QM2605V

QM2605V UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TSOP6 Pin Configuration Product Summary Rev A.03 D052711

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.024 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID=3A --- 40 48 mΩ VGS=2.5V , ID=2A --- 45 55 VGS=1.8V , ID=1.5A 55 65 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.3 0.5 1 V △VGS(th) VGS(th) Temperature Coefficient --- -2.51 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=16V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=3A --- 9 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=3A --- 6.2 8.7 nC Qgs Gate-Source Charge --- 0.36 0.5 Qgd Gate-Drain Charge --- 1.56 2.18 Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3Ω ID=3A --- 1.4 2.8 ns Tr Rise Time --- 40 72.0 Td(off) Turn-Off Delay Time --- 17 34 Tf Fall Time --- 5.6 11.2 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 382 534.8 pF Coss Output Capacitance --- 41 57.4 Crss Reverse Transfer Capacitance --- 33 46.2 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 3.8 A ISM Pulsed Source Current 2,4 --- --- 15.2 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=3A , dI/dt=100A/µs , TJ=25℃ --- 5.7 --- nS Qrr Reverse Recovery Charge --- 1.8 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Diode Characteristics N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

N-Ch and P-Ch Fast Switching MOSFETs VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.016 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 mΩ VGS=-2.5V , ID=-1.5A --- 145 170 VGS=-1.8V , ID=-1A 185 220 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.3 -0.5 -1 V △VGS(th) VGS(th) Temperature Coefficient --- 3.97 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-2A --- 5.9 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 13.1 26.2 Ω Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-2A --- 5.6 7.8 nC Qgs Gate-Source Charge --- 0.72 1.0 Qgd Gate-Drain Charge --- 1.45 2.0 Td(on) Turn-On Delay Time VDD=-15V , VGS=-4.5V , RG=3.3Ω ID=-2A --- 4 8.0 ns Tr Rise Time --- 25.6 46 Td(off) Turn-Off Delay Time --- 26 52 Tf Fall Time --- 12.4 24.8 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 332 465 pF Coss Output Capacitance --- 48 67 Crss Reverse Transfer Capacitance --- 42 59 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -2.5 A ISM Pulsed Source Current 2,4 --- --- -10 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-2A , dI/dt=100A/µs , TJ=25℃ --- 23 --- nS Qrr Reverse Recovery Charge --- 4.7 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics

N-Ch and P-Ch Fast Switching MOSFETs 0 0.5 1 1.5 2 -VDS , Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-1.8V VGS=-2.5V VGS=-5V VGS=-4.5V VGS=-3V 120 160 200 240 280 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-2A 0 0.3 0.6 0.9 1.2 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 1 5 9 13 17 21 -VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform