R5110X NISSHINBO | Alldatasheet
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Technical content
36V System Power Supply with Watchdog Timer No. EA-326-231121 OUTLINE R5110x is the system power supply and supervisor IC based on the high- voltage CMOS process technology, and has high accuracy and ultra low supply current voltage. R5110x consists of a voltage regulator (VR), a voltage detector (VD), and a normal / window type of watchdog timer (WDT) in a chip, and can provide three functions of the system power supply, the supply voltage supervisor, and the supervision of system’s miss operation. Voltage Regulator allows the output current of 500 mA. And, VR has the inrush current protection circuit for rising pulse (Typ.400 mA or less). Voltage Detector outputs a reset signal when a reduction of supply voltage (SENSE / V OUT) is detected, and the reset signal is used as system reset. The detection voltage is internally fixed in an IC. And, the delay time is adjustable with an external capacitor because VD has the built-in release delay circuit (the power -on reset circuit). When the supply voltage is higher than the release output voltage, VD maintains the reset state during the delay time. The output type of RESETB and D OUT are Nch open- drain. In addition, R5110xxx2C and R5110xxx2D (Detector with SENSE pin) have a manual reset (MR) pin. Watchdog Timer detects the microprocessor output pulse. In addition to the normal type of WDT (R5110Sxx1A / R5110xxx2C) that outputs a reset signal when the detected pulse period is longer than normal, R5110x supports the window type of WDT (R5110Sxx1B / R5110xxx2D) that outputs a reset signal when the detected pulse period is shorter or longer. RESETB outputs the reset signal when using R5110Sxx1A / R5110Sxx1B, and the WDO pin outputs “L” as the reset signal when using R5110 xxx2C / R5110xxx2D. The output type of WDO is Nch open- drain. In addition, R5110xxx2C and R5110xxx2D have an inhibiting (INH) pin to stop the watchdog timer’s monitoring function. The time out period of Watchdog Timer is also adjustable with an external capacitor. R5110x supports the packages of HSOP-8E, HSOP-18 and HQFN0808-28.
FEATURES
- Operating Voltage Range (Maximum Rating) ········ 3.5 V to 36.0 V (50.0 V) <Voltage Regulator (VR)>
No. EA-326-231121 <Voltage Detector (VD)> Delay Time is adjustable with an external capacitor. <Watchdog Timer (WDT)> Each time is adjustable with an external capacitor.
APPLICATIONS
- Power source for microprocessors
No. EA-326-231121 SELECTION GUIDE R5110x user selectable options (Watchdog Timer type, Detector type, and additional functions with using MR / INH / WDO pins) are as follows: Product Name Package Quantity per Reel Pb Free Halogen Free R5110Sxx1∗-E2-FE HSOP-8E 1,000 pcs Yes Yes R5110Sxx2∗-E2-FE HSOP-18 1,000 pcs Yes Yes R5110Lxx2∗-TR-FE HQFN0808-28 2,000pcs Yes Yes xx: Specify the set output voltage (VSET) and the set detector threshold (-VSET) by using serial numbers starting from 01. Refer to “Mark Specification Table” for details. Detector Monitoring Voltage Package Watchdog Timer Type MR / INH / WDO pins RESETB/ DOUT pins A VOUT HSOP-8E Normal − RESETB B VOUT HSOP-8E Window − RESETB C SENSE HSOP-18 HQFN0808-28 Normal Yes DOUT D SENSE HSOP-18 HQFN0808-28 Window Yes DOUT
No. EA-326-231121 BLOCK DIAGRAMS R5110Sxx1A / R5110Sxx1B TW VDD SCK RESETB CLOCK DETECTOR CD VOUT CE GND ON/OFF Circuit Thermal shut down Current Limit Internal Supply Voltage WATCHDOG TIMER (R5110Sxx1A) WINDOW WATCHDOG TIMER (R5110Sxx1B) VOUT R5110xxx2C / R5110xxx2D TW VDD SCK DOUT CLOCK DETECTOR INH CD VOUT CE SENSE GND WDO ON/OFF Circuit Thermal shut down Current Limit Internal Supply Voltage WATCHDOG TIMER (R5110xxx2C) WINDOW WATCHDOG TIMER (R5110xxx2D) MR
No. EA-326-231121 18 17… …11 10 1 2 … …8 9 5 8 6 4 2 1 3 8 6 5 7 1 3 4 2 PIN DESCRIPTION
- HSOP-8E • HSOP-18 • HQFN0808-28 Top View Bottom View Top View Bottom View Top View Bottom View HSOP-8E (R5110Sxx1A / R5110Sxx1B) Pin No. Symbol Description
1 VDD Supply Voltage pin
2 CE Chip Enable pin (Active "H")
3 GND GND pin
4 CD VD Release Delay Time Set pin
5 TW WDT Monitoring Time Set pin
6 SCK WDT Pulse Input pin
7 RESETB(1) Reset Output pin (Active "L"), Nch Open Drain Output type
8 VOUT VR Output pin
∗ The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate level). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left open. (1) RESETB pin is required to pull up to a suitable voltage with an external resistor.
No. EA-326-231121 HSOP-18 (R5110Sxx2C / R5110Sxx2D) Pin No. Symbol Description
3 NC No Connection
4 NC No Connection
5 GND GND pin
6 NC No Connection
7 NC No Connection
8 CD VD Release Delay Time Set pin
9 MR Manual Reset pin (Active "L")
10 TW WDT Monitoring Time Set pin
11 INH Inhibition pin (Active "L")
12 SCK WDT Pulse Input pin
13 WDO(1) WDT Output pin, Nch Open Drain Output type
14 DOUT(2) Reset Output pin (Active "L"), Nch Open Drain Output type
15 SENSE VD Voltage SENSE pin
16 NC No Connection
17 NC No Connection
18 VOUT VR Output pin
∗ The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate level). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left open. (1) WDO pin is required to pull up to a suitable voltage with an external resistor. (2) DOUT pin is required to pull up to a suitable voltage with an external resistor.
No. EA-326-231121 HQFN0808-28 (R5110Lxx2C / R5110Lxx2D) Pin No. Symbol Description
1 GND GND pin
2 NC No Connection
3 VDD Supply Voltage pin
5 CE Chip Enable pin (Active "H")
7 GND GND pin
8 GND GND pin
9 GND GND pin
10 CD VD Release Delay Time Set pin
11 MR Manual Reset pin (Active "L")
12 TW WDT Monitoring Time Set pin
13 INH Inhibition pin (Active "L")
14 GND GND pin
15 GND GND pin
16 SCK WDT Pulse Input pin
18 WDO(1) WDT Output pin, Nch Open Drain Output type
19 DOUT(2) Reset Output pin (Active "L"), Nch Open Drain Output type
20 SENSE VD Voltage SENSE pin
21 GND GND pin
22 GND GND pin
23 NC No Connection
24 NC No Connection
25 NC No Connection
26 VOUT VR Output pin
27 NC No Connection
28 GND GND pin
∗ The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate level). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left open. (1) WDO pin is required to pull up to a suitable voltage with an external resistor. (2) DOUT pin is required to pull up to a suitable voltage with an external resistor.
No. EA-326-231121 PIN EQUIVALENT CIRCUIT DIAGRAMS <VOUT pin> <CE pin> VOUT Driver CE <CD pin> <RESETB pin(R5110Sxx1x) / DOUT pin(R5110xxx2x)> CD Internal Supply Voltage Driver RESETB/DOUT Driver <SENSE pin (R5110xxx2x)> <MR pin (R5110xxx2x)> SENSE MR Internal Supply Voltage <SCK pin> <TW pin> SCK Internal Supply Voltage TW Internal Supply Voltage Driver <INH pin (R5110xxx2x)> <WDO pin (R5110xxx2x)> INH Internal Supply Voltage WDO Driver
No. EA-326-231121 ABSOLUTE MAXIMUM RATINGS Symbol Item Ratings Unit VIN Input Voltage −0.3 to 50 V Peak Voltage(1) 60 V VCE CE Pin Input Voltage −0.3 to 50 V VOUT Output Voltage −0.3 to VIN +0.3 ≤ 50 V VCD CD Pin Output Voltage -0.3 to 7.0 V VTW TW Pin Output Voltage -0.3 to 7.0 V VRESETB RESETB Pin Output Voltage -0.3 to 7.0 V VDOUT DOUT Pin Output Voltage -0.3 to 7.0 V VWDO WDO Pin Output Voltage -0.3 to 7.0 V VSCK SCK Pin Input Voltage -0.3 to 7.0 V VINH INH Pin Input Voltage -0.3 to 7.0 V VMR MR Pin Input Voltage -0.3 to 7.0 V VSENSE SENSE Pin Input Voltage -0.3 to 7.0 V PD Power Dissipation (2) HSOP-8E (JEDEC STD.51) 2900 mW HSOP-18 (JEDEC STD.51) 3100 HQFN0808-28 (JEDEC STD.51) 4600 Tj Junction Temperature −40 to 125 °C Tstg Storage Temperature −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITIONS Symbol Item Rating Unit VIN Input Voltage 3.5 to 36.0 V VCE CE Pin Input Voltage 0 to 36.0 V VSCK SCK Pin Input Voltage 0 to 5.5 V VINH INH Pin Input Voltage 0 to 5.5 V VMR MR Pin Input Voltage 0 to 5.5 V VSENSE SENSE Pin Input Voltage 0 to 5.5 V Ta Operating Temperature Range −40 to 105 °C RECOMMENDED OPERATING CONDITONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such ratings by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Within application time of 200ms (2) Refer to POWER DISSIPATION for detailed information.
No. EA-326-231121
ELECTRICAL CHARACTERISTICS
CIN = COUT = 0.1 µF, VIN = 14 V, unless otherwise noted. The specification in i s checked and guaranteed by design engineering at −40°C ≤ Ta ≤ 105°C. R5110xxxxx ( Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit ISS Supply Current IOUT = 0 mA 25 38 µA Istandby Power Consumption (on standby) VIN = 36 V, VCE = 0 V 0.2 4 .0 µA IPD CE Pull-downConstant Current VCE = 5 V 0.2 0. 6 µA VCE = 36 V 0.5 1. 3 µA VCEH CE Input Voltage "H" 2. 2 36 V VCEL CE Input Voltage "L" 1. 0 V VR Part ( Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage IOUT = 1 mA ×0.985 ×1.015 V ∆VOUT/∆IOUT Load Regulation VIN = VSET + 2.0 V 1mA ≤ IOUT ≤ 500 mA -20 0 30 mV VDIF Dropout Voltage IOUT = 500 mA VSET = 1.8 1.70 1.90 V VSET = 2.5 1.00 1.55 V VSET = 3.3 0.60 1.20 V VSET = 5.0 0.50 0.95 V ∆VOUT/∆VIN Line Regulation 3.5V ≤ VSET + 0.5V ≤ VIN ≤ 36V IOUT = 1 mA 0.01 0.0 2 %/V ILIM Output Current Limit VIN = VSET + 3.0 V 500 750 1000 mA ISC Short current Limit VIN = 5 V, VOUT = 0 V 35 80 135 mA TTSD Thermal Shutdown Temperature Junction Temperature 150 165 °C TTSR Thermal Shutdown Release Temperature Junction Temperature 125 140 °C RLOW VOUT Low Output Nch Tr.ON Resistance VCE = 0 V, VOUT = 0.1 V 3.2 7.0 kΩ
No. EA-326-231121 CIN = COUT = 0.1µF, VIN = 14 V, unless otherwise noted. The specification in i s checked and guaranteed by design engineering at −40°C ≤ Ta ≤ 105°C. VD Part ( Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit -VDET Detector Threshold VOUT Set Detector Threshold: x0.982 x1.018 V VHYS Detector Threshold Hysteresis (-VDET) x0.01 (-VDET) x0.02 (-VDET) x0.03 V tdelay Release Output Delay Time (Power-On Reset) CD = 0.22 µF 194 242 290 ms VRESETB RESETB Pull-up Voltage R5110Sxx1A / R5110Sxx1B 5.5 V VDOUT DOUT Pull-up Voltage R5110xxx2C / R5110xxx2D 5.5 V IOUTNRSTB Nch. Output Current (RESETB Output Pin) R5110Sxx1A / R5110Sxx1B VIN = 3.5 V, VRESETB = 0.1 V 0.7 1.5 mA ILEAKRSTB Nch. Leakage Current (RESETB Output Pin) R5110Sxx1A / R5110Sxx1B VRESETB = 5.5 V 0.3 µA IOUTDOUT Nch. Output Current (DOUT Output Pin) R5110xxx2C / R5110xxx2D VIN = 3.5 V, VDOUT = 0.1 V 0.7 1.5 mA ILEAKDOUT Nch. Leakage Current (DOUT Output Pin) R5110xxx2C / R5110xxx2D VDOUT = 5.5 V 0.3 µA VMRH MR Input “H” 1.5 5.5 V VMRL MR Input “L” 0 0.6 V MRW MR Input Pulse Width 2 µs RMR MR Pull-up Resistance 50 110 160 kΩ RLCD CD Pin Discharge Nch Tr.ON Resistance VCE = 0 V, VCD = 0.1 V 7.5 20 kΩ
No. EA-326-231121 CIN = COUT = 0.1 µF, VIN = 14 V, unless otherwise noted. The specification in i s checked and guaranteed by design engineering at −40°C ≤ Ta ≤ 105°C. WDT Part ( Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit tOW Open Window Time R5110Sxx1B/ R5110xxx2D CTW = 10 nF 14.4 18.0 21.6 ms tCW Closed Window Time 14.4 18.0 21.6 ms tOWL Long Open Window Time 36.0 72.0 108.0 ms tIGN Ignoring Time CTW = 10 nF 14.4 18.0 21.6 ms tWD Monitoring Time R5110Sxx1A/ R5110xxx2C CTW = 10 nF 14.4 18.0 21.6 ms tWR Reset Time CTW = 10 nF 7.6 9.5 11. 4 ms VSCKH SCK Input “H” 1.5 5.5 V VSCKL SCK Input “L” 0 0.65 V VINHH INH Input ”H” 1.5 5.5 V VINHL INH Input “L” 0 0.6 V RINH INH Pull-up Resistance 50 110 160 kΩ tSCKWH SCK Minimum Input Pulse Width “H” VSCKL = 0.5, VSCKH = 1.6 500 ns tSCKWL SCK Minimum Input Pulse Width “L” VSCKL = 0.5, VSCKH = 1.6 1500 ns VWDO WDO Pull-up Voltage 5.5 V IOUTNWDO Nch. Output Current (WDO Output Pin) R5110xxx2C / R5110xxx2D VIN = 3.5 V, VDS = 0.1 V 0.7 1.5 mA ILEAKWDO Nch. Leakage Current (WDO Output Pin) R5110xxx2C / R5110xxx2D VWDO = 5.5 V 0.3 µA RLTW CTW Discharge Nch Tr.ON Resistance VCE = 0 V, VCTW = 0.1 V 7.5 20 kΩ All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C).
No. EA-326-231121 The specification in is checked and guaranteed by design engineering at −40°C ≤ Ta ≤ 105°C. R5110xxxxx (-FE) Product-specific Electrical Characteristics VR Part ( Ta = 25°C) Product Name VOUT [V] VDIF [V] VD Part ( Ta = 25°C) Product Name -VDET [V] VHYS [V]
No. EA-326-231121 OPERATION DESCRIPTION TIMING CHART R5110Sxx1A / R5110Sxx1B Voltage Detector (2) (1) (3) (4) (3) VIN VOUT VCD VRESETB +VDET -VDET tdelay tdelay VTCD VDDL Undefined Undefined R5110Sxx1A / R5110Sxx1B VD Timing Chart (1) When t he V OUT pin voltage (V OUT) becomes more than the release voltage (+V DET), the RESETB pin voltage (VRESETB) becomes “H” after the release output delay time (tdelay). (2) When the detect output delay time is less than 30 µs (Typ.) even if VOUT becomes lower than the detector threshold (-VDET), the voltage detector (VD) does not go into the detecting state. (3) When VOUT becomes lower than -VDET, VRESETB becomes "L" after the detect output delay time (Typ.30 µs) and the VD goes into the detecting state. (4) When VOUT becomes more than +VDET. VRESETB becomes "H" after the release output delay time. (VTCD = Typ.1 V)
No. EA-326-231121 R5110xxx2C / R5110xxx2D Voltage Detector (2) VIN VSENSE VCD VDOUT VMR +VDET -VDET VTCD tdelay tdelay tdelay -VDET VDDL Undefined Undefined R5110xxx2C / R5110xxx2D VD Timing Chart (1) When the SENSE pin voltage (VSENSE) becomes more than the release voltage (+VDET), the DOUT pin voltage (VDOUT) becomes “H” after the release output delay time (tdelay). (2) When the detect output delay time is 30 µ s (Typ.) or less even if V SENSE becomes lower than the detector threshold (-VDET), the voltage detector (VD) does not go into the detecting state. (3) When VSENSE becomes lower than -VDET, VDOUT becomes "L" after the detect output delay time (Typ. 30 µs) and the VD goes into the detecting state. (4) When VSENSE becomes more than +VDET, VDOUT becomes “H” after the release output delay time. (VTCD = Typ.1 V) (5) When the MR pin voltage (VMR) becomes “L”, VDOUT is fixed to "L". (6) When VMR becomes “L” to “H”, VDOUT becomes “H” after the release output delay time.
No. EA-326-231121 R5110Sxx1A Watchdog Timer (Normal Type) R5110Sxx1A WDT Timing Chart (1) When t he V OUT pin voltage (V OUT) becomes more than the release voltage (+V DET), the RESETB pin voltage (VRESETB) becomes “H” after the release output delay time (tdelay) and the watchdog timer (WDT) starts monitoring a pulse. After that, the TW pin voltage (VTW) repeats charge and discharge. As a result, a sawtooth wave is generated. The WDT has three states: Ignoring, Reset, and Monitoring. In each state, the TW pin is charged from 0 V or TWFREFL (Typ.0.08 V). (2) After the WDT starts, the WDT is in an ignoring state until VTW is charged up to TWVREFH (Typ.2 V). So, a pulse to the SCK pin is ignored during the ignoring state. (3) When charging VTW up to TWVREFH has completed, the TW pin starts discharging and the WDT goes into a monitoring state. (4) When a pulse is not sent to the SCK pin before V TW reaches TWVREFH during the monitoring state, the TW pin starts discharging and the WDT goes into a reset state. During the reset state, VRESETB becomes “L. (5) When VTW is charged up to TWVREFH during the reset state, the TW pin starts discharging and the WDT goes into the ignoring state. (6) When a pulse is sent to the SCK pin before VTW reaches TWVREFH during the monitoring state, the TW pin start discharging and the WDT goes into the next open window state. IGN WD RST IGN WD WD RST IGN WD (1) (3) (4) (5) (2) (6) VOUT +VDET VIN -VDET tIGN tWD tWR <tWD TWVREFH VSCK tIGN tWD tWR tIGNtdelay VTW TWVREFL VRESETB Undefined -VDET VDDL Undefined
No. EA-326-231121 R5110Sxx1B Watchdog Timer (Window Type) IGN LOW CW RST IGN LOW CW OW RST IGN LOW (2) (4) (5) VOUT VRESETB VSCK +VDET VIN -VDET TWVREFH tIGN <tOWL <tCW tWR tCW tOWtdelay tWRtIGN <tOWL tIGN VTW TWVREFL Undefined VDDL Undefined R5110Sxx1B WDT Timing Chart (1) When the VOUT pin voltage (VOUT) becomes more than the release voltage (+VDET), the RESETB pin voltage (VRESETB) becomes “H” after the release output delay time ( tdelaly) and the watchdog timer (WDT) starts monitoring a pulse. After that, th e TW pin voltage (V TW) repeats charge and discharge. As a result, a sawtooth wave is generated. The WDT has four states: Ignoring, Reset, Open Window, and Closed Window. In each state, the TW pin is charged from 0 V or TWVREFL (Typ.0.08 V). (2) After WDT starts, the WDT is in an ignoring state until VTW is charged up to TWVREFH (Typ.2 V). So, a pulse to the SCK pin is ignored during the ignoring state. (3) When VTW is charged up to TWVREF H during the ignoring state, the TW pin starts discharging and the WDT goes into an open window state. This open window state is four times longer than the normal open window state. (4) When a pulse is sent to the SCK pin before VTW reaches TWVREFH during the open window state, the TW pin starts discharging and the WDT goes into a closed window state. (5) When a pulse is sent to the SCK pin before VTW reaches TWVREF during the closed window state, the TW pin starts discharging and the WDT goes into a reset state. During the reset state, VRESETB becomes “L”.
No. EA-326-231121 (6) When VTW reaches TWVREFH during the reset state, the TW pin starts discharging and the WDT goes into the ignoring state. (7) When a pulse is not sent to the SCK pin before V TW reaches TWVREFH during the closed window state, the TW pin starts discharging and the WDT goes into the open window state. (8) When a pulse is not sent to the SCK pin before VTW reaches TWVREFH during the open window state, the TW pin starts discharging and the WDT goes into the reset state. R5110xxx2C Watchdog Timer (Normal Type) IGN WD RST IGN WD WD RST I GN WD (2) (6) tIGN tWD tWR <tWD VIN VRESETB VSENSE VWDO TWVREFH VINH VSCK VDOUT tIGNtdelay tWD tIGN +VDET -VDET VTW TWVREFL Undefined VDDL Undefined Undefined Undefined R5110xxx2C WDT Timing Chart
No. EA-326-231121 (1) When the SENSE pin voltage (V SENSE) becomes more than the release voltage (+V DET), the DOUT pin voltage (VDOUT) becomes “H” after the release output delay time (tdelay) and the watchdog timer (WDT) starts monitoring a pulse. After that, the TW pin voltage (VTW) repeats charge and discharge. As a result, a sawtooth wave is generated. The WDT has three states: Ignoring, Reset, and Monitoring. In each state, the TW pin is charged from 0 V or TWVREFL (Typ.0.08 V). (2) After the WDT starts, the WDT is in an ignoring state until VTW is charged up to TWVREFH. So, a pulse to the SCK pin is ignored during the ignoring state. (3) When VTW is charged up to TWVREFH during the ignoring state, the TW pin starts discharging and the WDT goes into a monitoring state. (4) When a pulse is not sent to the SCK pin before VTW reaches TWVREFH during the monitoring state, the TW pin starts discharging and the WDT goes into a reset state. During the reset state, the WDO pin voltage (VWDO) becomes “L”. (5) When VTW reaches TWVREFH during the reset state, the TW pin starts discharging and the WDT goes into an ignoring state. (6) When a pulse is sent to the SCK pin before VTW reaches TWVREFH during the monitoring, the TW pin starts discharging and the WDT goes into the next monitoring state. (7) The WDT stops monitoring by setting the INH pin voltage (VINH) to “L”. Then, VWDO is fixed to “H” and VTW is fixed to “L”. (8) When changed VINH from “L” to “H”, the WDT goes into the ignoring state and restarts monitoring.
No. EA-326-231121 R5110xxx2D Watchdog Timer (Window Type) IGN LOW CW RST IG N LOW CW OW RST IGN LOW (2) (4) (5) VSENSE VWDO VTW VSCK TWVREFH +VDET VIN -VDET tIGN <tOWL <tCW tWR tCW tOWtdelay VINH tIGN <tOWL tIGN VDOUT TWVREFL Undefined VDDL Undefined Undefined Undefined R5110xxx2D WDT Timing Chart
No. EA-326-231121 (1) When the SENSE pin voltage (VSENSE) becomes more than the release voltage (+VDET), the DOUT pin voltage (VDOUT) becomes “H” after the release output delay time ( tdelay) and the watchdog timer (WDT) starts monitoring a pulse. After that , th e TW pin voltage (V TW) repeats charge and discharge. As a result, a sawtooth wave is generated. The WDT has four states: Ignoring, Reset, Open Window, and Closed Window. In each state, the TW pin is charged from 0 V or TWVREFL (Typ.0.08 V). (2) After WDT starts, the WDT is in an ignoring state until VTW is charged up to TWVREFH. So, a pulse to the SCK pin is ignored during the ignoring state. (3) When VTW is charged up to TWVREF H during the ignoring state, the TW pin starts discharging and the WDT goes into an open window state. This open window state is four times longer than the normal open window state. (4) When a pulse is sent to the SCK pin before VTW reaches TWVREFH during the open window state, the TW pin starts discharging and the WDT goes into a closed window state. (5) When a pulse is sent to the SCK pin before VTW reaches TWVREFH during the close window state, the TW pin starts discharging and the WDT goes into a reset state. During the reset state, VDOUT becomes “L”. (6) When VTW reaches TWVREFH during the reset state, the TW pin starts discharging and the WDT goes into an ignoring state. (7) When a pulse is not sent to the SCK pin before VTW reaches TWVREFH during a closed window state, the TW pin starts discharging and the WDT goes into an open window state. (8) When a pulse is not sent to the SCK pin before VTW reaches TWVREFH during the open window state, the TW pin starts discharging and the WDT goes into a reset state. (9) The WDT stops monitoring by setting the INH pin voltage (V INH) to “L”. Then, VWDO is fixed to “H” and VTW is fixed to “L”. (10) When changed VINH from “L” to “H”. the WDT goes into the ignoring state and restarts monitoring.
No. EA-326-231121 Delay Operation and Released Output Delay Time (tdelay) CD Pin Threshold Voltage ( VTCD) Released Voltage (+VDET) GND GND Detector Voltage (-VDET) Detect Output Delay Time (tPHL) Release Output Delay Time (tdelay) VOUT / SENSE Pin CD Pin Voltage RESETB / DOUT Pin Released Output Delay Timing Diagram When the operating voltage higher than the released voltage is applied to VOUT pin (R5110Sxx1A/R5110Sxx1B) or SENSE pin (R5110 xxx2C/R5110xxx2D), charge to an external capacitor starts, then C D pin voltage (VCD) increases. RESETB pin (R5110Sxx1A/R5110Sxx1B) or D OUT pin (R5110xxx2C/R5110xxx2D) maintains the released output until VCD reaches the threshold voltage of the release output delay pin (V TCD). And when VCD is over VTCD, RESETB pin or DOUT pin is inverted from “L” to “H”. That is, the charged external capacitor starts discharging. When the operating voltage lower than the detector threshold is applied to V DD pin, the detect output delay time, which is the time until the output voltage is inverted from “H” to “L”, remains constant independent of the external capacitor. -VDET+2.0 V 1.5 V VOUT / SENSE GND 5.0 V 2.5 V GND RESETB / DOUT tdelay tPHL Released Output Delay Time Released Output Delay Time (tdelay) indicates the time between the instance when VOUT pin (R5110Sxx1A / R5110Sxx1B) or SENSE pin (R5110xxx2C / R5110 xxx2D) shifts from “1.5 V” to “−VDET + 2 .0 V” by the application of a pulse voltage and the instance when the output voltage reaches 2.5 V after pulled up RESETB pin (R5110Sxx1A / R5110Sxx1B) or DOUT pin (R5110xxx2C/ R5110xxx2D) to 5.0 V with a resistor of 100 kΩ.
No. EA-326-231121 (1)R5110SxxxA/R5110xxxxC (2)R5110SxxxB/R5110xxxxD VOUT<Detector Threshold(R5110Sxx1A) SENSE<Detector Threshold(R5110xxx2C) or INH=Low (R5110xxx2C) VOUT<Detector Threshold(R5110Sxx1B) SENSE<Detector Threshold(R5110xxx2D) or INH=Low (R5110xxx2D) Ignoring Ignoring Reset Monitoring Long Open Window Open Window Closed Window Reset VOUT>Released Output Voltage(R5110Sxx1A) SENSE>Released Output Voltage(R5110xxx2C) and INH=High or OPEN(R5110xxx2C) Input Clock Time Out VOUT>Released Output Voltage(R5110Sxx1B) SENSE>Released Output Voltage(R5110xxx2D) and INH=High or OPEN(R5110xxx2D) This is given by the expression tdelay (s) = 1.1 × CD (F) / (1.0×10-6), where CD (F) represents capacitance of the external capacitor. If VOUT / SENSE pin goes up at a mild pace of 0.1V/s or less, connect a capacitor of 100 pF or more to CD pin. WDT State Transition Diagram
No. EA-326-231121 Time Setting for Watchdog Timer The following time of WDT is dependent on a capacitor connecting to the TW pin. Relationship between the value of capacitor and time can be expressed by the following equations. tIGN (s) = 1.8 x C(F) / (1.0 x 10-6) Inrush Current Prevention at Rising Characteristics R5110x has the inrush current preventing circuit to control the inrush current within about 400 mA limited. This circuit works during the rising periods. Therefore, the load current must be increased after rising up the output voltage (at typ.100 µ s after being out of the inrush current limited condition) by the sequence control. When the load current is increased during the rising periods, the inrush current must be controlled within 250 mA. VOUT IRUSH 100us (TYP) VSET 400mA (TYP) IOUT<250mA 250mA<IOUT IOUT Likewise, on the thermal shutdown and the foldback characteristic, the inrush current preventing circuit works when the output voltage re-rises after the output voltage fall down to a guideline (VSET x 0.4) or less. VOUT IOUT VSET×0.4
No. EA-326-231121 Standby Function When CE turns to low, the R5110x goes into the standby mode. During this mode, the voltage regulator (VR) stops the output, the watchdog timer (WDT) stops the pulse monitoring, and the voltage detector (VD) stops the voltage monitoring. Even if VIN < 3.5 V (Minimum Operating Voltage VMOV), VR stops the output, WDT stops the pulse monitoring, and VD stops the voltage monitoring. When CE = low or VIN < 3.5 V (Minimum Operating Voltage), the output of WDT and VD become as follows regardless of SENSE voltage. R5110Sxx1A/ R5110Sxx1B: The RESETB output is fixed to “L”. R5110xxx2C/ R5110xxx2D: The DOUT is fixed to “L”, and WDO output is fixed to the pull-up voltage. When V IN is under 1.52 V, values of RESETB output (R5110Sxx1A/ R5110Sxx1B) and D OUT output (R5110xxx2C/ R5110xxx2D) become indefinite, 0.1 V or more (pull-up voltage 5 V, pull-up resistance 100 kΩ). Voltage Setting (R5110Sxx1A / R5110Sxx1B) VD detects the drop of the VR output voltage (V OUT). When the VD release voltage (+VDET) is set to a voltage above the VR output voltage, the reset signal of VD is not released even if VD monitors the VR output voltage returns to the normal value after detecting the drop of VR. To prevent this issue, the following condition is required between VOUT and +VDET. (VR Set Output Voltage) x 0.985 – 30 mV > (VD Set Detector Threshold) x 1.018 x 1.030 When using a device with the above conditions of V OUT and +VDET, careful consideration must be given to the system operation before use. RESETB (DOUT) WDO CE Voltage Voltage CE standby VOUT (or SENSE) > -VDET VMOV Max. 1.52V VOUT VDIF VIN undefined RESETB (DOUT) WDO Voltage Voltage VOUT (or SENSE) > -VDET at VMOV
No. EA-326-231121 Manual Reset (MR) Function (R5110xxx2C, R5110xxx2D) Setting the MR pin to “L” forcefully sets DOUT to “L”. The maximum value of the delay time (tMR), which is until DOUT outputs “L”, is 1µs as an index of the performance. The MR pin is pulled-up by an internal resistor (Typ.110 kΩ). Current is passed to the MR pin when the voltage of MR > VDD. But, this current has no effect to the operation because the current is limited with a pull-up resistor. When setting the MR pin from “L” to “H”, DOUT is changed from “L” to “H” after the released output delay time and the WDT starts from the ignoring state. When the MR pin is “L”, the WDO pin outputs “H”. SENSE Function (R5110xxx2C, R5110xxx2D) The internal voltage detector monitors the input voltage to the SENSE pin. To measure the proper detector threshold, setting of VIN ≥ 3.5 V is required. Inhibition (INH) Function (R5110xxx2C, R5110xxx2D) Setting the INH pin to “L” stops the WDT pulse monitoring function and the WDO pin is fixed to “H” . The INH pin is pulled up with an internal resistor (Typ.110 kΩ).
No. EA-326-231121
APPLICATION INFORMATION
Typical Application Circuits R5110Sxx1A/B VDD SCK VOUT CE GND CD CD RESETB TW CTW VCC I/O Microprocessor RESET VIN CE Control R5110Sxx1A/B Typical Application R5110xxx2C/D VDD SCK VOUT CE GND CD CD SENSE MR DOUT WDO INH TW CTW VCC I/O Microprocessor RESET VIN CE Control R5110xxx2C/D Typical Application
No. EA-326-231121 External Components Symbol Description C1 (CIN) 0.1 µF, Ceramic Capacitor C2 (COUT) 0.1 µF, Ceramic Capacitor CTW A capacitor corresponding to time setting for Watchdog Timer is required. Refer to “Time Setting for WDT” in Operation Description for details. CD A capacitor corresponding to setting for Release Output Delay Time is required. Refer to “Delay Operation and Release Output Delay Time (tdelay)” in Operation Description for details. R1 A resistor is required to set with consideration of the output current and the leakage current. Refer to “Electrical Characteristic” for details. TECHNICAL NOTES Phase Compensation In the ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor C2 with 0.1 µF or more. If a tantalum capacitor is used, and its ESR (Equivalent Series Resistance) of C2 is large, the loop oscillation may result. Because of this, select C2 carefully considering its frequency characteristics. PCB Layout Make VDD and GND lines sufficient. If their impedance is too high, noise pickup or unstable operation may result. Connect 0.1 µF or more of the capacitor C1 between the VDD and GND, and as close as possible to the pins. In addition, connect the capacitor C2 between VOUT and GND, and as close as possible to the pins.
No. EA-326-231121 Prohibited Area for Fluctuations in Input Voltage Please take note that miss-detection or miss-release might be invited when changing an input voltage abruptly in the following prohibited area. Prohibited Area of Fluctuation at Falling of VIN Prohibited Area of Fluctuation at Rising of VIN 0.0 5.0 10.0 15. 0.01 0.1 1 10 100 1000 Input Voltage Falling Time tf (μs) Input Voltage peak Vp-p (V) Prohibited Area tf GND VIN Vp-p 0.01 0.1 1 10 100 1000 Input Voltage Rising Time tr (μs) Input Voltage peak Vp-p (V) Prohibited Area tr GND VIN Vp-p
No. EA-326-231121 TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 1) Power Consumption vs. Input Voltage (Ta = 25°C) VR=1.8V VR=3.3V VR=5.0V 2) CE Pin Current vs. CE Pin Voltage (Ta = 25°C, V IN=14V) VR=5.0V 0 6 12 18 24 30 36 Input Voltage VIN (V) Supply Current IIN (μA) 0 6 12 18 24 30 36 Input Voltage VIN (V) Supply Current IIN (μA) 0 6 12 18 24 30 36 Input Voltage VIN (V) Supply Current IIN (μA) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 6 12 18 24 30 36 CE Input Voltage VCE (V) CE Crrent ICE (μA)
No. EA-326-231121 3) GND Pin Current vs. Output Current (Ta = 25°C) 4) Output Voltage vs. Output Current (Ta = 25°C) VR=1.8V VR=3.3V VR=5.0V 100 120 140 0 50 100 150 200 250 300 350 400 450 500 IGND (μA) Output Current IOUT (mA) 0.0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 Output Current IOUT (mA) Output Voltage VOUT (V) VIN=3.5V VIN=4.8V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 Output Current IOUT (mA) Output Voltage VOUT (V) VIN=3.8V VIN=4.3V VIN=6.3V 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 200 400 600 800 1000 Output Current IOUT (mA) Output Voltage VOUT (V) VIN=5.5V VIN=6.0V VIN=8.0V
No. EA-326-231121 5) Output Voltage vs. Input Voltage (Ta = 25°C) VR=1.8V VR=3.3V VR=5.0V 6) Output Voltage vs. Temperature (VIN=14V, IOUT=1mA) VR=1.8V 1.764 1.782 1.800 1.818 1.836 -40 -20 0 20 40 60 80 100 Output Voltage VOUT (V) Ta (℃) VR=3.3V 3.234 3.267 3.300 3.333 3.366 -40 -20 0 20 40 60 80 100 Output Voltage VOUT (V) Ta (℃) 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Iout=1mA Iout=30mA Iout=150mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Iout=1mA Iout=30mA Iout=150mA 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Iout=1mA Iout=30mA Iout=150mA
No. EA-326-231121 VR=5.0V 4.900 4.950 5.000 5.050 5.100 -40 -20 0 20 40 60 80 100 Output Voltage VOUT (V) Ta (℃) 7) Dropout Voltage vs. Output Current VR=1.8V 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 Dropout Voltage VDIF (mV) Output Current IOUT (mA) -40°C 25°C 105°C (VIN=3.5V) VR=3.3V 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 Dropout Voltage VDIF (mV) Output Current IOUT (mA) -40°C 25°C 105°C (VIN=3.5V) VR=5.0V 100 200 300 400 500 600 700 800 0 100 200 300 400 500 Dropout Voltage VDIF (mV) Output Current IOUT (mA) -40°C 25°C 105°C
No. EA-326-231121 8) Dropout Voltage vs. Output Voltage (Ta=25℃) 9) Ripple Rejection vs. Input Voltage (Ta=25℃, Ripple = 0.2 Vpp) VR=1.8V, IOUT=1mA VR=1.8V, IOUT=30mA VR=3.3V, IOUT=1mA VR=3.3V, IOUT=30mA 200 400 600 800 1000 1200 1400 1600 1800 2000 Output Voltage VOUT (V) Dropout Voltage VDIF (mV) IOUT=1mA IOUT=10mA IOUT=100mA IOUT=500mA (VIN=3.5V) 100 3.5 5 6.5 8 9. 5 11 12.5 14 Input Voltage VIN (V) Ripple Rejection RR (dB) 100Hz 1kHz 10kHz 100kHz IOUT = 1mA 100 3.5 5 6.5 8 9. 5 11 12.5 14 Input Voltage VIN (V) Ripple Rejection RR (dB) 100Hz 1kHz 10kHz 100kHz IOUT = 30mA 100 3.5 5 6.5 8 9. 5 11 12.5 14 Input Voltage VIN (V) Ripple Rejection RR (dB) 100Hz 1kHz 10kHz 100kHz IOUT = 1mA 100 3.5 5 6.5 8 9. 5 11 12.5 14 Input Voltage VIN (V) Ripple Rejection RR (dB) 100Hz 1kHz 10kHz 100kHz IOUT = 30mA
No. EA-326-231121 VR=5.0V, IOUT=1mA VR=5.0V, IOUT=30mA 10) Ripple Rejection vs. Frequency (Ta=25℃, Ripple=0.2 Vpp) VR=1.8V VR=3.3V VR=5.0V 100 5 6.5 8 9.5 11 12.5 14 Input Voltage VIN (V) Ripple Rejection RR (dB) 100Hz 1kHz 10kHz 100kHz IOUT = 1mA 100 5 6.5 8 9.5 11 12.5 14 Input Voltage VIN (V) Ripple Rejection RR (dB) 100Hz 1kHz 10kHz 100kHz IOUT = 30mA 100 0.01 0.1 1 10 100 1000 Frequency [kHz] Ripple Rejection RR(dB) IOUT=1mA IOUT=30mA IOUT=150mA VIN = 4.0V 100 0.01 0.1 1 10 100 1000 Frequency [kHz] Ripple Rejection RR(dB) IOUT=1mA IOUT=30mA IOUT=150mA VIN = 5.3V 100 0.01 0.1 1 10 100 1000 Frequency [kHz] Ripple Rejection RR(dB) IOUT=1mA IOUT=30mA IOUT=150mA VIN = 7.0V
No. EA-326-231121 11) Input Transient Respon (Ta=25°C) VR=1.8V, IOUT=30mA, COUT=0.1μF VR=1.8V, IOUT=30mA, COUT=10μF VR=3.3V, IOUT=30mA, COUT=0.1μF VR=3.3V, IOUT=30mA, COUT=10μF VR=5.0V, IOUT=30mA, COUT=0.1μF VR=5.0V, IOUT=30mA, COUT=10μF 1.5 1.6 1.7 1.9 2.0 2.1 0 50 100 150 200 250 300 Time (μs) Output Voltage VOUT (V) 0.0 1.0 2.0 4.0 5.0 Input Voltage VIN (V) COUT = 0.1μF Input Voltage 3.5 <=> 4.5V r=tf=5usec) Outut Voltage 1.5 1.6 1.7 1.9 2.0 2.1 0 100 200 300 400 500 600 700 800 Time (μs) Output Voltage VOUT (V) 0.0 1.0 2.0 4.0 5.0 Input Voltage VIN (V) COUT = 10μF Input Voltage 3.5 <=> 4.5V r=tf=5usec) Outut Voltage 3.0 3.1 3.2 3.4 3.5 3.6 0 50 100 150 200 250 300 Time (μs) Output Voltage VOUT (V) 0.8 1.8 2.8 4.8 5.8 Input Voltage VIN (V) COUT = 0.1μF Input Voltage 4.3 <=> 5.3V r=tf=5usec) Outut Voltage 3.0 3.1 3.2 3.4 3.5 0 100 200 300 400 500 600 700 800 Time (μs) Output Voltage VOUT (V) 0.8 1.8 2.8 4.8 5.8 Input Voltage VIN (V) COUT = 10μF Input Voltage 4.3 <=> 5.3V r=tf=5usec) Outut Voltage 4.7 4.8 4.9 5.1 5.2 5.3 0 50 100 150 200 250 300 Time (μs) Output Voltage VOUT (V) 2.5 3.5 4.5 6.5 7.5 Input Voltage VIN (V) COUT = 0.1μF Input Voltage 6.0 <=> 7.0V r=tf=5usec) Outut Voltage 4.7 4.8 4.9 5.1 5.2 5.3 0 100 200 300 400 500 600 700 800 Time (μs) Output Voltage VOUT (V) 2.5 3.5 4.5 6.5 7.5 Input Voltage VIN (V) COUT = 10μF Input Voltage 6.0 <=> 7.0V r=tf=5usec) Outut Voltage
No. EA-326-231121 12) Load Transient Response (Ta=25°C) VR=1.8V, COUT=0.1μF VR=1.8V, COUT=10μF VR=3.3V, COUT=0.1μF VR=3.3V, COUT=10μF VR=5.0V, COUT=0.1μF VR=5.0V, COUT=10μF 150 300 0 50 100 150 200 250 300 350 Time (μs) Output Current IOUT (mA) -0.2 0.8 1.8 2.8 3.8 Output Voltage VOUT (V) Output Current 1mA <=>150mA (tr=tf=0.5usec) Output Voltage 150 300 Time (ms) Output Current IOUT (mA) 1.4 1.6 1.8 2.2 Output Voltage VOUT (V) Output Current 1mA <=>150mA r=tf=0.5usec) Output Voltage 150 300 0 50 100 150 200 250 300 350 Time (μs) Output Current IOUT (mA) 1.3 2.3 3.3 4.3 5.3 Output Voltage VOUT (V) Output Current 1mA <=>150mA (tr=tf=0.5usec) Output Voltage 150 300 Time (ms) Output Current IOUT (mA) 2.9 3.1 3.3 3.5 3.7 Output Voltage VOUT (V) Output Current 1mA <=>150mA (tr=tf=0.5usec) Output Voltage 150 300 0 50 100 150 200 250 300 350 Time (μs) Output Current IOUT (mA) 3.0 4.0 5.0 6.0 7.0 Output Voltage VOUT (V) Output Current 1mA <=>150mA (tr=tf=0.5usec) Output Voltage 150 300 Time (ms) Output Current IOUT (mA) 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 Output Voltage VOUT (V) Output Current 1mA <=>150mA (tr=tf=0.5usec) Output Voltage
No. EA-326-231121 13) CE Transient Response (Ta=25℃, VIN=14V, IOUT=1mA, COUT=0.1μ to 47μF) VR=1.8V, CE at rising VR=1.8V, CE at falling VR=3.3V, CE at rising VR=3.3V, CE at falling VR=5.0V, CE at rising VR=5.0V, CE at falling Time (ms) CE Input Voltage VCE (V) Output Voltage VOUT (V) -200 200 400 600 800 1000 1200 Inrush Current (mA) VCE 0.1uF 1.0uF 4.7uF 10uF 47uF CE Input Voltage Output Voltage Inrush Crurent 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 Time (ms) CE Input Voltage VCE (V) Output Voltage VOUT (V) VCE 0.1uF 1.0uF 4.7uF 10uF 47uF CE Input Voltage Output Voltage Time (ms) CE Input Voltage VCE (V) Output Voltage VOUT (V) -200 200 400 600 800 1000 1200 Inrush Current (mA) VCE 0.1uF 1.0uF 4.7uF 10uF 47uF CE Input Voltage Output Voltage Inrush Crurent 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 Time (ms) CE Input Voltage VCE (V) Output Voltage VOUT (V) VCE 0.1uF 1.0uF 4.7uF 10uF 47uF CE Input Voltage Output Voltage Time (ms) CE Input Voltage VCE (V) Output Voltage VOUT (V) -200 200 600 800 1000 1200 Inrush Current (mA) VCE 0.1uF 1.0uF 4.7uF 10uF 47uF CE Input Voltage Output Voltage Inrush Crurent 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 10 20 30 40 50 60 70 80 90 100 Time (ms) CE Input Voltage VCE (V) Output Voltage VOUT (V) VCE 0.1uF 1.0uF 4.7uF 10uF 47uF CE Input Voltage Output Voltage
No. EA-326-231121 14) Detector Threshold vs. Temperature VD=1.6V 1.568 1.584 1.600 1.616 1.632 -40 -20 0 20 40 60 80 100 Detector Threshold VDET (V) Ta (℃) VD=3.0V 2.940 2.970 3.000 3.030 3.060 -40 -20 0 20 40 60 80 100 Detector Threshold VDET (V) Ta (℃) VD=4.6V 4.508 4.554 4.600 4.646 4.692 -40 -20 0 20 40 60 80 100 Detector Threshold VDET (V) Ta (℃) 15) DOUT Pin Voltage vs. SENSE Pin Input Voltage (DOUT pulled-up to 5V with 100kΩ) VD=1.6V VD=3.0V Input Voltage VSENSE (V) Output Voltage DOUT (V) Input Voltage VSENSE (V) Output Voltage DOUT (V)
No. EA-326-231121 VD=4.6V 16) Release Output Delay Time vs. Input Voltage 17) Release Output Delay Time vs. Temperature 220 225 230 235 240 245 250 255 260 0 4 8 12 16 20 24 28 32 36 Output Delay Time for Release tPLH (ms) Input Voltage VIN (V) CD = 0.22μF 220 225 230 235 240 245 250 255 260 -40 -20 0 20 40 60 80 100 Output Delay Time for Reset tdelay (ms) Ta (℃) CD = 0.22μF 18) Detect Output Delay Time vs. Temperature 19) Release Output Delay Time and Detect Output Delay Time vs. External Capacitor for CD Pin -40 -20 0 20 40 60 80 100 Output Delay Time for Release tdelay (μs) Ta (℃) Input Voltage VSENSE (V) Output Voltage DOUT (V) 0.01 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 Output Delay Time for Release [tdelay (ms)] Output Delay Time for Reset [tdelay (ms)] External Capacitance CD (nF) tdelay tPHL Release Output Delay Time [tdelay (ms)] Detect Output Delay Time [tPHL (ms)]
No. EA-326-231121 20) WDT tWD / tOW / tCW / tIGN vs. Input Voltage 21) Reset Time vs. Input Voltage 22) Long Open Window Time vs. Input Voltage R5110SxxxB/D 23) WDT tWD / tOW / tCW / tIGN vs. Temperature -40 -20 0 20 40 60 80 100 Monitoring Time tWD / Open Window Time tOW / Closed Window Time tCW / Ignore Time tIGN (ms) Ta (℃) CTW = 10nF tWD / tOW / tCW / tIGN 0 4 8 12 16 20 24 28 32 36 Input Voltage VIN (V) Monitoring Time tWD / Open Window Time tOW / Closed Window Time tCW / Ignore Time tIGN (ms) CTW = 10nF tWD / tOW / tCW / tIGN 8.4 8.6 8.8 9.2 9.4 9.6 9.8 10.0 10.2 10.4 0 4 8 12 16 20 24 28 32 36 Input Voltage VIN (V) Reset Time tWR (ms) CTW = 10nF 0 4 8 12 16 20 24 28 32 36 Input Voltage VIN (V) Long Term Open Window Time tOWL (ms) CTW = 10nF
No. EA-326-231121 24) Reset Time vs. Temperature 25) Long Open Window Time vs. Temperature 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 -40 -20 0 20 40 60 80 100 Reset Time tWR (ms) Ta (℃) CTW = 10nF R5110SxxxB/D -40 -20 0 20 40 60 80 100 Long Term Open Window Time tOWL (ms) Ta (℃) CTW = 10nF 26) WDT tWD / tOW / tCW / tIGN /tOWL / tRST Vs. External Capacitor for CTW Pin 27) Nch. Driver Output Current vs. VDS 28) Nch. Driver Output Current vs. Input Voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 4 6 8 10 12 14 Nch Driver Output Current (mA) ( IOUTRSTB / IOUTDOUT / IOUTWDO ) Input Voltage VIN (V) -40°C 25°C 105°C VDS (VRESETB / VDOUT / VWDO) = 0.1V 0.01 0.1 100 1000 10000 0.001 0.01 0.1 1 10 100 1000 External Capacitance CTW (nF) Window Time (ms) tWD / tOW / tCW / tIGN tOWL tRST VDS (V) (VRESETB / VDOUT / VWDO) Nch Driver Output Current (mA) ( IOUTRSTB / IOUTDOUT / IOUTWDO ) VIN=3.5V VIN=4.0V VIN=5.0V VIN=6.0V VIN=5.0, 6.0V
