QM7022AP UPI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
Applications
High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power Tool Application Absolute Maximum Ratings Thermal Data TO220 Pin Configuration Product Summary Rev A.03 D022317 G S D
N-Ch 75V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 75 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.066 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 V GS=10V , ID=30A --- 6 7.5 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 4 V △VGS(th) VGS(th) Temperature Coefficient --- -5.64 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=60V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=30A --- 49 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (10V) VDS=60V , VGS=10V , ID=30A --- 69 --- nC Qgs Gate-Source Charge --- 25 --- Qgd Gate-Drain Charge --- 24.3 --- Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3Ω, ID=1A --- 30.6 --- ns Tr Rise Time --- 35.2 --- Td(off) Turn-Off Delay Time --- 38 --- Tf Fall Time --- 16.4 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 4406 --- pF Coss Output Capacitance --- 475 --- Crss Reverse Transfer Capacitance --- 380 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=30A 58 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 80 A ISM Pulsed Source Current 2,6 --- --- 160 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V WSW Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=75A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics
N-Ch 75V Fast Switching MOSFETs 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized VGS(th)
N-Ch 75V Fast Switching MOSFETs 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform