QM80DY-3H MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders QM80DY-3H

  • Insulated Type
  • UL Recognized Yellow Card No. E80276 (N) File No. E80271 B2XB1X C2E1 E2 C1 E2 B2B1 E1 108 93 φ6.5 28 28 3–M5 23 7 Tab#110, t=0.5 LABEL B2X C2E1 B1X

Feb.1999 ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. 100 Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions I C=1A, VEB=3V VEB=3V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M5 Mounting screw M6 Typical value Ratings 1400 1400 1400 800 800 –40~+150 –40~+125 3000 1.47~1.96 15~20 1.96~2.94 20~30 470 Unit V V V V A A W A A V N·m kg·cm N·m kg·cm g Symbol I CEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=1400V, VEB=3V VCB=1400V, Emitter open VEB=7V IC=80A, IB=1.6A –IC=80A (diode forward voltage) IC=80A, VCE=5V VCC=800V, IC=80A, IB1=–IB2=1.6A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. Max. 200 3.0 3.5 1.8 3.0 3.0 0.155 0.6 0.075 MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 210 110 010 010 110 210 310 –110 010 110 –110 –210 110 010 –110 VCE=2.0V Tj=25°C 200 160 120 0 01 2345 Tj=25°C IB=2.0A IB=1A IB=0.5A IB=0.1A IB=0.3A 310 210 010 23 4 5 7 110 23 4 5 7 210 VCE=2.8V VCE=5.0V Tj=25°C Tj=125°C 110 010 –110 23 4 5 7 110 23 4 5 7 210 2 Tj=25°C Tj=125°C IB=1.6A VBE(sat) VCE(sat) 753275327532 444 Tj=25°C Tj=125°C IC=30A IC=50A IC=80A IC=100A 753275327532 444 Tj=25°C Tj=125°C VCC=800V IB1=–IB2=1.6A ts ton tf PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 010 010 110 –110 –210 –310 –310 –210 –110 010 310 210 110 010 110 210 310 100 0 0 20 60 100 120 16040 80 140 210 110 34 57 010 23 4 5 7 110 –110 2 010 ts Tj=25°C Tj=125°C IB1=1.6A VCC=800V IC=80A tf 200 0 0 2000 16001200800400 120 160 Tj=125°C IB2=–4A 753275327532 4442 TC=25°C DC 1ms 200µs 500µs 50µs 210 110 010 Tj=25°C Tj=125°C 753275327532 444 53275324 4 NON–REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)

Feb.1999 010 –310 –210 –110 010 110 –110 110 010 210 110 7 5432010 754320 800 100 200 300 500 400 600 700 210 110 010 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C VCC=800V IB1=–IB2=1.6A Qrr trr Irr 753275327532 0.2 0.4 0.6 0.8 1.0 5327532 444 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W) trr (µs)