QM6007G UPI | Alldatasheet
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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT223 Pin Configuration Product Summary Rev A.02 D070516 G S D D
P-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.038 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.5 -2.0 -3.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.92 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-2A --- 5.3 --- S Qg Total Gate Charge (-10V) VDS=-48V , VGS=-10V , ID=-2A --- 8.3 11.6 nC Qgs Gate-Source Charge --- 1.8 2.52 Qgd Gate-Drain Charge --- 1.6 2.25 Td(on) Turn-On Delay Time VDS=-30V , VGS=-10V , RG=3.3Ω, ID=-2A --- 4.1 8.2 ns Tr Rise Time --- 21 38 Td(off) Turn-Off Delay Time --- 20.3 40.6 Tf Fall Time --- 21 42 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 428 600 pF Coss Output Capacitance --- 39 55 Crss Reverse Transfer Capacitance --- 26 36.4 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -2.3 A ISM Pulsed Source Current 2,4 --- --- -12 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Ch 60V Fast Switching MOSFETs 120 140 160 180 200 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-2A Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
P-Ch 60V Fast Switching MOSFETs 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 1000 -VDS (V) -ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching time waveform Fig.11 Gate Charge waveform