QM3001J UPI | Alldatasheet
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High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT89 Pin Configuration Product Summary Rev A.04 D070516 D G D S
P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.023 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=-4A --- 42 52 mΩ VGS=-4.5V , ID=-2A --- 75 90 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-4A --- 11 --- S Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-4A --- 6.4 9.0 nC Qgs Gate-Source Charge --- 2.3 3.2 Qgd Gate-Drain Charge --- 1.9 2.7 Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-4A --- 2.8 5.6 ns Tr Rise Time --- 8.4 15.1 Td(off) Turn-Off Delay Time --- 39 78.0 Tf Fall Time --- 6 12.0 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 583 816 pF Coss Output Capacitance --- 100 140 Crss Reverse Transfer Capacitance --- 80 112 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -4.5 A ISM Pulsed Source Current 2,4 --- --- -23 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-4A , dI/dt=100A/µs , TJ=25℃ --- 7.8 --- nS Qrr Reverse Recovery Charge --- 2.5 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 1OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics
P-Ch 30V Fast Switching MOSFETs 100 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-4A 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature (℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
P-Ch 30V Fast Switching MOSFETs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform