GH05U10J GETEDZ | Alldatasheet
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Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2021-01 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage, large current.. 3. High frequency, Ultra Fast recovery. 4. Conform to RoHS and SGS . 5. Epoxy resin molded in vacuumHave anticorrosion in the surface . APPLICATIONS: 1. High voltage multiplier circuit 2. High frequency switching power supply . 3. General purpose high voltage rectifier . 4. Laser power supply medical equipment .. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 2.10 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME : DO-721 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25° C 10 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25° C 12 kV Average Forward Current Maximum IFAVM TA=55°C 500 mA TOIL=55° C 600 mA Non-Repetitive Forward Surge Current IFSM TA=25° C; 60Hz Half-Sine Wave; 8.3mS 20 A Junction Temperature TJ 150 °C Allowable Operation Case Temperature Tc -40~+150 °C Storage Temperature TSTG -40~+150 °C ELECTRICAL CHARACTERISTICS: TA=25° C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VFM at 25° C; at IFAVM 12 V Maximum Reverse Current IR1 at 25° C; at VRRM 0.5 uA IR2 at 125°C; at VRRM 50 uA Maximum Reverse Recovery Time TRR at 25° C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 50 nS Junction Capacitance CJ at 25° C; VR=0V; f=1MHz 4.9 pF
Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2021-01 2 / 2 Forward Current Derating Curve Reverse Recovery Measurement Waveform Average Forward Current-% 125 100 0 25 50 75 100 125 150 175 Temperature(°C) TRR IF IRR IR Typical data capture points: IF =0.5IR , IR,IRR =0.25IR IR is typically the rated average forward current maximum (IFAVM) of the D.U.T Non-Repetitive Surge Current 100 Peak Forward Surge 50 Current 1 10 100 Cycles (60Hz) MARKING: Type Code Cathode Mark GH05U10J GH05U10J HVGT PART NUMBER NOTE: Chip Frequency IF(AV) TRR VRRM Dimension Shape Code G H 05 U 10 J GPP chip High Frequency 0.5A Ultra Fast Recovery 10kV J=DO-721