R5000F_16 GETEDZ | Alldatasheet
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Maximum Ratings and Characteristics Absolute Maximum Ratings High reliability resin molded type high voltage mesa type silicon chip by epoxy resin. diode in small size package which is sealed a multilayed Outline Drawings : Items Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature Allowable Operation Case Temperature Symbols V RRM I O I FSM T j Tc Condition Ta=25°C,Resistive Load 200 125 125 -65 to +175 Units kV mA A peak Storage Temperature T stg R5000F 5.0 Ta=25°C,8.3 ms Ta=25°C, Maximum Reverse Recovery Time Trr at 25°C; Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols V F IR IR Conditions at 25°C,V R at 100°C,V Units V uA uA Junction Capacitance Cj at 25°C; V R =0V,f=1MHz 7.0 R5000F 5.0 100 5.0 pF =VRRM R =VRRM 500 nS at 25°C,I F =IF(AV) I =0.5A; F I =1.0A; R I =0.25A; rr R5KF HVGT *Fast switching *Low leakage *High reliability *High current capability *High surge capability * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Mounting position: Any * Weight: 0.4 gram * Lead: MIL-STD-202E, Method 208 guaranteed * Polarity: Color band denotes cathode end 1.0(25.4) MIN .300(7.6) .230(5.8) 1.0(25.4) MIN R5000F
GETE ELECTRONIC CO.,LTD n E-mail: Tel: 0086-20-8184 9628 n Fax: 0086-20-8184 9638 n www.hvgtsemi.com GUANGZHOU * CHINA www.getedz.comsales@getedz.com China Tel: 4001 83 84 85 RA TING AND CHARACTERISTIC CURVES: R5000F 200mA 5.0kV 500nS-HIGH VOLTAGE DIODE