QM3807M6

QM3807M6 UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System CCFL Back-light Inverter Absolute Maximum Ratings Thermal Data PRPAK5X6 Pin Configuration Product Summary S1/D2 D1 D1 D1 G2 S2 S2

2 Rev A.02 D071717 QM3807M6 Dual N-Channel Fast Switching MOSFET Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 30 35 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.024 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=30A --- 7.2 9 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -3.5 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=30A --- 42 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.45 2.4 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 10.6 14.8 nC Qgs Gate-Source Charge --- 4.2 5.9 Qgd Gate-Drain Charge --- 4.0 5.6 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω ID=15A --- 6.4 12.8 ns Tr Rise Time --- 70.6 127 Td(off) Turn-Off Delay Time --- 22.4 45 Tf Fall Time --- 8.0 16 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1127 1578 pF Coss Output Capacitance --- 194 272 Crss Reverse Transfer Capacitance --- 77 108 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=20A 45 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 57 A ISM Pulsed Source Current 2,6 --- --- 130 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , TJ=25℃ --- 12 --- nS Qrr Reverse Recovery Charge --- 3.7 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Die1 N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

3 Rev A.02 D071717 QM3807M6 Dual N-Channel Fast Switching MOSFET Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.0213 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=30A --- 3.4 4 mΩ VGS=4.5V , ID=15A --- 5.2 6 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.73 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=30A --- 26.5 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.4 2.3 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 31.6 44 nC Qgs Gate-Source Charge --- 8.6 12 Qgd Gate-Drain Charge --- 11.7 16.4 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω ID=15A --- 9 18 ns Tr Rise Time --- 19 34 Td(off) Turn-Off Delay Time --- 58 116 Tf Fall Time --- 15.2 30 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 3075 4305 pF Coss Output Capacitance --- 400 560 Crss Reverse Transfer Capacitance --- 315 440 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=30A 98 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 83 A ISM Pulsed Source Current 2,6 --- --- 170 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , TJ=25℃ --- 18 --- nS Qrr Reverse Recovery Charge --- 8 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Die2 N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

4 Rev A.02 D071717 QM3807M6 Dual N-Channel Fast Switching MOSFET 100 120 140 0 1 2 3 4 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=7 VGS=5V VGS=4.5V VGS=3V VGS=10V 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 4 6 8 10 VGS (V) RDSON (mΩ) ID=30A 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ N- Channel Typical Characteristics (Die1)

5 Rev A.02 D071717 QM3807M6 Dual N-Channel Fast Switching MOSFET 100 1000 10000 1 4 7 10 13 16 19 22 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 VDS (V) ID (A) 10us 100us 10ms 100ms DC TC=25℃ Single Pulse 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform

6 Rev A.02 D071717 QM3807M6 Dual N-Channel Fast Switching MOSFET 120 150 180 210 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 3.0 3.5 4.0 4.5 5.0 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=12A 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=175℃ TJ=25℃ 0 20 40 60 80 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID=15A 0.5 1.5 -50 25 100 175 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 25 100 175 TJ , Junction Temperature (℃) Normalized On Resistance N-Channel Typical Characteristics (Die2) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

7 Rev A.02 D071717 QM3807M6 Dual N-Channel Fast Switching MOSFET 100 1000 10000 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform

8 Rev A.02 D071717 QM3807M6 Dual N-Channel Fast Switching MOSFET Top Marking