R5441Z

R5441Z NISSHINBO | Alldatasheet

Document overview

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Technical content

1-Cell Li-ion Battery Protection IC with Temperature Protection NO.EA-506-200619 OUTLINE The R5441Z is one-cell Li-ion / polymer battery protection IC provides overcharge, overdischarge, discharge / charge overcurrent, and temperature detections. One of the features of this device is a high-accuracy detection at overcharge and overcurrent. The supply current after overdischarge detection can be reduced to a minimum by stopping the internal circuits. The small WLCSP package is available.

FEATURES

Detector Selectable Range and Accuracy (Unless otherwise provided, Ta=25°C) (0.015 V to 0.050 V in 0.001 V step / 0.050 V to 0.150 V in 0.005 V step, 0.015 V to 0.030 V: ±3mV / 0.030 V to 0.050 V: ±10% / 0.050 V to 0.150 V: ±5mV) (-0.030 V to -0.015 V in 0.001 V step / -0.150 V to -0.030 V in 0.005 V step, R5441ZxxxV/W: 40°C to 75°C (in 5°C step, ±3°C)

• Thermal Release Hysteresis Temperature ··············· 0°C to 5°C (in 1°C step) Internal Fixed Output Delay Time
• Overdischarge Detection Delay Time (tVDET2) ············ 16 ms / 32 ms / 128 ms (1) When 0°C ≤ Ta ≤ 50°C (2) The R5441Z requires a NTC thermistor having a reference resistance value of 100kΩ or 470kΩ ±1% at 25°C and B- constant of 4250K±1%. NRND Product

NO.EA-506-200619

• Discharge Overcurrent Detection Delay Time (tVDET3) ·· 8 ms / 16 ms / 32 ms / 128 ms / 256 ms / 512 ms / 1024 ms / 3072 ms
• Charge Overcurrent Detection Delay Time (tVDET4) ····· 8 ms Optional Functions
• Hysteresis for Overdischarge Release Voltage·········· Available or Unavailable
• Discharge Overcurrent Release Conditions ·············· Auto Release Type or Latch Type

APPLICATIONS

• Li+ / Li- Polymer protector of Overcharge, Overdischarge, and Overcurrent for Battery pack
• High precision protectors for smart -phones and any other electronic gadgets using on- board Li+ / Li - Polymer battery NRND Product

NO.EA-506-200619 SELECTION GUIDE Overcharge and Overdischarge voltages, and Discharge overcurrent are user-selectable. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5441Zxxx$∗-E2-F WLCSP-8-P2 5,000 pcs Yes Yes xxx: Specify a code combined the set output voltages. Refer to “Product Code List” for details. $: Specify a delay time version from the table below. Ver. tVDET1 (ms) tVDET2 (ms) tVDET3 (ms) tVDET4 (ms) tVREL1 (ms) tVREL2/3 (ms) tVREL4 (ms) tSHORT (μs) tTDET (ms) tTREL (ms) tTS (ms) tTNS (ms) A 1024 128 512 8 16 1.1 1.1 0.28 128 128 10 90 B 1024 32 512 8 16 1.1 1.1 0.28 128 128 10 90 E 1024 16 32 8 16 1.1 1.1 0.28 128 128 10 90 G 1024 32 512 8 16 1.1 1.1 0.28 1024 128 10 90 H 1024 32 1024 8 16 1.1 1.1 0.28 1024 128 10 90 J 1024 128 128 8 16 1.1 1.1 0.28 128 128 10 90 K 1024 16 8 8 16 1.1 1.1 0.28 512 128 10 90 L 1024 32 32 8 16 1.1 1.1 0.28 1024 128 10 390 M 1024 32 32 8 16 1.1 1.1 0.28 1024 128 10 390 N 1024 32 16 8 16 1.1 1.1 0.28 1024 128 10 390 U 1024 128 512 8 16 1.1 1.1 0.28 1024 128 10 390 V 1024 32 512 8 16 1.1 1.1 0.28 1024 128 10 390 X 1024 32 32 8 16 1.1 1.1 0.28 1024 128 10 90 ∗: Specify a version combined following functions from the table below. Ver. Release Conditions 0-V Charge NTC Thermistor Overcharge Overdischarge DischargeOvercurrent N Latch Latch (with Hysteresis) Auto Release Unavilable 470kΩ P Latch Latch (with Hysteresis) Latch Unavilable 470kΩ V Latch Latch (without Hysteresis) Auto Release Available 100kΩ W Latch Latch (without Hysteresis) Auto Release Unavilable 100kΩ NRND Product

NO.EA-506-200619 Product Code List Product Code Table Code VDET1 (V) VREL1 (V) VDET2 (V) VREL2 (V) VDET3 (V) VDET4 (V) VSHORT (V) TDET1 (°C) TDET2 (°C) tVDET2 (ms) tVDET3 (ms) RTH (kΩ) 0-V Charge (Yes/No(1)) (1) “No” means the 0 V battery charging is prohibited. NRND Product

NO.EA-506-200619 Block Diagram Detector Short Delay DS Circuit Level Shift Logic Circuit Circuit Logic Counter VD3 Oscillator VD4 VD2 VD1 TD1 Oscillator Counter TD2 Temperature Sense DOUT COUT VDD VSS TIN RSENS R5441Z Block Diagram PIN DESCRIPTION <Top View> <Bottom View> R5441Z (WLCSP-8-P2) Pin Configuration R5441Z Pin Description Pin No. Symbol Pin Description A1 V- Charger negative input pin B1 VDD Power supply pin, Substrate level in IC C1 NC No connection D1 VSS Ground pin A2 COUT Overcharge detection pin, CMOS output B2 RSENS Overcurrent detection input pin C2 TIN Temperature detection input pin D2 DOUT Discharge detection pin, CMOS output NRND Product

NO.EA-506-200619 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings (Ta = 25°C, VSS = 0 V) Symbol Parameter Rating Unit VDD Supply Voltage -0.3 to 12 V RSENSE VTIN V− Pin Voltage RSENSE Pin Voltage TIN Pin Voltage VDD - 30 to VDD + 0.3 VDD - 30 to VDD + 0.3 VSS - 0.3 to VDD + 0.3 V V V VCOUT VDOUT COUT Pin Voltage DOUT Pin Voltage VDD - 30 to VDD + 0.3 VSS - 0.3 to VDD + 0.3 V V PD Power Dissipation 150 mW Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Parameter Rating Unit VDD1 Operating Input Voltage 1.5 to 5.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. NRND Product

NO.EA-506-200619

ELECTRICAL CHARACTERISTICS

R5441Zxxxxx Electrical Characteristics ( Ta = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit Test Circuit(1) VDD1 Operating Input Voltage VDD - VSS 1.5 5.0 V A VST Minimum Operating Voltage at 0 V Charging Voltage Defined as VDD - V−, VDD - VSS = 0 V 1.8 V A VNOCHG Maximum Operating Voltage at Charging Inhibition (Disabled 0 V Charging) Voltage Defined as VDD - VSS, VDD - V− = 4 V 1.00 1.25 1.50 V A VDET1 Overcharge Detection Voltage R1 = 330 Ω, VDET1 −0.010 VDET1 VDET1 +0.010 V B tVDET1 Overcharge Detection tVREL1 Overcharge Release Delay Time VDD = 4V, V- = 0V → 1V 12.0 16.0 20.0 ms C VDET2 Overdischarge Detection Voltage Detect falling edge of supply voltage VDET2 ×0.98 VDET2 VDET2 ×1.02 V D tVDET2 Overdischarge Detection Delay Time VDD = 3.6 V to 2.0 V tVDET2 ×0.80 tVDET2 tVDET2 ×1.20 ms D tVREL2 Overdischarge Release Delay Time VDD = 3.6 V, V- = 3.6 V → 0 V 0.85 1.10 1.35 ms E VDET3 Discharge Overcurrent Detection Voltage Detect rising edge of V- pin voltage

0.015 V to

0.030 V VDET3 -0.003 VDET3 VDET3 +0.003 V F 0.031 V to 0.050 V VDET3 ×0.900 VDET3 ×1.100

0.051 V to

0.150 V VDET3 -0.005 VDET3 +0.005 VREL3 Discharge Overcurrent Release Voltage VDD = 3.6 V, Detect falling edge of V- pin voltage R5441Zxxxx N/P -0.020 0.000 0.020 V F R5441Zxxxx V/W 0.050 0.200 0.350 tVDET3 Discharge Overcurrent Detection Delay Time VDD = 3.6V, V- = 0V → VDET3 + 0.010, VRSENS = 0 V tVDET3 ×0.80 tVDET3 tVDET3 ×1.20 ms F tVREL3 Discharge Overcurrent Release Delay Time VDD = 3.6 V, V- = 3 V → -1 V VRSENS = 0 V 0.85 1.10 1.35 ms F VSHORT Short Protection Voltage Detect rising edge of V- pin voltage VSHORT -0.005 VSHORT VSHORT +0.005 V F tSHORT Short Protection Delay Time VDD = 3.6 V, V- = 0V → VSHORT+0.010, VRSENS = 0 V 210 280 350 µs F RSHORT Reset Resistance for Discharge Overcurrent Protection VDD = 3.6 V, V- = 1.0 V, VRSENS = 0 V 20 45 70 kΩ F (1) Refer to Test Circuit diagrams. (2) Considering of variation in process parameters, we compensate for this characteristic related to temperature by laser- trim, however, this specification is guaranteed by design, not mass production tested. NRND Product

NO.EA-506-200619 R5441Zxxxxx Electrical Characteristics (Continued) ( Ta = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit Test Circuit(1) VDET4 Charge Overcurrent Detection Voltage Detect falling edge of V- pin voltage -0.020 V to -0.015 V VDET4 -0.004 VDET4 VDET4 +0.004 V F -0.040 V to -0.021 V VDET4 ×0.800 VDET4 VDET4 ×1.200 -0.150 V to -0.040 V VDET4 -0.008 VDET4 VDET4 +0.008 tVDET4 Charge Overcurrent Detection Delay Time VDD = 3.6 V, V- = 0 V → -1 V VRSENS = 0 V 6 8 10 ms F tVREL4 Charge Overcurrent Release Delay Time VDD = 3.6 V, V- = -1V → 0.3V VRSENS = 0 V 0.85 1.10 1.35 ms F VDS Delay Time Shortening Mode Voltage VDD = 3.6 V −2.6 −2.0 −1.4 V G VOL1 Nch ON-Voltage of COUT IOL = 50µA, VDD = 4.55 V 0.4 0.5 V H VOH1 Pch ON-Voltage of COUT IOH = -50µA, VDD = 3.9 V 3.4 3.7 V I VOL2 Nch ON-Voltage of DOUT IOL = 50µA, VDD = 2.0 V 0.2 0.5 V J VOH2 Pch ON-Voltage of DOUT IOH = -50µA, VDD = 3.9 V 3.4 3.7 V K IDD Supply Current VDD = 3.9 V, V- = VRSENS = 0V 3.5 7.0 µA L ISTANDBY Standby Current VDD = 1.9 V 0.04 µA L TDET1 Detection Temperature 1 for External NTC (2) [NTC performance] R5441ZxxxxN / P Resistance:470kΩ±1%(25°C) B-Constant: 4250K±1% R5441ZxxxxV / W Resistance:100kΩ±1%(25°C) B-Constant: 4250K±1% TDET1 -3.0 TDET1 TDET1 +3.0 °C P TREL1 Release Temperature 1 for External NTC (2) TREL1 -3.0 TREL1 TREL1 +3.0 °C P TDET2 Detection Temperature 2 for External NTC (2) TDET2 -3.0 TDET2 TDET2 +3.0 °C Q TREL2 Release Temperature 2 for External NTC (2) TREL2 -3.0 TREL2 TREL2 +3.0 °C Q RTIN Internal Resistance for Temperature Sense R5441ZxxxxN / P 93 150 207 kΩ R R5441ZxxxxV / W 59 96 133 tTS Temperature Sense Time VDD=3.6V 8 10 12 ms R tTDET Detection Temperature Delay Time VDD=3.6V tTDET ×0.80 tTDET tTDET ×1.20 ms P,Q tTREL Release Temperature Delay Time VDD=3.6V 102 128 154 ms P,Q tTNS Temperature Non-sense Time VDD=3.6V R5441ZxxxxN/P 72 90 108 ms R R5441ZxxxxV/W 312 390 468 (1) Refer to Test Circuit diagrams. (2) This specification is guaranteed by design. NRND Product

NO.EA-506-200619 Test Circuits A B C D E F G H I J K L OSCILLOSCOPE VDD DOUT COUT VSS V V RSENS V VDD VSS COUT RSENS VDD VSS COUT RSENS V VDD VSS DOUT RSENS VDD VSS DOUT RSENS V VDD VSS DOUT RSENS V VDD VSS DOUT RSENS A VDD VSS DOUT RSENS V A VDD VSS COUT RSENS V A VDD VSS COUT RSENS V VDD VSS COUT RSENS V VDD VSS COUT RSENS NRND Product

NO.EA-506-200619 M N O P Q R V A VDD VSS DOUT RSENS A VDD VSS RSENS V VDD VSS COUT RSENS TIN V VDD VSS DOUT RSENS TIN V VDD VSS RSENS TIN V A VDD VSS DOUT RSENS NRND Product

NO.EA-506-200619 THEORY OF OPERATION VD1: Overcharge Detector The VD1 monitors the VDD pin voltage (V DD) during charge. When VDD becomes more than or equal to the overcharge detector threshold (VDET1), the VD1 senses the overcharge condition, the COUT pin becomes “low”. The VD1 stops charging by turning off the external Nch.MOSFET. When VDD becomes lower than overcharge detection voltage (VDET1) under the overcharge condition, the release condition may be not enough depending on the characteristics of external components such as MOSFETs and some load must be set to release the overcharge. Then, the COUT pin becomes “high” and the battery charger can recharge by turning on the external Nch.MOSFET. In other words, even if the cell voltage becomes lower than VDET1 under the overcharge condition, the battery is not recharged while a charger is connected to the battery pack. Therefore, there is no hysteresis for VD1. The discharge overcurrent detector (VD3) can determine whether load is set or not. In other words, the V - pin voltage becomes more than or equal to the discharge overcurrent release voltage REL3) by connecting a load and the overcharge condition is released. When VDD becomes more than or equal to V DET1, if a load is connected to the battery pack while the charger is disconnected, the COUT pin will become “low”. Then, a load current might flow via a parasitic diode of the external Nch.MOSFET. If VDD becomes lower than VDET1, the COUT pin will become “high”. Output delay times for overcharge detection and release are internally fixed respectively. If VDD becomes lower than VDET1 within the overcharge detection delay time (tVDET1) after exceeding VDET1, the VD1 will not be in the overcharge condition. As a level shifter is built in a buffer driver for the COUT pin, the “low” level is equal to the voltage level of V- pin. The COUT pin is a CMOS output type and its output level is in between VDD and V-. VD2: Overdischarge Detector The VD2 monitors the VDD pin voltage (VDD) during discharge. When VDD becomes less than or equal to the overdischarge detector threshold (V DET2), the VD2 senses the overdischarg e condition and stop dischargi ng by turning off the external Nch.MOSFE T. The charger must be connected to the battery in order to release from the overdischarge condition while the DOUT pin is "high". If VDD becomes less than VDET2 with connecting the charger, the charge current will flow via a parasitic diode of the external Nch.MOSFET. After that, when VDD becomes more than VDET2, the DOUT pin becomes "high" and the charger can discharge by tuning on the external Nch.MOSFET. A charger operation when a cell voltage is equal to 0 V differs according to the function version. R5441xxxxV: When a cell voltage is equal to 0 V, the COUT pin become "high" by connecting a charger to the battery pack, and the system is allow ed to charge while the voltage of the charger is more than the maximum limit of the minimum operating voltage (VST) for 0 V charging. NRND Product

NO.EA-506-200619 R5441xxxxN/P/W: When VDD is less than or equal to the maximum operation voltage at charging inhibition (VNOCHG), even if a charger is connected to the battery pack, the COUT pin becomes "low" and the system is prohibited to charge. Output delay times for overdischarge detection and release are internally fixed respectively. If VDD becomes more than or equal to VDET2 within the overdischarge detection delay time (tVDET2) after falling below VDET2, the VD2 will not be in the overdischarge condition. When all circuits are halted and shift to the standby state under the overdischarge condition, the supply current would decrease to a minimum (Max. 0.1µA, VDD = 1.9 V +/+-). The DOUT pin is a CMOS output type and its output level is in between VDD and VSS. VD3: Discharge Overcurrent Detector, Short-Circuit Protector The VD3 monitors the voltage level between the V - pin and the RSENS pin when charge and discharge are available with connecting to the battery pack. For some causes such as the external short -circuit, when the voltage level between the V - and the RSENS pins become more than or equal to the discharge overcurrent threshold (VDET3) and less than the short detector threshold (VSHORT), the VD3 senses the discharge overcurrent condition. And, when the voltage level becomes more than or equal to VSHORT, the short-circuit protector works and the DOUT pin becomes “low”. VD3 protects against flowing extremely large current into the circuit by turning off an external Nch.MOSFET. An output delay time for the discharge overcurrent detector is internally fixed. If the voltage between the V - and the RSENS pins becomes less than or equal to V DET3 within the output delay time, the VD3 will not be in the discharge overcurrent condition. In the case of the discharge overcurrent of the auto release type, a pull - down resistor (Typ.45k Ω) is connected between the V - and the VSS pins. After a discharge overcurrent or short circuit protection is detected, by removing a cause of overcurrent or external short -circuit, the voltage level of V- is pulled down to the V SS level through the discharge overcurrent release resistor (R SHORT). Then, when the voltage level between the V - and the VSS pins becomes less than or equal to the o vercurrent threshold voltage, both protection circuits are released automatically. Resistor for release from discharge overcurrent is active when discharge overcurrent or short circuit is detected. The resistor is inactive in normal mode. NRND Product

NO.EA-506-200619 VD4: Charge Overcurrent Detector The VD4 monitors the voltage level between the V - and the RSENS pins when charge and discharge are available with connecting to the battery pack. For example, if the voltage level between V- pin and RSENS pin becomes less than or equal to the charge overcurrent detector threshold (VDET4), the VD4 senses the charge overcurrent condition, and the COUT becomes “low”, the VD4 protects against flowing extremely large current into the circuit by turning off an external Nch.MOSFET. Output delay of the charge overcurrent is internally fixed. Even the voltage level of between the V- and the RSENS pins becomes less than or equal to VDET4, if the voltage is higher than VDET4 within the delay time, the VD4 will not be in the charge overcurrent condition. Output delay time for release from the charge overcurrent is also set internally. The VD4 can be released with disconnecting a charger. DS (Delay Shortening) Function Output delay time of overcharge and overdischarge can be shorter than those setting values by forcing less than or equal to the test shortening mode voltage (Typ. -2.0V) to V- pin. TD: Thermal Detector The R5441Z converts the temperature, which is detected by a built-in resistor and a thermistor connected with TIN pin, to the voltage and monitors it. The thermistor works only a period of 10ms every a cycle of 10 0ms (R5441ZxxxxN/P) / 400ms (R5441ZxxxxV/W) to save the supply current. The COUT pin becomes “Low” when the temperature higher than T DET1 is detected and sustained over t TDET, and charging stops by turning off the external Nch. MOSFET. Likewise, the DOUT pin becomes “Low” when the temperature higher than TDET2 is detected and sustained over tTDET, and discharging stops by turning off it. The COUT or the DOUT pin becomes “High” when the temperature decreases lower than TREL1 or TREL2. NRND Product

NO.EA-506-200619 Timing Diagrams Overcharge Voltage Timing Diagram NRND Product

NO.EA-506-200619 Overdischarge/ Discharge Overcurrent / Short Circuit Timing Diagrams VDET2 VDD DOUT VDD VSS VDD VDET3 VSS Connect Load Connect Charger tVREL2 tVDET2 Open ｔ ｔ Charge/ Discharge Current Charge Current Discharge Current ｔ ｔ tVDET3tVDET2 tVREL2 Excess Discharge Short Vshort tshort tVREL3 tVREL3 RSENS VDD VDET3 ｔ Vshort Connect Load Connect Charger Open NRND Product

NO.EA-506-200619 Thermal protection (Connected Load) Thermal Protection Timing Chart when Connected Load VDD DOUT VDD VSS Temperature monitoring circuit Sense area Non-sense area Connect Load ｔ ｔ Charge/ Discharge Current Charge Current Discharge Current ｔ ｔ Ambient Temperature ｔ TDET1 TREL1 TTS tTDET TTNS COUT VDD ｔ TDET2 TREL2 tTREL TTNS TTNS TTNS TTNS TTS tTRELtTDET Disconnect Load NRND Product

NO.EA-506-200619 Thermal protection (Connected Charger) Thermal Protection Timing Chart when Connected Charger VDD DOUT VDD VSS Temperature monitoring circuit Sense area Non-sense area Connect Charger ｔ ｔ Charge/ Discharge Current Charge Current Discharge Current ｔ ｔ Ambient Temperature ｔ TDET1 TREL1 TTS tTDET TTNS COUT VDD ｔ TDET2 TREL2 tTREL TTNS TTNS TTNS TTNS TTS tTRELtTDET NRND Product

NO.EA-506-200619

APPLICATION INFORMATION

Typical Application Circuit VDD COUT DOUT VSS 0.1µF 1kΩ 330Ω R5441Z NTC 100kΩ TIN RSENS R5441Z Typical Application Circuit R1 and C1 stabilize a supply voltage to the R5441Z. A recommended R1 value is less than 1kΩ. A large value of R1 makes detection voltage shift higher because of conduction current flowed in the R5441 Z. Further, to stabilize the operation of R5441Z , use the C1 with the value of 0.01µ F or more. R1 and R2 can operate also as parts for current limit circuit against reverse charge or applying a charger with overcharging voltage to the R5441Z, battery pack. While small value of R1 and R2 may cause over power dissipation rating of the R5441Z, therefore a total of “R1+R2” should be 1k Ω or more . Besides, if large value of R2 is set, release from overdischarge by connecting a charger might not be possible. Recommended R2 value is equal or less than 10kΩ. R3 is a resistor for sensing an overcurrent. If the resistance value is too large, power loss becomes also large. By the overcurrent, if the R3 is not appropriate, the power loss may be beyond the power dissipation of R3. Choose an appropriate R3 according to the cell specification. The R5441Z requires a NTC thermistor having following characteristics. NTC performance Product Name R5441ZxxxxN / P R5441ZxxxxV / W Vendor muRata muRata Part Number NCP03WF474F05RL NCP03WF104F05RL Resistance 470kΩ±1% (25℃) 100kΩ±1% (25℃) B-Constant 4250K±1% 4250K±1% The typical application circuit diagram is just an example. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is nec essary. NRND Product

Ver. A i PACKAGE DIMENSIONS NRND Product

1. T he products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.

• Aerospace Equipment
• Equipment Used in the Deep Sea
• Power Generator Control Equipment (nuclear, steam, hydraulic, etc.)
• Life Maintenance Medical Equipment
• Fire Alarms / Intruder Detectors
• Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.)
• Various Safety Devices
• Traffic control system
• Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/