QM30

QM30CY-H MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION UPS, CVCF QM30CY-H

• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 LABEL Tab#110, t=0.5 80(7) (7) 20 20 27 φ6.5 E1E2C2 10.5 13 10.5 (8) 22.5 6.5 E1E2

Feb.1999 ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions I C=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M5 Mounting screw M6 Typical value Ratings 600 600 600 250 1.8 300 –40~+150 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A V N·m kg·cm N·m kg·cm g Symbol I CEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=0.4A –IC=30A (diode forward voltage) IC=30A, VCE=2V/5V VCC=300V, IC=30A, IB1=–IB2=0.6A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. Max. 1.0 1.0 200 2.0 2.5 1.85 1.5 3.0 0.5 2.0 0.15 MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE

Feb.1999 110 010 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C IB=0.4A –110 VBE(sat) VCE(sat) 100 0 01 2345 Tj=25°C IB=0.5A IB=0.1A IB=0.3A IB=1.0A IB=2.0A 110 010 –110 Tj=25°C VCE=2.0V 310 210 110 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C VCE=2.0V VCE=5.0V 75432754320 –210 Tj=25°C Tj=125°C IC=30A 010 –110 IC=10A IC=20A 110 010 010 23 4 5 7 110 23 4 5 7 210 ts ton tf Tj=25°C Tj=125°C –110 IB1=–IB2=0.6A VCC=300V PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE

Feb.1999 100 0 0 20 60 100 120 16040 80 140 753275327532 TC=25°C DC 210 310 110 010 210 110 010 444 1ms 100µs –110 500µs 0 0 700 100 Tj=125°C 200 300 400 500 600 IB2=–1A –3A –5A 110 23 4 5 7 010 ts tf 34 57 110 –110 010 VCC=300V IC=30A IB1=0.6A Tj=25°C Tj=125°C 210 110 Tj=25°C Tj=125°C 010 753275327532 0.5 0.4 0.3 0.2 0.1 7532010 010 –310 –210 –110 4 110 75324 210 NON–REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)

Feb.1999 75432754320 100 200 300 400 500 010 110 210 753275327532 2.0 1.6 1.2 0.8 0.4 7532 110 010 010 –310 –210 –110 444 42 534 753275327532 210 110 010 010 110 210 310 –110 010 110 210 VCC=300V –110 Tj=25°C Tj=125°CIB1=–IB2=0.6A Irr Qrr trr Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W) trr (µs)