R1524H100B-T1-YE

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200 mA 36 V Input Ultra Low Supply Current VR for Industrial Applications No. EA-354-200310 OUTLINE The R1524x is a CMOS-based ultra low supply current voltage regulator featuring 200 mA output current and 36 V input voltage. This device consists of an Output Short-circuit Protection Circuit, an Over-current Protection Circuit, and a Thermal Shutdown Circuit in addition to the basic regulator circuits. The operating temperature range is between −50°C to 125°C, and the maximum input voltage is 36 V. All these features allow this device to become an ideal power source for equipments used under high-temperature conditions. The output voltages are internally fixed (refer to SELECTION GUIDE). The output voltage accuracy is ±0.6%. The packages for this device range from high-density mounting to ultra high wattage. The R1524x is offered in five packages; a 5-pin SOT-23-5, a 5-pin SOT-89-5, a 6-pin HSOP-6J, a 6-pin DFN(PLP)1820-6, and an 8- pin HSOP-8E package. This is a high-reliability semiconductor device for industrial applications (-Y) that has passed both the screening at high temperature and the reliability test with extended hours. This line of products operate in a wide temperature range from low temperature to high temperature to support harsh environment app lications.

FEATURES

• Input Voltage Range (Maximum Rating) ············· 3.5 V to 36 V (50 V)

5.5 V /

10.0 V / 10.5 V / 11.0 V / 12.0 V *Contact our company sales representatives for other voltages.

• Output Voltage Temperature-Drift Coefficient ······· Typ. ±60 ppm/°C
• Built-in Output Short-circuit Protection Circuit ······ Typ. 80 mA
• Ceramic capacitors are recommended DFN(PLP)1820-6, HSOP-8E

APPLICATIONS

• Industrial equipments such as FAs and smart meters
• Equipments used under high-temperature conditions such as surveillance camera and vending machine
• Equipments accompanied by self-heating such as motor and lighting

No. EA-354-200310 SELECTION GUIDE The set output voltage and the package type are user-selectable. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R1524NxxxB-TR-YE SOT-23-5 3,000 pcs Yes Yes R1524HxxxB-T1-YE SOT-89-5 1,000 pcs Yes Yes R1524SxxxB-E2-YE HSOP-6J 1,000 pcs Yes Yes R1524KxxxB-TR-Y DFN(PLP)1820-6 5,000 pcs Yes Yes R1524SxxxH-E2-YE HSOP-8E 1,000 pcs Yes Yes xxx: Specify the set output voltage (VSET)

1.8 V (018)

*Contact our company sales representatives for other voltages. BLOCK DIAGRAM VDD VOUT CE GND Current Limit Short Protection Vref Thermal Shutdown Circuit R1524x Block Diagram

No. EA -354-200310 PIN DESCRIPTIONS 4 5 2 3 (mark side) 1 3 5 4 1 3 6 4 SOT-23-5 Pin Configuration SOT-89-5 Pin Configuration HSOP-6J Pin Configuration Top View Bottom View 6 5 4 1 2 3 4 5 6 3 2 1 (1) Top View Bottom View 5 8 6 4 2 1 3 8 6 5 7 1 3 4 2 (1) DFN(PLP)1820-6 Pin Configuration HSOP-8E Pin Configuration SOT-23-5 Pin Descriptions Pin No. Symbol Description

1 GND(2) Ground Pin

2 GND(2) Ground Pin

3 CE Chip Enable Pin (Active-high)

4 VOUT Output Pin

5 VDD Input Pin

Pin No. Symbol Description

1 VOUT Output Pin

2 GND(3) Ground Pin

4 GND(3) Ground Pin

(1) The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate level). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left open. (2) The GND pin must be wired together when it is mounted on board. (3) The GND pin must be wired together when it is mounted on board.

No. EA-354-200310 HSOP-6J Pin Descriptions Pin No. Symbol Description

2 GND(1) Ground Pin

4 GND(1) Ground Pin

5 GND(1) Ground Pin

6 VDD Input Pin

DFN(PLP)1820-6 Pin Descriptions Pin No. Symbol Description

1 CE Chip Enable Pin (Active-high)

2 NC No Connection

3 GND Ground Pin

4 VDD Input Pin

5 NC No Connection

6 VOUT Output Pin

Pin No. Symbol Description

3 NC No Connection

4 CE Chip Enable Pin (Active-high)

5 GND Ground Pin

6 NC No Connection

7 NC No Connection

8 VDD Input Pin

PIN EQUIVALENT CIRCUIT DIAGRAMS VOUT Driver CE VOUT Pin CE Pin (1) The GND pin must be wired together when it is mounted on board.

No. EA -354-200310 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings Symbol Item Rating Unit VIN Input Voltage −0.3 to 50 V VIN Peak Input Voltage(1) 60 V VCE Input Voltage (CE Pin) −0.3 to 50 V VOUT Output Voltage −0.3 to VIN + 0.3 ≤ 50 V IOUT Output Current 300 mA PD Power Dissipation(2) (JEDEC STD.51-7 Test Land Pattern) SOT-23-5 830 mW SOT-89-5 3200 HSOP-6J 3400 DFN(PLP)1820-6 2700 HSOP-8E 3600 Tj Junction Temperature −50 to 150 °C Tstg Storage Temperature Range −55 to 150 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Item Rating Unit VIN Input Voltage 3.5 to 36 V Ta Operating Temperature Range −50 to 125 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions . The semiconductor devices cannot operate normally over the recommended operating conditions , even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Duration time: 200 ms (2) Refer to POWER DISSIPATION for detailed information.

No. EA-354-200310

ELECTRICAL CHARACTERISTICS

CIN = COUT = 0.1 μF, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -50°C ≤ Ta ≤ 125°C. R1524x (-Y/-YE) (Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit ISS Supply Current VIN = 14 V IOUT = 0 mA VSET ≤ 5.0 V 2.2 6.5 μA 5.0 V < VSET 2.5 6.8 Istandby Standby Current VIN = 36 V, VCE = 0 V 0.1 1.0 μA VOUT Output Voltage VSET + 1 V(1) ≤ VIN ≤

36 V, IOUT = 1 mA

V ∆VOUT /∆IOUT Load Regulation VIN = VSET + 3.0 V 1 mA ≤ IOUT ≤ 200 mA Refer to the Product-specific ∆VOUT /∆VIN Line Regulation VSET + 1 V(1) ≤ VIN ≤ VSET < 3.3 V -20 5 20 mV 3.3 V ≤ VSET -0.02 0.01 0.02 %/V VDIF Dropout Voltage IOUT = 200 mA Refer to the Product-specific ILIM Output Current Limit VIN = VSET + 3.0 V 220 350 420 mA ISC Short Current Limit VIN = 3.5 V, VOUT = 0 V 60 80 110 mA VCEH CE Pin Input Voltage, high VIN = VSET + 1 V(1) 2.0 36 V VCEL CE Pin Input Voltage, low VIN = 36 V 0 1.0 V IPD CE Pull-down Current VIN = 36 V, VCE = 2 V 0.2 0.6 μA TTSD Thermal Shutdown Detection Temperature Junction Temperature 160 °C TTSR Thermal Shutdown Released Temperature Junction Temperature 135 °C All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C). (1) VSET ≤ 2.5 V, VIN = 3.5 V

No. EA -354-200310 The specifications surrounded by are guaranteed by design engineering at -50°C ≤ Ta ≤ 125°C. R1524x (-Y/-YE) Product-specific Electrical Characteristics (Ta = 25°C) Product Name VOUT (V) (Ta = 25°C) VOUT (V) (−50°C ≤ Ta ≤ 125°C) ∆VOUT/∆IOUT (mV) VDIF (V) -10 10 40 1.6 2.5 0.8 2.0 0.6 1.2 -18 18 72 0.5

No. EA-354-200310 THEORY OF OPERATION Thermal Shutdown R1524x has a built-in thermal shutdown circuit, which stops the regulator operation if the junction temperature of this device increases to 1 60°C (Typ.) or higher. If the temperature drops to 135°C (Typ.) or lower, the regulator restarts the operation. Unless eliminating the overheating problem, the regulator turns on and off repeatedly and as a result, a pulse shaped output voltage is generated.

APPLICATION INFORMATION

C1 = Ceramic 0.1 µF C2 = Ceramic 0.1 µF VOUT CE Control R1524x Typical Applications TYPICAL APPLICATION FOR IC CHIP BREAKDOWN PREVENTION C1 R1524x VDD VOUT CE GND C1 = Ceramic 0.1 µF C2 = Ceramic 0.1 µF VOUT CE Control R1524x Typical Application for IC Chip Breakdown Prevention When a sudden surge of electrical current travels along the VOUT pin and GND due to a short-circuit, electrical resonance of a circuit involving an output capacitor (C2) and a short circuit inductor generates a negative voltage and may damage the device or the load devices. Connecting a schottky diode (D1) between the V OUT pin and GND has the effect of preventing damage to them.

No. EA -354-200310 TECHNICAL NOTES Phase Compensation In the R1524x, phase compensation is provided to secure stable operation even when the load current is varied. For this purpose, make sure to use 0.1 μF or more of a capacitor (C2). In case of using a tantalum type capacitor and the ESR (Equivalent Series Resistance) value of the capacitor is large, the output might be unstable. Evaluate the circuit including consideration of frequency characteristics. Connect 0.1 μF or more of a capacitor (C1) between V DD and GND, and as close as possible to the pins. PCB Layout For SOT-23-5 package type, wire the following GND pins together: No. 1 and No. 2 For SOT-89-5 package type, wire the following GND pins together: No. 2 and No. 4. For HSOP-6J package type, wire the following GND pins together: No. 2, No. 4, and No. 5.

No. EA-354-200310 TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 1) Output Voltage vs. Output Current (Ta = 25°C) R1524x018B R1524x033B R1524x050B R1524x090B R1524x120B 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 100 200 300 400 Output Voltage VOUT (V) Output Current IOUT (mA) VIN=3.8V VIN=4.8V 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 0 100 200 300 400 Output Voltage VOUT (V) Output Current IOUT (mA) VIN=5.3V 6.3V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 100 200 300 400 Output Voltage VOUT (V) Output Current IOUT (mA) VIN=7V 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 100 200 300 400 Output Voltage VOUT (V) Output Current IOUT (mA) VIN=11V 12V 0 100 200 300 400 Output Voltage VOUT (V) OutputCurrent IOUT (mA) VIN=14V VIN=15V

No. EA -354-200310 2) Output Voltage vs. Input Voltage (Ta = 25°C) R1524x018B R1524x033B R1524x050B R1524x090B R1524x120B 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 1 2 3 4 5 6 Output Voltage VOUT (V) Input Voltage VIN (V) IOUT=1mA 50mA 100mA 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 Output Voltage VOUT (V) Input Voltage VIN (V) IOUT=1mA 50mA 100mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage VOUT (V) Input Voltage VIN (V) IOUT=1mA 50mA 100mA 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 1 2 3 4 5 6 7 8 9 10 11 12 Output Voltage VOUT (V) Input Voltage VIN (V) IOUT=1mA 50mA 100mA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 OutputVoltage VOUT[V] InputVoltage VIN[V] IOUT=1mA 50mA 100mA

No. EA-354-200310 3) Supply Current vs. Temperature R1524x018B R1524x033B R1524x050B R1524x090B R1524x120B -40-25 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Supply Current Iss (μA) Ta (°C) VIN = 14V -40-25 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Supply Current Iss (μA) Ta (°C) VIN = 14V -40-25 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Supply Current Iss (μA) Ta (°C) VIN = 14V -40-25 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Supply Current Iss (μA) Ta (°C) VIN = 14V -40-25 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Supply Current Iss (μA) Ta (℃) VIN = 14V

No. EA -354-200310 4) Supply Current vs. Input Voltage R1524x018B R1524x033B R1524x120B 5) Output Voltage vs. Temperature (IOUT = 1mA) R1524x018B R1524x033B 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 6 12 18 24 30 36 Supply Current ISS (μA) Input Voltage VIN (V) Ta=-40°C 25°C 125°C 0 6 12 18 24 30 36 Supply Current Iss (μA) Input Voltage VIN (V) Ta=-40°C 25°C 125°C 0 6 12 18 24 30 36 Supply Current ISS (uA) Input Voltage VIN (V) Ta=-40℃ Ta=25℃ Ta=125℃ -40-25 0 25 50 75 100 1251.764 1.782 1.800 1.818 1.836Output Voltage VOUT (V) Ta (°C) VIN = 14V -40-25 0 25 50 75 100 1253.234 3.267 3.300 3.333 3.366Output Voltage VOUT (V) Ta (°C) VIN = 14V

No. EA-354-200310 R1524x050B R1524x090B R1524x120B 6) Dropout Voltage vs. Output Current R1524x018B R1524x033B -40-25 0 25 50 75 100 1254.900 4.950 5.000 5.050 5.100Output Voltage VOUT (V) Ta (°C) VIN = 14V -40-25 0 25 50 75 100 1258.820 8.910 9.000 9.090 9.180Output Voltage VOUT (V) Ta (°C) VIN = 14V -40-25 0 25 50 75 100 125 11.76 11.88 12.00 12.12 12.24Output Voltage VOUT (V) Ta (℃) VIN = 14V 0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 Dropout Voltage VDIF (V) Output Current IOUT (mA) Ta=-40°C 25°C 125°C 0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 Dropout Voltage VDIF (V) Output Current IOUT (mA) Ta=-40°C 25°C 125°C

No. EA -354-200310 R1524x050B R1524x090B R1524x120B 7) Dropout Voltage vs. Output Voltage (Ta = 25°C) 0.0 0.5 1.0 1.5 0 50 100 150 200 Dropout Voltage VDIF (V) Output Current IOUT (mA) Ta=-40°C 25°C 125°C 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 Dropout Voltage VDIF (V) Output Current IOUT (mA) Ta=-40°C 25°C 125°C 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 Dropout Voltage VDIF (V) Output Current IOUT (mA) Ta=-40℃ Ta=25℃ Ta=125℃ 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 4 5 6 7 8 9 10 11 12 Dropout Voltage VDIF (V) Output Voltage VOUT (V) Iout=1mA 50mA 100mA 200mA

No. EA-354-200310 8) Ripple Rejection vs. Input Voltage (Ta = 25°C, Ripple = 0.2 Vpp) R1524x018B R1524x033B R1524x050B R1524x090B R1524x120B 1 3 5 7 9 11 13 15 Ripple Rejection RR (dB) Input Voltage VIN (V) Ripple Rejection Ratio RR (dB) Input Voltage VIN (V) f=100Hz 1kHz 10kHz 100kHz IOUT=50mA Ripple Rejection Ratio RR (dB) Input Voltage VIN (V) f=100Hz 1kHz 10kHz 100kHz IOUT=50mA Ripple Rejection Ratio RR (dB) Input Voltage VIN (V) f=100Hz 1kHz 10kHz 100kHz IOUT=50mA IOUT=50mA f=100Hz 1kHz 10kHz 100kHz Ripple Rejection Ratio RR (dB) Input Voltage VIN (V) f=100Hz 1kHz 10kHz 100kHz IOUT=50mA

No. EA -354-200310 9) Ripple Rejection vs. Frequency (Ta = 25°C, Ripple = 0.2 Vpp) R1524x018B R1524x033B R1524x050B R1524x090B R1524x120B 0.01 0.1 1 10 100 1000 Ripple Rejection (dB) Frequency (kHz) IOUT=1mA 50mA 100mA VIN = 3.8V 0.01 0.1 1 10 100 1000 Ripple Rejection Ratio RR (dB) Frequency (kHz) VIN = 5.3V IOUT=1mA 50mA 100mA 0.01 0.1 1 10 100 1000 Ripple Rejection Ratio RR (dB) Frequency (kHz) VIN = 7.0V IOUT=1mA 50mA 100mA 0.01 0.1 1 10 100 1000 Ripple Rejection Ratio RR (dB) Frequency (kHz) VIN = 11.0V IOUT=1mA 50mA 100mA 0.01 0.1 1 10 100 1000 Ripple Rejection Ratio RR (dB) Frequency (kHz) Iout=1mA 50mA 100mA VIN=14.0V

No. EA-354-200310 10) Input Transient Response (Ta = 25°C) R1524x018B R1524x033B R1524x050B R1524x090B R1524x120B 0.8 2.8 4.8 6.8 8.8 10.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -1 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage Output Voltage IOUT=1mA C2 = 0.1 μF 10 μF 1.8 2.3 2.8 3.3 3.8 4.3 4.8 5.3 5.8 6.3 6.8 -1 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage tr=tf=1μs Output Voltage IOUT=1mA C2=0.1μF 10μF 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 -1 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage tr=tf=1μs Output Voltage IOUT=1mA C2=0.1μF 10μF 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 -1 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage tr=tf=1μs Output Voltage IOUT=1mA C2=0.1μF 10μF 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 -1 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) IOUT=1mA Input Voltage tr=tf=1μs Output Voltage C2=0.1μF 10μF

No. EA -354-200310 11) Load Transient Response (Ta = 25°C) R1524x018B R1524x033B R1524x050B R1524x090B R1524x120B 0.9 1.2 1.5 1.8 2.1 2.4 -1 0 1 2 3 4 5 6 7 8 9 Output Current (mA) Output Voltage VOUT (V) Time (ms) Output Current tr=tf=0.5μs Output Voltage C2=0.1μF 10μF 1mA 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 -100 0 100 200 300 400 500 600 700 800 Output Current IOUT (mA) Output Voltage VOUT (V) Time (µs) Output Current tr=tf=0.5μs Output Voltage C2=0.1μF 1mA 10μF 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 -100 0 100 200 300 400 500 600 700 800 Output Current IOUT (mA) Output Voltage VOUT (V) Time (µs) Output Voltage Output Current tr=tf=0.5μs 1mA C2=0.1μF 10μF 5.4 6.3 7.2 8.1 9.0 9.9 10.8 11.7 12.6 13.5 14.4 -100 0 100 200 300 400 500 600 700 800 Output Current IOUT (mA) Output Voltage VOUT (V) Time (µs) Output Voltage Output Current tr=tf=0.5μs 1mA C2=0.1μF 10μF 7.2 8.4 9.6 10.8 12.0 13.2 14.4 15.6 16.8 18.0 19.2 -100 0 100 200 300 400 500 600 700 800 Output Current IOUT (mA) Output Voltage VOUT (V) Time (μs) 1mA Output Current tr=tf=0.5μs Output Voltage C2=0.1μF 10μF

No. EA-354-200310 12) CE Transient Response (Ta = 25°C) R1524x018B R1524x033B R1524x050B 100 200 300 400 500 600 700 800 900 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) Output Voltage CE Input Voltage Inrush Current C2=10μF C2=0.1μF 3.8V -0.3 0.0 0.3 0.6 0.9 1.2 1.5 1.8 -2 -1 0 1 2 3 4 5 6 7 8 Input Voltage CE (V) Output Voltage VOUT (V) Time (ms) CE Input Voltage Output Voltage C2=10μF, IOUT=1mA C2=0.1μF, IOUT=100mA C2=0.1μF, IOUT=1mA C2=10μF, IOUT=100mA 3.8V 100 200 300 400 500 600 700 800 900 0.0 1.1 2.2 3.3 4.4 5.5 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) Output Voltage C2=0.1μF 10μF Inrush Current CE Input Voltage 1μF 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -2 0 2 4 6 8 10 12 14 Output Voltage VOUT (V) Time (ms) Output Voltage CE Input Voltage C2=10μF IOUT=1mA C2=0.1μF IOUT=100mA C2=10μF,IOUT=100mA & C2=0.1μF,IOUT=1mA 100 200 300 400 500 600 700 800 900 0.0 2.0 4.0 6.0 8.0 10.0 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) Output Voltage C2=0.1μF 10μF Inrush Current CE Input Voltage 1μF 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -2 0 2 4 6 8 10 12 14 Output Voltage VOUT (V) Time (ms) Output Voltage CE Input Voltage C2=10μF IOUT=1mA C2=10μF,IOUT=100mA & C2=0.1μF,IOUT=1mA C2=0.1μF IOUT=100mA

No. EA -354-200310 R1524x090B R1524x120B 13) Power-on Transient Response (Ta = 25°C, VCE = 5 V) R1524x018B R1524x033B 100 200 300 400 500 600 700 800 900 0.0 3.0 6.0 9.0 12.0 15.0 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) Output Voltage C2=0.1μF 10μF Inrush Current CE Input Voltage 1μF 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -2 0 2 4 6 8 10 12 14 Output Voltage VOUT (V) Time (ms) Output Voltage CE Input Voltage5V 0V C2=10μF IOUT=1mA C2=10μF,IOUT=100mA & C2=0.1μF,IOUT=1mA C2=0.1μF IOUT=100mA -100 100 200 300 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) Inrush Current Input Voltage Output Voltage C2=10μF C2=0.1μF 3.8V 100 200 300 400 500 600 700 800 900 0.0 1.6 3.2 4.8 6.4 8.0 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) Output Voltage C2=0.1μF 10μF Inrush Current Input Voltage 5.3V 1μF 100 200 300 400 500 600 700 800 900 0.0 3.0 6.0 9.0 12.0 15.0 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) C2=0.1μF 10μ F CE Input Voltage Output Voltage Inrush Current 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 -2 0 2 4 6 8 10 12 14 Output Voltage VOUT (V) Time (ms) CE Input Voltage Output Voltage C2=10μF, Iout=1mA C2=10μF, Iout=100mA C2=0.1μF, Iout=1mA C2=0.1μF, Iout=100mA

No. EA-354-200310 R1524x050B R1524x090B R1524x120B 14) Load Dump (Ta = 25°C) R1524x018B R1524x033B 100 200 300 400 500 600 700 800 900 0.0 2.0 4.0 6.0 8.0 10.0 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) Output Voltage C2=0.1μF 10μF Inrush Current Input Voltage7V 1μF 100 200 300 400 500 600 700 800 900 0.0 3.0 6.0 9.0 12.0 15.0 Inrush Current (mA) Output Voltage VOUT (V) Time (ms) Output C2=0.1μF 10μF Inrush Current Input Voltage 11V 1μF 1.79 1.80 1.81 1.82 1.83 1.84 -10 0 10 20 30 40 50 60 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage Output Voltage C2=0.1μF 1.8 2.3 2.8 3.3 3.8 4.3 4.8 5.3 5.8 6.3 6.8 -10 0 10 20 30 40 50 60 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage Output Voltage C2=0.1μF 10μF 100 200 300 400 500 600 700 800 900 0.0 3.0 6.0 9.0 12.0 15.0 Inrush Current (mA) OutputVoltage VOUT （V） Time (ms) 14V Output Voltage Input Voltage C2=0.1uF 10uF Inrush Current

No. EA -354-200310 R1524x050B R152 4x090B Time (ms) R 1524x120B 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 -10 0 10 20 30 40 50 60 Input Voltage VIN (V) Output Voltage VOUT (V) Input Voltage Output Voltage C2=0.1μF 10μF 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 -10 0 10 20 30 40 50 60 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage Output Voltage C2=0.1μF 10μF 11.0 11.5 12.0 12.5 13.0 -10 0 10 20 30 40 50 60 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) C2=0.1uF 10uF Input Voltage Output Voltage

No. EA-354-200310 15) Cranking (Ta = 25°C) R1524x050B R1524x090B R1524x120B 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 -1 0 1 2 3 4 5 6 7 8 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage Output Voltage C2=0.1μF 10μF 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 16.5 -1 0 1 2 3 4 5 6 7 8 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage Output Voltage C2=0.1μF 10μF 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 16.5 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) C2=0.1uF 10uF Input Voltage Output Voltage

No. EA -354-200310 Input Transient/Load Transient vs. Output Capacity (C2) R1524 performs a stable operation by using 0.1 µF of ceramic capacitor as the output capacitor. However, the variation of output voltage may not meet the demand of the system when input voltage and load current vary. In such cases, the variation of output voltage can be minimized significantly by using 10 µF or higher ceramic capacitor. When using an electrolytic capacitor for the output line, place the electrolytic capacitor outer side of the ceramic capacitor arranged close to the IC. Input Transient Response Load Transient Response R1524x033B R1524x033B ESR vs. Output Current It is recommended that a ceramic type capacitor be used for this device. However, other types of capacitors having lower ESR can also be used. The relation between the output current (I OUT) and the ESR of output capacitor is shown below. R1524xxxxB VDD VOUT CE IOUT C1 = Ceramic 0.1 μF, C2 = Ceramic 0.1 μF GND ESR 1.8 2.3 2.8 3.3 3.8 4.3 4.8 5.3 5.8 6.3 6.8 -1 0 1 2 3 4 5 6 Input Voltage VIN (V) Output Voltage VOUT (V) Time (ms) Input Voltage tr=tf=1μs Output Voltage IOUT=1mA C2=0.1μF 10μF 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 -100 0 100 200 300 400 500 600 700 800 Output Current IOUT (mA) Output Voltage VOUT (V) Time (µs) Output Current tr=tf=0.5μs Output Voltage C2=0.1μF 1mA 10μF

No. EA-354-200310 R1524x018B R1524x033B R1524x050B R1524x090B R1524x120B Measurement Conditions Frequency Band: 10 Hz to 2 MHz Measurement Temperature: −40°C to 125°C Hatched area: Noise level is 40 μV (average) or below Ceramic Capacitors: CIN = 0.1 μF, Murata, GRM188R71H104JA93D COUT = 0.1 μF, TDK, CGA3E2X7R1E104K 0.01 0.1 100 1000 0 50 100 150 200 Equivalent Series Resistance ESR (Ω) Output Current IOUT (mA) VIN=3.5V to 36V 0.01 0.1 100 1000 0 50 100 150 200 Equivalent Series Resistance ESR (Ω) Output Current IOUT (mA) VIN=3.5V to 36V 0.01 0.1 100 1000 0 50 100 150 200 Equivalent Series Resistance ESR (Ω) Output Current IOUT (mA) VIN=5V to 36V 0.01 0.1 100 1000 0 50 100 150 200 Equivalent Series Resistance ESR (Ω) Output Current IOUT (mA) VIN=9V to 36V 0.01 0.1 100 1000 0 50 100 150 200 Equivalent Series Resistance ESR (Ω) Output Current IOUT (mA) VIN=12V to 36V

POWER DISSIPATION SOT-23-5 Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.3 mm × 7 pcs Measurement Result (Ta = 25°C, Tjmax = 150°C) Item Measurement Result Power Dissipation 830 mW Thermal Resistance (ja) ja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 100 200 300 400 500 600 700 800 900 0 25 50 75 100 125 150 Power Dissipation PD (mW) Ambient Temperature (°C) 830

PACKAGE DIMENSIONS SOT-23-5 Ver. A i 2.9±0.2 1.9±0.2 (0.95) (0.95) 5 4 1 2 3 1.6-0.1 +0.2 2.8±0.3 0.4±0.1 0.8±0.1 1.1±0.1 0～0.1 0.15-0.05 +0.1 0.2min.

POWER DISSIPATION SOT-89-5 Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.3 mm × 13 pcs Measurement Result (Ta = 25° C, Tjmax = 150°C) Item Measurement Result Power Dissipation 3200 mW Thermal Resistance (ja) ja = 38°C/W Thermal Characterization Parameter (ψjt) ψjt = 13°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 500 1000 1500 2000 2500 3000 3500 0 25 50 75 100 125 150 Power Dissipation PD (mW) Ambient Temperature (°C) 3200

PACKAGE DIMENSIONS SOT-89-5 Ver. A i 1.5±0.1 1.5±0.1 0.47±0.1 0.42±0.1 0.42±0.1 1.5±0.1 0.4±0.1 0.4±0.1 0.1 S S 0.3±0.2 0.3±0.2 4 5 3 3 2 1 0.42±0.1 4.5±0.1 1.6±0.2 4.35±0.1 2.5±0.1 0.4±0.3 5 4 1 2 3 φ1.0 1.00±0.2

Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.3 mm × 28 pcs Measurement Result (Ta = 25°C, Tjmax = 150°C) Item Measurement Result Power Dissipation 3400 mW Thermal Resistance (ja) ja = 37°C/W Thermal Characterization Parameter (ψjt) ψjt = 7°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 500 1000 1500 2000 2500 3000 3500 4000 0 25 50 75 100 125 150 Power Dissipation PD (mW) Ambient Temperature (°C) 3400

PACKAGE DIMENSIONS HSOP-6J Ver. A i

POWER DISSIPATION DFN(PLP)1820-6 Ver. B i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.2 mm × 34 pcs Measurement Result (Ta = 25°C, Tjmax = 150°C) Item Measurement Result Power Dissipation 2700 mW Thermal Resistance (θja) θja = 45°C/W Thermal Characterization Parameter (ψjt) ψjt = 18°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 500 1000 1500 2000 2500 3000 0 25 50 75 100 125 150 Power Dissipation PD (mW) Ambient Temperature (°C) 2700

PACKAGE DIMENSIONS DFN(PLP)1820-6 Ver. A i 2.00 1.80 0.25±0.10.25±0.1 0.1NOM. 0.3±0.1 0.5 0.6MAX. A B 0.05

0.05 M AB

S 0.05min 1 2 3 4 5 6 1.6±0.1 1.0±0.1 0.20±0.1

0.05 S Bottom View

DFN(PLP )1820-6 Package Dimensions (Unit: mm) ∗ The tab on the bottom of the package is substrate level (GND). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left floating.

Ver. B i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 21 pcs Measurement Result (Ta = 25°C, Tjmax = 150°C) Item Measurement Result Power Dissipation 3600 mW Thermal Resistance (θja) θja = 34.5°C/W Thermal Characterization Parameter (ψjt) ψjt = 10°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 500 1000 1500 2000 2500 3000 3500 4000 0 25 50 75 100 125 150 Power Dissipation (mW) Ambient Temperature (°C) 3600

PACKAGE DIMENSIONS HSOP-8E i ∗ The tab on the bottom of the package shown by blue circle is substrate potential ( GND). It is recommended that this tab be connected to the ground plane on the board but it is possible to leave the tab floating.

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