QM6016S UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System LCD/LED back light Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summary Rev A.03 D091511 D D D D S S S G

N-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.052 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=8A --- 10 12 mΩ VGS=4.5V , ID=6A --- 12 15 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.76 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=8A --- 45 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (4.5V) VDS=48V , VGS=4.5V , ID=8A --- 30 42 nC Qgs Gate-Source Charge --- 10.7 15 Qgd Gate-Drain Charge --- 9.4 13.2 Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3Ω, ID=8A --- 10.6 21.2 ns Tr Rise Time --- 9 16 Td(off) Turn-Off Delay Time --- 65.6 131 Tf Fall Time --- 4.8 9.6 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 3240 4536 pF Coss Output Capacitance --- 210 294 Crss Reverse Transfer Capacitance --- 146 204 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=30A 77 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 8 A ISM Pulsed Source Current 2,6 --- --- 32 A VSD Diode Forward Voltage 2 V GS=0V , IS=A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=8A , dI/dt=100A/µs , TJ=25℃ --- 18 --- nS Qrr Reverse Recovery Charge --- 15.6 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

N-Ch 60V Fast Switching MOSFETs VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=7V VGS=5V VGS=4.5V VGS=3V VGS=10V 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

N-Ch 60V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 1000 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform