DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Power Solutions for TODAY and TOMORROW www.upi-semi.com Copyright© 2019, uPI Semiconductor Corp. All rights reserved. IS NOW PART OF Please visit our website for more information: www.upi-semi.com The contents of this document are provided in connection with uPI Semiconductor Corp. (“uPI”) products. uPI makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual property rights, is granted by this publication. Except as provided in uPI’s terms and conditions of sale for such products, uPI assumes no liability whatsoever, and uPI disclaims any express or implied warranty relating to sale and/or use of uPI products, including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. uPI products are not designed, intended, authorized or warranted for use as components in systems intended for medical, life-saving, or life sustaining applications. uPI reserves the right to discontinue or make changes to its products at any time without notice. uPI, uPI design logo, and combinations thereof, are trademarks or registered trademarks of uPI Semiconductor Corp. Other product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Q QM3 Copy Ge The to p con Th e Fe A S E G Ap H B N L Or O N QM QM310 -Chan 3100M6-DS- yright© uPI Sem eneral De e QM3100M provide low verter appli e QM3100M atures Advanced h Super Low G Excellent Cd Green Devic pplicatio High Freque Buck Conve Networking Load Switch dering I Order umber M3100M6 P 00M6 nel 30 -F0000, Jul. miconductor Cor escriptio M6 is a high Rdson and cations. M6 meets Ro high cell den Gate Charg dV/dt effect ce Available ons ency Point-o erter for MB DC-DC Pow h nformat Package Type PRPAK5X6 0V Fas 2019 p. All Rights res on performanc gate charg oHS and Gr nsity Trench ge t decline e of-Load Syn /NB/UMPC wer System tion st Swit served. ce trench N e character reen Produc h technology nchronous /VGA m Top Mar tching -channel M ristics. It is i ct requirem Pr y Pi rking g MOS OSFET wh ideally suite ments while s roduct S VDS 30V n Config S D FET ich utilizes ed to suppo supporting f Summary RDS(ON) ma (VGS=10V 2.0mΩ guration G S S w extremely h rt synchron full function y ax V) (TC Ω n www.upi-semi.co high cell den ous buck n reliability. ID C=25 °C) 173A om nsity
Q QM3 Copy Ab I P Th QM310 3100M6-DS- yright© uPI Sem bsolute M Symbol VDS VGS ID@TC=25°C D@TC=100°C ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25°C PD@TA=25℃ TSTG TJ ermal D Symbol RθJA RθJC 00M6 -F0000, Jul. miconductor Cor Maximum Drain- Gate-S C Conti n C Conti n ℃ Conti n ℃ Conti n Pulsed Single Avalan C Total P ℃ Total P Storag Opera Data Therm Therm 2019 p. All Rights res m Ratin -Source Volta Source Volta nuous Drain nuous Drain nuous Drain nuous Drain d Drain Curre e Pulse Avala nche Current Power Dissip Power Dissip ge Temperat ating Junction mal Resistance mal Resistanc served. gs Paramete age age Current, VGS Current, VGS Current, VGS Current, VGS ent2 anche Energ t pation4 pation4 ture Range n Temperatu Para e Junction-Am ce Junction-C er S @ 10V1 S @ 10V1 S @ 10V1 S @ 10V1 gy3 ure Range ameter mbient1 Case1 R w Rating ±20 173 109 240 436.2 93.4 55 to 150 55 to 150 Typ. www.upi-semi.co Un m W W Max. U 62 ° C 1.3 ° C om nits V V A A A A A mJ A W W nit C/W C/W
Q QM3 Copy N S QM310 3100M6-DS- yright© uPI Sem -Channe N-C h Symbol BVDSS BVDSS /△TJ RDS(ON) VGS(th) △VGS(th) IDSS IGSS gfs Rg Qg Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss 00M6 -F0000, Jul. miconductor Cor el Electr hannel Ele Drain-Sou BVDSS Te Static Dra On-Resist Gate Thre VGS(th) Tem Drain-Sou Gate-Sou Forward T Gate Res Total Gate Total Gate Gate-Sou Gate-Drai Turn-On D Rise Time Turn-Off D Fall Time Input Cap Output Ca Reverse T 2019 p. All Rights res rical Cha ectrical C Paramete urce Breakdo emperature C ain-Source tance2 eshold Voltag mperature Co urce Leakage rce Leakage Transconduc istance e Charge (10 e Charge (4.5 rce Charge n Charge Delay Time e Delay Time pacitance apacitance Transfer Cap served. aracteris Character er own Voltage Coefficient ge oefficient e Current e Current tance 0V) 5V) pacitance stics ristics: (TJ C VGS=0V, ID Reference VGS=10V, VGS=4.5V, VGS=VDS, VDS=24V, VDS=24V, VDS=30V , VGS=±20V VDS=5V, ID VDS=0V, V VDS=15V, VDS=15V, VDS=15V, ID=15A VDS=15V, J=25 ℃, u Conditions D=250uA e to 25°C, ID= ID=30A ID=15A ID =250uA VGS=0V VGS=0V,TJ=5 , VGS=0V V, VDS=0V D=30A VGS=0V, f=1M VGS=10V, ID= VGS=4.5V, ID VGS=10V, RG VGS=0V, f=1 unless ot s M =1mA 55°C MHz =15A D=15A G=3.3, MHz w therwise Min Typ 30 -- -- 0.03 -- 1.6 -- 2.0 1.2 -- -- -5.3 -- -- -- -- -- -- -- -- -- 100 -- 1.1 -- 86.7 -- 43.6 -- 12.3 -- 17.6 -- 20.3 -- 52.8 -- 86.5 -- 29.2 -- 5300 -- 761 -- 487 www.upi-semi.co noted) Max U n -- V -- V / 2.0 m 2.6 2.5 V -- m V ±100 n -- S -- Ω n n p-- om nit V /°C mΩ V V/°C A A S Ω C ns pF
Q QM3 Copy Gu Dio Note QM310 3100M6-DS- yright© uPI Sem uarantee Symbol EAS ode Cha Symbol IS ISM VSD Trr Qrr Test data con Pulse Test. Pu EAS data is a The power di The Min. valu The data is th 00M6 -F0000, Jul. miconductor Cor ed Avala Single Pu aracteris Continuou Pulsed So Diode For Reverse R Reverse R ducted with su ulse width ≦ 30 maximum ratin ssipation is lim ue is 100% EAS heoretically the 2019 p. All Rights res anche Ch Paramete ulse Avalanch stics Paramete us Source C ource Curren rward Voltag Recovery Tim Recovery Ch rface mount at 00uS, duty cycl ng. The test con ited by a 150°C tested guarante same as ID and served. haracter er he Energy5 er urrent 1,6 nt2,6 me harge ttachment to 1 e ≦ 2% ndition is VDD=2 maximum junc ee d IDM. In real app ristics VDD=25V VG=VD=0 VGS=0V, I IF=30A , d TJ=25℃ inch2, FR‐4 boa 25V, VGS=10V, L= ction temperat plications, it wi Conditions , L=0.1mH , Conditions V, Force Cur IS=1A, TJ=25 di/dt=100A/µ ard utilizing 2oz =0.1mH ure ll be limited by s IAS=67A s rrent copper total power w Min. Ty p 224.5 -- Min. Ty p -- -- -- -- -- -- -- 27 -- 14 www.upi-semi.co p. Max. p. Max. 173 240 1.2 7 -- 4 -- om Unit mJ Unit A A V nS nC
Q QM3 Copy Ty QM310 3100M6-DS- yright© uPI Sem pical Ch Fig. Fig.3: 00M6 -F0000, Jul. miconductor Cor haracter 1: Typical O Forward C Fig.5: No r 2019 p. All Rights res ristics Output Chara Characteristic rmalized VGS served. acteristics cs of Reverse (th) vs. TJ e Fig.2: Fig.4 Fi On-Resista 4: Gate-Ch a ig.6: Norm a w nce vs. Gate arge Charac alized RDSON www.upi-semi.co e-Source cteristics vs. TJ om
Q QM3 Copy QM310 3100M6-DS- yright© uPI Sem Fig.7: 00M6 -F0000, Jul. miconductor Cor : D r a i n - S ou Fig.9: 2019 p. All Rights res urce On-State Capacitan c served. e Resistance Fig.11: T ce e Transient The F ermal Impeda Fig.8: Tran s ance Fig.10: Sa f w sfer Characte fe Operating www.upi-semi.co eristics Area om
Q QM3 Copy QM310 3100M6-DS- yright© uPI Sem The Cor the righ with No inte uPI wha and par inte war life to it Cop uPI trad Oth and 00M6 -F0000, Jul. miconductor Cor e contents o rp. (“uPI”) p accuracy o ht to make c hout notice. license, wh ellectual pro ’s terms an atsoever, an d/or use of u rticular purp ellectual pro rranted for u sustaining ts products pyright© 20 , uPI design demarks of her product d may be tra 2019 p. All Rights res of this docu products. uP or complete changes to hether expre operty rights nd condition nd uPI discl uPI product pose, merch operty right. use as com
applications
019, uPI Sem n logo, and uPI Semico names use ademarks o 9F.,No.5, Taiy TEL served. Lega ment are pr PI makes no ness of the specificatio ess, implied s, is granted s of sale fo laims any e ts, including hantability, o uPI produc mponents in s. uPI reser e without no miconducto combinatio onductor Co ed in this pu of their resp uPI Sem yuan 1st St. Z : 886.3.560. al No rovided in c o representa contents o ons and prod d, arising by d by this pu r such prod express or im g liability or or infringem cts are not d systems int rves the righ otice. or Corp. All r ons thereof, orp. blication ar ective comp miconductor Zhubei City,
1666 FAX : 8
blication. Ex ducts, uPI as mplied warr warranties ent of any p designed, in tended for m ht to discon rights reser are tradem re for identif panies. r Corp. Hsinchu, Tai 886.3.560.18 with uPI Se arranties wi cation and re ptions at an or otherwise xcept as pro ssumes no ranty relatin relating to f patent, copy ntended, au medical, life ntinue or ma ved. marks or reg fication purp iwan, R.O.C. 888 w miconducto ith respect t eserves the ny time e, to any ovided in liability ng to sale fitness for a yright or oth uthorized or e-saving, or ake change gistered poses only www.upi-semi.co or to e a her r s om