QM3408Y2 UPI | Alldatasheet

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Power Management Load Switch Portable Applications such as Cell Phones, Media Players, Digital Cameras, Hand Held Computers, etc. Absolute Maximum Ratings Thermal Data SOT523 Pin Configuration Product Summary Rev A.01 D011311 G S D

機密 第 2 頁 2016-05-13 - 2 - QM3408Y2 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.016 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4V , ID=300mA --- 0.8 1.1 Ω VGS=2.5V , ID=200mA --- 2 3.0 Ω VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.8 --- 1.5 V △VGS(th) VGS(th) Temperature Coefficient --- -1.68 --- mV/ ℃ IDSS Drain-Source Leakage Current V DS=24V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±10 uA Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 38 --- Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=300mA --- 0.8 1.0 nC Qgs Gate-Source Charge --- 0.23 0.3 Qgd Gate-Drain Charge --- 0.16 0.2 Td(on) Turn-On Delay Time VDD=15V , VGS=4.5V , RG=3.3Ω, ID=0.5A --- 1.4 2.8 ns Tr Rise Time --- 21.5 39 Td(off) Turn-Off Delay Time --- 2.2 4.4 Tf Fall Time --- 37.7 75.4 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 24.3 34 pF Coss Output Capacitance --- 15.3 21.4 Crss Reverse Transfer Capacitance --- 10.2 14.3 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 0.35 A ISM Pulsed Source Current 2,6 --- --- 1.4 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

機密 第 3 頁 2016-05-13 - 3 - QM3408Y2 N-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

機密 第 4 頁 2016-05-13 - 4 - QM3408Y2 N-Ch 30V Fast Switching MOSFETs Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform