R1200 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o 0.5A
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Electrical Characteristics (T=25℃ Unless otherwise specified） RXX00 XX:From 12 to 18 Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =0.5A 2.0 I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta=125℃ 50 R θJ-A Between junction and ambient 55 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 25 R1200 THRU R1800 Item Symbol Unit Conditions Repetitive Peak Reverse Voltage VRRM V 1500 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load,Ta=50℃ 0.5 Surge(Non-repetitive)Forward Current I FSM A 60HZ Half-sine wave,1 cycle,Ta=25℃ Junction Temperature T j ℃ -55~+125 Storage Temperature T stg ℃ -55 ~ +150 1200 1800 R1200 R1500 R1800 840 V RMS V 1050 1260 Maximum RMS Voltage
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length Ta (℃) 100 0.1 0.3 0.4 0.5 0.6 0.2 FIG.3: TYPICAL FORWARD CHARACTERISTICS FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 IFSM(A) Number of Cycles FIG.2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 0.002 0.02 0.2 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE IF(A) VF(V)
H igh Diode Semiconductor DO-4 1 1.0(25.4) MIN .205(5.21) .166(4.22) .034(0.86) .028(0.71) DIA .107(2.72) .080(2.03) 1.0(25.4) MIN Unit: in inches (millimeters) DIA
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers