QM75CY-H

QM75CY-H MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION UPS, CVCF QM75CY-H

• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 LABEL Tab#110, t=0.5 80(7) (7) 20 20 27 φ6.5 E1E2C2 10.5 13 10.5 (8) 22.5 6.5 E1E2

Feb.1999 ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions I C=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M5 Mounting screw M6 Typical value Ratings 600 600 600 350 4.5 750 –40~+150 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A V N·m kg·cm N·m kg·cm g Symbol I CEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A –IC=75A (diode forward voltage) IC=50A, VCE=2V/5V VCC=300V, IC=75A, IB1=–IB2=1.5A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. Max. 1.0 1.0 2.0 2.5 1.85 2.5 3.0 0.35 1.3 0.15 MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 210 110 010 310 210 110 010 –110 110 010 –210 –110 –110 –110 110 010 Tj=25°C VCE=2.0V 200 160 120 0 012345 Tj=25°C IB=2.0A IB=1.5A IB=0.5A IB=1.0A 110 010 110 23 4 5 7 210 23 4 5 7 310 Tj=25°C Tj=125°C IB=1A VBE(sat) VCE(sat) 310 210 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C VCE=5.0V VCE=2.0V ts 753275327532 444 ton tf Tj=25°C Tj=125°C IB1=–IB2=1.5A VCC=300V 75327532 44 32 475 Tj=25°C Tj=125°C IC=100A IC=75A IC=50A IC=30A PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 –310 –210 –110 310 210 110 010 010 110 310 210 –110 100 0 0 20 60 100 120 16040 80 140 160 0 0 200 400 600 800 120 140 100 IB2=–2A 100 300 500 700 –5ATC=125°C 110 010 23 4 5 7 010 23 4 5 7 110 ts tf VCC=300V IB1=1.5A IC=75A Tj=25°C Tj=125°C 753275327532 444 TC=25°C 100µs1ms DC 10ms 500µs 753275327532 0.5 0.4 0.3 0.1 7532 110 010 010 444 0.2 210 110 Tj=25°C Tj=125°C 010 NON–REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA tw=50µs SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)

Feb.1999 753275327532 2.0 1.6 1.2 0.8 0.4 7532 110 010 010 –310 –210 –110 444 42 7 534 110 7 532010 754320 100 300 500 700 800 210 4 400 200 600 –110 23 4010 57 23 4 010 110 010 110 210 trr Irr Qrr Tj=25°C Tj=125°C VCC=300V IB1=–IB2=1.5A 110 210 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W) trr (µs)