QM8014D UPI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Applications

High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power Tool Application Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary Rev A.02 D012417 G D S

N-Ch 80V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 80 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.072 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=10A --- 80 100 mΩ VGS=4.5V, ID=8A --- 90 115 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.7 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=64V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=64V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=10A --- 14.7 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 2.8 5.6 Ω Qg Total Gate Charge (10V) VDS=64V , VGS=10V , ID=10A --- 18.6 26 nC Qgs Gate-Source Charge --- 3.9 5.5 Qgd Gate-Drain Charge --- 3.2 4.5 Td(on) Turn-On Delay Time VDD=40V , VGS=10V , RG=3.3Ω, ID=10A --- 5 10 ns Tr Rise Time --- 25 45 Td(off) Turn-Off Delay Time --- 21 42 Tf Fall Time --- 7.6 15.2 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1090 1526 pF Coss Output Capacitance --- 60 84 Crss Reverse Transfer Capacitance --- 41 57 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=50V , L=0.1mH , IAS=12A 9.5 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 11.8 A ISM Pulsed Source Current 2,6 --- --- 25 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ --- 18.6 --- nS Qrr Reverse Recovery Charge --- 17.7 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

N-Ch 80V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

N-Ch 80V Fast Switching MOSFETs 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform