R5000_18_05 GETEDZ | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
R5000 200mA 5.0kV High Voltage Silicon Rectifier Diode GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2018-04 1 / 3 INTRODUCE: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers . FEATURES: 1. Low leakage. 2. Low forward voltage drop. 3. High current capability. 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. Rectifier for high voltage power supply. 2. High voltage transformer rectifier . 3. Doubler rectifier circuit. 4. Accelerator power supply. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.4 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME: DO -15 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25° C 5000 V Maximum RMS Reverse Voltage VRMS TA=25° C 3500 V Maximum DC Blocking Voltage VR TA=25°C 5000 V Average Forward Current Maximum IO TOIL=50°C 200 mA Non-Repetitive Forward Surge Current IFSM TA=25° C; 60Hz Half-Sine Wave; 8.3mS 30 A Junction Temperature TJ 150 °C Allowable Operation Case Temperature Tc -65~+150 °C Storage Temperature TSTG -65~+150 °C ELECTRICAL CHARACTERISTICS: TA=25° C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VFM at 25° C; at IFAVM 5.0 V Maximum Reverse Current IR1 at 25° C; at VRRM 5.0 uA IR2 at 100° C; at VRRM 40 uA Maximum Reverse Recovery Time TRR at 25° C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS Junction Capacitance CJ at 25° C; VR=4.0V; f=1MHz 30 pF
R5000 200mA 5.0kV High Voltage Silicon Rectifier Diode GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2018-04 2 / 3 Fig 1 Forward Current Derating Curve Fig 2 Non-Repetitive Surge Current Cycles (60Hz) Marking Type Code Cathode Mark R5000 R5000 HVGT
R5000 200mA 5.0kV High Voltage Silicon Rectifier Diode GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2018-04 3 / 3 HVGT PACKING INFORMATION: Tape size: A=65.0mm B=52.0mm C=5.0mm G=6.0mm G C A B Carton packaging: L W H Box Box size: (mm) Quantity of packing: (pcs) Gross weight: (kg) Minimum packing box: L260 x H145 x W80 3,000 1.20 Outside packed cartons: L415 x H315 x W275 30,000 12.80