QM50TF-HB MITSUBISHI | Alldatasheet

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Feb.1999 BuP EuP BvP EvP BwPEwP BuN EuN BvN EvN BwN EwNP N UVW P N 102±0.5 61 461 46 1 7 4–φ5.5 7–M4 74±0.258.5 17 30 24.5 27 30 43 16.5 91±0.5 22 20 20 22 80±0.25 11 30+1.5 –0.5 29.5 LABEL Tab#110, t=0.5 8.1 P N BuP EuP BuN EuN U BvP EvP BvN EvN V BwP EwP BwN EwN W P N OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders QM50TF-HB

  • Insulated Type
  • UL Recognized Yellow Card No. E80276 (N) File No. E80271 MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Note: All Transistor Units are 3-Stage Darlingtons.

Feb.1999 Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Ratings 600 600 600 310 500 –40~+150 –40~+125 2500 0.98~1.47 10~15 1.47~1.96 15~20 660 Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M4 Mounting screw M5 Typical value ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Unit V V V V A A W A A V N·m kg·cm N·m kg·cm g MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. 750 Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=67mA –IC=50A (diode forward voltage) IC=50A, VCE=2.5V VCC=300V, IC=50A, IB1=100mA, IB2=–1.0A Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) Typ. Max. 1.0 1.0 2.5 3.0 1.8 2.0 8.0 3.0 0.4 1.3 0.2

Feb.1999 010 –110 –310 –210 010 –110 –210 VCE=2.5V Tj=25°C 410 310 210 010 23 4 5 7 110 23 4 5 7 210 VCE=2.5V Tj=25°C Tj=125°C VCE=5.0V 110 010 –110 010 23 4 5 7 110 23 4 5 7 210 VCE(sat) VBE(sat) Tj=25°C Tj=125°C IB=67mA 100 0 01 2345 Tj=25°C IB=150mA IB=100mA IB=50mA IB=10mA IB=20mA 753275327532 444 IC=10A Tj=25°C Tj=125°C IC=50A IC=25A 110 010 –110 010 23 4 5 7 110 23 4 5 7 210 tf ton Tj=25°C Tj=125°C IB2=–1.0A VCC=300V IB1=100mA ts PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE

Feb.1999 –310 –210 –110 010 110 010 210 110 010 010 110 210 310 –110 110 010 –110 –110 23 4 5 7 010 23 4 5 7 110 Tj=25°C Tj=125°C VCC=300V IC=50A IB1=100mA tf ts 160 0 0 100 800 120 300 400 500 140 100 Tj=125°C IB2=–1.5A IB2=–3.5A 200 600 700 100 0 0 16020 40 60 80 100 120 140 210 110 010 Tj=25°C Tj=125°C 753275327532 0.5 0.4 0.3 0.1 444 23 4 57 0.2 32 457 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 753275327532 444 TC=25°C 1ms DC 10ms 100µs500µs NON–REPETITIVE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)

Feb.1999 010 110 010 –310 –210 –110 210 110 010 010 110 210 310 210 110 010 –110 –110 210 110 7 5432010 754320 100 200 300 400 500 753275 7532 2.0 1.6 1.2 0.8 0.4 444 234 57 754 753275327532 444 Irr trr Qrr IB2=–1.0A Tj=25°C Tj=125°C VCC=300V IB1=100mA Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W) trr (µs)