QM2N7002E3K1 UPI | Alldatasheet
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Power Management Load Switch Portable Applications such as Cell Phones, Media Players, Digital Cameras, Hand Held Computers, etc. Absolute Maximum Ratings Thermal Data SOT23S Pin Configuration Product Summary G S D
2 Rev A.04 D022317 QM2N7002E3K1 N-Channel 60V Fast Switching MOSFET Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.05 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=0.5A --- 0.8 3 Ω VGS=4.5V , ID=0.2A --- 1 4 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -3.7 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=60V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±10 uA gfs Forward Transconductance V DS=5V , ID=0.3A --- 940 --- mS Qg Total Gate Charge VDS=48V , VGS=10V , ID=0.2A --- 2.0 --- nC Qgs Gate-Source Charge --- 0.4 --- Qgd Gate-Drain Charge --- 0.6 --- Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3Ω, ID=0.5A --- 3 6 ns Tr Rise Time --- 1.8 3.3 Td(off) Turn-Off Delay Time --- 8 16 Tf Fall Time --- 6.8 13.6 Ciss Input Capacitance VDS=25V , VGS=0V , f=1MHz --- 40 56 pF Coss Output Capacitance --- 12 17 Crss Reverse Transfer Capacitance --- 7.6 10.6 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 180 mA ISM Pulsed Source Current 2,4 --- --- 1.2 A VSD Diode Forward Voltage 2 V GS=0V , IS=0.2A , TJ=25℃ --- --- 1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics
3 Rev A.04 D022317 QM2N7002E3K1 N-Channel 60V Fast Switching MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ Fig.4 Capacitance
4 Rev A.04 D022317 QM2N7002E3K1 N-Channel 60V Fast Switching MOSFET Fig.8 Safe Operating Area Fig.10 Normalized Maximum Transient Thermal Impedance Fig.9 Switching Time Waveform Fig.7 Gate-Charge Characteristics
5 Rev A.04 D022317 QM2N7002E3K1 N-Channel 60V Fast Switching MOSFET Top Marking