QM6008U UPI | Alldatasheet
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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO251 Pin Configuration Product Summary Rev A.01 D062811 G D S D
N-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.054 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=10A --- 70 90 mΩ VGS=4.5V , ID=8A --- 80 100 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.96 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=10A --- 7.6 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 2.2 4.5 Ω Qg Total Gate Charge (4.5V) VDS=48V , VGS=4.5V , ID=10A --- 4.9 6.9 nC Qgs Gate-Source Charge --- 1.8 2.52 Qgd Gate-Drain Charge --- 2.2 3.1 Td(on) Turn-On Delay Time VDS=30V , VGS=10V , RG=3.3Ω, ID=10A --- 1.6 3.2 ns Tr Rise Time --- 7.4 13 Td(off) Turn-Off Delay Time --- 17.6 35 Tf Fall Time --- 4 8 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 511 715 pF Coss Output Capacitance --- 38 53 Crss Reverse Transfer Capacitance --- 25 35 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=5A 2.5 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 10 A ISM Pulsed Source Current 2,6 --- --- 20 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ --- 9.7 --- nS Qrr Reverse Recovery Charge --- 6.1 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Ch 60V Fast Switching MOSFETs 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 100 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=10A 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 60V Fast Switching MOSFETs 100 1000 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform