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Power Solutions for TODAY and TOMORROW www.upi-semi.com Copyright© 2019, uPI Semiconductor Corp. All rights reserved. IS NOW PART OF Please visit our website for more information: www.upi-semi.com The contents of this document are provided in connection with uPI Semiconductor Corp. (“uPI”) products. uPI makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual property rights, is granted by this publication. Except as provided in uPI’s terms and conditions of sale for such products, uPI assumes no liability whatsoever, and uPI disclaims any express or implied warranty relating to sale and/or use of uPI products, including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. uPI products are not designed, intended, authorized or warranted for use as components in systems intended for medical, life-saving, or life sustaining applications. uPI reserves the right to discontinue or make changes to its products at any time without notice. uPI, uPI design logo, and combinations thereof, are trademarks or registered trademarks of uPI Semiconductor Corp. Other product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Dual N-Channel 30V Fast Switching MOSFET QM3206S-DS-F0000, Aug. 2019 Copyright© uPI Semiconductor Corp. All Rights reserved. www.upi-semi.com General Description The QM3206S is a high performance trench Dual N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QM3206S meets RoHS and Green Product requirements while supporting full function reliability. Features Product Summary Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available VDS RDS(ON) max (VGS=10V) ID (TA=25 °C) 30V 6mΩ 13A
Applications
High Frequency Point-of-Load Synchronous Buck Converter for MB/N B/UMPC/VGA Pin Configuration Networking DC-DC Power System Load Switch
Ordering Information
e Top Marking QM3206S SOP8
QM3206S-DS-F0000, Aug. 2019 Copyright© uPI Semiconductor Corp. All Rights reserved. www.upi-semi.com Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25°C Continuous Drain Current, V GS @ 10V1 13 A ID@TA=70°C Continuous Drain Current, V GS @ 10V1 10 A IDM Pulsed Drain Current 2 65 A EAS Single Pulse Avalanche Energy 3 231 mJ IAS Avalanche Current 46 A PD@TA=25°C Total Power Dissipation 4 1.5 W TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 -- 85 °C/W RθJC Thermal Resistance Junction-Case 1 -- 25 °C/W
QM3206S-DS-F0000, Aug. 2019 Copyright© uPI Semiconductor Corp. All Rights reserved. www.upi-semi.com Dual N-Channel Electrical Characteristics Dual N-Channel Electrical Characteristics: (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 30 -- -- V △BVDSS /△TJ BVDSS Temperature Coefficient Reference to 25°C , I D=1mA -- 0.028 -- V/°C RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=12A -- 4.7 6 mΩ VGS=4.5V , ID=10A -- 7.5 10 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient -- -6.16 -- mV/°C IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25°C -- -- 1 uA VDS=24V , VGS=0V , TJ=55°C -- -- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V -- -- ±100 nA gfs Forward Transconductance V DS=5V , ID=12A -- 47 -- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz -- 1.7 2.9 Ω Qg Total Gate Charge VDS=15V , VGS=4.5V , ID=10A -- 21 29.4 nC Qgs Gate-Source Charge -- 7 9.8 Qgd Gate-Drain Charge -- 6.9 9.7 td(on) Turn-On Delay Time VDS=15V , VGS=10V , RG=3.3 , ID=10A -- 9.6 19.2 ns tr Rise Time -- 8.6 15 td(off) Turn-Off Delay Time -- 59 118 tf Fall Time -- 15.6 31.2 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz -- 2295 3213 pF Coss Output Capacitance -- 267 374 Crss Reverse Transfer Capacitance -- 210 294
QM3206S-DS-F0000, Aug. 2019 Copyright© uPI Semiconductor Corp. All Rights reserved. www.upi-semi.com Guaranteed Avalanche Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=24A 62.8 -- -- mJ Diode Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current -- -- 13 A ISM Pulsed Source Current2,6 -- -- 65 A VSD Diode Forward Voltage2 V GS=0V , IS=1A , TJ=25°C -- -- 1.2 V trr Reverse Recovery Time IF=10A , di/dt=100A/µs , TJ=25°C -- 12 -- nS Qrr Reverse Recovery Charge -- 4.8 -- nC Note: 1. Test data conducted with surface mount attachment to 1 inch 2, FR‐4 board utilizing 2oz copper 2. Pulse Test. Pulse width ≦ 300uS, duty cycle ≦ 2% 3. EAS data is a maximum rating. The test condition is V DD=25V, VGS=10V, L=0.1mH 4. The power dissipation is limited by a 150 °C maximum junction temperature 5. The Min. value is 100% EAS tested guarantee 6. The data is theoretically the same as I D and IDM. In real applications, it will be limited by total power
QM3206S-DS-F0000, Aug. 2019 Copyright© uPI Semiconductor Corp. All Rights reserved. www.upi-semi.com 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) IS -Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) Typical Characteristics Fig.1: Typical Output Characteristics Fig.2: On-Resistance vs. Gate-Source Fig.3: Forward Characteristics of Reve rse Fig.4: Gate-Charge Characteristics Fig.5: Normalized V GS(th) vs. TJ Fig.6: Normalized R DSON vs. TJ
QM3206S-DS-F0000, Aug. 2019 Copyright© uPI Semiconductor Corp. All Rights reserved. www.upi-semi.com 100 1000 10000 1 5 9 1 31 72 12 5 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC Fig.7: Capacitance Fig.8: Safe Operating Area Fig.9: Normalized Maximum Transient Thermal Impedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T
QM3206S-DS-F0000, Aug. 2019 Copyright© uPI Semiconductor Corp. All Rights reserved. www.upi-semi.com Legal Notice The contents of this document are provided in connection with uPI Semiconductor Corp. (“uPI”) products. uPI makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual property rights, is granted by this publication. Except as provided in uPI’s terms and conditions of sale for such products, uPI assumes no liability whatsoever, and uPI disclaims any express or implied warranty relating to sale and/or use of uPI products, including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. uPI products are not designed, intended, authorized or warranted for use as components in systems intended for medical, life-saving, or life sustaining applications. uPI reserves the right to discontinue or make changes to its products at any time without notice. Copyright© 2019, uPI Semiconductor Corp. All rights reserved. uPI, uPI design logo, and combinations thereof, are trademarks or registered trademarks of uPI Semiconductor Corp. Other product names used in this publication are for identification purposes only and may be trademarks of their respective companies. uPI Semiconductor Corp.