No. EA-326-231121 ESR vs. Output Current The IC is recommended to use a ceramic type capacitor, but the IC can be used other capacitors of the lower ESR type. The relation between the output current (IOUT) and the ESR of output capacitor is shown below. R5110x VDD VOUT CE C1 C2 IOUT C1 = Ceramic0.1 μF, C2 = Ceramic0.1 μF GND ESR Measurement conditions: Frequency Band: 10 Hz to 2 MHz Measurement Temperature: −40°C to 105°C Hatched area: Noise level is 40 μV (average) or below Ceramic Capacitor: C1 = C2 = Ceramic 0.1 μF VR=1.8V, 3.3V VR=5.0V 0.01 0.1 100 1000 0 50 100 150 200 250 300 350 400 450 500 Equivalent Series Resistance ESR (Ω) Output Current IOUT (mA) VIN = 3.5V to 36V Ta=-40°C 105°C 0.01 0.1 100 1000 0 50 100 150 200 250 300 350 400 450 500 Equivalent Series Resistance ESR (Ω) Output Current IOUT (mA) VIN = 5.0V to 36V Ta=-40°C 105°C
i PD-HSOP-8E-(105125150)-JE-B The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 21 pcs Measurement Result (Ta = 25°C , Tjmax = 125°C) Item Measurement Result Power Dissipation 2900 mW Thermal Resistance (θja) θja = 34.5°C/W Thermal Characterization Parameter (ψjt) ψjt = 10 °C/W θja: Junction-to–ambient thermal resistance. ψjt: Junction–to-top of package thermal characterization parameter. Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above gra ph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: 500 1000 1500 2000 2500 3000 3500 4000 0 25 50 75 100 125 150 Power Dissipation PD (mW) Ambient Temperature (°C) 105 2900 3600 Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years
PACKAGE DIMENSIONS HSOP-8E i DM-HSOP-8E-JE-B
PART MARKINGS R5110S (HSOP-8E) MK-R5110S-(HSOP-8E)-JE-A i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number ⑦⑧⑨ ①②③④⑤⑥ 8 5 1 4 R5110S (HSOP-8E) Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or our distributor before attempting to use AOI. R5110Sxx1A/B Part Marking List VSET / -VSET VR VD R5110S011A RS007A R5110S011B RS007N 5.0V 4.6V R5110S021A RS007B R5110S021B RS007P 1.8V 1.6V R5110S031A RS007C R5110S031B RS007R 5.0V 4.5V R5110S041A RS007D R5110S041B RS007S 5.0V 4.4V R5110S051A RS007E R5110S051B RS007T 5.0V 4.3V R5110S061A RS007F R5110S061B RS007U 5.0V 4.2V R5110S071A RS007G R5110S071B RS007V 5.0V 3.7V R5110S081A RS007H R5110S081B RS007W 3.3V 3.0V R5110S091A RS007J R5110S091B RS007X 3.3V 2.9V R5110S101A RS007K R5110S101B RS007Y 3.3V 2.8V R5110S111A RS007L R5110S111B RS007Z 3.3V 2.7V R5110S121A RS007M R5110S121B RS008A 5.0V 4.1V R5110S131A RS00 8B R5110S131B RS008 C 3.4V 3.1V
PD-HSOP-18-(105125150)-JE-B i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 21 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 3100 mW Thermal Resistance (θja) θja = 32°C/W Thermal Characterization Parameter (ψjt) ψjt = 8 °C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: 500 1000 1500 2000 2500 3000 3500 4000 0 25 50 75 100 125 150 Power Dissipation PD (mW) Ambient Temperature (°C) 105 3100 3900 Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years
PACKAGE DIMENSIONS HSOP-18 i DM-HSOP-18-JE-B
PART MARKINGS R5110S (HSOP-18) MK-R5110S-(HSOP-18)-JE-B i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5110S (HSOP-18) Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or our distributor before attempting to use AOI. R5110Sxx2C/D Part Marking List VSET / -VSET VR VD R5110S012C RS102A R5110S012D RS102N 5.0V 4.6V R5110S022C RS102B R5110S022D RS102P 1.8V 1.6V R5110S032C RS102C R5110S032D RS102R 5.0V 4.5V R5110S042C RS102D R5110S042D RS102S 5.0V 4.4V R5110S052C RS102E R5110S052D RS102T 5.0V 4.3V R5110S062C RS102F R5110S062D RS102U 5.0V 4.2V R5110S072C RS102G R5110S072D RS102V 5.0V 3.7V R5110S082C RS102H R5110S082D RS102W 3.3V 3.0V R5110S092C RS102J R5110S092D RS102X 3.3V 2.9V R5110S102C RS102K R5110S102D RS102Y 3.3V 2.8V R5110S112C RS102L R5110S112D RS102Z 3.3V 2.7V R5110S122C RS102M R5110S122D RS103A 5.0V 4.1V R5110S132C RS10 3B R5110S132D RS103 C 3.4V 3.1V R5110S142C RS 103D R5110S142D RS 103E 3.3V 4.6V 18 10 1 9 ⑦⑧⑨ ①②③④⑤⑥
POWER DISSIPATION HQFN0808-28 PD-HQFN0808-28-(105125150)-JE-A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 72 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 4600 mW Thermal Resistance (θja) θja = 21.5°C/W Thermal Characterization Parameter (ψjt) ψjt = 5°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: 1000 2000 3000 4000 5000 6000 0 25 50 75 100 125 150 Power Dissipation (mW) Ambient Temperature (°C) 105 4600 Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years 5800
PACKAGE DIMENSIONS HQFN0808-28 DM-HQFN0808-28-JE-A i
i ①~⑩: Product Code … Refer to Part Marking List ⑪~⑮: Lot Number … Alphanumeric Serial Number R5110L (HQFN0808-28) Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or our distributor before attempting to use AOI. R5110LxxxC/D Part Marking List Product Name ① to ⑩ Product Name ① to ⑩ VSET / -VSET VR VD R5110L012C R5110L012C R5110L012D R5110L012D 5.0V 4.6V R5110L022C R5110L022C R5110L022D R5110L022D 1.8V 1.6V R5110L032C R5110L032C R5110L032D R5110L032D 5.0V 4.5V R5110L042C R5110L042C R5110L042D R5110L042D 5.0V 4.4V R5110L052C R5110L052C R5110L052D R5110L052D 5.0V 4.3V R5110L062C R5110L062C R5110L062D R5110L062D 5.0V 4.2V R5110L072C R5110L072C R5110L072D R5110L072D 5.0V 3.7V R5110L082C R5110L082C R5110L082D R5110L082D 3.3V 3.0V R5110L092C R5110L092C R5110L092D R5110L092D 3.3V 2.9V R5110L102C R5110L102C R5110L102D R5110L102D 3.3V 2.8V R5110L112C R5110L112C R5110L112D R5110L112D 3.3V 2.7V R5110L122C R5110L122C R5110L122D R5110L122D 5.0V 4.1V R5110L132C R5110L132C R5110L132D R5110L132D 3.4V 3.1V R5110L142C R5110L142C R5110L142D R5110L142D 3.3V 4.6V
- T he products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.
- Aerospace Equipment
- Equipment Used in the Deep Sea
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- Life Maintenance Medical Equipment
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- Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/