QM4002AD UPI | Alldatasheet
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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary G D Rev A.02 D010617 S
N-Ch 40V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.034 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 V GS=10V , ID=15A --- 22 28 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 3 V △VGS(th) VGS(th) Temperature Coefficient --- -6 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=30A --- 15.6 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 2.6 5.2 Ω Qg Total Gate Charge (10V) VDS=32V , VGS=4.5V , ID=15A --- 12 17 nC Qgs Gate-Source Charge --- 3.2 4.5 Qgd Gate-Drain Charge --- 3.6 5 Td(on) Turn-On Delay Time VDD=20V , VGS=10V , RG=3.3Ω ID=15A --- 5.6 11.2 ns Tr Rise Time --- 32.6 59 Td(off) Turn-Off Delay Time --- 12.4 25 Tf Fall Time --- 7.6 15 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 627 878 pF Coss Output Capacitance --- 61.5 86 Crss Reverse Transfer Capacitance --- 49 69 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=10A 9 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 23 A ISM Pulsed Source Current 2,6 --- --- 46 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=15A , dI/dt=100A/µs , TJ=25℃ --- 3.7 --- nS Qrr Reverse Recovery Charge --- 0.68 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics
N-Ch 40V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 40V Fast Switching MOSFETs 0.01 0.1 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform