QM3401K UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT 23 Pin Configuration Product Summary G S D Rev A.02 D062016

P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.014 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V , ID=-3A --- 55 70 mΩ VGS=-2.5V , ID=-2A --- 70 90 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.5 -0.7 -1.2 V △VGS(th) VGS(th) Temperature Coefficient --- 2.6 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-3A --- 5.6 --- S Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-3A --- 11.9 16.7 nC Qgs Gate-Source Charge --- 1.8 2.5 Qgd Gate-Drain Charge --- 3 4.2 Td(on) Turn-On Delay Time VDD=-15V , VGS=-4.5V , RG=3.3Ω, ID=-3A --- 6.6 13.2 ns Tr Rise Time --- 27.8 50 Td(off) Turn-Off Delay Time --- 46.2 92.4 Tf Fall Time --- 20.6 41.2 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 920 1288 pF Coss Output Capacitance --- 73 102 Crss Reverse Transfer Capacitance --- 71 99 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -3.1 A ISM Pulsed Source Current 2,4 --- --- -15.5 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics

P-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

P-Ch 30V Fast Switching MOSFETs 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform