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VOLTAGE REGULATOR (with Wide Input Voltage Range) with RESET NO.EA-081-111027 OUTLINE The R1150H series are CMOS-based voltage regulator (VR) ICs equipped with a voltage detector (V DET). VR function of the R1150Hxxxx has featur es of low dropout voltage, high ou tput voltage accura cy, and ultra-low supply current. Each of the R1150HxxxA series includes also a chip enable circuit. The output of built-in voltage detector is Nch open drain type. The R1150HxxxC/D have a pin for connecting external capacitor to set a certain reset delay time instead of chip enable control pin. The regulator output voltage and the detector threshold voltage are fixed in the IC, Output Voltage Accuracy is ±2.0%, while Detector Threshold Accuracy is ±2.5 %. The R1150HxxxA (with chip enable function) and R1150HxxxC series can supervise input voltage by the built-in detector. R1150HxxxB can supervise SENSE pin voltage by the built-in detector. R1150HxxxD type can supervise VOUT voltage, or Regulator Output Voltage of this IC itself. Since the package for these ICs is the SOT-89-5 package, high density mounting of the ICs on boards is possible.

FEATURES

( For other voltages, please refer to MARK INFORMATIONS.) 2.3V to 15.0V (R1150HxxxA) Released Temperature ; Typ. 120°C

APPLICATIONS

  • Power source and Reset circuit for cameras, videos and mobile telecommunication equipment.
  • Power source and Reset circuit for battery-operated equipment.
  • Power source and Reset circuit for home appliances.

With CE pin, V IN detect With SENSE pin VDD VOUT CE GND Vref Current Limit VDET Vref Thermal Shutdown VDD VOUT SENSE GND Vref VDET Vref Current Limit Thermal Shutdown R1150HxxxC R1150HxxxD With CD pin, VIN detect With CD pin, VOUT detect VDD VOUT CD GND Vref VDET Vref Current Limit Thermal Shutdown VDD VOUT CD GND Vref VDET Vref Current Limit Thermal Shutdown

The output voltage, detector threshold and the usage of pin No.3 (as a kind of types in the R1150H Series ) for the ICs can be selected at the user’s request. Product Name Package Quantity per Reel Pb Free Halogen Free R1150Hxxx∗-T1-FE SOT-89-5 1,000 pcs Yes Yes xxx : Specify a combination of output voltage and detector threshold. ∗ : Designation of the usage of pin No.3 and detector function; (A) with CE pin and V IN detect (B) with SENSE pin ( C ) w i t h CD pin and VIN detect ( D ) w i t h CD pin and VOUT detect PIN CONFIGURATION

  • SOT-89-5 PIN DESCRIPTION Pin No. Symbol Description

1 V OUT Voltage Regulator Output Pin

2 GND Ground Pin

CE Chip Enable Pin (A Ver.) SENSE Sense Pin for Voltage Detector (B Ver.) 3 CD Pin for Capacitor for Setting Output Delay of Voltage Detector (C/D Ver.)

4 V DET Voltage Detector Output Pin

5 V DD Input Pin

VIN Input Voltage 26.0 V VCE Input Voltage (CE Input Pin, A Version) −0.3 to VIN+0.3 V VSENSE Input Voltage (SENSE Input Pin, B Version) −0.3 to VIN+0.3 V VCD Input Voltage (C D Input Pin, C/D Version) −0.3 to VIN+0.3 V VDET Output Voltage (V DET Output Pin) −0.3 to 26.0 V VOUT Output Voltage −0.3 to VIN+0.3 V IOUT1 Output Current (VR) 250 mA IOUT2 Output Current (VD) 10 mA PD Power Dissipation (SOT-89-5)∗ 900 mW Topt Operating Temperature −40 to 85 °C Tstg Storage Temperature −55 to 125 °C ∗) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured.

ELECTRICAL CHARACTERISTICS

  • R1150HxxxA T o p t =25°C Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 24.0 V ISS Supply Current VIN=VCE VOUT ≥ (-VDET): VIN=VOUT+2.0V VOUT < (-VDET): VIN=(-VDET)+2.0V 7 14 μA Istandby Standby Current V DD=24V, VCE=0V Refer to Supply Current Table TTSD Thermal Shutdown Temperature Junction Temperature 150 °C TTSR Thermal Shutdown Released Temperature Junction Temperature 120 °C V R Topt=25°C Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage V IN=VOUT+2.0V, IOUT=20mA ×0.98 ×1.02 V IOUT1 Output Current V IN=VOUT+2.0V Refer to Output Current Table ΔVOUT/ΔIOUT Load Regulation VIN=VOUT+2.0V 1mA ≤ IOUT ≤ 40mA Refer to Load Regulation Table ΔVOUT/ΔVIN Line Regulation VIN=VOUT+2.0V, IOUT=20 mA VOUT+1V ≤ VIN ≤ 24V 0.05 0.15 %/V VDIF Dropout Voltage I OUT=20mA Refer to Dropout Voltage Table ΔVOUT/ΔTopt Output Voltage Temperature Coefficient V IN=VOUT+2.0V, IOUT=20mA −40°C ≤ Topt ≤ 85°C ±100 ppm/°C ISC Short Current Limit V OUT=0V 45 mA VCEH CE "H" Input Voltage 1.5 V IN V VCEL CE "L" Input Voltage 0 0.25 V V D Topt=25°C Symbol Item Conditions Min. Typ. Max. Unit -VDET Detector Threshold ×0.975 ×1.025 V VHYS Detector Threshold Hysteresis -V DET ×0.03 -VDET ×0.05 -VDET ×0.07 V IOUT2 Output Current (Driver Output Pin) Refer to Test Conditions for Output Current Table 0.17 mA VDDL Minimum Operating Voltage *Note 1 0.9 1.2 V Δ-VDET/ΔTopt Detector Threshold Temperature Coefficient −40°C ≤ Topt ≤ 85°C ±100 ppm/°C tPLH Output Delay Time *Note 2 0.5 1.0 ms Note 1) This item means V DD Voltage when Output Voltage is equal or less than 0.1V. (Pull-up Resistor=470kW, Pull up Voltage=5V) Note 2) V DET pin is pulled up to VDD via 470kW. tPLH means time interval from rising edge of VDD from (-VDET)−2.0V to (-VDET)+2.0V to the point of Output Voltage being 80% of pull-up voltage.
  • Standby Current (Topt=25°C) Supply Current (µA) Detector Threshold Voltage -VDET (V) Typ. Max. VR part
  • Output Current (Topt=25°C) Output Current (mA) Output Voltage VOUT (V) Min. Typ. 2.1V ≤ VOUT ≤ 2.9V 90 140 3.0V ≤ VOUT ≤ 4.0V 120 170 4.1V ≤ VOUT ≤ 14.0V 150 200
  • Load Regulation (Topt=25°C) Load Regulation (mV) Output Voltage VOUT (V) Typ. Max. 2.1V ≤ VOUT ≤ 3.0V 15 35 3.1V ≤ VOUT ≤ 5.0V 25 45 5.1V ≤ VOUT ≤ 10.0V 40 65 10.1V ≤ VOUT ≤ 14.0V 50 80
  • Dropout Voltage (Topt=25°C) Dropout Voltage (V) Output Voltage VOUT (V) Typ. Max. 2.1V ≤ VOUT ≤ 2.4V 0.40 0.60 2.5V ≤ VOUT ≤ 3.0V 0.30 0.40 3.1V ≤ VOUT ≤ 7.0V 0.25 0.35 7.1V ≤ VOUT ≤ 10.0V 0.27 0.45 10.1V ≤ VOUT ≤ 14.0V 0.30 0.50 VD part
  • Test Conditions for Output Current Detector Threshold Voltage -VDET (V) Conditions 2.3V ≤ (-VDET) ≤ 15.0V VIN=2V, VDS=0.05V RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
  • R1150HxxxB T o p t =25°C Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 24.0 V ISS Supply Current VOUT≥ (-VDET): VIN=SENSE=VOUT+2.0V VOUT < (-VDET): VIN=SENSE=(-VDET)+2.0V 7 14 µA TTSD Thermal Shutdown Temperature Junction Temperature 150 °C TTSR Thermal Shutdown Temperature Junction Temperature 120 °C V R Topt=25°C Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage VIN=VOUT+2.0V IOUT=20mA ×0.98 ×1.02 V IOUT1 Output Current V IN=VOUT+2.0V Refer to Output Current Table ΔVOUT/ΔIOUT Load Regulation VIN=VOUT+2.0V 1mA ≤ IOUT ≤ 40mA Refer to Load Regulation Table ΔVOUT/ΔVIN Line Regulation IOUT=20mA VOUT+1V ≤ VIN ≤ 24V 0.05 0.15 %/V VDIF Dropout Voltage I OUT=20mA Refer to Dropout Voltage Table ΔVOUT/ΔTopt Output Voltage Temperature Coefficient V IN=VOUT+2.0V IOUT=20mA −40°C ≤ Topt ≤ 85°C ±100 ppm/°C ISC Short Current Limit V OUT=0V 45 mA V D Topt=25°C Symbol Item Conditions Min. Typ. Max. Unit -VDET Detector Threshold ×0.975 ×1.025 V VHYS Detector Threshold Hysteresis -V DET ×0.03 -VDET ×0.05 -VDET ×0.07 V IOUT2 Output Current (Driver Output Pin) Refer to Test Conditions for Output Current Table 0.17 mA VDDL Minimum Operating Voltage *Note 1 0.9 1.2 V Δ-VDET/ΔTopt Detector Threshold Temperature Coefficient −40°C ≤ Topt ≤ 85°C ±100 ppm/°C tPLH Output Delay Time *Note 2 1.0 1.5 ms Note 1) This item means V DD Voltage when Output Voltage is equal or less than 0.1V. (Pull-up Resistor=470kW, Pull up Voltage=5V) Note 2) V DET pin is pulled up to VDD via 470kW. tPLH means time interval from rising edge of VDD from (-VDET)−2.0V to (-VDET)+2.0V to the point of Output Voltage being 80% of pull-up voltage.
  • Output Current (Topt=25°C) Output Current (mA) Output Voltage VOUT (V) Min. Typ. 2.1V ≤ VOUT ≤ 2.9V 90 140 3.0V ≤ VOUT ≤ 4.0V 120 170 4.1V ≤ VOUT ≤ 14.0V 150 200 VR part
  • Load Regulation (Topt=25°C) Load Regulation (mV) Output Voltage VOUT (V) Typ. Max. 2.1V ≤ VOUT ≤ 3.0V 15 35 3.1V ≤ VOUT ≤ 5.0V 25 45 5.1V ≤ VOUT ≤ 10.0V 40 65 10.1V ≤ VOUT ≤ 14.0V 50 80
  • Dropout Voltage (Topt=25°C) Dropout Voltage (V) Output Voltage VOUT (V) Typ. Max. 2.1V ≤ VOUT ≤ 2.4V 0.40 0.60 2.5V ≤ VOUT ≤ 3.0V 0.30 0.40 3.1V ≤ VOUT ≤ 7.0V 0.25 0.35 7.1V ≤ VOUT ≤ 10.0V 0.27 0.45 10.1V ≤ VOUT ≤ 14.0V 0.30 0.50 VD part
  • Test Conditions for Output Current Detector Threshold Voltage -VDET (V) Conditions 2.1V ≤ (-VDET) ≤ 15.0V VIN=2V, VDS=0.05V (-VDET)=2.0 V IN=1.9V, VDS=0.05V RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
  • R1150HxxxC T o p t =25°C Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 24.0 V ISS Supply Current VOUT ≥ (-VDET):VIN=VOUT+2.0V VOUT < (-VDET):VIN=(-VDET)+2.0V 7 14 µA TTSD Thermal Shutdown Temperature Junction Temperature 150 °C TTSR Thermal Shutdown Released Temperature Junction Temperature 120 °C V R Topt=25°C Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage VIN=VOUT+2.0V IOUT=20mA ×0.98 ×1.02 V IOUT1 Output Current V IN=VOUT+2.0V Refer to Output Current Table ΔVOUT/ΔIOUT Load Regulation VIN=VOUT+2.0V 1mA ≤ IOUT ≤ 40mA Refer to Load Regulation Table ΔVOUT/ΔVIN Line Regulation IOUT=20mA VOUT+1V ≤ VIN ≤ 24V 0.05 0.15 %/V VDIF Dropout Voltage I OUT=20mA Refer to Dropout Voltage Table ΔVOUT/ΔTopt Output Voltage Temperature Coefficient VIN=VOUT+2.0V IOUT=20mA −40°C ≤ Topt ≤ 85°C ±100 ppm/°C ISC Short Current Limit V OUT=0V 45 mA V D Topt=25°C Symbol Item Conditions Min. Typ. Max. Unit -VDET Detector Threshold ×0.975 ×1.025 V VHYS Detector Threshold Hysteresis -VDET ×0.03 -VDET ×0.05 -VDET ×0.07 V IOUT2 Output Current (Driver Output Pin) Refer to Test Conditions for Output Current Table 0.17 mA VDDL Minimum Operating Voltage *Note 1 0.9 1.2 V Δ-VDET/ΔTopt Detector Threshold Temperature Coefficient −40°C ≤ Topt ≤ 85°C ±100 ppm/°C tPLH Output Delay Time C D=4.7nF, *Note 2 20 30 50 ms Note 1) This item means V DD Voltage when Output Voltage is equal or less than 0.1V. (Pull-up Resistor=470kW, Pull up Voltage=5V) Note 2) V DET pin is pulled up to VDD via 470kW. tPLH means time interval from rising edge of VDD from (-VDET)−2.0V to (-VDET)+2.0V to the point of Output Voltage being 80% of pull-up voltage.
  • Output Current (Topt=25°C) Output Current (mA) Output Voltage VOUT (V) Min. Typ. 2.1V ≤ VOUT ≤ 2.9V 90 140 3.0V ≤ VOUT ≤ 4.0V 120 170 4.1V ≤ VOUT ≤ 14.0V 150 200
  • Load Regulation (Topt=25°C) Load Regulation (mV) Output Voltage VOUT (V) Typ. Max. 2.1V ≤ VOUT ≤ 3.0V 15 35 3.1V ≤ VOUT ≤ 5.0V 25 45 5.1V ≤ VOUT ≤ 10.0V 40 65 10.1V ≤ VOUT ≤ 14.0V 50 80
  • Dropout Voltage (Topt=25°C) Dropout Voltage (V) Output Voltage VOUT (V) Typ. Max. 2.1V ≤ VOUT ≤ 2.4V 0.40 0.60 2.5V ≤ VOUT ≤ 3.0V 0.30 0.40 3.1V ≤ VOUT ≤ 7.0V 0.25 0.35 7.1V ≤ VOUT ≤ 10.0V 0.27 0.45 10.1V ≤ VOUT ≤ 14.0V 0.30 0.50
  • Test Conditions for Output Current Detector Threshold Voltage -VDET (V) Conditions 2.1V ≤ (-VDET) ≤ 15.0V VIN=2V, VDS=0.05V (-VDET)=2.0 V IN=1.9V, VDS=0.05V RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
  • R1150HxxxD T o p t =25°C Symbol Item Conditions Min. Typ. Max. Unit VIN Input Voltage 24.0 V ISS Supply Current V IN=VOUT+2.0V 7 14 µA TSD Thermal Shutdown Temperature 150 °C TSR Thermal Shutdown Released Temperature Junction Temperature 120 °C V R Topt=25°C Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage VIN=VOUT+2.0V IOUT=20mA ×0.98 ×1.02 V IOUT Output Current V IN=VOUT+2.0V Refer to Output Current Table ΔVOUT/ΔIOUT Load Regulation VIN=VOUT+2.0V 1mA ≤ IOUT ≤ 40mA Refer to Load Regulation Table ΔVOUT/ΔVIN Line Regulation IOUT=20mA VOUT+1V ≤ VIN ≤ 24V 0.05 0.15 %/V VDIF Dropout Voltage I OUT=20mA Refer to Dropout Voltage Table ΔVOUT/ΔTopt Output Voltage Temperature Coefficient V IN=VOUT+2.0V IOUT=20mA −40°C ≤ Topt ≤ 85°C ±100 ppm/°C ISC Short Current Limit V OUT=0V 45 mA V D Topt=25°C Symbol Item Conditions Min. Typ. Max. Unit -VDET Detector Threshold ×0.975 ×1.025 V VHYS Detector Threshold Hysteresis -V DET ×0.03 -VDET ×0.05 -VDET ×0.07 V IOUT2 Output Current (Driver Output Pin) Refer to Test Conditions for Output Current Table 0.17 mA VDDL Minimum Operating Voltage *Note 1 0.9 1.2 V Δ-VDET/ΔTopt Detector Threshold Temperature Coefficient −40°C ≤ Topt ≤ 85°C ±100 ppm/°C tPLH Output Delay Time C D=4.7nF, *Note 2 20 30 50 ms Release Margin VOUT−0.2−(-VDET)−VHYS 50 mV Note 1) This item means V DD Voltage when Output Voltage is equal or less than 0.1V. (Pull-up Resistor=470kW, Pull up Voltage=5V) Note 2) V DET pin is pulled up to VDD via 470kW. tPLH means time interval from rising edge of VDD from (-VDET)−2.0V to (-VDET)+2.0V to the point of Output Voltage being 80% of pull-up voltage.
  • Output Current (Topt=25°C) Output Current (mA) Output Voltage VOUT (V) Min. Typ. 2.1V ≤ VOUT ≤ 2.9V 90 140 3.0V ≤ VOUT ≤ 4.0V 120 170 4.1V ≤ VOUT ≤ 14.0V 150 200
  • Load Regulation (Topt=25°C) Load Regulation (mV) Output Voltage VOUT (V) Typ. Max. 2.1V ≤ VOUT ≤ 3.0V 15 35 3.1V ≤ VOUT ≤ 5.0V 25 45 5.1V ≤ VOUT ≤ 10.0V 40 65 10.1V ≤ VOUT ≤ 14.0V 50 80
  • Dropout Voltage (Topt=25°C) Dropout Voltage (V) Output Voltage VOUT (V) Typ. Max. 2.1V ≤ VOUT ≤ 2.4V 0.40 0.60 2.5V ≤ VOUT ≤ 3.0V 0.30 0.40 3.1V ≤ VOUT ≤ 7.0V 0.25 0.35 7.1V ≤ VOUT ≤ 10.0V 0.27 0.45 10.1V ≤ VOUT ≤ 14.0V 0.30 0.50
  • Test Conditions for Output Current Detector Threshold Voltage -VDET (V) Conditions 2.1V ≤ (-VDET) ≤ 15.0V VIN=2V, VDS=0.05V (-VDET)=2.0 V IN=1.9V, VDS=0.05V RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
  • R1150HxxxA

3 CE VOUTGND

CIN=0.1μF, COUT=1μF CINVIN COUT IOUT 470kΩ VDD 4 VDET CIN=0.1μF, COUT=1μF CINVIN COUT VDD 4 VDET Standard Test Circuit Supply Current Test Circuit CIN=0.1μF, COUT=1μF VIN COUT IOUT VDD 4 VDET P.G. CIN=0.1μF, COUT=1μF CINVIN COUT IOUT VDD 4 VDET I1 I2 Input Transient Response/ Load Transient Response Test Circuit Ripple Rejection Test Circuit CIN=0.1μF CINVIN VDD 4 VDET 470kΩ CIN=0.1μF CIN2V VDD 4 VDET 0.05V Minimum Operating Voltage Test Circuit VD Output Current Test Circuit

  • R1150HxxxB

3 SENSE VOUT

CIN=0.1μF, COUT=1μF CINVIN2 COUT IOUT 470kΩ VDD 4VDET VIN1 GND R1150HxxxB SERIES CIN=0.1μF, COUT=1μF CINVIN2 COUT VIN1 SENSE VOUT VDD VDET Standard Test Circuit Supply Current Test Circuit CIN=0.1μF, COUT=1μF VIN1 COUT IOUT VDD 4 VDET P.G. VIN2 CIN=0.1μF, COUT=1μF COUT IOUT VDD 4 VDET I1 I2 CINVIN2 VIN1 Input Transient Response/ Load Transient Response Test Circuit Ripple Rejection Test Circuit CIN=0.1μF CINVIN VDD 4 VDET 470kΩ CIN=0.1μF CIN2V VDD 4 VDET 0.05V V DET Minimum Operating Voltage Test Circuit VD Output Current Test Circuit

  • R1150HxxxC/D

3 CD VOUT

CIN=0.1μF, COUT=1μF CINCD COUT IOUT 470kΩ VDD 4VDET VIN GND R1150HxxxC/D SERIES CIN=0.1μF, COUT=1μF CIN COUT VIN CD VOUT VDD VDET Standard Test Circuit Supply Current Test Circuit CIN=0.1μF, COUT=1μF VIN COUT IOUT VDD 4 VDET P.G. CD

3 CD VOUTGND

CIN=0.1μF, COUT=1μF COUT IOUT VDD 4 VDET I1 I2 VIN CIN Input Transient Response/ Load Transient Response Test Circuit Ripple Rejection Test Circuit CIN=0.1μF CINVIN VDD 4 VDET 470kΩ 5VCD CIN=0.1μF CIN2V VDD 4 VDET 0.05VCD V DET Minimum Operating Voltage Test Circuit VD Output Current Test Circuit

1) Output Voltage vs. Temperature R1150H (VR=3.0V) R1150H (VR=5.0V) 3.06 3.03 3.00 2.97 2.94 Temperature Topt(°C) Output Voltage VOUT(V) -50 0 50 100 5.10 5.05 5.00 4.95 4.90 -50 0 50 100 Temperature Topt(°C) Output Voltage VOUT(V) R1150H (VR=10.0V) 10.2 10.1 10.0 9.9 9.8 -50 0 50 100 Temperature Topt(°C) Output Voltage VOUT(V) 2) Output Voltage vs. Input Voltage R1150H (VR=3.0V) R1150H (VR=5.0V) 4.0 3.5 3.0 2.5 2.0 0 5 10 15 20 25 Topt=25°C IOUT=1mA IOUT=20mA IOUT=40mA Input Voltage VIN(V) Output Voltage VOUT(V) 6.0 5.5 5.0 4.5 4.0 0 5 10 15 20 25 Topt=25°C IOUT=1mA IOUT=20mA IOUT=40mA Input Voltage VIN(V) Output Voltage VOUT(V)

R1150H (VR=10.0V) 11.0 10.5 10.0 9.5 9.0 0 5 10 15 20 25 Topt=25°C IOUT=1mA IOUT=20mA IOUT=40mA Input Voltage VIN(V) Output Voltage VOUT(V) 3) Output Voltage vs. Output Current R1150H (VR=3.0V) R1150H (VR=5.0V) 3.5 2.5 1.5 3.0 2.0 1.0 0.5 0.0 0 100 200 300 Topt=25°C VIN=4V VIN=5V Output Current IOUT(mA) Output Voltage VOUT(V) 6.0 5.0 3.0 4.0 2.0 1.0 0.0 0 100 200 300 Topt=25°COutput Current IOUT(mA) Output Voltage VOUT(V) VIN=6V VIN=7V R1150H (VR=10.0V) 0 100 200 300 Topt=25°C VIN=11V VIN=12V Output Current IOUT(mA) Output Voltage VOUT(V)

4) Dropout Voltage vs. Output Current R1150H (VR=3.0V) R1150H (VR=5.0V) 3.0 2.5 1.5 2.0 1.0 0.5 0.0 0 30 60 120 90 85°C 25°C -40°C Output Current IOUT(mA) Dropout Voltage VDIF(V) 3.0 2.5 1.5 2.0 1.0 0.5 0.0 0 30 60 150 12090 85°C 25°C -40°C Output Current IOUT(mA) Dropout Voltage VDIF(V) R1150H (VR=10.0V) 3.0 2.5 1.5 2.0 1.0 0.5 0.0 0 30 60 150 12090 85°C 25°C -40°C Output Current IOUT(mA) Dropout Voltage VDIF(V) 5) Supply Current vs. Input Voltage R1150H (VR=3.0V) R1150H (VR=5.0V) 01 0 2 051 5 2 5 Topt=25°C Input Voltage VIN(V) Supply Current ISS(μA) 01 0 2 051 5 2 5 Topt=25°C Input Voltage VIN(V) Supply Current ISS(μA)

R1150H (VR=10.0V) 01 0 2 051 5 2 5 Topt=25°C Input Voltage VIN(V) Supply Current ISS(μA) 6) Supply Current vs. Temperature R1150H (VR=3.0V, VDET=2.5V) R1150H (VR=5.0V, VDET=4.5V) Temperature Topt(°C) -50 0 50 100 Supply Current ISS(μA) -50 0 50 100 Temperature Topt(°C) Supply Current ISS(μA) R1150H (VR=10.0V, V DET=11.0V) -50 0 50 100 Temperature Topt(°C) Supply Current ISS(μA)

7) Ripple Rejection vs. Frequency R1150H (VR=3.0V) R1150H (VR=5.0V) Frequency f(kHz) 0.01 10.1 10 100 VIN=5.0VDC+0.5Vp-p, IOUT=20mA, COUT=1μF Topt=25°C Ripple Rejection RR(dB) 0.01 1 0.1 10 100 V IN=7.0VDC+0.5Vp-p, IOUT=20mA, COUT=1μF Topt=25°C Frequency f(kHz) Ripple Rejection RR(dB) R1150H (VR=10.0V) 0.01 1 0.1 10 100 VIN=12.0VDC+0.5Vp-p, IOUT=20mA, COUT=1μF Topt=25°C Frequency f(kHz) Ripple Rejection RR(dB)

8) Input Transient Response R1150H (VR=3.0V) IOUT=20mA, COUT=1μF 3.4 3.3 3.2 3.1 3.0 2.9 2.8 -10 Time T(ms) Input Voltage VIN(V) 400 80 160 200 120 Output Voltage VOUT(V) Output Voltage Input Voltage R1150H (VR=5.0V) IOUT=20mA, COUT=1μF 5.4 5.3 5.2 5.1 5.0 4.9 4.8 -10 Time T(ms) Input Voltage VIN(V) 400 80 160 200 120 Output Voltage VOUT(V) Input Voltage Output Voltage R1150H (VR=10.0V) IOUT=20mA, COUT=1μF 11.0 10.6 10.8 10.4 10.2 10.0 9.8 9.6 -10 Time T(ms) Input Voltage VIN(V) 400 80 160 200 120 Output Voltage VOUT(V) Input Voltage Output Voltage

9) Load Transient Response R1150H (VR=3.0V) Topt=25°C VIN=5.0V, COUT=1μF 4.0 3.5 3.0 2.5 Time T (ms) Output Current IOUT (mA) 501 0 2 0 2 5 3 0 15 Output Voltage VOUT (V) Output Current Output Voltage 20mA 1mA R1150H (VR=5.0V) Topt=25°C VIN=7.0V, COUT=1μF 5.4 5.0 4.6 Time T (ms) Output Current IOUT (mA) 50 1 0 2 02 53 0 15 Output Voltage VOUT (V) Output Current Output Voltage 20mA 1mA R1150H (VR=10.0V) Topt=25°C VIN=12.0V, COUT=1μF 10.5 10.0 9.5 Time T (ms) Output Current IOUT (mA) 501 0 2 0 2 5 3 0 15 Output Voltage VOUT (V) Output Current Output Voltage 20mA 1mA

10) Detector Threshold vs. Temperature R1150H (-VDET=4.5V) R1150H (-VDET=11.0V) 4.8 4.7 4.6 4.5 4.4 Temperature Topt(°C) Input Voltage VIN(V) -50 0 50 100 +VDET -VDET 11.8 11.6 11.2 11.4 11.0 10.8 -50 0 50 100 +VDET -VDET Temperature Topt(°C) Input Voltage VIN(V) 11) Detector Threshold vs. Input Voltage R1150H (-VDET=4.5V) R1150H (-VDET=4.5V) Pull up to VIN P u l l u p t o 5 V Input Voltage VIN(V) Output Voltage VDOUT(V) 012345 85°C 25°C -40°C 012345 85°C 25°C -40°C Input Voltage VIN(V) Output Voltage VDOUT(V) R1150H (-V DET=11.0V) R1150H (-VDET=11.0V) Pull up to VIN P u l l u p t o 5 V 02468 1 0 1 2 -40°C 25°C 85°C Input Voltage VIN(V) Output Voltage VDOUT(V) 02468 1 0 1 2 85°C 25°C -40°C Input Voltage VIN(V) Output Voltage VDOUT(V)

12) Nch Driver Output Current vs. VDS R1150H (-VDET=4.5V) R1150H (-VDET=11.0V) VDS(V) Output Current IOUT(mA) 0123456 VIN=4.0V 3.5V 1.5V 2.0V 2.5V 3.0V VDS(V) Output Current IOUT(mA) 0246 1 0 81 2 1 4 VIN=10V 8.0V 9.0V 2.0V 3.0V 5.0V 4.0V 6.0V 7.0V 13) Nch Driver Output Current vs. Input Voltage R1150H (-VDET=4.5V) R1150H (-VDET=11.0V) Input Voltage VIN(V) Output Current IOUT(mA) 012345 85°C 25°C -40°C 0369 1 2 85°C 25°C -40°C Input Voltage VIN(V) Output Current IOUT(mA) 14) Detector Output Delay Time vs. Temperature R1150H (-VDET=4.5V) Temperature Topt(°C) Detector Output Delay Time tpHL(μs) -50 0 50 100

15) Thermal Shutdown Temperature vs. Output Voltage R1150H (VR=5.0V) Junction Temperature Tjct(°C) Output Voltage VOUT(V) 0 60 12040 10020 80 180140 160 VIN=10V, IOUT=1mA 16) Output Delay Time vs. Temperature R1150H (-VDET=4.5V) 1.0 0.9 0.6 0.4 0.1 0.2 0.7 0.8 0.5 0.3 0.0 Temperature Topt(°C) Output Delay Time tpLH(ms) -50 0 50 100 17) CD pin Threshold Voltage vs. Temperature R1150H (VDET=4.0V) R1150H (VDET=9.0V) 1.4 1.1 1.0 1.2 1.3 0.9 Temperature Topt(°C) CD pin Threshold Voltage VTCD(V) -50 0 50 100 H→L L→H 1.4 1.1 1.0 1.2 1.3 0.9 -50 0 50 100 H→L L→H Temperature Topt(°C) CD pin Threshold Voltage VTCD(V)

18) CD pin Sink Current vs. Input Voltage R1150H (VDET=4.0V) R1150HxxxD (VDET=9.0V) 100 02 1 345 Input Voltage VIN(V) CD pin Sink Current ICD(μA) 85°C 25°C -40°C 100 04 26 8 1 0 Input Voltage VIN(V) CD pin Sink Current ICD(μA) 85°C 25°C -40°C R1150H (VDET=15.0V) 100 Input Voltage VIN(V) 08 4 1 21 62 062 1 01 41 8 CD pin Sink Current ICD(μA) 85°C 25°C Topt=-40°C 19) CD pin Sink Current vs. VDS R1150H (VDET=4.0V) R1150H (VDET=9.0V) 1.4 1.2 0.8 1.0 0.6 0.4 0.2 0.0 Source-Drain Voltage VDS(V) CD pin Sink Current ICD(mA) VDD=1.5V VDD=2.0V VDD=2.5V VDD=3.0V VDD=3.5V 6.0 5.0 3.0 4.0 2.0 1.0 0.0 Source-Drain Voltage VDS(V) CD pin Sink Current ICD(mA) VDD=3.0V VDD=4.0V VDD=5.0V VDD=7.0V VDD=6.0V VDD=8.0V

R1150H (VDET=15.0V) 12.0 10.0 6.0 8.0 4.0 2.0 0.0 Source-Drain Voltage VDS(V) CD pin Sink Current ICD(mA) 0 4 8 12 16 2.0V 3.0V 4.0V 6.0V 7.0V 5.0V 8.0V 9.0V 10.0V 12.0V 11.0V 13.0V 14.0V VDD=14.5V 20) Output Delay Time vs. External Capacitance R1150H (VDET=4.0V) 1000 100 0.1 0.01 0.001 External Capacitance CD(nF) Output Delay Time tp(ms) 0.1 1 10 100 tpLH tpHL 21) tPLHdelay vs. Temperature R1150HxxxD (VDET=4.0V) R1150HxxxD (VDET=9.0V) C D=4.7nF -50 0 50 100 Temperature Topt(°C) tpLH (ms) C D=4.7nF Temperature Topt(°C) tpLH (ms) -50 0 50 100

470kΩ VDD 4 VDET R1150HxxxA R1150HxxxB R1150HxxxC TECHNICAL NOTES Phase Compensation Phase Compensation of the R1150H Series has been made internally for stable operation even though the load current would vary. Therefore, without the capacitors, C IN and C OUT, Output Voltage is regulated, but for more stable operation, use 0.1µF or more capacitors as C IN and C OUT. Wiring should be made as short as possible. PCB layout Current flows into wiring for V DD or GND, thus, if the impedance of the wiring is rather high, it may cause of making noise or unstable operation, thus width and pattern should be enough wide to avoid such problems. Connect the capacitor, CIN between VDD pin and GND pin as close as possible. About the output voltage and the detector threshold setting (In case of R1150HxxxD) When the value difference between release voltage of voltage detector and the output voltage of voltage regulator is little, the release function may not operate after detective, due to change the output voltage of voltage detector. Pay attention for setting of the release voltage. CIN=0.1μF, COUT=1μF CINVIN2 COUT IOUT 470kΩ VDD 4VDET VIN1 CIN=0.1μF, COUT=1μF CINCD COUT IOUT 470kΩ VDD 4VDET VIN

Refer to the following formula for setting the voltage of output and detective value. Thermal Shutdown Thermal shutdown function is included in the R1150 HxxxA/B/C/D Series, when the junction temperature is equal or more than +150°C (Typ.), the operation of regulator would stop. After that, when the junction temperature is equal or less than +120°C (Typ.), the oper ation of regulator would restart. Unless the cause of rising temperature would remove, the regulator repeats on and off, and output waveform would be like consecutive pulses. Chip Enable Circuit Do not make voltage level of chip enable pin keep floating level, or in between V IH and VIL. Unless otherwise, Output voltage would be unstable or indefinite, or unexpected current would flow internally. Output Delay Time for Release VDET In the R1150Hxx1C/D can set an output delay time for release voltage detector with connecting a capacitor to CD pin. When an input voltage (in the case of R1150Hxx1C) or an output voltage (in the case of R1150Hxx1D) surpasses the release voltage of its voltage detector (+VDET), the capacitor which is connected to CD pin is started to be charged, as a result, CD pin voltage rises. When the CD pin voltage surpasses CD pin threshold voltage, the output voltage of the voltage detector outputs “H”. Input Voltage or Output Voltage CD Pin Voltage Output Voltage Output Delay Time (tpLH) GND GND CD Pin Threshold Voltage Released Voltage (+VDET) Output delay time for release voltage detector can be calculated with the next formula: tPLH=1.25/200×109×CD (sec) Input Transient Response If the input transient speed is equal or faster than 80mV/μs and the transient level difference is equal or more than 1.5V, the output response may be extremely worse than normal operation. In that case, add a capacitor between V IN and GND, and make the transient speed of VIN slower than 80mV/µs.

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