R1580N NISSHINBO | Alldatasheet

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Technical content

34 V Constant-Current LED Driver Controller

No. EA- 365-221129 OUTLINE The R1580N is a 34-V constant-current LED driver controller. Internally, this device consists of a linear dimming controller using a PWM input signal, a thermal shutdown circuit (TSD), and an undervoltage lockout circuit (UVLO) in addition to the basic constant -current control circuits. A flicker-free wide-dimming constant-current LED driver can be configured by only adding an Nch MOSFET, a current sensing resistor and capacitors to the R1580N. The FET to control current flow is placed externally, so that the R1580N will not give any influence on the current range capable of dealing with. The R1580N is linear dimmable with using a PWM signal on the DIM pin. The R1580N is capable of performing a constant-current control corresponding to the different PWM duty cycles. The R1580N002A is linear dimmable as low as 0.5% PWM duty cycle and the R1580N 001A/ R1580N003A is linear dimmable as low as 1% PWM duty cycle. Unlike other LED drivers with PWM dimming, the R1580N can provide a smooth flicker-free dimming operation using linear dimming. The R1580N is offered in a small 6-pin SOT-23-6 package.

FEATURES

R1580N001A/ R1580N002A/ R1580N003A

  • Input Voltage Range (Max. Rating): 3.6 V to 34.0 V (36.0 V)
  • Operating Temperature Range: −40°C to 85°C
  • Line Regulation: Typ. 0.01%/V
  • Thermal Shutdown Protection
  • Linear Dimmable Using a PWM Signal
  • Package: SOT-23-6 R1580N001A ( Comparator Input, 1.0% PWM Duty)
  • Max. SOURCE Pin Voltage Accuracy (100% PWM Duty): Typ. 400 mV ±8 mV
  • Min. SOURCE Pin Voltage Accuracy (1.0% PWM Duty): Typ. 4 mV ±2 mV
  • Supply Current: Typ. 320 µA, Standby Current: Typ. 140 µA R1580N002A ( Comparator Input, 0.5% PWM Duty)
  • Max. SOURCE Pin Voltage Accuracy (100% PWM Duty): Typ. 800 mV ±16 mV
  • Min. SOURCE Pin Voltage Accuracy (0.5% PWM Duty): Typ. 4 mV ±2 mV
  • Supply Current: Typ. 320 µA, Standby Current: Typ. 140 µA R1580N003A ( Inverter Input, 1.0% PWM Duty)
  • Max. SOURCE Pin Voltage Accuracy (100% PWM Duty): Typ. 400 mV ±8 mV
  • Min. SOURCE Pin Voltage Accuracy (1.0% PWM Duty): Typ. 4 mV ±2 mV
  • Supply Current: Typ. 320 µA, Standby Current: Typ. 28 µA

APPLICATIONS

  • General LED Lighting: Down-lights, Base-lights, Ceiling Lights, Exterior Lights
  • Industrial LED Lighting: Image Recognition Devices
  • Stage Lighting and Signage
  • Sports Facility Lighting
  • Ultraviolet (UV) and Infrared (IR) Irradiation Devices
  • Scanners and Handy Terminals
  • Amusement Machines
  • Other Electronic Devices

No. EA-365-221129 SELECTION GUIDE The interface of the DIM pin and the voltage level of the ISET pin are user-selectable options. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R1580NxxxA-TR-FE SOT-23-6 3,000 pcs Yes Yes xxx: Specify the interface of the DIM pin and the voltage level of the ISET pin. 001: ISET Pin Voltage = 0.4 V, DIM Pin Interface = Comparator Input, High Accuracy PWM Signal Threshold Voltage 002: ISET Pin Voltage = 0.8 V, DIM Pin Interface = Comparator Input, High Accuracy PWM Signal Threshold Voltage 003: ISET Pin Voltage = 0.4 V, DIM Pin Interface = Inverter Input BLOCK DIAGRAMS VREGVREG UVLOUVLO TSDTSD LEDON SOURCE GNDISET GATE PULSE CHECK PULSE CHECK LEDON CE LEDON Source OVP Source OVP GATE CHECK GATE CHECK TSD Internal VCC SOVP SOVP TSD Comp Input Analog Dimming- VrefVref VIN DIM VIN VREGVREG UVLOUVLO TSDTSD LEDON SOURCE GND DIM ISET GATE PULSE CHECK PULSE CHECK LEDON CE LEDON Source OVP Source OVP GATE CHECK GATE CHECK TSD Internal VCC SOVP SOVP TSD INV Input Analog Dimming R1580N001A, R1580N002A Block Diagram R1580N003A Block Diagram

No. EA-365-221129 PIN DESCRIPTIONS 6 5 4 1 2 3 (mark side) SOT-23-6 Pin Configuration SOT-23-6 Pin Description Pin No. Pin Name Description

1 ISET Current Setting Pin

2 SOURCE Nch MOSFET Source Input Pin

3 GATE Nch MOSFET Gate Output Pin

4 VIN Power Supply Pin

5 GND Ground Pin

6 DIM PWM Signal Input Pin

No. EA-365-221129 Equivalent Circuits of Individual Pins Equivalent Circuit for DIM Pin Equivalent Circuit for GATE Pin Equivalent Circuit for ISET Pin Equivalent Circuit for SOURCE Pin An ESD diode is connected between the DIM pin and the VIN pin, the GATE pin and the VIN pin, and the ISET pin and the VIN pin. If a voltage is applied to the individual pin while the VIN pin is open, the voltage will flow into the VIN pin via the ESD protection diode and cause an unintended operation of device. To prevent this, apply a voltage to the VIN pin. DIM V IN GATE V IN V IN ISET V IN SOURCE

No. EA-365-221129 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings Symbol Parameter Rating Unit VIN VIN Pin Voltage −0.3 to 36 V VDIM DIM Pin Voltage −0.3 to VIN + 0.3 V VISET ISET Pin Voltage −0.3 to VIN + 0.3 V VSOURCE SOURCE Pin Voltage −0.3 to 6.5 V VGATE GATE Pin Voltage −0.3 to VIN + 0.3 V IDIM DIM Pin Current 20 mA PD Power Dissipation(1) SOT-23-6 JEDEC STD.51-7 660 mW Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Parameter Rating Unit VIN Operating Input Voltage 3.6 to 34 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Refer to POWER DISSIPATION for detailed information.

No. EA-365-221129

ELECTRICAL CHARACTERISTICS

PWM Frequency = 1 kHz, PWM Duty = 100%, unless otherwise noted. The specifications surrounded by a re guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. Symbol Parameter Test Conditions/ Comments Min. Typ. Max. Unit Istandby Standby Current (001, 002) VIN = 34 V, VDIM = 0 V 140 200 µA Standby Current (003) VIN = 34 V, VDIM = 0 V 28 50 µA ISS Supply Current VIN = 34 V, VDIM = 34 V 320 500 µA VUVLO1 UVLO Detector Threshold Voltage VIN Falling 2.8 3.0 V VUVLO2 VIN Rising VUVLO1 +0.15 3.3 V RGATEDOWN GATE Pin Pull-down Resistance VDIM = 0 V 20 kΩ RSOURCEDOWN SOURCE Pin Pull-down Resistance VDIM = 0 V 4 kΩ RISETDOWN ISET Pin Pull-down Resistance VDIM = 0 V 13 kΩ tLEDONDLY LEDON Delay Time VIN = 15 V 5 20 30 msec fDIMMIN Min. PWM Signal Input Frequency VIN = 15 V 500 Hz tMINON Min. PWM Signal ON Time VIN = 15 V 100 nsec IGATEH GATE Pin ”High” Output Current PWM Duty = 100%, VGATE = 4 V, VSOURCE = 0 V 40 80 160 µA IGATEL GATE Pin ”Low” Output Current (001, 003) PWM Duty = 100%, VGATE = 4 V, VSOURCE = 0.5 V 1 mA GATE Pin ”Low” Output Current (002) PWM Duty = 100%, VGATE = 4 V, VSOURCE = 0.9 V 1 mA VSOURCEMAX Max. SOURCE Pin Voltage (001, 003) PWM Duty = 100%, RSET = Open 392 400 408 mV Max. SOURCE Pin Voltage (002) PWM Duty = 100%, RSET = Open 784 800 816 mV VSOURCEMIN Min. SOURCE Pin Voltage (001, 003) PWM Duty = 1.0%, RSET = Open, Ta = 25°C 2.0 4.0 6.0 mV PWM Duty = 1.0%, RSET = Open 1.5 4.0 6.5 mV Min. SOURCE Pin Voltage (002) PWM Duty = 0.5%, RSET = Open, Ta = 25°C 2.0 4.0 6.0 mV PWM Duty = 0.5%, RSET = Open 1.5 4.0 6.5 mV All parameters are tested under the pulse load condition (Tj ≈ Ta = 25°C) except SOURCE Pin Voltage Temperature Coefficient.

No. EA-365-221129 ELECTRICAL CHARACTERISTICS (continued) PWM Frequency = 1 kHz, PWM Duty = 100%, unless otherwise noted. The specifications surrounded by a re guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. Symbol Parameter Test Conditions/ Comments Min. Typ. Max. Unit ∆VSOURCE /∆Ta SOURCE Pin Voltage Temperature Coefficient VIN = 15 V, PWM Duty = 100% ±100 ppm /°C ∆VSOURCE /∆VIN SOURCE Pin Voltage Line Regulation PWM Duty = 100%, RSET = Open 0.01 %/V RINSET ISET Pin Internal Resistance 291 300 309 kΩ IDIM DIM Pin Pull-down Current (001, 002) VDIM = 34 V 1.0 2.0 µA RDIM DIM Pin Pull-down Resistance (003) VDIM = 2 V 200 600 1200 kΩ VTHDIMH PWM Signal Threshold Voltage (001, 002) VIN = 15 V, DIM Rising 1.2 1.3 V VTHDIML VIN = 15 V, DIM Falling 1.0 1.1 V VTHDIMH PWM Signal Threshold Voltage (003) VIN = 15 V, DIM Rising 1.2 V VTHDIML VIN = 15 V, DIM Falling 0.4 V VSOVP1 SOURCE Pin Overvoltage Protection Threshold Voltage (001, 003) VIN = 15 V, Rising 0.56 0.63 0.70 V VSOVP2 VIN = 15 V, Falling 0.51 0.58 0.65 V VSOVP1 SOURCE Pin Overvoltage Protection Threshold Voltage (002) VIN = 15 V, Rising 1.23 1.3 1.37 V VSOVP2 VIN = 15 V, Falling 1.13 1.2 1.27 V TTSD Thermal Shutdown Threshold Temperature Ta Rising 160 °C TTSR Ta Falling 140 °C All parameters are tested under the pulse load condition (Tj ≈ Ta = 25°C) except SOURCE Pin Voltage Temperature Coefficient.

No. EA-365-221129 THEORY OF OPERATION Under Voltage Lockout (UVLO) The UVLO turns the output of the GATE pin low which means the Nch MOSFET is turned off, in the event of the input voltage (VIN) dropping below the UVLO threshold voltage, falling (VUVLO1), so that the whole system will go into the reset state. Short Circuit Detection between the GATE Pin of Nch MOSFET and the DRAIN Pin GATE pin is pulled down by the resistor. When the GATE pin voltage increases 1 V or more at a start-up, the R1580 determines as the short circuit between the GATE pin of Nch MOSFET and the DRAIN pin. When it is determined as the short circuit, the device does not move to the sequence of flowing LED current (ILED). Once the short circuit is released, the device moves to the sequence of making a set LED current (ILEDSET) flow. Overvoltage Protection for Source Pin (Source OVP) The SOURCE pin voltage (VSOURCE) of the R1580N001A/ R1580N003A is controlled to be less than 0.7 V by the GATE pin of Nch MOSFET, and VSOURCE of the R1580N002A is controlled to be less than 1.4 V. If VSOURCE exceeds the SOURCE pin OVP threshold voltage, rising (VSOVP1), the device assumes that the external voltage is applied, so it moves to the protection sequence. During the protection sequence, the device turns the output of the GATE pin low which means the Nch MOSFET is turned off. If VSOURCE falls below the SOURCE pin OVP threshold voltage, falling (VSOVP2), the device assumes that the overvoltage conditions is removed and restarts the regulation of Nch MOSFET. In the event of short circuit between the DRAIN pin and the SOURCE pin or the DRAIN pin and GATE pin of Nch MOSFET, VSOURCE rises even if the output of the GATE pin is low. As a result, the current continuously flows into the current sensing resistor (RSNS). If the short circuit current exceeds the rated current of LED, connect a current fuse to the LED array in series. Thermal Shutdown The thermal shutdown turns the output of the GATE pin low which means the Nch MOSFET is turned off if the junction temperature exceeds the thermal shutdown threshold temperature, rising (TTSD). Once the junction temperature falls below the thermal shutdown threshold temperature, falling (T TSR), the device goes into the reset state and restarts the regulation of Nch MOSFET.

No. EA-365-221129 Timing Chart of PWM Signal Timing Chart of PWM Signal The R1580N recognizes that a high signal is sent to the DIM pin during the period of time which starts when the DIM pin voltage (V DIM) exceeds the PWM signal threshold voltage, rising (V THDIMH), and ends when VDIM falls below the PWM signal threshold voltage, falling (VTHDIML). On the contrary, the R1580N recognizes that a low signal is sent to the DIM pin during the period of time which starts when VDIM falls below VTHDIML, and ends when VDIM exceeds VTHDIMH. When V DIM exceeds VTHDIMH, the R1580N starts the operation. After the device start-up, the DIM pin pulse judging circuit starts the operation. The LEDON signal becomes high if the DIM pin pulse is sent for more than the LEDON delay time (tLEDONDLY = Typ. 20 msec) with one of the following conditions: 1. tDIML ≤ 10 μsec & tDIMH ≥ tMINON or VDIM = “H” (PWM Duty ≈ 100%) 2. PWM Frequency (fPWM) ≥ 500 Hz & tDIMH ≥ tMINON When the LEDON signal becomes high, the ISET pin voltage (V ISET) gradually goes up along with the SOURCE pin voltage (VSOURCE). After the PWM signal response time (tDIMDLY), the LED current (ILED) becomes ±5% of a set LED current (ILEDSET). The R1580N goes into standby state and turns the LEDs off by inputting a low signal to the DIM pin. tDIMH VTHDIMH VTHDIML tDIML ts = 1/ fPWM

No. EA-365-221129 1. VDIM = H, PWM Duty ≈ 100%, Refer to Timing Chart of PWM Signal VTHDIMH tLEDONDLY tDIMDLY DIM Pin Voltage (VDIM) SOURCE Pin Voltage (VSOURCE) LED Current (ILED) 2. VDIM = Pulse, PWM Frequency (fPWM) ≥ 500 Hz & tDIMH ≥ tMINON DIM Pin Voltage (VDIM) SOURCE Pin Voltage (VSOURCE) LED Current (ILED) tLEDONDLY tDIMDLY tDIMDLY VTHDIMH PWM Signal Response Time (tDIMDLY) The PWM signal response time (tDIMDLY) can be calculated as follows using the LED current setting resistor (RSET) and the capacitor (CSET). Rset ≠ OPEN: 2.5 x (CSET x (RSET x RINSET) / (RSET + RINSET)) ≤ tDIMDLY [sec] ≤ 3.5 x (CSET x (RSET x RINSET) / (RSET + RINSET)) Rset = OPEN: 2.5 x CSET x RINSET ≤ tDIMDLY [sec] ≤ 3.5 x CSET x RINSET

No. EA-365-221129

APPLICATION INFORMATION

VＬＥＤ R1580NxxxA Typical Application Circuit Recommended Components Symbol Description CIN Bypass Capacitor, 0.1 µF or more, 50 V Rated Voltage, C1608JB1H104K080AA, TDK CSET Capacitor, 0.01 µF or more(1), 6.3 V Rate Voltage RSET LED Current Setting Resistor RSNS Current Sensing Resistor (1) The recommended value for the capacitor can be changed depending on the PWM frequency.

No. EA-365-221129 LED Current Setting at 100% PWM Duty Cycle The LED current (ILED) at PWM duty = 100 % can be programmed by placing a current setting resistor (RSET) between the ISET pin and GND, and a current sensing resistor (R SNS) between the SOURCE pin and GND. When using R SET, note that the variat ion in the I SET internal resistance (RINSET) influences the LED current accuracy. The set LED current (ILEDSET) can be calculated as follows: R1580N001A/ R1580N003A Rset ≠ OPEN: ILEDSET = 0.4 / RSNS × RSET / (RINSET + RSET) Rset = OPEN: ILEDSET = 0.4 / RSNS R1580N002A Rset ≠ OPEN: ILEDSET = 0.8 / RSNS × RSET / (RINSET + RSET) Rset = OPEN: ILEDSET = 0.8 / RSNS For example, with the R1580N001A, if R SET is open and R SNS = 1 Ω, the R SNS current at PWM Duty = 100% will be set to 400 mA. When using RSET, it should be 100 kΩ or more. LED Dimming Control ILED can be controlled using a PWM signal on the DIM pin. ILED can be calculated by using a duty cycle of PWM signal in high state (Hduty) as follows: I LED = Hduty x ILEDSET Hduty should be determined so as to achieve that the pulse width of PWM frequency (f PWM) in high state is more than the minimum on time of PWM input (tMINON). Hduty / f PWM ≥ tMINON

No. EA-365-221129 PWM Frequency The PWM frequency (fPWM) on the DIM pin should be set in the range of 500 Hz to 100 kHz. Placing a capacitor (CSET) and a current setting resistor (RSET) between the ISET pin and GND can attenuate the PWM frequency components in the LED current (ILED). The optimum time constant (τ) varies with fPWM. The optimum time constant (τ) can be calculated as follows using CSET and RSET: τRC [sec] = (CSET x (RSET x RINSET) / (RSET + RINSET)) ≥ 30 [sec] / fPWM [Hz] CSET [μF] ≥ 30 [sec] / fPWM [Hz] x 10 ^ 6 x (RSET [Ω] + RINSET) / (RSET [Ω] x RINSET) ≥ 0.01 [μF] (1) For exmaple, if R SET is open and fPWM = 1 kHz, CSET can be calculated as follows: C SET [μF] ≥ 30 [sec] / 1000 x 10 ^ 6 x 1 / 300 k = 0.1 [μF] ≥ 0.01 [μF] (1) Thus, CSET should be set to 0.1 μF or more. It is important to place CSET between the ISET pin and GND to attenuate fPWM. As mentioned in LED Diming Control , Hduty should be determined on the condition that the pulse width of PWM frequency (fPWM) in high state is more than the min. PWM signal on time (tMINON). It is necessary that fPWM be increased so that Hduty of the required brightness becomes more than tMINON. Also, it is necessary that fPWM be decreased if the high-accuracy dimming in low brightness is required. Capacitor Selection A 0.1-µF or more bypass capacitor (CIN) should be placed between the VIN pin and GND with shortest-distance wiring. D IM Pin Voltage The ESD protection diode for the VIN pin is connected to the DIM pin. If the DIM pin voltage ( VDIM) becomes higher than the VIN voltage (VIN), a large current will flow from the DIM pin to the VIN pin. To prevent this, it is recommended that a resistor be connected to the DIM pin. The resistor connected to the DIM pin filters the voltage waveform of the DIM pin and creates the rounding waveform. As a result, ILED will be deviated from the calculated value. If the deviation of ILED is not in an allowable range, remove the resistor for the DIM pin and make the input voltage lower than V IN, or place a 100- Ω or more resistor ( RIN) between the VIN pin and the primary power source and suppress the current flowing into the DIM pin lower than 20 mA. (1) 0.01 μF or more is recommended.

No. EA-365-221129 Rated Voltage for Nch MOSFET Select an Nch MOSFET with low drain cut-off current to prevent the LEDs to emit light during standby state. The GATE pin voltage (VGATE) may go up to the maximum VIN pin voltage (VIN) level. To prevent the destruction of Nch MOSFET due to VIN becoming higher than the VGS absolute maximum rating of Nch MOSFET, connect a zener diode between the GATE pin and GND. In the event of the LED current (ILED) becoming 0 mA while the LED anode voltage is becoming maximum, the DRAIN pin voltage of Nch MOSFET instantaneously goes up close to the LED anode voltage. To prevent the destruction of Nch MOSFET due to the LED anode voltage becoming higher than the VDS absolute maximum rating of Nch MOSFET, connect a zener diode between the DRAIN pin of Nch MOSFET and GND. Select an Nch MOSFET that can operate within the rated voltage. Thermal Design for Nch MOSFET The heat loss can be influenced by a power loss associated with the potential difference between the DRAIN pin and the SOURCE pin (VDS) and ILED. The power loss in Nch MOSFET (PFET) can be calculated as follows: PFET [W] = VDS x ILED Select an Nch MOSFET that can operate within the rated power . It is recommended that an Nch MOSFET satisfying the following conditions be selected: Tj _FET ≥ θja_FET x P FET + Ta Minimum DRAIN Pin Voltage for Nch MOSFET The minimum DRAIN pin voltage of Nch MOSFET (VDRAIN) can be calculated as follows using the On resistance of Nch MOSFET (RON) and the maximum SOURCE pin voltage (VSMAX): VDRAIN [V] ≥ RON x ILED + VSMAX VSMAX = VSOURCEMAX x RSET / (RSET + RINSET)

No. EA-365-221129 Current Sense Resistor Selection A current sensing resistor (RSNS) should be placed between the SOURCE pin of Nch MOSFET and GND of the device with shortest-distance wiring. To reduce the influence of the wiring resistance on the accuracy of LED current, make the wiring as wide as possible. Choose an appropriate value for RSNS that best fits the application. The power loss generated by RSNS (PSNS) can be calculated as follows. To suppress PSNS, place a current setting resistor (R SET) which reduces the maximum SOURCE pin voltage. R1580N001A/ R1580N003A Rset ≠ OPEN: PSNS [W] = {0.4 x RSET / (RSET + RINSET)} ^ 2 / RSNS Rset = OPEN: PSNS [W] = (0.4 ) ^ 2 / RSNS R1580N002A Rset ≠ OPEN: PSNS [W] = {0.8 x RSET / (RSET + RINSET)} ^ 2 / RSNS Rset = OPEN: PSNS [W] = (0.8) ^ 2 / RSNS

No. EA-365-221129 TYPICAL PERFORMANCE CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. Standby Current vs. Ambient Temp. Supply Current vs. Ambient Temp. R1580N001A, 003A, VIN = 34 V, VDIM = 0 V R1580N001A, VIN = 34 V, VDIM = 34 V R1580N001A, PWM Duty = 100%, RSET = OPEN R1580N002A, PWM Duty = 100%, RSET = OPEN R1580N001A, PWM Duty = 1.0%, RSET = OPEN R1580N002A, PWM Duty = 0.5%, RSET = OPEN 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 Istanby [μA] Ta [°C] 100 150 200 250 300 350 400 450 500 -50 -25 0 25 50 75 100 125 ISS [μA] Ta [°C] 390 392 394 396 398 400 402 404 406 408 410 -50 -25 0 25 50 75 100 Vsource[mV] Ta [°C] 390 392 394 396 398 400 402 404 406 408 410 -50 -25 0 25 50 75 100 Vsource[mV] Ta [°C] 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 25 50 75 100 Vsource[mV] Ta [°C] 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 25 50 75 100 Vsource[mV] Ta [°C] 003A 001A

No. EA-365-221129 Max. SOURCE Pin Voltage vs. Input Voltage Max. SOURCE Pin Voltage vs. Input Voltage R1580N001A, PWM Duty = 100%, RSET = OPEN R1580N002A, PWM Duty = 100%, RSET = OPEN 390 392 394 396 398 400 402 404 406 408 410 0 5 10 15 20 25 30 35 40 Vsource[mV] Vin [V] 780 785 790 795 800 805 810 815 820 0 5 10 15 20 25 30 35 40 Vsource[mV] Vin [V]

POWER DISSIPATION SOT-23-6 PD-SOT-23-6-(85125)-JE-A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 7 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 660 mW Thermal Resistance (θja) θja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 100 200 300 400 500 600 700 800 0 25 50 75 100 125 Power Dissipation PD (mW) Ambient Temperature (°C) 660

PACKAGE DIMENSIONS SOT-23-6 DM-SOT-23-6-JE-B i SOT-23-6 P ackage Dimensions (Unit: mm) 2.9±0.2 1.9±0.2 (0.95) (0.95) 6 4 1 2 3 1.6-0.1 +0.2 2.8±0.3 0.4-0.2 Unit : mm +0.1 0.8±0.1 1.1-0.1 +0.2 0 to 0.1 0.15-0.05 +0.1 0.2MIN.

i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number SOT-23-6 Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or our distributor before attempting to use AOI.

Product Name   R1580N001A FA Lot No. R1580N002A FB Lot No. R1580N003A FC Lot No.

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  • Various Safety Devices
  • Traffic control system
  • Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/