QM6013D UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System CCFL Back-light Inverter Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary Rev A.01 D051010 G D S

P-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.023 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=-10A --- 70 85 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.65 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-4A --- 8.7 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 15 30 Ω Qg Total Gate Charge (-4.5V) VDS=-12V , VGS=-4.5V , ID=-6A --- 11.8 --- nC Qgs Gate-Source Charge --- 1.9 --- Qgd Gate-Drain Charge --- 6.5 --- Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A --- 8.8 --- ns Tr Rise Time --- 19.6 --- Td(off) Turn-Off Delay Time --- 47.2 --- Tf Fall Time --- 9.6 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1080 --- pF Coss Output Capacitance --- 73 --- Crss Reverse Transfer Capacitance --- 50 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=-25V , L=0.1mH , IAS=-15A 17 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- -13 A ISM Pulsed Source Current 2,6 --- --- -26 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

P-Ch 60V Fast Switching MOSFETs 0 0.5 1 1.5 2 -VDS , Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-6A 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0 7 14 21 QG , Total Gate Charge (nC) -VGS Gate to Source Voltage (V) VDS=-20V ID=-6A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ

P-Ch 60V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 -VDS , Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 -VDS (V) -ID (A) Tc=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform