R5435X NISSHINBO | Alldatasheet

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Technical content

Li-ION/POLYMER 2/3-CELL PROTECTOR Second protection IC NO.EA-282-230201 OUTLINES R5435x Series are CMOS -based high voltage tolerant over -charge protection ICs for Li -ion/Li-polymer secondary battery. The R5435x can detect overcharge of 2-cell to 3-cell Li-ion/ Li-polymer batteries. The R5435x is consists of 3 voltage detectors, a voltage reference unit, an oscillator, a counter, a delay circuit, a logic circuit. When the over-charge is detected, after the IC internally fixed delay time, the output of COUT becomes "H". After detecting over-charge, when the cell voltage becomes lower than the over -charge released voltage, the over-charge state is released. If all the cells voltages become equal or less than the shutdown detector threshold, all the circuits are halted and shut down, as a result, the consumption current of IC itself (Shutdown current) is ex tremely reduced. By connect short 2 cells other than monitored cell, over-charge and released delay time can be shortened. The output type is CMOS.

FEATURES

(Ta=0 to 60°C) ±25mV

  • Variety of detector threshold Over-charge detector threshold 4.1V-4.55V step of 0.005V (VDET1n) (n=1, 2, 3) Over-charge released voltage V DET1n-0V to VDET1n-0.4V step of 0.05V (VREL1n) (n=1, 2, 3) MIN.3.95V detector threshold, the IC will be into shutdown mode and the consumption current of IC itself becomes extremely small. Even if one of the cells becomes equal or more than shutdown released voltage, the shutdown mode is released. over-charge detector time is shortened from 2sec to 1/50, 4sec and 6sec to 1/80. ex. VC2=VC3=VSS, the delay time for cell 1 is shortened. VC1=VC2, VC3=VSS, the delay time for cell 2 is shortened. V C1=VC2=VC3, the delay time for cell 3 is shortened.

NO.EA-282-230201 BLOCK DIAGRAM VC1 VC2 VC3 VD1-1 VD1-2 VD1-3 Regulator DS Circuit VDD Logic Circuit Oscillator Counter VSS Cout VR VR VR Shutdown Shutdown Shutdown Logic Circuit

NO.EA-282 -230201 SELECTION GUIDE In the R5435Xxxxxx Series, input threshold of over-charge and output delay time can be designated according to the application. Part Number is designated as follows: (ex.) R 5435N 301AA ←Part Number ↑ ↑ ↑ ↑ a b c d Code Contents a Package Type N: TSOT-23-6, K: DFN(PL)1616-6B b Serial Number for the R5435 Series designating input threshold for over-charge detector c Designation of Output delay option d Designation of version symbols.

  • Code List Code VDET1n(V) *1 VREL1n(V) *1 tVDET1(s) tVDTR1(ms) R5435x301AA 4.450 4.150 2 16 R5435x302BA 4.350 3.950 4 16 R5435x303AA 4.350 4.050 2 16 R5435x303CA 4.350 4.050 6 6 R5435x304AA 4.400 4.100 2 16 R5435x305AA 4.300 4.000 2 16 R5435x306BA 4.450 3.950 4 16 *1：n＝1, 2, 3

NO.EA-282-230201 PIN CONFIGURATIONS TSOT-23-6 DFN(PL)1616-6B PIN DESCRIPTION TSOT-23-6 Pin No. Symbol Description

1 VDD VDD Pin

2 VC1 Positive terminal pin for Cell-1

3 VC2 Positive terminal pin for Cell-2

4 VC3 Positive terminal Pin for Cell-3

5 VSS VSS pin. Ground pin for the IC

6 COUT Output pin of over-charge detection

DFN(PL)1616-6B Pin No. Symbol Description

1 VC2 Positive terminal pin for Cell-2

3 VDD VDD Pin

4 COUT Output pin of over-charge detection

5 VSS VSS pin. Ground pin for the IC

6 VC3 Positive terminal Pin for Cell-3

*The tab voltage level of the backside of the package is the substrate level (VSS). Connect the tab to the VSS pin (Recommended) or leave the tab open. 6 5 4 1 2 3 (mark side) 5 4 3 1

NO.EA-282-230201 ABSOLUTE MAXIMUM RATINGS Ta=25°C, VSS=0V Symbol Item Ratings Unit VDD Supply voltage -0.3 to 30 V VC1 VC2 VC3 Input voltage Positive input pin voltage for Cell-1 Positive input pin voltage for Cell-2 Positive input pin voltage for Cell-3 VC2 -0.3 to VC2+6.5 VC3 –0.3 to VC3+6.5 –0.3 to 6.5 V VCOUT Output voltage COUT pin voltage -0.3 to V OH1+0.3 V PD Power dissipation 460 (TSOT-23-6) 640 (PLP1616-6B) mW Ta Operating temperature range -40 to 85 °C Tstg Storage temperature range -55 to 125 °C

NO.EA-282-230201

ELECTRICAL CHARACTERISTICS

  • R5435x301AA Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 3.3 15 V VDET1n CELLn Over-charge threshold (n=1,2,3) Detect rising edge of supply voltage (25°C) 4.430 4.450 4.470 V Detect rising edge of supply voltage (0 to 60°C) *Note1 4.425 4.475 VREL1n CELLn Over-charge released voltage (n=1,2,3) Detect falling edge of supply voltage 4.100 4.150 4.200 V tVDET1 Output delay of over-charge VcELLn=3.9V, VCELL1=3.9V to 4.7V tVREL1 Output delay of release from over-charge VcELLn=3.9V, VCELL1=4.7V to 3.9V VSHT Shutdown detector threshold Detect falling edge 3.1 3.5 3.9 V tVDTR1 Output delay of over-charge timer reset VCELLn=VDET1n+0.050V to VREL1n- 0.100V to VDET1n+0.050V to VREL1n-0.100V 8 16 24 ms VOH1 COUT Pch ON voltage1 IOH=0µA, VCELLn=4.7V (n=1,2,3) 4.0 4.7 5.4 V VOH2 COUT Pch ON voltage2 IOH=-50µA, VCELLn=4.7V(n=1,2,3) VOH1-0.5 VOH1-0.1 V VOL COUT Nch ON voltage IOL=50µA, VCELLn=3.9V (n=1,2,3) 0.1 0.5 V ISHT Shutdown Current VCELLn=3.1V (n=1,2,3) 0.1 µA ISS Supply current VCELLn=3.9V (n=1,2,3) 3.0 5.5 µA *Note1: This specification is guaranteed by design, not mass production tested. *Note2: VCELLn means Cell-n’s voltage. n=1, 2, 3
  • R5435x302BA Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 3.3 15 V VDET1n CELLn Over-charge threshold (n=1,2,3) Detect rising edge of supply voltage (25°C) 4.330 4.350 4.370 V Detect rising edge of supply voltage (0 to 60°C) *Note1 4.325 4.375 VREL1n CELLn Over-charge released voltage (n=1,2,3) Detect falling edge of supply voltage 3.900 3.950 4.000 V tVDET1 Output delay of over-charge VcELLn=3.9V, VCELL1=3.9V to 4.7V tVREL1 Output delay of release from over-charge VcELLn=3.9V, VCELL1=4.7V to 3.9V VSHT Shutdown detector threshold Detect falling edge 3.1 3.5 3.9 V tVDTR1 Output delay of over-charge timer reset VCELLn=VDET1n+0.050V to VREL1n- 0.100V to VDET1n+0.050V to VREL1n-0.100V 8 16 24 ms VOH1 COUT Pch ON voltage1 IOH=0µA, VCELLn=4.7V (n=1,2,3) 4.0 4.7 5.4 V VOH2 COUT Pch ON voltage2 IOH=-50µA, VCELLn=4.7V (n=1,2,3) VOH1-0.5 VOH1-0.1 V VOL COUT Nch ON voltage IOL=50µA, VCELLn=3.9V (n=1,2,3) 0.1 0.5 V ISHT Shutdown Current VCELLn=3.1V (n=1,2,3) 0.1 µA ISS Supply current VCELLn=3.9V (n=1,2,3) 3.0 5.5 µA *Note1: This specification is guaranteed by design, not mass production tested. *Note2: VCELLn means Cell-n’s voltage. n=1, 2, 3

NO.EA-282-230201

  • R5435x303AA Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 3.3 15 V VDET1n CELLn Over-charge threshold (n=1,2,3) Detect rising edge of supply voltage (25°C) 4.330 4.350 4.370 V Detect rising edge of supply voltage (0 to 60°C) *Note1 4.325 4.375 VREL1n CELLn Over-charge released voltage (n=1,2,3) Detect falling edge of supply voltage 4.000 4.050 4.100 V tVDET1 Output delay of over-charge VcELLn=3.9V, VCELL1=3.9V to 4.7V tVREL1 Output delay of release from over-charge VcELLn=3.9V, VCELL1=4.7V to 3.9V VSHT Shutdown detector threshold Detect falling edge 3.1 3.5 3.9 V tVDTR1 Output delay of over-charge timer reset VCELLn=VDET1n+0.050V to VREL1n- 0.100V to VDET1n+0.050V to VREL1n-0.100V 8 16 24 ms VOH1 COUT Pch ON voltage1 IOH=0µA, VCELLn=4.7V (n=1,2,3) 4.0 4.7 5.4 V VOH2 COUT Pch ON voltage2 IOH=-50µA, VCELLn=4.7V (n=1,2,3) VOH1-0.5 VOH1-0.1 V VOL COUT Nch ON voltage IOL=50µA, VCELLn=3.9V (n=1,2,3) 0.1 0.5 V ISHT Shutdown Current VCELLn=3.1V (n=1,2,3) 0.1 µA ISS Supply current VCELLn=3.9V (n=1,2,3) 3.0 5.5 µA *Note1: This specification is guaranteed by design, not mass production tested. *Note2: VCELLn means Cell-n’s voltage. n=1, 2, 3
  • R5435x303CA Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 3.3 15 V VDET1n CELLn Over-charge threshold (n=1,2,3) Detect rising edge of supply voltage (25°C) 4.330 4.350 4.370 V Detect rising edge of supply voltage (0 to 60°C) *Note1 4.325 4.375 VREL1n CELLn Over-charge released voltage (n=1,2,3) Detect falling edge of supply voltage 4.000 4.050 4.100 V tVDET1 Output delay of over-charge VcELLn=3.9V, VCELL1=3.9V to 4.7V tVREL1 Output delay of release from over-charge VcELLn=3.9V, VCELL1=4.7V to 3.9V VSHT Shutdown detector threshold Detect falling edge 3.1 3.5 3.9 V tVDTR1 Output delay of over-charge timer reset VCELLn=VDET1n+0.050V to VREL1n- 0.100V to VDET1n+0.050V to VREL1n-0.100V 2 6 10 ms VOH1 COUT Pch ON voltage1 IOH=0µA, VCELLn=4.7V (n=1,2,3) 4.0 4.7 5.4 V VOH2 COUT Pch ON voltage2 IOH=-50µA, VCELLn=4.7V (n=1,2,3) VOH1-0.5 VOH1-0.1 V VOL COUT Nch ON voltage IOL=50µA, VCELLn=3.9V (n=1,2,3) 0.1 0.5 V ISHT Shutdown Current VCELLn=3.1V (n=1,2,3) 0.1 µA ISS Supply current VCELLn=3.9V (n=1,2,3) 3.0 5.5 µA *Note1: This specification is guaranteed by design, not mass production tested. *Note2: VCELLn means Cell-n’s voltage. n=1, 2, 3

NO.EA-282-230201

  • R5435x304AA Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 3.3 15 V VDET1n CELLn Over-charge threshold (n=1,2,3) Detect rising edge of supply voltage (25°C) 4.380 4.400 4.420 V Detect rising edge of supply voltage (0 to 60°C) *Note1 4.375 4.425 VREL1n CELLn Over-charge released voltage (n=1,2,3) Detect falling edge of supply voltage 4.050 4.100 4.150 V tVDET1 Output delay of over-charge VcELLn=3.9V, VCELL1=3.9V to 4.7V tVREL1 Output delay of release from over-charge VcELLn=3.9V, VCELL1=4.7V to 3.9V VSHT Shutdown detector threshold Detect falling edge 3.1 3.5 3.9 V tVDTR1 Output delay of over-charge timer reset VCELLn=VDET1n+0.050V to VREL1n- 0.100V to VDET1n+0.050V to VREL1n-0.100V 8 16 24 ms VOH1 COUT Pch ON voltage1 IOH=0µA, VCELLn=4.7V (n=1,2,3) 4.0 4.7 5.4 V VOH2 COUT Pch ON voltage2 IOH=-50µA, VCELLn=4.7V (n=1,2,3) VOH1-0.5 VOH1-0.1 V VOL COUT Nch ON voltage IOL=50µA, VCELLn=3.9V (n=1,2,3) 0.1 0.5 V ISHT Shutdown Current VCELLn=3.1V (n=1,2,3) 0.1 µA ISS Supply current VCELLn=3.9V (n=1,2,3) 3.0 5.5 µA *Note1: This specification is guaranteed by design, not mass production tested. *Note2: VCELLn means Cell-n’s voltage. n=1, 2, 3
  • R5435x305AA Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 3.3 15 V VDET1n CELLn Over-charge threshold (n=1,2,3) Detect rising edge of supply voltage (25°C) 4.280 4.300 4.320 V Detect rising edge of supply voltage (0 to 60°C) *Note1 4.275 4.325 VREL1n CELLn Over-charge released voltage (n=1,2,3) Detect falling edge of supply voltage 3.950 4.000 4.050 V tVDET1 Output delay of over-charge VcELLn=3.9V, VCELL1=3.9V to 4.7V tVREL1 Output delay of release from over-charge VcELLn=3.9V, VCELL1=4.7V to 3.9V VSHT Shutdown detector threshold Detect falling edge 3.1 3.5 3.9 V tVDTR1 Output delay of over-charge timer reset VCELLn=VDET1n+0.050V to VREL1n- 0.100V to VDET1n+0.050V to VREL1n-0.100V 8 16 24 ms VOH1 COUT Pch ON voltage1 IOH=0µA, VCELLn=4.7V (n=1,2,3) 4.0 4.7 5.4 V VOH2 COUT Pch ON voltage2 IOH=-50µA, VCELLn=4.7V (n=1,2,3) VOH1-0.5 VOH1-0.1 V VOL COUT Nch ON voltage IOL=50µA, VCELLn=3.9V (n=1,2,3) 0.1 0.5 V ISHT Shutdown Current VCELLn=3.1V (n=1,2,3) 0.1 µA ISS Supply current VCELLn=3.9V (n=1,2,3) 3.0 5.5 µA *Note1: This specification is guaranteed by design, not mass production tested. *Note2: VCELLn means Cell-n’s voltage. n=1, 2, 3

NO.EA-282-230201

  • R5435x306BA Unless otherwise specified, Ta=25°C Symbol Item Conditions Min. Typ. Max. Unit VDD1 Operating input voltage Voltage defined as VDD-VSS 3.3 15 V VDET1n CELLn Over-charge threshold (n=1,2,3) Detect rising edge of supply voltage (25°C) 4.430 4.450 4.470 V Detect rising edge of supply voltage (0 to 60°C) *Note1 4.425 4.475 VREL1n CELLn Over-charge released voltage (n=1,2,3) Detect falling edge of supply voltage 3.900 3.950 4.000 V tVDET1 Output delay of over-charge VcELLn=3.9V, VCELL1=3.9V to 4.7V tVREL1 Output delay of release from over-charge VcELLn=3.9V, VCELL1=4.7V to 3.9V VSHT Shutdown detector threshold Detect falling edge 3.1 3.5 3.9 V tVDTR1 Output delay of over-charge timer reset VCELLn=VDET1n+0.050V to VREL1n- 0.100V to VDET1n+0.050V to VREL1n-0.100V 8 16 24 ms VOH1 COUT Pch ON voltage1 IOH=0µA, VCELLn=4.7V (n=1,2,3) 4.0 4.7 5.4 V VOH2 COUT Pch ON voltage2 IOH=-50µA, VCELLn=4.7V (n=1,2,3) VOH1-0.5 VOH1-0.1 V VOL COUT Nch ON voltage IOL=50µA, VCELLn=3.9V (n=1,2,3) 0.1 0.5 V ISHT Shutdown Current VCELLn=3.1V (n=1,2,3) 0.1 µA ISS Supply current VCELLn=3.9V (n=1,2,3) 3.0 5.5 µA *Note1: This specification is guaranteed by design, not mass production tested. *Note2: VCELLn means Cell-n’s voltage. n=1, 2, 3 RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

