QM75E3Y-2H MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION DC chopper, DC motor controllers, Inverters QM75E2Y/E3Y-2H 108 93(7.5) (7.5) 13 10.510.5 Tab#110, t=0.5 6.5 C1A1E1 C1 K1 12 46.5 88 15 LABEL φ6.5 (E2Y) (E3Y) 2323

  • Insulated Type
  • UL Recognized Yellow Card No. E80276 (N) File No. E80271

Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Conditions I C=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 500 750 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS (Diode part (D2), T j=25°C) Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing Conditions DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current Ratings 1000 1100 800 1500 9.45 × 10 Unit V V V A A A ABSOLUTE MAXIMUM RATINGS (Common) Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions Charged part to case, AC for 1 minute Main terminal screw M5 Mounting screw M6 Typical value Ratings –40~150 –40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V N·m kg·cm N·m kg·cm g Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=75A, IB=1.5A –IC=75A (diode forward voltage) IC=75A, VCE=2.8V/5V VCC=600V, IC=75A, IB1=–IB2=1.5A Transistor part Diode part Conductive grease applied Typ. Max. 1.0 1.0 100 2.5 3.5 1.8 2.5 3.0 0.25 1.2 0.13 ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)

Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Diode part (D2), T j=25°C) Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Test conditions V R=VRRM, Tj=150°C IF=75A IF=75A, di/dt=–150A/µs, VR=600V, Tj=150°C Junction to case Conductive grease applied (case to fin) Unit mA V µs µC °C/W °C/W Limits Min. Typ. Max. 1.5 1.0 0.6 0.13 PERFORMANCE CURVES COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A) SATURATION VOLTAGE V CE (sat), VBE (sat) (V) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 410 310 210 110 310 210 110 010 110 010 –110 VCE=2.8V Tj=25°C –110 110 010 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C VBE(sat) VCE(sat) IB=1.5A 100 0 012345 Tj=25°C IB=0.5A IB=0.2A IB=0.1A IB=1.0A IB=1.5A 753275327532 444 Tj=25°C Tj=125°C VCE=2.8V VCE=5.0V

Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIME t on, ts, tf (µs) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%) 310 310 210 110 010 010 110 210 210 110 010 –110 010 110 210 310 –210 –110 010 110 100 0 0 20 60 100 120 16040 80 140 160 0 0 1000 800600400200 100 120 140 IB2=–4A Tj=125°C IB2=–2A 210 110 34 57 010 23 4 5 7 110 –110 2 010 ts Tj=25°C Tj=125°C IB1=1.5A VCC=600V IC=75A tf 753275327532 444 DC tw=50µs 1ms 100µs 200µs 753275327532 444 Tj=25°C Tj=125°C IC=30A IC=75A IC=50A IC=100A 753275327532 444 Tj=25°C Tj=125°C VCC=600V IB1=–IB2=1.5A ts ton tf TC=25°C NON-REPETITIVE COLLECTOR DISSIPATION SECOND BREAK- DOWN AREA

Feb.1999 PERFORMANCE CURVES (Diode part (D1)) MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) Zth (j-c) (°C/W) TIME (s) FORWARD CHARACTERISTICS (TYPICAL) MAXIMUM SURGE CURRENT FORWARD CURRENT I F (A) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD VOLTAGE V F (A) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC FORWARD CURRENT I F (A) TIME (s) Irr (A), Qrr (µc) SURGE FORWARD CURRENT I FSM (A)Zth (j-c) (°C/W) trr (µs) –110 010 110 110 010 –310 –210 –110 010 010 –110 –210 –310 110 010 210 110 010 Tj=25°C Tj=125°C 210 110 7 5432010 754320 800 100 200 300 500 400 600 700 210 110 010 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C VCC=600V IB1=–IB2=1.5A Irr Qrr trr 753275327532 0.4 0.8 1.2 1.6 2.0 327532 444 753275327532 75320.32 444 0.28 0.24 0.20 0.16 0.12 0.08 0.04

Feb.1999 Irr (A), Qrr (µC) SURGE FORWARD CURRENT I FSM (A) REVERSE RECOVERY CHARACTERISTICS (VS. di/dt) (TYPICAL) MAXIMUM SURGE CURRENT REVERSE RECOVERY CHARACTERISTICS (VS. IF) (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) di/dt (A/µs) Irr (A), Qrr (µC) MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM FORWARD CHARACTERISTIC FORWARD CURRENT I F (A) FORWARD VOLTAGE V F (V) PERFORMANCE CURVES (Diode part (D2)) Zth (j–c) (°C/W) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC TIME (s) trr (µs) trr (µs) 210 110 010 010 110 210 310 –110 –110 210 110 010 210 110 010 –110 010 110 210 310 –110 210 110 010 –110 –210 –310 110 010 010 310 210 110 010 210 110 7 5432010 754320 400 800 1200 1600 2000 200 600 1000 1400 1800 Tj=25°C 753275327532 444 Irr trr Tj=25°C Tj=150°C VR=600V di/dt=–150A/µs Qrr 753275327532 0.2 0.4 0.6 0.8 1.0 5327532 444 753275327532 444 Tj=25°C Tj=150°C VR=300V IF=75A Irr Qrr trr