QM6015D UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary Rev A.03 D012417 G S D D

P-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.035 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=-18A --- 20 25 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.28 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-10V , ID=-18A --- 23 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 7 14 Ω Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=-12A --- 25 --- nC Qgs Gate-Source Charge --- 6.7 --- Qgd Gate-Drain Charge --- 5.5 --- Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A --- 38 --- ns Tr Rise Time --- 23.6 --- Td(off) Turn-Off Delay Time --- 100 --- Tf Fall Time --- 6.8 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 3635 --- pF Coss Output Capacitance --- 224 --- Crss Reverse Transfer Capacitance --- 141 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 V DD=-25V , L=0.1mH , IAS=-30A 64 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- -35 A ISM Pulsed Source Current 2,6 --- --- -70 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time IF=-12A , dI/dt=100A/µs ,TJ=25℃ --- 18.0 --- nS Qrr Reverse Recovery Charge --- 14.3 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

P-Ch 60V Fast Switching MOSFETs 0 0.25 0.5 0.75 1 -VDS Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-12A 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0 20 40 60 QG , Total Gate Charge (nC) -VGS Gate to Source Voltage (V) VDS=-20V ID=-12A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized -VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ

P-Ch 60V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 -VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 -VDS (V) -ID (A) Tc=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform