QM6006D UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System LCD/LED back light Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary Rev A.03 D012017 G S D D

N-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.057 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=20A --- 14 18 mΩ VGS=4.5V , ID=10A --- 16 20 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.68 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=15A --- 45 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω Qg Total Gate Charge (4.5V) VDS=48V , VGS=4.5V , ID=15A --- 19.3 27 nC Qgs Gate-Source Charge --- 7.1 10 Qgd Gate-Drain Charge --- 7.6 10.6 Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3Ω, ID=15A --- 7.2 14.4 ns Tr Rise Time --- 50 90 Td(off) Turn-Off Delay Time --- 36.4 73 Tf Fall Time --- 7.6 15.2 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 2423 3392 pF Coss Output Capacitance --- 145 203 Crss Reverse Transfer Capacitance --- 97 136 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=15A 19 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 35 A ISM Pulsed Source Current 2,6 --- --- 80 A VSD Diode Forward Voltage 2 V GS=0V , IS=A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=15A , dI/dt=100A/µs , TJ=25℃ --- 16.3 --- nS Qrr Reverse Recovery Charge --- 11 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

N-Ch 60V Fast Switching MOSFETs 4 6 8 10 VGS (V) RDSON (mΩ) ID=12A 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ

N-Ch 60V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform