QM8205V UPI | Alldatasheet
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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TSOP6 Pin Configuration Product Summary Rev A.01 D090711
Dual N-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.014 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID=6A --- 20 25 mΩ VGS=2.5V , ID=5.2A --- 25 32 VGS=1.8V , ID=5A 34 42 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.3 0.5 1 V △VGS(th) VGS(th) Temperature Coefficient --- -1.74 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=16V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=6A --- 29 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.1 2.2 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=6A --- 10.4 14.6 nC Qgs Gate-Source Charge --- 1.3 1.8 Qgd Gate-Drain Charge --- 2.6 3.6 Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3Ω ID=6A --- 3.2 6.4 ns Tr Rise Time --- 9.8 17.6 Td(off) Turn-Off Delay Time --- 31 62 Tf Fall Time --- 3.6 7.2 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 630 882 pF Coss Output Capacitance --- 66 92 Crss Reverse Transfer Capacitance --- 63 89 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 6 A ISM Pulsed Source Current 2,4 --- --- 30 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=6A , dI/dt=100A/µs , TJ=25℃ --- 5.4 --- nS Qrr Reverse Recovery Charge --- 7 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t ≤10s. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Diode Characteristics N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Dual N-Ch Fast Switching MOSFETs N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
Dual N-Ch Fast Switching MOSFETs Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform