 VDET2 × 1.02 V D tVDET2 Overdischarge Detection Delay Time VDD = 3.6 V → 2.0 V tVDET2 × 0.80 tVDET2 tVDET2 × 1.20 ms D tVREL2 Overdischarge Release VDET3 Discharge Overcurrent Detection Voltage Detect rising edge of RSENSE pin voltage 0.015 V to 0.030 V VDET3 – 0.003 VDET3 VDET3 + 0.003 V F 0.031 V to 0.050 V VDET3 × 0.900 VDET3 × 1.100 V F 0.051 V to 0.150 V VDET3 – 0.005 VDET3 + 0.005 V F VREL3 Discharge Overcurrent Released Voltage VDD = 3.6 V, Detect falling edge of V- pin voltage 0.050 0.200 0.350 V F tVDET3 Discharge Overcurrent Detection Delay Time VDD = 3.6V, V- = 0 V, VRSENS = 0 V → VDET3 + 0.010 tVDET3 × 0.80 tVDET3 tVDET3 × 1.20 ms F tVREL3 Discharge Overcurrent Release Delay Time VDD = 3.6 V, VRSENS = V- = 3 V → 0 V 0.85 1.10 1.35 ms F VSHORT Short Protection Voltage Detect rising edge of RSENS pin voltage VSHORT – 0.005 VSHORT VSHORT + 0.005 V F tSHORT Short Protection Delay Time VDD = 3.6 V, V- = 0 V, VRSENS=0V → VSHORT+0.010 210 280 350 µs F RSHORT Reset Resistance for Discharge Overcurrent Protection (5) VDD = 3.6 V, V- = 1.0 V, VRSENS = V- = 0 V 20 45 70 kΩ F (1) Refer to Test Circuit diagrams. (2) R5443ZxxxxA/C only (3) R5443ZxxxxG/H only (4 ) This temperature characteristic can be corrected by laser -trimming with consideration given to variation in process parameters. This specification is guaranteed by design, not mass production tested. (5) Appropriate products except for R5443ZxxxxH. NRND Product
NO.EA-507-210730 R5443Zxxxxx Electrical Characteristics (Continued) ( Ta = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit Test Circuit(1) VDET4 Charge Overcurrent Detection Voltage Detect falling edge of ‘RSENS’ pin voltage –0.020 V to –0.015 V VDET4 – 0.004 VDET4 VDET4 + 0.004 V F –0.040 V to –0.021 V VDET4 × 0.800 VDET4 × 1.200 V F –0.150 V to –0.040 V VDET4 – 0.008 VDET4 + 0.008 V F tVDET4 Charge Overcurrent Detection Delay Time VDD = 3.6 V, V- = 0 V, VRSENS = 0 V → –1 V 6 8 10 ms F tVREL4 Charge Overcurrent Release Delay Time VDD = 3.6 V, VRSENS = V- = –1 V → 1 V 0.85 1.10 1.35 ms F VDS Delay Time Shortening Mode Voltage VDD = 3.6 V −2.6 −2.0 −1.4 V G VOL1 Nch ON-Voltage of COUT IOL = 50 µA, VDD = 4.55 V 0.4 0.5 V H VOH1 Pch ON-Voltage of COUT IOH = –50 µA, VDD = 3.9 V 3.4 3.7 V I VOL2 Nch ON-Voltage of DOUT IOL = 50 µA, VDD = 2.0 V 0.2 0.5 V J VOH2 Pch ON-Voltage of DOUT IOH = –50 µA, VDD = 3.9 V 3.4 3.7 V K IDD Supply Current VDD = 3.9 V, V- = VRSENS = 0 V 2.5 6.0 µA L ISTANDBY Standby Current VDD = 1.9 V 0.04 µA L All of these specifications are guaranteed by design, not tested in mass production. (1) Refer to Test Circuit diagrams. NRND Product
NO.EA-507-210730 Test Circuits A B C D E F G H I J K L OSCILLOSCOPE VDD DOUT COUT VSS V V RSENS V VDD VSS COUT RSENS VDD VSS COUT RSENS V VDD VSS DOUT RSENS VDD VSS DOUT RSENS V A VDD VSS DOUT RSENS V VDD VSS COUT RSENS V A VDD VSS COUT RSENS V A VDD VSS COUT RSENS V A VDD VSS DOUT RSENS V A VDD VSS DOUT RSENS A VDD VSS RSENS NRND Product
NO.EA-507-210730 THEORY OF OPERATION VD1: Overcharge Detector The VD1 monitors VDD pin voltage during charge. When the V DD voltage crosses overcharge detector threshold VDET1, the VD1 can sense overcharge and the output of COUT pin becomes “L” and stop charging by turning off the external Nch. MOSFET. After detecting overcharge, when the voltage of VDD pin is less than overcharge detection voltage, depending on the characteristics of external components such as MOSFETs, release conditions may be not enough and a kind of load must be set to release the overcharge. Then, the output level of COUT becomes “H” and by turning on the external Nch. MOSFET, the battery charger is ready to work again. In other words, once detecting overcharge, even if the cell voltage would become lower than VDET1, if a charger were being set, recharge is impossible. Therefore, there is no hysteresis for VD1. To judge whether or not load is connected, the discharge overcurrent detector is used. In other words, by connecting some load, V- pin voltage becomes equal or more than the discharge overcurrent detection voltage, and reset the overcharge detecting state. When the Input level of VDD pin is equal or more than overcharge detection voltage, and while a charger is disconnected from the battery pack, if a load is connected to the battery pack, the output level of COUT pin is “L”. However, load current can be drawn through a parasitic diode of an external Nch. MOSFET. Then, when the voltage level of VDD pin becomes lower than overcharge detection voltage, the output level of COUT pin becomes “H”. O utput delay time for overcharge detection and rel eased overcharge is internally fixed respectively. If VDD decreases under VDET1 within the overcharge release delay time (tVDET1) after exceeding VDET1, the VD1 will not work. A level shifter is built in a buffer driver for the COUT pin, therefore, the “L” level is equal to the voltage level of V- pin. The output type of COUT pin is CMOS type. The Output level is between VDD and V-. VD2: Overdischarge Detector The VD2 monitors a VDD pin voltage during discharge. When the V DD voltage crosses the overdischarge detector threshold VDET2 from a high level to a lower level than VDET2, the VD2 senses overdischarge and stop discharge by turning off an external Nch. MOSFET. To reset the VD2 with the DOUT pin level being “H” again after detecting over -discharge, if VDD voltage is equal or less than overcharge detector threshold, a charge current flows through a parasitic diode of the external Nch. MOSFET. After that, when VDD voltage is more than overdischarge threshold, DOUT pin becomes "H", and by tuning on the external Nch. MOSFET, discharge is possible. A charge operation when a cell voltage equals to zero is different according to the function version. R5443ZxxxA/C: When a cell voltage is equal to 0V, connecting a charger to the battery pack makes COUT pin become "H" and the system is allowable for charge while the voltage of the charger is more than the maximum limit of the minimum operating voltage (VST) for 0V charge. R5443ZxxxG/H: When the VDD pin voltage is equal or less than the maximum voltage for inhibition of charger (VNOCHG), even if a charger is connected to the battery pack , COUT pin is stacked with "L" and the system is not allowable for charge. NRND Product
NO.EA-507-210730 Output delay for overdischarge detection is fixed internally . Although the voltage of V DD becomes equal or less than overdischarge detector threshold and if it becomes higher than overdischarge detector threshold within output delay time, overdischarge detector does not work. Output delay time for release from over - discharge is also set internally. After detecting overdischarge by VD2, supply current would decrease, (V DD = type and its output level is in between VDD and VSS. VD3: Discharge Overcurrent Detector, Short Circuit Protector While charge and discharge are acceptable with the battery pack, VD3 monitors the voltage level between VSS pin and RSENS pin. In the cause of such as the external short circuit, if the voltage level between VSS pin and RSENS pin may become equal or more than the discharge overcurrent threshold and less than the short detector threshold, the discharge overcurrent detector works. When the voltage level between VSS pin and RSENS pin becomes equal or more than short detector threshold voltage, the short circuit protector works and the output level of DOUT becomes “L”, and by turning off an external Nch MOSFET, VD3 protects against flowing extremely large current into the circuit. Output delay time for the discharge overcurrent detector is internally fixed. When the voltage between V- pin and RSENSE pin becomes less than VDET3 within the output delay time, the overcurrent detector does not work. In the case of the discharge overcurrent of the auto release type, a pulldown resistor of 45k Ω (typ.) is connected between the V - and the VSS pins. After a discharge overcurrent or short circuit protection is detected, by removing a cause of overcurrent or external short circuit, the voltage level of V- is pulled down through the resistor for release from overcurrent to the VSS level. Then, when the voltage level between V- pin and VSS pin becomes equal or less than the o vercurrent threshold voltage, both protection circuits are released automatically. Resistor for release from discharge o vercurrent is active when discharge overcurrent or short circuit is detected. The resistor is inactive in the normal mode. VD4: Charge Overcurrent Detector While charge and discharge are acceptable with the battery pack, VD4 monitors the voltage level between VSS pin and RSENS pin . For example, if the voltage level between VSS pin and RSENS pin may become equal or less than the charge overcurrent threshold, the charge overcurrent detector works and the output level of COUT becomes “L”, and by turning off an external Nch. MOSFET, VD4 protects against flowing extremely large current into the circuit. Output delay of the charge overcurrent is internally fixed. Even the voltage level of between VSS pin and RSENS pin becomes equal or lower than the charge overcurrent detector threshold, if the voltage is higher than the VD4 threshold within the delay time, the charge overcurrent state is not detected. Output delay time for release from the charge overcurrent is also set internally. VD4 can be released with disconnecting a charger. DS (Delay Shortening) Function Output delay time of overcharge and overdischarge can be shorter than those setting values by forcing equal or lower than the test shortening mode voltage (Typ. -2.0V) to V- pin. NRND Product
NO.EA-507-210730 Timing Diagrams Overcharge Voltage / Current Timing Diagram NRND Product
NO.EA-507-210730 Overdischarge/ Discharge Overcurrent (1) / Short Circuit Timing Diagrams (1) Auto release type only VDET2 VDD DOUT VDD VSS RSENS VDD VDET3 VSS Connect Load Connect Charger tVREL2 tVDET2 Open t t Charge/ Discharge Current Charge Current Discharge Current t t tVDET3tVDET2 tVREL2 Excess Discharge Short Vshort tshort tVREL3 tVREL3 VDD VDET3 VSS t Vshort Connect Load Connect Charger Open NRND Product
NO.EA-507-210730
APPLICATION INFORMATION
Typical Application Circuit VDD COUT DOUT VSS 0.1µF 1kΩ 330Ω R5443Z CIN RSENS R5443Z Typical Application Circuit R1 and CIN stabilize a supply voltage to the R5443Z. A recommended R1 value is less than 1kΩ. A large value of R1 makes detection voltage shift higher because of conduction current flowed in the R5443Z . Further, to stabilize the operation of R5443Z, use the CIN with the value of 0.01µF or more. R1 and R2 can operate also as parts for current limit circuit against reverse charge or applying a charger with overcharging voltage to the R54 43Z, battery pack. While small value of R1 and R2 may cause over power dissipation rating of the R5443Z, therefore a total of “R1+R2” should be 1k Ω or more. Besides, if large value of R2 is set, release from overdischarge by connecting a charger might not be possible. Recommended R2 value is equal or less than 10kΩ. R3 is a resistor for sensing an overcurrent. If the resistance value is too large, power loss becomes also large. By the overcurrent, if the R3 is not appropriate, the power loss may be beyond the power dissipation of R3. Choose an appropriate R3 according to the cell specification. The typical application circuit diagram is just an example. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary. Overvoltage and overcurrent beyond the absolute maximum rating should not be forced to the protection IC and external components. Although the short protection circuit is built in the IC, if the positive terminal and the negative terminal of the battery pack are short, during the delay time of short limit detector, large current flows through the FET. Select an appropriate FET with large enough current capacity to prevent the IC from burning damage. NRND Product
POWER DISSIPATION WLCSP-6-P7 Ver. B i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 101.5 mm x 114.5 mm x 1.6 mm Copper Ratio Outer Layer (First Layer): 10% Inner Layers (Second and Third Layers): 99.5 x 99.5mm 100% Outer Layer (Fourth Layer): 10% Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 540 mW Thermal Resistance (ja) ja = 183 °C/W ja: Junction-to-Ambient Thermal Resistance Power Dissipation vs. Ambient Temperature Measurement Board Pattern 100 200 300 400 500 600 0 25 50 75 100 125 Power Dissipation (mW) Ambient Temperature (°C) 540 NRND Product
Ver. A i PACKAGE DIMENSIONS NRND Product
Visual Inspection Criteria WLCSP VI-160823 i No. Inspection Items Inspection Criteria Figure 1 Package chipping A≥0.2mm is rejected B≥0.2mm is rejected C≥0.2mm is rejected And, Package chipping to Si surface and to bump is rejected. 2 Si surface chipping A≥0.2mm is rejected B≥0.2mm is rejected C≥0.2mm is rejected But, even if A≥0.2mm, B≤0.1mm is acceptable. 3 No bump No bump is rejected.
4 Marking miss To reject incorrect marking, such as
another product name marking or another lot No. marking. 5 No marking To reject no marking on the package.
6 Reverse direction of
To reject reverse direction of marking character.
7 Defective marking
To reject unreadable marking. (Microscope: X15/ White LED/ Viewed from vertical direction)
8 Scratch To reject unreadable marking
character by scratch. (Microscope: X15/ White LED/ Viewed from vertical direction)
9 Stain and Foreign
To reject unreadable marking character by stain and foreign material. (Microscope: X15/ White LED/ Viewed from vertical direction) NRND Product
- T he products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.
- Aerospace Equipment
- Equipment Used in the Deep Sea
- Power Generator Control Equipment (nuclear, steam, hydraulic, etc.)
- Life Maintenance Medical Equipment
- Fire Alarms / Intruder Detectors
- Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.)
- Various Safety Devices
- Traffic control system
- Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/