QM500

QM500HA-H MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Feb.1999 MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION AC motor controllers, UPS, CVCF , DC motor controllers, NC equipment, Welders QM500HA-H

• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 10 18.5 25 27 26.5 φ6.5 10 10 37.5 28 25 13.5 107 E C BXBE 24.5 7 13 4.5 32.2 B C BX E E LABEL

Feb.1999 Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M6 Mounting screw M6 B(E) terminal screw M4 BX terminal screw M4 Typical value Ratings 600 600 600 500 500 1780 5000 –40~+150 –40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 640 ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Unit V V V V A A W A A V N·m kg·cm N·m kg·cm N·m kg·cm N·m kg·cm g MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. 750 Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=500A, IB=0.67A –IC=500A (diode forward voltage) IC=500A, VCE=2.5V VCC=300V, IC=500A, IB1=1A, –IB2=10A Transistor part Diode part Conductive grease applied Typ. Max. 5.0 5.0 500 2.5 3.5 1.8 3.0 3.5 0.07 0.25 0.04

Feb.1999 110 010 –210 –110 1000 800 600 400 200 0 012345 Tj=25°C IB=200mA IB=2A IB=1A IB=0.5A VCE=2.5V 110 Tj=25°C 010 –110 753275327532 VCE=2.5V Tj=25°C Tj=125°C 210 310 410 510 010 110 210 310 444 753275327532 IB=0.67A Tj=25°C Tj=125°C 444 VBE(sat) VCE(sat) 210 110 010 –110 010 110 210 310 110 010 110 23 4 5 7 210 23 4 5 7 VCC=300V IB1=1A –IB2=10A Tj=25°C Tj=125°C tf ts ton –110 310 753275327532 444 IC=100A Tj=25°C Tj=125°C IC=500A IC=300A PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 310 210 110 010 010 –110 –210 –310 310 210 110 010 010 110 310 210 1600 0 0 200 400 600 800 800 100 300 500 700 1400 1200 1000 600 400 200 Tj=125°C IB2=–3A –10A 100 0 0 20 60 100 120 16040 80 140 110 010 010 23 4 5 7 110 23 4 5 7 210 VCC=300V IC=500A Tj=25°C Tj=125°C IB1=1A ts tf 753275327532 444 D.C. 10ms1ms 100µs 50µs TC =25°C Tj=25°C Tj=125°C 753275327532 0.1 0.08 0.06 0.04 0.02 444 75324010 110 NON–REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200ms SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)

Feb.1999 –110 –210 –310 010 75432010 754320 1000 2000 3000 4000 5000 110 210 753275327532 0.25 0.20 0.15 0.10 0.05 444 75324010 110 SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) CONDUCTION TIME (CYCLES AT 60Hz) TIME (s) MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)