QM800HA-24B MITSUBISHI | Alldatasheet
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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-24B OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION AC motor controllers, UPS, CVCF , DC motor controllers, NC equipment, Welders 145 19 28 3728 8–φ6.574 3973 6565 279 163 51 47 25 B E BX C E 16316 3 34 3 343–M4 2–M8 50MAX. 47MAX. 44.5 B BX E E C LABEL
- Insulated Type
- UL Recognized Yellow Card No. E80276 (N) File No. E80271
Feb.1999 MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions I C=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M8 Mounting screw M6 B(E) terminal screw M4 BX terminal screw M4 Typical value Ratings 1200 1200 1200 800 800 5300 8000 –40~+150 –40~+125 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~1.47 12~18 0.98~1.47 12~18 2100 Unit V V V V A A W A A V N·m kg·cm N·m kg·cm N·m kg·cm N·m kg·cm g ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. 750 Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=1200V, VEB=2V VCB=1200V,Emitter open VEB=7V, Collector open IC=800A, IB=1.06A IC=–800A (diode forward voltage) IC=800A, VCE=4.0V VCC=600V, IC=800A, IB1=1.6A, –IB2=16A Transistor part Diode part Conductive grease applied Typ. Max. 8.0 8.0 600 4.0 4.2 1.8 2.5 5.0 0.023 0.12 0.01
Feb.1999 2.6 3.0 3.4 3.8 VCE=4V Tj=25°C 4.2 4.6 –110 010 110 –210 753275327532 Tj=25°C Tj=125°C 010 –110 110 IC=600A IC=1000A IC=800A 23 4 5 7 23 4 5 7 Tj=25°C Tj=125°C 410 310 210 110 210 310 VCE=4.0V 23 4 5 7 23 4 5 7 Tj=25°C Tj=125°C –110 IB=1.06A VBE(sat) VCE(sat) 110 010 110 210 310 Tj=25°C Tj=125°C 110 210 310 1000 800 600 400 200 0 012345 Tj=25°C IB=250mA IB=1.06A IB=4A IB=0.5A PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) COLLECTOR REVERSE CURRENT –I C (A)
Feb.1999 1600 0 0 400 800 1200 400 800 1200 1600 Tj=125°C IB=–16A MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE REVERSE BIAS SAFE OPERATING AREA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)