NO.EA-282-230201 OPERATION

  • VDET1n / Over-Charge Detectors (n=1, 2, 3) While the cells are charged, the voltage between VC1 pin and VC2 pin (voltage of the Cell-1), the voltage between VC2 pin and VC3 pin (voltage of the Cell-2), and the voltage between VC3 pin and Vss pin (voltage of the Cell-3) are supervised. If at least one of the cells ’ voltage becomes equal or more than the over -charge detector threshold, the over-charge is detected, and an external charge control Nch MOSFET turns on with COUT pin being at "H" level and by cutting a fuse on the charger path, and charge stops. To reset the over-charge and make the COUT pin level to "L" again after detecting over-charge, in such conditions that a time when all the cells’ voltages are down to a level lower than over-charge released voltage. Internal fixed output delay times for over-charge detection, over-charge detector timer reset, release from over- charge exist. Even if one of voltage of the cells keeps its level more than the over-charge detector threshold, and output delay time passes, over -charge voltage is detected. If all the cell voltages become lower than the over - charge detector threshold within the output delay time of over -chare detector by noise or other reasons, the time period is less than over-charge detector timer reset output delay time, the over-charge delay time is accumulated and maintained, and the accumulated delay time reaches the output delay time of over -charge, the over-charge is detected. After detecting over -charge, even if all the cell voltages become equal or less than the released voltage from over-charge, if at least one of the cells voltage becomes higher than the released voltage from over- charge within the output delay time of the release from over-charge, then over-charge is not released. The output type of the COUT pin is CMOS output between VSS and the built-in regulator, and "H" level of COUT pin is the output voltage of the built-in regulator. (Typ. 4.7V)
  • Shutdown Function The voltage between VC1 pin and VC2 pin (the voltage of Cell-1), the voltage between VC2 pin and VC3 pin (Cell- 2 voltage), and the voltage between VC3 pin and VSS pin (Cell-3 voltage) are supervised. If all the cells voltages become equal or less than the shutdown detector threshold, all the circuits are halted and shut down, as a result, the consumption current of IC itself (Shutdown current) is extremely reduced. (Max. 0.1µA) After detecting shutdown, at least one of the cell voltages becomes equal or more than the shutdown detector threshold, the shutdown state is released.
  • DS (Delay Shortening) Function By connect short 2 cells other than monitored cell, over-charge and released delay time can be shortened. Table of the cell of delay time shortened and direct wiring positions Delay time shortened CELL Direct wiring positions CELL1 VC2 pin and VC3 pin, VC3 pin and VSS pin CELL2 VC1 pin and VC2 pin, VC3 pin and VSS pin CELL3 VC1 pin and VC2 pin, VC2 pin and VC3 pin
  • 2-cell/ 3-cell protection alternative When the IC should be used as a 2-cell protection IC, connect short VC3 pin and VSS pin.

NO.EA-282-230201 TIMING CHART

  • Over-charge operation VDET11 VREL11 VCELL1 t tVREL1 tVDET1 tVDET1 VR VSS COUT tVREL1 t VDET12 VREL12 VCELL2 t VDET13 VREL13 VCELL3 t Charge/Discharge Current Charge Current Discharge Current t Connect Charger Connect Load

NO.EA-282-230201 TYPICAL APPLICATIONS (1) Circuit example (3-cell protection) (2) Circuit example (2-cell protection) *In terms of the order of connecting cells, the positive terminal of the cell 1 should be the last. Otherwise, COUT may output "H" tentatively, and the fuse may be fused. R5435 VC1 VC2 VC3 VSS Cell1 Cell2 Cell3 VDD COUT normalyL actH SC PROTECTOR RVDD CVDD R5435 VC1 VC2 VC3 VSS Cell1 Cell2 VDD COUT normalyL actH SC PROTECTOR RVDD CVDD

NO.EA-282-2302 01

  • External parts ratings Symbol Typ. Unit Range RVDD 100 Ω 100～1000 R1 1000 Ω 330～1000 R2 1000 Ω 330～1000 R3 1000 Ω 330～1000 CVDD 0.1 uF 0.01～1 C1 0.1 uF 0.01～1 C2 0.1 uF 0.01～1 C3 0.1 uF 0.01～1 Technical Notes The voltage fluctuation is stabilized with R VDD and CVDD. I f a small RVDD is set, in the case of the large transient may happen to the cell voltage, by the flowing current, the IC may be unstable. If a large R VDD is set, by the consumpt ion current of the IC itself, the voltage difference between V DD pin and V C1 pin is generated, and unexpected operation may result. Therefore, the appropriate value range of RVDD is from 100Ω to 1kΩ. To make a stable operation of the IC, the appropriate value range of CVDD is from 0.01µF to 1.0µF. The voltage fluctuation is stabilized with R1 to R3 and C1 to C3. If a R1 to R3 is too large, by the conduction current at detection, the detector threshold may shift higher. Therefore, the appropriate value range of R1 to R3 is equal or less than 1kΩ. To make a stable operation of the IC, the appropriate value range of C1 to C3 is 0.01µF or more. The typical application circuit diagrams are just examples. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary. Over-voltage and the over current beyond the absolute maximum rating should not be forced to the pr otection IC and external components. During the time until the fuse is open after detecting over -charge, a large current may flow through the FET. Select an FET with large enough current capacity in order to endure the large current. Our company cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in our products. If technical notes are not complied with the circuit which is used our products, we are not responsible for any damages and any accidents. To connect t he SC protector, connect the SC protector to the cell must be the last. *SC protector Contact: Sony Chemical & Information Device Company Ltd. Zip code 141-0032 1-11-2 Osaki, Shinagawa, Tokyo Gate-city Osaki East Tower 8F Phone 03-5435-3946 http://www.sonycid.jp

NO.EA-282-230201 TEST CIRCUITS A VC1 VC2 VSS VDD COUT V V OSCILLOSCOPE V VC3 B VC1 VC2 VSS VDD COUT V OSCILLOSCOPE VC3 C VC1 VC2 VSS VDD COUT V V V VC3 A A A D VC1 VC2 VSS VDD COUT VC3 V E VC1 VC2 VSS VDD COUT VC3 V A F VC1 VC2 VSS VDD COUT VC3 V A

NO.EA-282-230201 Typical Characteristics were obtained with using those above circuits: Test Circuit A: Typical characteristics 1), 2) Test Circuit B: Typical characteristics 3), 4), 6) Test Circuit C: Typical characteristics 5) Test Circuit D: Typical characteristics 7) Test Circuit E: Typical characteristics 8) Test Circuit F: Typical characteristics 9) Test Circuit G: Typical characteristics 10), 11) G VC1 VC2 VSS VDD COUT VC3 A

NO.EA-282-230201 TYPICAL CHRACTERSTICS Part1．vs. Temperature 1） Over-charge voltage Threshold (CELLn) vs. Temperature 2） Over-charge Released Voltage (CELLn) vs. Temperature ） Output Delay of Over-charge vs. Temperature ） Output Delay of Release from Over-charge vs. Temperature 5） Shutdown Detector Threshold vs. Temperature R5435N301AA VCELLn=3.9V (n=1,2,3) R5435N301AA VCELLn=3.9V (n=1,2,3) VCELLn=3.9V (n=2,3), V CELL1=3.9V→4.7V 4.420 4.430 4.440 4.450 4.460 4.470 4.480 -60 -40 -20 0 20 40 60 80 100 Temperature(℃) VDET1n(V) 4.050 4.100 4.150 4.200 4.250 -60 -40 -20 0 20 40 60 80 100 Temperature(℃) VREL1n(V) 0.5 1.5 2.5 3.5 -60 -40 -20 0 20 40 60 80 100 Temperature(℃) tVDET1(s) -60 -40 -20 0 20 40 60 80 100 Temperature(℃) tVREL1(ms) R5435N301AA R5435N301AA R5435N301AA R5435N302BA -60 -40 -20 0 20 40 60 80 100 Temperature(℃) tVDET1(s) 2.800 3.000 3.200 3.400 3.600 3.800 4.000 200 -60 -40 -20 0 20 40 60 80 100 Temperature(℃) VSHT1n(V) VCELLn=3.9V (n=2,3), V CELL1=3.9V→4.7V VCELLn=3.9V (n=2,3), V CELL1=4.7V→3.9V VCELLn=3.1V (n=1,2,3)

NO.EA-282-230201 6） Output Delay of Over-charge Timer Reset vs. Temperature 7 ) COUT Pch ON Voltage 1 vs. Temperature ） C OUT Pch ON Voltage 2 vs. Temperature 9） C OUT Nch ON Voltage vs. Temperature ） Shutdown Current vs. Temperature 11） Supply Current vs. Temperature R5435N301AA -60 -40 -20 0 20 40 60 80 100 Temperature(℃) tVTR(ms) R5435N301AA VCELLn=4.7V (n=1,2,3), I OH=0uA R5435N301AA R5435N301AA VCELLn=3.9V (n=1,2,3), I OL=50uA R5435N301AA VCELLn=3.1V (n=1,2,3) R5435N301AA VCELLn=3.9V (n=1,2,3) 0.1 0.2 0.3 0.4 0.5 -60 -40 -20 0 20 40 60 80 100 Temperature(℃) VOL(V) 4.2 4.4 4.6 4.8 5.2 5.4 -60 -40 -20 0 20 40 60 80 100 Temperature(℃) VOH1(V) -0.5 -0.4 -0.3 -0.2 -0.1 -60 -40 -20 0 20 40 60 80 100 Temperature(℃) VOH2-VOH1(V) 0.02 0.04 0.06 0.08 0.1 -60 -40 -20 0 20 40 60 80 100 Temperature(℃) Isht(uA) -60 -40 -20 0 20 40 60 80 100 Temperature(℃) Iss(uA) VCELLn=3.9V (n=2,3), V CELL1=4.7V→3.9V→4.7V VCELLn=4.7V (n=1,2,3), I OH=-50uA

NO.EA-282-230201 Part2．Delay Time dependence on VDD 1) Output Delay of Over-charge vs. VDD 2) Output Delay of Release from Over-charge vs. V DD 1.5 2.5 VCELLn(V) tVDET1(s) R5435N301AA n=2,3 3.5 4.5 VCELLn(V) tVDET1(s) n=2,3 R5435N302BA 14.5 15.5 16.5 17.5 VCELLn(V) tVREL1(ms) n=2,3 R5435N301AA

NO.EA-282-2302 01 Part3．Supply Current dependence on VDD (R5435N301AA) 3-cell protector Supply Current vs. VDD 0.5 1.5 2.5 3.5 0 5 10 15 20 VDD(V) Supply Current Iss(uA) 0.1µF 0.1µF 0.1µF 1kΩ 1kΩ 1kΩ R5435 VC1 CELL1 CELL2 CELL3 VDD C OUT Normaly L Act H 100Ω 0.1µF A VC2 VC3 VSS

NO.EA-282-2302 01 Part4. Over-charge detector, Release voltage from Over-charge dependence on External Resistance value (R5435N301AA) Over-charge Detector/Released Voltage from Over-charge vs. R1 (CELL1) 4.42 4.43 4.44 4.45 4.46 4.47 4.48 0 500 1000 1500 2000 R1(Ω) VDET11(V) 4.13 4.14 4.15 4.16 4.17 4.18 4.19 VDET11 VREL11 0.1µF 0.1µF 0.1µF 1kΩ 1kΩ R5435 VC1 CELL1 CELL2 CELL3 COUT Normaly L Act H 100Ω 0.1µF VC2 VC3 VSS VDD

NO.EA-282-2302 01 TECHNICAL NOTES A peripheral component or the device mounted on PCB should not exceed a rated voltage, a rated current or a rated power. When designing a peripheral circuit, please be fully aware of the following points.

  • Please ev aluate the product at the PCB level before use, as some symptoms may remain that cannot be confirmed by the evaluation at the IC level.
  • When using any coating or underfill to improve moisture resistance or joining strength, evaluate them adequately before using. In certain materials or coating conditions, corrosion by contained constituents, current leakage by moisture absorption, crack and delamination by physical stress can happen. If the curing temperature of the coating material or underfill material exceeds the absolute maximum rating, the electrical characteristics of this product may change.
  • When performing X-ray inspection in mass production process and evaluation build stage such as the product functions and characteristics confirmation, please confirm X-ray irradiation does not exceed 1.5Gy (absorbed dose for air).

POWER DISSIPATION TSOT-23-6 Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following conditions are used in this measurement. Measurement Conditions Item Standard Test Land Pattern Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Double-Sided Board) Board Dimensions 40 mm × 40 mm × 1.6 mm Copper Ratio Top Side: Approx. 50% Bottom Side: Approx. 50% Through-holes φ 0.5 mm × 44 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Standard Test Land Pattern Power Dissipation 460 mW Thermal Resistance (θja) θja = 217°C/W Thermal Characterization Parameter (ψjt) ψjt = 40°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 100 200 300 400 500 600 0 25 50 75 100 125 Power Dissipation PD (mW) Ambient Temperature (°C) 460

PACKAGE DIMENSIONS TSOT-23-6 Ver. A i 2.9±0.2 0.95 0.85±0.10 0 ∼ 0.1 0.4-0.05 +0.10 0.12 M 0.4±0.2 1.6-0.1 +0.2 2.8±0.2 6 4 1 2 3 0.125-0.025 +0.100 0.10 SS 0∼15°

Ver. A i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number 6 4 1 2 3 ①②③④⑤ R5435N (TSOT-23-6) Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or distributor bef ore attempting to use AOI. R5435N Part Marking List Product Name    R5435N301AA 800 R5435N302BA 801 R5435N303AA 802 R5435N304AA 803 R5435N305AA 804 R5435N306BA 805 R5435N303CA 806 R5435N306CA 807 R5435N304CA 808 R5435N307CA 809 R5435N312CA 810

POWER DISSIPATION DFN(PL)1616-6B Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following conditions are used in this measurement. Measurement Conditions Standard Test Land Pattern Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Double-Sided Board) Board Dimensions 40 mm × 40 mm × 1.6 mm Copper Ratio Top Side: Approx. 50% Bottom Side: Approx. 50% Through-holes φ 0.54 mm × 26 pcs Measurement Result (Ta = 25°C , T jmax = 125°C) Standard Test Land Pattern Power Dissipation 640 mW Thermal Resistance θja = (125 − 25°C) / 0.64 W = 156°C/W θjc = 23 °C/W Power Dissipation PD (mW) 700 600 500 400 300 200 100 0 25 50 75 100 125 150 Ambient Temperature (°C) Standard Test Land Pattern 640 IC Mount Area (m m) Power Dissipation vs. Ambient Temperature Measurement Board Pattern

PACKAGE DIMENSIONS DFN(PL)1616-6B Ver. B i ∗The tab on the bottom of the package shown by blue circle is a substrate potential (GND). It is recommended that this tab be connected to the ground plane on the board but it is possible to leave the tab floating. DFN(PL)1616-6B Package Dimensions (Unit: mm)

Ver. A i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5435K [DFN(PL)1616-6B] Part Markings NOTICE There can be variation in the marking when different AOI (Au tomated Optical Inspection) equipment i s used. In the case of recognizing the marking characteristic with AOI, please contact our sales or distributor before attempting to use AOI. R5435KxxxA Part Marking List Product Name  R5435K301AA DM01 R5435K302BA DM02 R5435K303AA DM03 R5435K304AA DM04 R5435K305AA DM05 R5435K306BA DM06 R5435K303CA DM07 R5435K306CA DM08 R5435K304CA DM09 R5435K307CA DM10 ①②③ ④⑤⑥

  1. T he products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.
  • Aerospace Equipment
  • Equipment Used in the Deep Sea
  • Power Generator Control Equipment (nuclear, steam, hydraulic, etc.)
  • Life Maintenance Medical Equipment
  • Fire Alarms / Intruder Detectors
  • Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.)
  • Various Safety Devices
  • Traffic control system
  • Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/