R5009ANX

R5009ANX ROHM | Alldatasheet

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• Manufacturer or author: ROHM Co., Ltd.
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www.rohm.com 10V Drive Nch MOSFET R5009ANX zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (V GSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. zApplications zInner circuit Switching zPackaging specifications Package Code Basic ordering unit (pieces) 500 Bulk R5009ANX Type zAbsolute maximum ratings (Ta=25°C) Parameter Range of storage temperature Channel temperature Total power dissipation (Tc=25°C) Drain current Gate-source voltage Drain-source voltage VDSS VGSS PD Tch 500 V V A W ±30 ±9I D IDP Continuous Pulsed A±36 150 Tstg °C−55 to +150 Avalanche Energy Avalanche Current IAS 4.5 EAS 5.4 Symbol Limits Unit ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed ∗3IS A ISP A A mJ Continuous Pulsed Source current (Body Diode) ∗1 zThermal resistance Parameter °C/WRth(ch-c) Symbol Limits Unit Channel to case 2.5 TO-220FM (1)Base (2)Collector (3)Emitter 4.5 2.8 0.75 φ3.2 (2)( 3)(1) 0.8 2.54 2.62.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 ∗1 Body Diode (1) Gate (2) Drain (3) Source (1) (2) (3)

www.rohm.com zElectrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Symbol I GSS V(BR)DSS IDSS VGS(th) RDS(on) Ciss | Yfs | Coss Crss Min. 500 2.5 2.5 0.55 650 400 ±100 100 4.5 0.72 nA V GS=±30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=4.5A, VGS=10V VDS=25V ID=4.5A, VDS=10V VGS=0V f=1MHz V µA V Ω pF S pF pF td(on) − 30 − ns tr − 20 − VGS=10Vns td(off) − 62 − RL=55.6Ωns tf − 28 − RG=10Ωns Qg − 21 − VDD 250V ID=9A VGS=10V RL=27.8Ω / RG=10Ω nC Qgd − 9 − nC Typ. Max. Unit Conditions ID=4.5A, VDD 250V ∗ Pulsed Qgs − 5 − nC∗ zBody diode characteristics (Source-drain) (Ta=25°C) VSD −− 1.5 V I S= 9A, VGS=0VForward voltage ∗ Pulsed Parameter Symbol Min. Typ. Max. Unit Conditions

www.rohm.com zElectrical characteristic curves 0 1 02 03 04 05 0 Ta= 25°C Pulsed 5.0V VGS= 4.5V 6.0V 7.0V 8.0V 6.5V 10V 5.5V Fig.2 Typical Output Characteristics(Ⅰ) 0.001 0.01 0.1 100 VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C Fig.4 Typical Transfer Characteristics 0.1 0.1 1 10 100 VGS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 0.5 1.5 0 5 10 15 Ta=25°C Pulsed ID= 4.5A ID= 9.0A Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 100 0.01 0.1 1 10 VDS= 10V Pulsed Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C Fig.9 Forward Transfer Admittance vs. Drain Current 0.01 0.1 100 0.1 1 10 100 1000 Ta = 25°C Single Pulse DC operation PW=100us PW=1ms Operation in this area is limited by R DS(ON) Fig.1 Maximum Safe Operating Area Fig.3 Typical Output Characteristics(Ⅱ) 012345 Ta= 25°C Pulsed VGS= 4.5V 5.0V 6.0V 5.5V6.5V 7.0V 8.0V 10V Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 0.5 1.5 -50 0 50 100 150 VGS= 10V Pulsed ID= 4.5A ID= 9.0A Fig.5 Gate Threshold Voltage vs. Channel Temperature -50 0 50 100 150 VDS= 10V ID= 1mA DRAIN-SOURCE VOLTAGE : VDS ( V ) DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE: VDS (V) DRAIN CURRENT: ID (A) DRAIN-SOURCE VOLTAGE: VDS (V) DRAIN CURRENT: ID (A) DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) CHANNEL TEMPERATURE: Tch (°C) GATE THRESHOLD VOLTAGE: VGS(th) (V) GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) CHANNEL TEMPERATURE: Tch (°C) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) FORWARD TRANSFER ADMITTANCE : |Yfs| (S)

www.rohm.com 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Ta = 25°C Single Pulse : 1Unit Rth（ch-a） = 42.4°C/W 100 1000 0.1 1 10 100 Ta= 25°C di / dt= 100A / µs V GS= 0V Pulsed Fig.13 Reverse Recovery Time vs.Reverse Drain Current 0.01 0.1 100 00 . 511 . 5 VGS= 0V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 0 5 10 15 20 25 30 Ta= 25°C VDD= 250V ID= 9A RG= 10Ω Pulsed Fig.12 Dynamic Input Characteristics 100 1000 10000 0.1 1 10 100 1000 Ciss Coss Crss Ta= 25°C f= 1MHz VGS= 0V Fig.11 Typical Capacitance vs. Drain-Source Voltage 100 1000 10000 0.1 1 10 100 tr tf td(on) td(off) Ta= 25°C VDD= 250V VGS= 10V RG= 10Ω Pulsed Fig.14 Switching Characteristics Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS (V) CAPACITANCE : C (pF) SOURCE-DRAIN VOLTAGE : VSD (V) REVERSE DRAIN CURRENT : IDR (A) REVERSE DRAIN CURRENT : IDR (A) REVERSE RECOVERY TIME: trr (ns) DRAIN CURRENT : ID (A) SWITCHING TIME : t (ns) PULSE WIDTH : Pw(s) NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)

www.rohm.com zSwitching characteristics measurement circuit Fig.1 Switching time measurement ci rcuit Fig.2 Switching waveforms Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform IG(Const.)

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