QM2702D UPI | Alldatasheet
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z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO-252 Pin Configuration Product Summary Rev A.01 D030311 G D S
N-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.024 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID=14A --- 16 20 mΩ VGS=2.5V , ID=7A --- 22 28 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.7 1.2 V △VGS(th) VGS(th) Temperature Coefficient --- -2.7 --- mV/℃ IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=16V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±16V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=14A --- 30 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.9 3.8 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=14A --- 9.8 --- nC Qgs Gate-Source Charge --- 2.1 --- Qgd Gate-Drain Charge --- 3 --- Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3Ω ID=14A --- 3.8 --- ns Tr Rise Time --- 12.2 --- Td(off) Turn-Off Delay Time --- 19.6 --- Tf Fall Time --- 8 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 772 --- pF Coss Output Capacitance --- 83 --- Crss Reverse Transfer Capacitance --- 79 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 28 A ISM Pulsed Source Current 2,4 --- --- 70 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=14A , dI/dt=100A/µs , TJ=25℃ --- 7.3 --- nS Qrr Reverse Recovery Charge --- 2 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics
N-Ch 20V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 20V Fast Switching MOSFETs 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform