QM600HD-M MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Robotics, Forklifts, Welders QM600HD-M

  • Non-Insulated Type φ5.5 25221214 2022 E B E BX 5.5 B BX E E C LABEL

Feb.1999 Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M6 Mounting screw M5 B(E) terminal screw M4 BX terminal screw M4 Typical value Ratings 350 350 400 600 2080 –40~+150 –40~+125 1.96~2.94 20~30 1.47~1.96 15~20 0.98~1.47 10~15 0.98~1.47 10~15 420 ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Unit V V V V A A W A A V N·m kg·cm N·m kg·cm N·m kg·cm N·m kg·cm g MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. 500 Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=350V, VEB=2V VCB=400V, Emitter open VEB=10V IC=600A, IB=1.2A –IC=600A (diode forward voltage) IC=600A, VCE=2V VCC=200V, IC=600A, IB1=2A, –IB2=4A Transistor part Diode part Conductive grease applied Typ. Max. 2.0 2.0 800 2.0 2.5 3.0 3.0 0.06 0.05

Feb.1999 410 310 210 110 210 110 010 110 010 –110 0 012345 1.0A 0.4A 0.2A 0.08A 200 400 600 800 1000 Tj=25°C IB=2.0A VCE=2.0V Tj=25°C 010 –110 –210 23 4 5 7 23 4 5 7 410 310 210 110 210 310 VCE=2.0V Tj=25°C Tj=125°C 23 4 5 7 23 4 5 7 110 010 110 210 310 –110 Tj=25°C Tj=125°C IB=1.2A VCE(sat) VBE(sat) 753275327532 444 Tj=25°C Tj=125°C tf ts ton IB1=2.0A VCC=200V –IB2=4.0A 753275327532 –210 –110 444 Tj=25°C Tj=125°C IC=600A IC=400AIC=200A PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE

Feb.1999 100 0 0 20 60 100 120 16040 80 140 753275327532 TC =25°C 210 310 110 010 410 310 210 110 444 1ms10ms DC tw=100µs 010 110 010 3 34 57 2 34 57 110 tf VCC=200V Tj=25°C Tj=125°C IB1=2A IC=600A ts 2000 1600 1200 0 0 100 200 300 400 500 Tj=125°C –IB2=4A 1800 1400 1000 800 600 200 400 753275327532 0.08 7532 110 010 010 –310 –210 –110 444 0.07 0.06 0.05 0.04 0.03 0.02 0.01 324 NON–REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%) MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE Zth (j–c) (°C/ W)