R1540N001B-TR-FE

R1540X NISSHINBO | Alldatasheet

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Technical content

High Noise Immunity 42 V Input Voltage 70 mA Voltage Tracker NO.EA-513-200728 The R1540x is a voltage tracker featuring input voltage in the range of 3.5 V to 42 V. Highly accurate output voltage which attributes to CE/ADJ pin achieves successful sequence control of the integrated off -board sensor module. Strong enough not to require the circuit to avoid external electromagnetic interference (EMI) and this contributes space saving.  Excellent noise immunity provides effective shielding against EMI.  Lower stand-by current consumption leads to energy saving of the whole system to prolong battery life.  Response to requirements for sequence control in the system with integrated sensors.

• Input Voltage Range (Maximum Rating): 3.5 V to 42.0 V (50.0 V)
• Supply Current: Typ. 60 µA
• Standby Current: Typ. 0.1 μA
• Tracking Voltage Range: 2.2 V to 14 V
• Tracking Voltage Accuracy: ± 15 mV (−40°C ≤ Ta ≤ 105°C, VCE/ADJ = 5 V)
• Output Current 70 mA
• Ripple Rejection: Typ. 80 dB (f = 100 Hz)
• Protections: Thermal Shutdown, Output Current Limiting and Short-circuit Current Limiting SOT-23-5 2.9 x 2.8 x 1.1 (mm) HSOP-8E 5.2 x 6.2 x 1.45 (mm) C IN: 0.1uF, COUT: 10µF, C CE/ADJ: 0.1uF, Ceramic capacitor Product Name Package Quantity per Reel R1540N001B-TR-FE SOT-23-5 3,000 pcs R1540S001B-E2-FE HSOP-8E 1,000 pcs
• Off-board sensors and power supply systems for analog to digital converters (ADC) KEY BENEFITS KEY SPECIFICATIONS OVERVIEW

APPLICATIONS

NO.EA-513-200728 SELECTION GUIDE R1540x offers selectable packages corresponding to user’s purpose. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R1540N001B-TR-FE SOT-23-5 3,000 pcs Yes Yes R1540S001B-E2-FE HSOP-8E 1,000 pcs Yes Yes BLOCK DIAGRAM VDD VOUT CE/ ADJ GND Current Limit Short Protection Thermal Shutdown Circuit R1540x001B Block Diagram

NO.EA-513-200728 PIN DESCRIPTIONS 4 5 2 3 (mark side) Top View Bottom View 5 8 6 4 2 1 3 8 6 5 7 1 3 4 2 *( 1 ) R1540N (SOT-23-5) Pin Configuration R1540S (HSOP-8E) Pin Configuration1 R1540N Pin Descriptions Pin No. Symbol Description

1 CE/ADJ Chip Enable and Adjustment Pin (Active - High)

2 GND(2) Ground Pin

3 VDD Input Pin

4 VOUT Output Pin

5 GND(2) Ground Pin

Pin No. Symbol Description

1 VDD Input Pin

2 VDD Input Pin

3 NC No Contact

4 CE/ADJ Chip Enable and Adjustment Pin (Active - High)

6 GND(2) Ground Pin

7 NC No Contact

8 VOUT Output Pin

(1) The tab on the bottom of the package is substrate potential (GND). It is recommended that this tab to be connected to the ground plane on the board. (2) The GND pins must be wired together on the board.

NO.EA-513-200728 INTERNAL EQUIVALENT CIRCUIT FOR EACH PIN CE/ADJ VOUT Pin Internal Equivalent Circuit Diagrams CE/ADJ Pin Internal Equivalent Circuit Diagrams VOUT Driver

NO.EA-513-200728 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Rating Unit VIN Input Voltage −0.3 to 50 V Peak Voltage (1) 60 V VCE/ADJ CE/ADJ Pin Input Voltage −0.3 to 50 V VOUT VOUT Pin Output Voltage −0.3 to VIN + 0.3 ≤ 50 V IOUT Output Current 95 mA PD Power Dissipation (2) JEDEC STD. 51 SOT-23-5 660 mW HSOP-8E 2900 Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Rating Unit VIN Input Voltage 3.5 to 42 V VCE/ADJ CE/ADJ Input Pin Voltage 0 to 14 V Ta Operating Temperature Range −40 to 105 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such ratings by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Duration time: 200 ms. (2) Refer to POWER DISSIPIATION for detailed information

NO.EA-513-200728

ELECTRICAL CHARACTERISTICS

CIN = 0.1 μF, COUT = 10 μF, VCE/ADJ = 5.0 V and VIN = 14.0 V, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40°C ≤ Ta ≤ 105°C. R1540x001B Electrical Characteristics (Ta = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit ISS Supply Current VIN = 14 V, IOUT = 0 mA 60 100 μA Istandby Standby Current VIN = 42 V, VCE/ADJ = 0 V 0.1 1.0 μA ∆VO Tracking Voltage Accuracy

8 V ≤ VIN ≤ 24 V

1 mA ≤ IOUT ≤ 70 mA VCE/ADJ = 5.0 V -15 15 mV

6 V ≤ VIN ≤ 42 V

1 mA ≤ IOUT ≤ 10 mA VIN = 15 V IOUT = 1 mA 2.2 V ≤ VCE/ADJ ≤ 5.0 V -15 mV 5.0 V < VCE/ADJ ≤ 14.0 V -18 18 ∆VOUT /∆IOUT Load Regulation VIN = 8 V, 1 mA ≤ IOUT ≤ 70 mA -2 2 mV ∆VOUT /∆VIN Line Regulation 6 V ≤ VIN ≤ 42 V, IOUT = 1 mA -8 8 mV ∆VOUT /∆VCE/ADJ CE/ADJ Regulation 2.2 V ≤ VCE/ADJ ≤ 14 V, IOUT = 1 mA, VIN = 15 V -1 1 mV/V VDIF Dropout Voltage IOUT = 70 mA 1.3 2.1 V ILIM Output Current Limit VIN = 8 V 80 120 mA ISC Short Current Limit VIN = 8 V , VOUT = 0 V 20 40 mA VCE/ADJH CE/ADJ Pin Input Voltage, high VIN = 15 V 2.0 14 V VCE/ADJL CE/ADJ Pin Input Voltage, low VIN = 42 V 0 1.0 V IPD CE/ADJ Pin Pull Down Current VIN = 42 V, VCE/ADJ = 2 V 0.2 1.0 μA TTSD Thermal Shutdown Detection Temperature Junction Temperature 150 165 °C TTSR Thermal Shutdown Released Temperature Junction Temperature 128 135 °C All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C).

NO.EA-513-200728 TYPICAL APPLICATION TYPICAL APPLICATION CIN R1540x VDD VOUT CE/ADJ GND COUT CIN = Ceramic 0.1 µF COUT = Ceramic 10 µF CCE/ADJ = Ceramic 0.1 µF CCE/ADJ R1540x Typical Application TECHNICAL NOTES Phase Compensation R1540x adopts capacitance and Equivalent Series Resistance (ESR) for phase compensation to ensure stable operation even with load varying current. For this end, the capacitor of 10 μF or more is essential. A certain amount of ESR may cause unstable output voltage. Fully take temperature and frequency characteristics into consideration when evaluating the circuit. Place the capacitor of 0.1 μF or more between VDD and GND with using short leads and short printed circuit traces. PCB Layout SOT-23-5 package: connect Nos. 2 and 5 of GND pin together. HSOP-8E package: connect Nos. 5 and 6 of GND pin together.

NO.EA-513-200728 ESR vs. output current characteristics Using ceramic output capacitor is highly recommended although availability of another low -ESR capacitors. The mutual relations between the output current (IOUT) causes noise under the specified value and the ESR are indicated below for reference. CIN R1540x VDD VOUT CE/ADJ GND COUT CIN = Ceramic 0.1 µF COUT = Ceramic 10 µF ESR IOUT Measurement Conditions Frequency Band: 10 Hz to 2 MHz Temperature: −40°C to 105°C Shaded portion: Noise level is 40 μV (average) or below Capacitors: CIN = 0.1 μF of Ceramic, COUT = 10 μF of Ceramic R1540x001B

NO.EA-513-200728 THEORY OF OPERATION Thermal Shutdown Thermal Shutdown occurs when the device ’s junction temperature reaches 165°C (Typ.) at which point the regulator will automatically shut down. Then the regulator resumes from the stand -by state when the junction temperature decreases below 135°C (Typ.). Unless the cause of overheating is eliminated, the device cycles on and off to generate pulse output.

NO.EA-513-200728

APPLICATION INFORMATION

Typical Application for IC Chip Breakdown Prevention A sudden surge of current flowing through the VOUT pin during a short to GND leads to negative voltage due to resonance generated between the impedance of the wire and the output capacitor, C2. Consequently, large short-circuit current may destroy the IC or a load device in some types of pattern boards. It is highly recommended to connect schottky diode, D1, between VOUT pin and GND to prevent the IC from being destroyed. CIN R1540x VDD VOUT CE/ADJ GND COUT CIN = Ceramic 0.1 µF COUT = Ceramic 10 µF VOUT R1540x Typical Application for IC Chip Breakdown Prevention

NO.EA-513-200728 Electromagnetic Noise Immunity An output voltage may linearly varies in some regulators due to electromagnetic noise. R1540x adopts the techniques on its circuits to prevent this voltage variation. The noise immunity test indicated below was conducted to confirm that R1540x is fairly robust to electromagnetic noise over a broad frequency band. DC power supply：apply VIN = 14 V, VCE/ADJ = 5 V Digital multi meter：measure the output DC voltage of R1540 Signal generator：apply high frequency signal of 150 kHz to1 GHz Power meter：measure the intensity of signal so as to sense the surface electric field intensity of 800 V/m Directional coupler Signal generator Power amp Power meter Power sensor (forward) Power sensor (reflection) TEM cell R1540x DC power supply Digital multi meter 50ohm termination Block Diagram for Immunity Test Based on IEC 62132-2 TEM cell EMS Characteristics (TEMcell Applied：800 V/m) VIN = 14 V, VCE/ADJ = 5 V, Surface Electric Field Intensity = 800 V/m 3.5 4.5 5.5 0.1 1 10 100 1000 OutputVoltage VOUT [V] frequency [MHz]

NO.EA-513-200728 TYPICAL CHARACTERISTICS Typical Characteristics are intended to be used as reference data, they are not guaranteed 1) Output voltage vs Output Current CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C 2) Output voltage vs Input Voltage CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF , Ta=25°C VIN = 0 V,<=>42 V, VCE/ADJ = 5 V VIN = 0 V,<=> 8 V, VCE/ADJ = 5 V 3) Supply Current vs Input Voltage CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF , Ta = 25°C VIN = 0 V <=>42 V, VCE/ADJ = 5 V, IOUT = 0 mA

NO.EA-513-200728 4) Supply Current vs Temperature CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF VIN = 14 V, VCE/ADJ = 5 V, IOUT = 0 mA 5) Tracking Accuracy vs Temperature CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF VIN = 14 V, VCE/ADJ = 5 V, IOUT = 1 mA 6) Tracking Accuracy vs Input Voltage CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta=25°C VCE/ADJ = 2 V, VIN = 3 V <=> 42 V VCE/ADJ = 5 V, VIN = 6 V <=> 42 V 100 -40 -20 0 20 40 60 80 100 Supply Current Iss[uA] Temperature Ta [℃] -40 -20 0 20 40 60 80 100 Tracking Accuracy ΔVo [mV] Temperature Ta [℃]

NO.EA-513-200728 7) Tracking Accuracy vs Load Current CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C VCE/ADJ = 2 V, IOUT = 1mA <=> 70 mA VCE/ADJ = 5 V, IOUT = 1mA <=> 70 mA 8) Tracking Accuracy vs CE/ADJ Voltage CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C VIN = 15 V, VCE/ADJ = 2.4 V <=> 14 V, IOUT = 1 mA 9) Dropout Voltage vs Output Current CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta=25°C VIN = 0 V <=> 22 V, VCE/ADJ = 5 V 200 400 600 800 1000 1200 1400 0 10 20 30 40 50 60 70 DropOutVoltage VDIF[mV] OutputCurrent Iout [mA] Ta=-40℃ Ta=25℃ Ta=105℃

NO.EA-513-200728 10) Dropout Voltage vs CE/ADJ Voltage CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta=25°C VIN = 0 V <=>22 V, IOUT=70 mA 11) Equivalent Series Resistance vs Output Current CIN = Ceramic 0.1 µF, COUT = Ceramic 10µF, Ta=25°C VIN = 4 V <=> 42 V, VCE/ADJ = 2 V VIN = 7 V <=> 42 V, VCE/ADJ = 5 V 12) Ripple Rejection vs Input Voltage CIN = none, COUT = Ceramic 10 µF, Ta = 25°C VIN = 5 V <=> 15 V, VCE/ADJ = 5 V

NO.EA-513-200728 13) Ripple Rejection vs Frequency CIN = none, COUT = Ceramic 10 µF, Ta = 25°C VIN = 14 V, VCE/ADJ = 2 V 14) Load Transient Response CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C VIN=14 V, IOUT = 1 mA <=> 50 mA, tR = tF = 1us 15) Input Transient Response CIN = none, COUT = Ceramic 10 µF, Ta = 25°C

NO.EA-513-200728 16) Turn-on Speed with CE/ADJ pin CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C VIN=14 V, VCE/ADJ = 0 V => 5 V 17) Turn-off Speed with CE/ADJ pin CIN = Ceramic 0.1 µF, COUT = Ceramic 10µF, Ta = 25°C VIN=14 V, VCE/ADJ = 5 V => 0 V 18) CE/ADJ Excess/Inrush Current CIN = none, COUT = Ceramic 10µF, Ta = 25°C VIN = 8 V, VCE/ADJ = 2.4 V => 5 V VIN = 8 V, VCE/ADJ = 5 V=> 2.4 V

NO.EA-513-200728 19) Load Dump CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C VCE/ADJ = 5 V 20) Cranking CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C VCE/ADJ = 5 V, IOUT = 1 mA VCE/ADJ = 5 V, IOUT = 50 mA VCE/ADJ = 5 V, IOUT = 1 mA VCE/ADJ = 5 V, IOUT = 50 mA

NO.EA-513-200728 Test Circuit R1540x circuit for measuring Typical Characteristics Measurement Components of Typical Characteristics Symbol Capacitance Measurement item Manufacturer Parts number CIN 0.1 μF All TDK CGA4J2X7R2A104K125AA COUT 10 μF All TDK CGA6P1X7R1E106K CIN R1540x VDD VOUT CE/ADJ GND COUT CIN = Ceramic 0.1 µF COUT = Ceramic 10 µF CCE/ADJ = Ceramic 0.1 µF CCE/ADJ

POWER DISSIPATION SOT-23-5 Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 7 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 660 mW Thermal Resistance (θja) θja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 100 200 300 400 500 600 700 800 0 25 50 75 100 125 Power Dissipation PD (mW) Ambient Temperature (°C) 660 105

PACKAGE DIMENSIONS SOT-23-5 Ver. A i 2.9±0.2 1.9±0.2 (0.95) (0.95) 5 4 1 2 3 1.6-0.1 +0.2 2.8±0.3 0.4±0.1 0.8±0.1 1.1±0.1 0～0.1 0.15-0.05 +0.1 0.2min.

Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.3 mm × 21 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 2900 mW Thermal Resistance (ja) ja = 34.5°C/W Thermal Characterization Parameter (ψjt) ψjt = 10°C/W ja: Junction-to–ambient thermal resistance. ψjt: Junction–to-top of package thermal characterization parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 500 1000 1500 2000 2500 3000 3500 0 25 50 75 100 125 Power Dissipation (mW) Ambient Temperature (°C) 2900 105

PACKAGE DIMENSIONS HSOP-8E i

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