QM3301S

QM3301S UPI | Alldatasheet

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Power management in half bridge and inverters DC-DC Converter Load Switch Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summary S2 G1 D1 D1 D2 D2

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.034 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=6A --- 15 20 mΩ VGS=4.5V , ID=4A --- 22 30 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.8 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=30V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=15V , ID=6A --- 10 --- S Rg Gate Resistance V DS=24V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=6A --- 7.2 --- nC Qgs Gate-Source Charge --- 1.4 --- Qgd Gate-Drain Charge --- 2.2 --- Td(on) Turn-On Delay Time VDD=12V , VGS=10V , RG=3.3Ω ID=5A --- 4.1 --- ns Tr Rise Time --- 9.8 --- Td(off) Turn-Off Delay Time --- 15.5 --- Tf Fall Time --- 6.0 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 572 --- pF Coss Output Capacitance --- 81 --- Crss Reverse Transfer Capacitance --- 65 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 V DD=25V , L=0.1mH , IAS=10A 16 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 7 A ISM Pulsed Source Current 2,6 --- --- 14 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Diode Characteristics Guaranteed Avalanche Characteristics

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.023 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=-4A --- 35 45 mΩ VGS=-4.5V , ID=-3A --- 65 85 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-10V , ID=-4A --- 6 --- S Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=-4A --- 6.4 --- nC Qgs Gate-Source Charge --- 2.7 --- Qgd Gate-Drain Charge --- 3.1 --- Td(on) Turn-On Delay Time VDD=-12V , VGS=-10V , RG=3.3Ω, ID=-4A --- 9 --- ns Tr Rise Time --- 16.6 --- Td(off) Turn-Off Delay Time --- 21 --- Tf Fall Time --- 21.6 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 632 --- pF Coss Output Capacitance --- 100 --- Crss Reverse Transfer Capacitance --- 74 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 V DD=-25V , L=0.1mH , IAS=-10A 16 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- -4.7 A ISM Pulsed Source Current 2,6 --- --- -9.4 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Guaranteed Avalanche Characteristics Diode Characteristics

N-Ch and P-Ch Fast Switching MOSFETs 0 0.5 1 1.5 VDS Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=6A 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) IS -Source Current(A) TJ=150℃ TJ=25℃ 1.5 4.5 0 2.5 5 7.5 10 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) VDS=20V ID=6A 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized on resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

N-Ch and P-Ch Fast Switching MOSFETs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T 100 1000 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform

N-Ch and P-Ch Fast Switching MOSFETs 0 0.5 1 1.5 2 -VDS , Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 117 144 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-4A 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0 4 8 12 QG , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) VDS=-20V ID=-4A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature (℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

N-Ch and P-Ch Fast Switching MOSFETs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T 100 1000 1 5 9 13 17 21 25 -VDS , Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 -VDS (V) -ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform