R3000 GETEDZ | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
200mA 3000V~5000V--High voltage silicon rectifier diode GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2016 1 / 2 MAXIMUM RATINGS AND CHARACTERISTICS: ( @ TA= 25°C unless otherwise specified ) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbols R3000 R4000 R5000 Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 3000 4000 5000 V RMS Reverse Voltage VR(RSM) 2100 2800 3500 V Average Output Current (Note 1) @ TL = 50°C IO 200 mA Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @ I F= 200mA VFM 4.0 5.0 V Peak Reverse Leakage Current at Rated DC Blocking Voltage IRM 5.0 uA Typical Junction Capacitance (Note 2) CJ 30 pF Typical Thermal Resistance Junction to Ambient RΘJA 117 K/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME : DO-15 FEATURES: 1. Low cost . 2. Low leakage . 3. Low forward voltage drop . 4. Conform to RoHS . 5. High current capability. APPLICATIONS: 1. High voltage multiplier circuit 2. Electrostatic generator circuit . 3. General purpose high voltage rectifier . 4. Other. MECHANICAL DATA: Case: JEDEC DO-15 molded plastic body Terminals: Plated axial lea ds, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any. Weight:0.014 ounce, 0.40 grams.
200mA 3000V~5000V--High voltage silicon rectifier diode GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2016 2 / 2 Fig 1 Fig 2 TYPICAL FORWARD CURRENT DERATING CURVE MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AMBIENT TEMPERATURE, (° C ) NUMBER OF CYCLES AT 60Hz Fig 3 TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOL TAGE, (%)